Abstract: In a strained SOI semiconductor layer, the stress relaxation which may typically occur during the patterning of trench isolation structures may be reduced by selecting an appropriate reduced target height of the active regions, thereby enabling the formation of transistor elements on the active region of reduced height, which may still include a significant amount of the initial strain component. The active regions of reduced height may be advantageously used for forming fully depleted field effect transistors.

Abstract: Data retention in flash memory devices, such as mirrorbit devices, is improved by reducing the generation and/or diffusion of hydrogen ions during back end processing, such as annealing inlaid Cu. Embodiments include annealing inlaid Cu in an N2 atmosphere containing low H2 or no H2, and at temperatures less than 200° C., e.g., 100° C. to 150° C.

Abstract: During the manufacturing process for forming sophisticated transistor elements, the gate height may be reduced and a recessed drain and source configuration may be obtained in a common etch sequence prior to forming respective metal silicide regions. Since the corresponding sidewall spacer structure may be maintained during the etch sequence, controllability and uniformity of the silicidation process in the gate electrode may be enhanced, thereby obtaining a reduced degree of threshold variability. Furthermore, the recessed drain and source configuration may provide reduced overall series resistance and enhanced stress transfer efficiency.

Abstract: A memory device may include a substrate, a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may also include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer. The memory device may further include an interlayer dielectric formed over the control gate and the substrate, where the interlayer dielectric includes a material that is substantially opaque to ultraviolet radiation.

Abstract: A system and method for efficient bounded hash table sorting during dynamic whole program profiling of software applications. A computing system comprises a dynamic binary instrumentation (DBI) tool coupled to a virtual machine configured to translate and execute binary code of a software application. The binary code is augmented with instrumentation and analysis code during translation and execution. A dynamic binary analysis (DBA) tool identifies hierarchical layers of cycles within the application that describe the dynamic behavior of the application. Corresponding characterization information is stored in a hash table. Periodic sorting of entries of the hash table occur for highly accessed entries in deep buckets within the hash table. Repositioning the entries within the hash table may reduce pointer chasing problems and identify program phase changes within the dynamic behavior of the application.

Abstract: Various methods and apparatus for holding a semiconductor chip package are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first plate adapted to hold a semiconductor chip package. The semiconductor chip package includes a carrier substrate and at least one semiconductor chip coupled to the carrier substrate. A second plate is formed with a first opening defining an interior peripheral surface adapted to compress an outer edge of the carrier substrate between the first plate and the second plate without engaging the at least one semiconductor chip.

Abstract: A sense amplifier circuit is provided with a first transistor arrangement comprising a first n-type field effect transistor (NFET) having a respective body node, and a second transistor arrangement comprising a second NFET having a respective body node. The second transistor arrangement is electrically coupled to the first transistor arrangement, and the body node of the first NFET is electrically coupled to the body node of the second NFET. The sense amplifier circuit also includes or cooperates with a voltage condition selector that is electrically coupled to the body node of the first NFET and to the body node of the second NFET. The voltage condition selector is configured to assert one of a plurality of voltage conditions at the body node of the first NFET and at the body node of the second NFET.

Abstract: The device degradation of integrated circuits may be compensated for by appropriately adapting the duty cycle of the clock signal. For this purpose, a correlation between the duty cycle and the overall performance characteristics of the integrated circuit may be established and may be used during the normal field operation of the device in order to modify the duty cycle. Hence, an efficient control strategy may be implemented since the duty cycle may be efficiently controlled, while at the same time a change of clock signal frequency and/or an increase of supply voltage may not be required.

Abstract: A method for improving channel carrier mobility in ultra-thin Silicon-on-oxide (UTSOI) FET devices by integrating an embedded pFET SiGe extension with raised source/drain regions. The method includes selectively growing embedded SiGe (eSiGe) extensions in pFET regions and forming strain-free raised Si or SiGe source/drain (RSD) regions on CMOS. The eSiGe extension regions enhance hole mobility in the pFET channels and reduce resistance in the pFET extensions. The strain-free raised source/drain regions reduce contact resistance in both UTSOI pFETs and nFETs.

Abstract: A method for fabricating a semiconductor device is provided. According to this method, a first gate electrode and a second gate electrode are formed overlying a first portion of a silicon substrate, and ions of a first conductivity-type are implanted into a second portion of the silicon substrate to define a first conductivity-type diode region within the silicon substrate. Ions of a second conductivity-type are implanted into a third portion of the silicon substrate to define a second conductivity-type diode region within the silicon substrate. During one of the steps of implanting ions of the first conductivity-type and implanting ions of the second conductivity-type, ions are also implanted into at least part of the first portion to define a separation region within the first portion. The separation region splits the first portion into a first well device region and a second well device region. The separation region is formed in series between the first well device region and the second well device region.

Abstract: A clock generator system (400) includes a phase locked loop (PLL) (402), a first clock generator (404), and a second clock generator (406). The PLL (402) includes a first output configured to provide a first clock signal at a first frequency and a second output configured to provide a second clock signal at the first frequency. The second clock signal is out-of-phase with the first clock signal. An output of the first clock generator (404) is configured to provide a first generated clock signal whose effective frequency is based on both the first and second clock signals and a first mode signal. An output of the second clock generator (406) is configured to provide a second generated clock signal whose effective frequency is based on both the first and second clock signals and a second mode signal.

Abstract: A method may include forming a gate electrode over a fin structure, depositing a first metal layer on a top surface of the gate electrode, performing a first silicide process to convert a portion of the gate electrode into a metal-silicide compound, depositing a second metal layer on a top surface of the metal-silicide compound, and performing a second silicide process to form a fully-silicided gate electrode.

Abstract: A technique for constraint management and validation for template-based device designs is disclosed. The technique includes generating a template-level representation of an electronic device design based on a transistor-level representation of the electronic device design. The template-level representation includes one or more hierarchies of templates. Each template represents a corresponding portion of the electronic device design. The technique further includes determining constraint declarations associated with the electronic device design and verifying whether there is a functional equivalence between the template-level representation to a register-transfer-level (RTL) representation of the electronic device design. The technique additionally includes verifying whether the constraint declarations are valid and verifying the electronic device design responsive to verifying the functional equivalence and verifying the constraint declarations.

Abstract: Focus monitoring for a photolithographic applications is provided by illuminating a photoresist layer with a light beam transmitted through a first binary mask to define a circuit pattern on an underlying substrate and then illuminating the photoresist layer with an unbalanced off-axis light beam transmitted through a second binary mask. The second mask contains a shifting feature configuration in one portion, while another portion blocks light transmission to the chip design area of the photoresist. After development of the photoresist layer, the pattern formed by illumination of the second mask can be compared with a predefined reference feature on the photoresist layer to determine whether a shift, if any, is within acceptable focus limits.

Abstract: A system and method for real-time power estimation. A core may be divided into units. Each unit is simulated to achieve a real power consumption characterization. The power consumption is sampled. Statistical analysis is performed that assumes the core has node capacitance switching behavior that is approximated by a stationary random process with a Poisson distribution. The statistical analysis determines the number of samples to take during a sample interval. The operational frequency, sample interval, and number of samples are used to determine the number of signals to sample. Signals are chosen that have a high correlation with the node capacitance switching behavior, such as clock enable signals on the last stage of a clock distribution system. Weights with tuned values are assigned to each sampled signal. Sampling occurs during every predetermined number of clock cycles. The weights of asserted sampled signals are summed in order to determine a repeatable power estimation value.

Abstract: A system and method are provided to facilitate dual damascene interconnect integration with two imprint acts. The method provides for creation of a pair of translucent imprint molds containing the dual damascene pattern to be imprinted. The first imprint mold of the pair contains the via features of the dual damascene pattern and the second imprint mold of the pair contains the trench features. The via feature imprint mold is brought into contact with a first imaging layer deposited upon a first transfer layer which is deposited upon a dielectric layer of a substrate. The trench feature imprint mold is brought into contact with a second imaging layer deposited upon a second transfer layer which is deposited upon the first imaging layer of the substrate. When each imaging layer is exposed to a source of illumination, it cures with a structure matching the features of the corresponding imprint mold.

Abstract: A method includes performing burn-in testing of a device in a tester to generate post burn-in data. Pre-burn-in data associated with the device is compared to the post burn-in data. The device is identified as an outlier device based on the comparison.

Abstract: A method, system, and computer program product are provided for adjusting write timing in a memory device based on a command protocol. For instance, the method can include enabling a write clock data recovery (WCDR) mode of operation. The method can also include transmitting WCDR data from a processing unit to the memory device during the WCDR mode of operation and another mode of operation of the memory device. Based on a phase shift in the WCDR data, a phase difference between a signal on a data bus and a write clock signal can be adjusted. Further, the method can include transmitting the signal on the data bus based on the adjusted phase difference between the signal on the data bus and the write clock signal.

Abstract: A system and method for efficient floating-point rounding in computer systems. A computer system may include at least one floating-point unit for floating-point arithmetic operations such as addition, subtraction, multiplication, division and square root. For the division operation, the constraints for the remainder may be relaxed in order to reduce the area for look-up tables. An extra internal precision bit may not be used. Only one quotient may be calculated, rather than two, further reducing needed hardware to perform the rounding. Comparison logic may be required that may add a couple of cycles to the rounding computation beyond the calculation of the remainder. However, the extra latency is much smaller than a second floating-point multiply accumulate latency.