Abstract: A method of fabricating a feature of an integrated circuit in a layer of material includes providing a layer of photoresist having a first thickness over the layer of material; forming apertures in the layer of photoresist; growing the layer of photoresist to a second thickness greater than the first thickness; and etching the layer of material through the apertures to fabricate a feature.

Abstract: One aspect of the invention relates to a metal fill process and systems therefor involving providing a standard calibration wafer having a plurality of fill features of known dimensions in a metalization tool; depositing a metal material over the standard calibration wafer; monitoring the deposition of metal material using a sensor system, the sensor system operable to measure one or more fill process parameters and to generate fill process data; controlling the deposition of metal material to minimize void formation using a control system wherein the control system receives fill process data from the sensor system and analyzes the fill process data to generate a feed-forward control data operative to control the metalization tool; and depositing metal material over a production wafer in the metalization tool using the fill process data generated by the sensor system and the control system. The invention further relates to tool characterization processes and systems therefor.

Abstract: A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, including steps of growing on the silicon substrate an interfacial layer of a silicon-containing dielectric material; and depositing on the interfacial layer a layer comprising at least one high-K dielectric material, in which the interfacial layer is grown by laser excitation of the silicon substrate in the presence of oxygen, nitrous oxide, nitric oxide, ammonia or a mixture of two or more thereof. In one embodiment, the silicon-containing material is silicon dioxide, silicon nitride, silicon oxynitride or a mixture thereof.

Abstract: For use in a system comprising a plurality of devices that are connected together in a network, there is disclosed a system and method of transferring information from a first device in the network to a second device in the network when the first device is operating in a reduced power mode. The first device comprises a second power supply for supplying power to the first device when a first power supply fails. The first device also comprises a controller for transferring information from the first device to a second device in the network when the first device is receiving power from the second power supply. The second device in the network receives power from its own first power supply. The second device receives information that has been transferred from the first device in the network.

Abstract: A computer system including a first processor, a second processor in communication with the first processor, a memory coupled to the first and second processors (i.e., a shared memory) and including multiple memory locations, and a storage device coupled to the first processor. The first and second processors implement virtual memory using the memory. The first processor maintains a first set of page tables and a second set of page tables in the memory. The first processor uses the first set of page tables to access the memory locations within the memory. The second processor uses the second set of page tables, maintained by the first processor, to access the memory locations within the memory. A virtual memory page replacement method is described for use in the computer system, wherein the virtual memory page replacement method is designed to help maintain paged memory coherence within the multiprocessor computer system.

Abstract: A silicon-on-insulator (SOI) device with a strained silicon film has a substrate, and a buried oxide layer on the substrate. Silicon islands are formed on the buried oxide layer, the silicon islands being separated from each other by gaps. The buried oxide layers has recesses directly under the gaps. A material fills the recesses and the gaps, this material being different from the material forming the buried oxide layer. The material induces a net amount of strain in the silicon islands, thereby modifying the electrical properties of carriers in the silicon film and improving device performance.

Abstract: A method of manufacturing a MOSFET semiconductor device includes forming a gate electrode over a substrate and a gate oxide between the gate electrode and the substrate. Inert dopants are then implanted within the substrate to form amorphized source/drain regions in the substrate extending to a first depth significantly greater than the intended junction depth. The amorphized source/drain regions are implanted with source/drain dopants such that the dopants extend into the substrate to a second depth less than the first depth, above and spaced apart from the end-of-range defect region created at the first depth by the amorphization process. Laser thermal annealing recrystallizes the amorphous regions, activates the source/drain regions and forms source/drain junctions.

Abstract: A virtual channel buffer bypass in a computer system input/output node. A control unit of an input/output node for a computer system includes a buffer circuit configured to receive control commands. The buffer circuit may include a plurality of buffers each corresponding to a respective virtual channel of a plurality of virtual channels for storing selected control commands that belong to the respective virtual channel. The buffer circuit may also be configured to determine whether each of the plurality of buffers is empty prior to storing a particular control command corresponding to a given one of the plurality of buffers. In addition, the buffer circuit may be configured to cause the particular control command to bypass the given one of the plurality of buffers in response to determining that each of the plurality of buffers is empty.

Abstract: A system and method for implementing a multi-level interrupt scheme in a computer system is provided. Bus devices and a bus controller may be coupled to a shared bus in a computer system. The bus may include an interrupt line for each bus device coupled to the bus. A bus device may be configured to convey an interrupt using its designated interrupt line. Each bus device may be configured to convey different types of interrupt signals on its interrupt line depending on an interrupt priority level of a given interrupt. The bus controller may be configured to receive interrupt signals from each bus device coupled to the bus and may arbitrate amongst the interrupt signals based on the interrupt priority level of each interrupt signal. The bus controller may grant the interrupt that corresponds to the highest priority level. If multiple interrupts correspond to the same highest priority level in a group of interrupts, then the bus controller may use any suitable arbitration scheme to grant an interrupt.

Abstract: A method for fabricating a SONOS device having a buried bit-line including the steps of: providing a semiconductor substrate having an ONO structure overlying the semiconductor substrate; forming a nitride barrier layer on the ONO structure to form, a four-layer stack; forming a patterned photoresist layer on the nitride barrier layer; implanting As or P ions through the four-layer stack to form a bit-line buried under the ONO structure; stripping the photoresist layer and cleaning an upper surface of the four-layer stack; and consolidating the four-layer stack by applying an oxidation cycle. The invention further relates to a SONOS-type device including the nitride barrier layer.

Abstract: An integrated multiport switch operating in a packet switched network provides the capability via distributed egress logic to alter VLAN tags on a port by port basis. An internal rules checker (IRC) analyzes the header of a data frame to determine the frame type: untagged, VLAN-tagged, or priority-tagged. The IRC searches the untagged set table for the set of ports that are untagged for a particular VLAN. The IRC passes a forwarding descriptor that includes the frame type and a operational code (opcode) to a Port Vector FIFO logic (PVF). The PVF is responsible for creating a new opcode that instructs a dequeuing logic to add, remove, modify the VLAN tag, or send the frame unmodified. The opcodes generated by the PVF are individualized for each output port.

Abstract: A system that enables a memory controller to control data transfers with memory modules, such as DIMMs (double in-line memory modules), of either a “by 4” (×4) type or a non-by-4 type (non-×4). Both ×4 and non-×4 DIMMs may be used in the system simultaneously, and the memory controller dynamically adjusts its enable and other signals as needed. Data strobe signals are provided to and from DIMMs over a data strobe transfer circuits which in the case of a non-×4 DIMM handles data strobes for an entire byte of data, while in the case of ×4 DIMM the data transfer circuit handles data strobes for one nibble (four bits) of a byte of data. A hybrid data mask/data strobe transfer circuit handles the other nibble of a byte of data in the case of data transfers for ×4 DIMMs, and handles data mask signals for write operations for non-×4 DIMMs.

Abstract: A semiconductor device and method of manufacture. A liner composed of a high-K material having a relative permittivity of greater than 10 is formed adjacent at least the sidewalls of a gate. Sidewall spacers are formed adjacent the gate and spaced apart from the gate by the liner. The liner can be removed using an etch process that has substantially no reaction with a gate dielectric of the gate.

Abstract: A technique in which a first boundary region is added to the ends of phase zero (0) pattern defining polygons and a second boundary region is added to the ends of phase 180 pattern. This technique can improve line end pattern definition and improve the manufacturability and patterning process window. The added boundary region balances the light on both sides of the line ends, resulting in a more predictable final resist pattern.

Abstract: A write buffer includes master trace bits to enable a system debugger to determine the source of accesses to memory in systems with multiple masters. When a write to memory is initiated by one of a plurality of masters, the write buffer receives a grant signal, indicating which master is initiating the write operation, and stores the information as master trace bits. Likewise, when a read from memory is initiated by a master, the write buffer master trace bits reflect the requesting master. Accordingly, each rank in the write buffer may include master trace information. The master trace bits are particularly useful in write buffers which employ either write merging or write collapsing features. The master trace bits are further made available to system debuggers on pins external to the system or via a port accessible to software.

Abstract: A method of testing a port register of an integrated network device includes establishing a programmable value for a register of an integrated network device. The register is programmed with a prescribed value configured to represent the programmable value. A read value is read from the register following the programming with the prescribed value. The programming step is validated by comparing the read value with the programmable value.

Abstract: A network switch, configured for performing layer 2 and layer 3 switching in an Ethernet (IEEE 802.3) network without blocking of incoming data packets, includes a plurality of ports. Each port is configured to compare a corresponding incoming data packet with at least one template. Each template has min terms specifying a corresponding prescribed value that is to be compared with a corresponding selected byte of the incoming data packet by the port. The network switch also includes a manager module configured to supply a next location field to the corresponding port. The corresponding port determines a next corresponding selected byte of the incoming data packet from the next location field for a next comparison with a next corresponding prescribed value in response to a next location field request.

Abstract: A method for determining output characteristics of a workpiece includes generating a tool state trace related to the processing of a workpiece in a tool; comparing the generated tool state trace to a library of reference tool state traces, each reference tool state trace having an output characteristic metric; selecting a reference tool state trace closest to the generated tool state trace; and determining an output characteristic of the workpiece based on the output characteristic metric associated with the selected reference tool state trace. A manufacturing system includes a tool and a tool state monitor. The tool is adapted to process a workpiece.

Abstract: The electromigration characteristics of patterned metal features, such as metal lines, in semiconductor devices is improved by applying a conductive layer to substantially surround and encapsulate the patterned metal features. A portion of the conductive layer may be removed to form conductive sidewall spacers on the side surfaces of the patterned metal features. In an embodiment of the invention, the conductive layer comprises a first layer of titanium and a second layer of titanium-nitride thereon.

Abstract: A method and system for preparing a device for analysis is disclosed. In the present invention, the device to be prepared includes a semiconductor die coupled to a first surface of a package substrate. The first surface of the package substrate includes an interconnect pattern for electrically coupling the semiconductor die to a plurality of solder ball connectors disposed on a second surface of the package substrate. The method and system for preparing the device for backside analysis comprises removing the plurality of solder ball connectors, exposing the interconnect pattern, and then exposing a backside of the semiconductor die. The method further includes preparing the backside of the semiconductor die for diagnostic testing. Electrical contact with the semiconductor die is established via the exposed interconnect pattern.