Abstract: Various thermal interface structures and methods are disclosed. In one aspect, a method of manufacturing is provided. The method includes providing plural carbon nanotubes in a thermal interface structure. The thermal interface structure is soldered to a side of a semiconductor chip. In another aspect, an apparatus is provided. The apparatus includes a thermal interface structure that has plural carbon nanotubes. A semiconductor chip is soldered to the thermal interface structure.

Abstract: A method of managing resources is provided. The method includes identifying a resource associated with a processor responsive to an impending transition, and copying the identified resource from a memory associated with the GPU or to the memory associated with the GPU.

Abstract: In a system having a plurality of processing nodes, a control node divides a task into a plurality of sub-tasks, and assigns the sub-tasks to one or more additional processing nodes which execute the assigned sub-tasks and return the results to the control node, thereby enabling a plurality of processing nodes to efficiently and quickly perform memory initialization and test of all assigned sub-tasks.

Abstract: Various methods and apparatus for establishing thermal pathways for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes providing a first semiconductor chip that has a substrate and a first active circuitry portion extending a first distance into the substrate. A barrier is formed in the first semiconductor chip that surrounds but is laterally separated from the first active circuitry portion and extends into the substrate a second distance greater than the first distance.

Abstract: By removing an outer spacer of a transistor element, used for the formation of highly complex lateral dopant profiles, prior to the formation of metal silicide, employing a wet chemical etch process, it is possible to position a stressed contact liner layer more closely to the channel region, thereby allowing a highly efficient stress transfer mechanism for creating a corresponding strain in the channel region, without affecting circuit elements in the P-type regions.

Abstract: A system and method for efficient garbage collection. A general-purpose central processing unit (CPU) sends a garbage collection request and a first log to a special processing unit (SPU). The first log includes an address and a data size of each allocated data object stored in a heap in memory corresponding to the CPU. The SPU has a single instruction multiple data (SIMD) parallel architecture and may be a graphics processing unit (GPU). The SPU efficiently performs operations of a garbage collection algorithm due to its architecture on a local representation of the data objects stored in the memory. The SPU records a list of changes it performs to remove dead data objects and compact live data objects. This list is subsequently sent to the CPU, which performs the included operations.

Abstract: A graphics processor or a graphics block for use in a processor includes a type buffer used for determining if a currently processed pixel requires further processing. Each pixel has a number of sub-pixels and each sub-pixel line includes at least one counter that is stored in an edge buffer. A limited edge buffer that can store edge buffer values in a limited range can be employed. Each buffer can include information regarding the whole screen or a portion of thereof. The edge buffer also can be an external or internal buffer, and when implemented internally, the graphics processor or graphics block need not employ a bi-directional bus.

Abstract: By forming metallization structures on the basis of an imprint technique, in which via openings and trenches may be commonly formed, a significant reduction of process complexity may be achieved due to the omission of at least one further alignment process as required in conventional process techniques. Furthermore, the flexibility and efficiency of imprint lithography may be increased by providing appropriately designed imprint molds in order to provide via openings and trenches exhibiting an increased fill capability, thereby also improving the performance of the finally obtained metallization structures with respect to reliability, resistance against electromigration and the like.

Abstract: Various semiconductor die conductor structures and methods of fabricating the same are provided. In one aspect, a method of manufacturing is provided that includes forming a conductor structure on a conductor pad of a semiconductor die. The conductor layer has a surface. A polymeric layer is formed on the surface of the conductor layer while a portion of the surface is left exposed. A solder structure is formed on the exposed portion of the surface and a portion of the polymeric layer.

Abstract: By combining an anneal process for adjusting the effective channel length and a substantially diffusion-free anneal process performed after a deep drain and source implantation, the vertical extension of the drain and source region may be increased substantially without affecting the previously adjusted channel length. In this manner, in SOI devices, the drain and source regions may extend down to the buried insulating layer, thereby reducing the parasitic capacitance, while the degree of dopant activation and thus series resistance in the extension regions may be improved. Furthermore, less critical process parameters during the anneal process for adjusting the channel length may provide the potential for reducing the lateral dimensions of the transistor devices.

Abstract: Embodiments include implementing a phase detector for a delay-locked loop (DLL) circuit that is operable to detect substantially 270 degree and substantially 540 degree phase differences between two clock signals.

Abstract: A system and method using messages to access registers and memory in a PCI Express communications link environment. Vendor defined PCI Express messages can be used to read and write to the memory-mapped or register space of a device. Four types of accesses are defined using this messaging approach, namely memory read, memory write, configuration read and configuration write. The type of register access desired is defined by the appropriate value in a vendor-specific type field in the header of the vendor defined message. If a PCI Express compliant device at the other end of the PCI Express link does not support these types of messages, the messages are silently discarded by the receiver and no error is reported.

Abstract: A method for transitioning power states in a device includes designating a first reduced power state as a target power state. A first expected residency for the target power state is determined based on a counting of activity requests associated with the device. The device is transitioned to the target power state responsive to the expected residency satisfying a first predetermined threshold.

Abstract: The present invention provides a method of forming a transistor. The method includes forming a first layer of a first semiconductor material above an insulation layer. The first semiconductor material is selected to provide high mobility to a first carrier type. The method also includes forming a second layer of a second semiconductor material above the first layer of semiconductor material. The second semiconductor material is selected to provide high mobility to a second carrier type opposite the first carrier type. The method further includes forming a first masking layer adjacent the second layer and etching the second layer through the first masking layer to form at least one feature in the second layer. Each feature in the second layer forms an inverted-T shape with a portion of the second layer.

Abstract: In sophisticated semiconductor devices including copper-based metallization systems, a substantially aluminum-free bump structure in device regions and a substantially aluminum-free wire bond structure in test regions may be formed on the basis of a manufacturing process resulting in identical final dielectric layer stacks in these device areas. The number of process steps may be reduced by making a decision as to whether a substrate is to become a product substrate or test substrate for estimating the reliability of actual semiconductor devices. For example, nickel contact elements may be formed above copper-based contact areas wherein the nickel may provide a base for wire bonding or forming a bump material thereon.

Abstract: A method for forming an integrated circuit system is provided including forming a semi-conducting layer over a substrate, forming a spacer stack having a gap filler adjacent to the semi-conducting layer and a inter-layer dielectric over the gap filler, forming a transition layer having a recess over the semi-conducting layer and adjacent to the spacer stack, and forming a metal layer in the recess.

Abstract: A method and apparatus for rendering instance geometry whereby all culling, level of detail (LOD) and scene management is performed directly on a GPU.

Abstract: A method for forming an integrated circuit system includes providing an integrated circuit device; and forming an integrated contact over the integrated circuit device including: providing a via over the integrated circuit device; forming a selective metal in the via; forming at least one nanotube over the selective metal; and forming a cap over the nanotubes.

Abstract: A receiver employs iterative decoding of packet data, where the packet data represents a data frame encoded with at least two logical dimensions. A logical dimension refers to a layer, or sub-layer, of a layered network architecture. Consequently, a first logical dimension of encoding might refer to error detection in a packet frame at the data link layer, while a second logical dimension of coding might refer to error detection/correction encoding at a physical layer. For example, a data frame might be divided into several packets, each with a corresponding cyclic redundancy check (CRC) value as coding in the first logical dimension, which are then transmitted with a convolutional code as coding in the second logical dimension. The receiver performs iterative decoding in the first and second logical dimensions until either i) all errors are identified and corrected or ii) another type of stopping condition is met.

Abstract: A method includes delivering a user-level interrupt message indicative of a user-level interrupt to one or more recipients according to a user-level interrupt delivery configuration selected from a plurality of user-level interrupt delivery configurations. The one or more recipients correspond to one or more application threads executing on one or more processor cores of a plurality of processor cores in a multi-core system. A method includes generating an indicator of a user-level interrupt being undeliverable to one or more intended recipients of a user-level interrupt message according to a failed delivery notification mode configuration. The user-level interrupt may be issued by an application thread executing on a first processor core of a plurality of processor cores in a multi-core system.