Abstract: A method and mechanism for managing requests to a resource. A request queue receives requests from multiple requestors and maintains a status for each requestor indicating how many requests the requestor has permission to issue. Upon initialization, the request queue allots to each requestor a predetermined number of “hard” entries, and a predetermined number of “free” entries. Un-allotted entries are part of a free pool of entries. If a requestor has an available entry, the requestor may submit a request to the request queue. After receiving a request, the request queue may allot a free pool entry to the requestor if the free pool currently has entries available. Upon de-allocation of a queue entry, if the entry corresponds to a hard entry, then the hard entry is re-allotted to the same requestor. If the entry is a free entry, the entry is made available and a free pool counter is incremented.

Abstract: By taking into consideration tool-specific distortion signatures and reticle-specific placement characteristics in an alignment control system, the control quality of sophisticated APC strategies may be significantly enhanced. Respective correction data may be established on the basis of any combinations of tool/reticles and layers to be aligned to each other, which may modify the respective target values of alignment parameters used for controlling the alignment process on the basis of standard overlay measurement data obtained from dedicated overlay marks.

Abstract: A method that includes forming a gate of a semiconductor device on a substrate and forming a recess for an embedded silicon-straining material in source and drain regions for the gate. In this method, a proximity value, which is defined as a distance between the gate and a closest edge of the recess, is controlled by controlling formation of an oxide layer provided beneath the gate. The method can also include feedforward control of process steps in the formation of the recess based upon values measured during the formation of the recess. The method can also apply feedback control to adjust a subsequent recess formation process performed on a subsequent semiconductor device based on the comparison between a measured proximity value and a target proximity value to decrease a difference between a proximity value of the subsequent semiconductor device and the target proximity value.

Abstract: A digital level shifter is disclosed that receives an input voltage from a first voltage domain, and provides an output voltage to a second voltage domain. The level shifter includes transistors configured in parallel with input transistors of the level shifter in order to place the output of the level shifter in a determinate state when one of the voltage domains is placed in a low power state. Further, the level shifter includes output transistors configured to equalize a rise time slew rate and fall time slew rate, improving the reliability of the level shifter as the voltage in each voltage domain varies.

Abstract: By performing a planarization process, for instance based on a planarization layer, prior to forming a resist mask for selectively removing a portion of a stressed contact etch stop layer, the strain-inducing mechanism of a subsequently deposited further contact etch stop layer may be significantly improved.

Abstract: By taking into consideration the measurement uncertainties in the form of standard errors, the performance of APC controllers may be efficiently enhanced by using the standard errors as a control input. For example, the filter parameter of an EWMA filter may be efficiently scaled on the basis of a standard error of measurement data.

Abstract: A memory subsystem includes a first memory, a second memory, a first compressor, and a first decompressor. The first memory is configured to store instruction bytes of a fetch window and to store first predecode information and first branch information that characterizes the instruction bytes of the fetch window. The second memory is configured to store the instruction bytes of the fetch window upon eviction of the instruction bytes from the first memory and to store combined predecode/branch information that also characterizes the instruction bytes of the fetch window. The first compressor is configured to compress the first predecode information and the first branch information into the combined predecode/branch information.

Abstract: A technique is provided that enables the formation of metal silicide individually for N-channel transistors and P-channel transistors, while at the same time a strain-inducing mechanism is also provided individually for each transistor type. In this way, a cobalt silicide having a reduced distance to the channel region of an NMOS transistor may be provided, while a P-channel transistor may receive a highly conductive nickel silicide, without unduly affecting or compromising the characteristics of the N-channel transistor.

Abstract: A prefetch unit for use with a cache subsystem. The prefetch unit includes a stream storage coupled to a prefetch unit. The stream storage may include a plurality of locations configured to store a plurality of entries each corresponding to a respective range of prefetch addresses. The prefetch control may be configured to prefetch an address in response to receiving a cache access request including an address that is within the respective range of prefetch addresses of any of the plurality of entries.

Abstract: A method and apparatus are contemplated for increasing the number of available instructions in an instruction set architecture. The new instructions extend the number of general-purpose registers and include three or more operands. A combination of an escape code field, an opcode field, an operation configuration field and an operation size field determines a unique new instruction operation. A source operand extension field includes bits to be combined with other fields in order to extend the number of source operand values for general-purpose registers.

Abstract: A method for fabricating a MOSFET (e.g., a PMOS FET) includes providing a semiconductor substrate having surface characterized by a (110) surface orientation or (110) sidewall surfaces, forming a gate structure on the surface, and forming a source extension and a drain extension in the semiconductor substrate asymmetrically positioned with respect to the gate structure. An ion implantation process is performed at a non-zero tilt angle. At least one spacer and the gate electrode mask a portion of the surface during the ion implantation process such that the source extension and drain extension are asymmetrically positioned with respect to the gate structure by an asymmetry measure.

Abstract: By forming a trench-like test opening above a respective test metal region during the etch process for forming via openings in a dielectric layer stack of sophisticated metallization structures of semiconductor devices, the difference in etch rate in the respective openings may be used for generating a corresponding variation of electrical characteristics of the test metal region. Consequently, by means of the electrical characteristics, respective variations of the etch process may be identified.

Abstract: By forming a portion of a PN junction within strained silicon/germanium material in SOI transistors with a floating body architecture, the junction leakage may be significantly increased, thereby reducing floating body effects. The positioning of a portion of the PN junction within the strained silicon/germanium material may be accomplished on the basis of implantation and anneal techniques, contrary to conventional approaches in which in situ doped silicon/germanium is epitaxially grown so as to form the deep drain and source regions. Consequently, high drive current capability may be combined with a reduction of floating body effects.

Abstract: Receiver architectures and related bias circuits for a data processor are provided. One embodiment of a receiver architecture for a computer processor includes a first linear receiver stage configured to receive a first input, a second input, and a first bias voltage. The first linear receiver stage is configured to generate a first differential output signal in response to a comparison between the first input and the second input. The first differential output signal has a specified programmable voltage swing that is influenced by the first bias voltage. The receiver architecture also includes a first programmable bias circuit coupled to the first linear receiver stage. The first programmable bias circuit is configured to generate the first bias voltage.

Abstract: A system and method for conducting a financial transaction is disclosed. The system includes a first memory location embedded in a personal portable device. The first memory location stores a plurality of personal financial data files associated with a user. The system also includes a second memory location to store biometric information and a first input interface to receive authentication information after initiation of a purchase transaction session. The system also includes a security module including an input coupled to the first interface to authenticate the authentication information based on the biometric information and an output interface comprising an input coupled to the first memory location and an output to provide personal financial data file information to a host device.

Abstract: A method includes defining a hierarchy of test routines in a test program for testing integrated circuit devices. A first device is tested at a first screening level in the hierarchy. The first device is tested at a second detailed level in the hierarchy responsive to the first device failing the testing at the first screening level.

Abstract: A system and method for data forwarding from a store instruction to a load instruction during out-of-order execution, when the load instruction address matches against multiple older uncommitted store addresses or if the forwarding fails during the first pass due to any other reason. In a first pass, the youngest store instruction in program order of all store instructions older than a load instruction is found and an indication to the store buffer entry holding information of the youngest store instruction is recorded. In a second pass, the recorded indication is used to index the store buffer and the store bypass data is forwarded to the load instruction. Simultaneously, it is verified if no new store, younger than the previously identified store and older than the load has not been issued due to out-of-order execution.

Abstract: By forming a thin passivation layer after the formation of openings connecting to a highly reactive metal region, any queue time effects may be significantly reduced. Prior to the deposition of a barrier/adhesion layer, the passivation layer may be efficiently removed on the basis of a heat treatment so as to initiate material removal by evaporation.

Abstract: A method of forming a semiconductor structure includes providing a substrate having a first feature and a second feature. A mask is formed over the substrate. The mask covers the first feature. An ion implantation process is performed to introduce ions of a non-doping element into the second feature. The mask is adapted to absorb ions impinging on the first feature. After the ion implantation process, an annealing process is performed.

Abstract: A method includes transforming, based on a first transform, a first markup language document associated with a first version of a schema to generate a second markup language document associated with a second version of the schema. The second markup language document is representative of a third markup language document associated with the second version of the schema and the first transform represents a transform from the first version of the schema to the second version of the schema. The method further includes comparing the second markup language document to the third markup language document to identify whether at least one discrepancy exists between the second markup language document and the third markup language document. The method additionally includes determining a suitability of the first transform based on the comparison of the second markup language document to the third markup language document.