Abstract: A process for fabricating a semiconductor device, including applying an immersion lithography medium to a surface of a semiconductor wafer; exposing a material on the surface of the semiconductor wafer to electromagnetic radiation having a selected wavelength; and applying supercritical carbon dioxide to the semiconductor wafer to remove the immersion lithography medium from the surface of the semiconductor wafer. In one embodiment, the process includes recovery of the immersion lithography medium.

Abstract: By forming a substantially continuous and uniform semiconductor alloy in one active region while patterning the semiconductor alloy in a second active region so as to provide a base semiconductor material in a central portion thereof, different types of strain may be induced, while, after providing a corresponding cover layer of the base semiconductor material, well-established process techniques for forming the gate dielectric may be used. In some illustrative embodiments, a substantially self-aligned process is provided in which the gate electrode may be formed on the basis of layer, which has also been used for defining the central portion of the base semiconductor material of one of the active regions. Hence, by using a single semiconductor alloy, the performance of transistors of different conductivity types may be individually enhanced.

Abstract: A multiple-core processor having a hierarchical microcode store. A processor may include multiple processor cores, each configured to independently execute instructions defined according to a programmer-visible instruction set architecture (ISA). Each core may include a respective local microcode unit configured to store microcode entries. The processor may also include a remote microcode unit accessible by each of the processor cores. Any given one of the processor cores may be configured to generate a given microcode entrypoint corresponding to a particular microcode entry including one or more operations to be executed by the given processor core, and to determine whether the particular microcode entry is stored within the respective local microcode unit of the given core. In response to determining that the particular microcode entry is not stored within the respective local microcode unit, the given core may convey a request for the particular microcode entry to the remote microcode unit.

Abstract: A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

Abstract: A dielectric cap, interconnect structure containing the same and related methods are disclosed. The inventive dielectric cap includes a multilayered dielectric material stack wherein at least one layer of the stack has good oxidation resistance, Cu diffusion and/or substantially higher mechanical stability during a post-deposition curing treatment, and including Si—N bonds at the interface of a conductive material such as, for example, Cu. The dielectric cap exhibits a high compressive stress and high modulus and is still remain compressive stress under post-deposition curing treatments for, for example: copper low k back-end-of-line (BEOL) nanoelectronic devices, leading to less film and device cracking and improved reliability.

Abstract: A method and apparatus for sorting data into spatial bins or buckets using a graphics processing unit (GPU). The method takes unsorted point data as input and scatters the points, in sorted order, into a set of bins. This key operation enables construction of a spatial data structure that is useful for applications such as particle simulation or collision detection. The disclosed method achieves better performance scaling than previous methods by exploiting geometry shaders to progressively trim the size of a working set. The method also leverages predicated rendering functionality to allow early termination without CPU/GPU synchronization. Furthermore, unlike previous techniques, the method can guarantee sorted output without requiring sorted input. This allows the method to be used to implement a form of bucket sort using the GPU.

Abstract: A shader pipe texture filter utilizes a level one cache system as a primary method of storage but with the ability to have the level one cache system read and write to a level two cache system when necessary. The level one cache system communicates with the level two cache system via a wide channel memory bus. In addition, the level one cache system can be configured to support dual shader pipe texture filters while maintaining access to the level two cache system. A method utilizing a level one cache system as a primary method of storage with the ability to have the level one cache system read and write a level two cache system when necessary is also presented. In addition, level one cache systems can allocate a defined area of memory to be sharable amongst other resources.

Abstract: A processor includes a cache hierarchy including a level-1 cache and a higher-level cache. The processor maps a portion of physical memory space to a portion of the higher-level cache, executes instructions, at least some of which comprise microcode, allows microcode to access the portion of the higher-level cache, and prevents instructions that do not comprise microcode from accessing the portion of the higher-level cache. The first portion of the physical memory space can be permanently allocated for use by microcode. The processor can move one or more cache lines of the first portion of the higher-level cache from the higher-level cache to a first portion of the level-1 cache, allow microcode to access the first portion of the first level-1 cache, and prevent instructions that do not comprise microcode from accessing the first portion of the first level-1 cache.

Abstract: The present invention is directed to an SOI device with charging protection and methods of making same. In one illustrative embodiment, a device is formed on an SOI substrate including a bulk substrate, a buried insulation layer and an active layer. The device includes a transistor formed in an isolated portion of the active layer, the transistor including a gate electrode and a source region. The device further includes a first conductive bulk substrate contact extending through the active layer and the buried insulation layer, the first conductive bulk substrate contact being conductively coupled to the source region and the bulk substrate, and a second conductive bulk substrate contact extending through the active layer and the buried insulation layer, the second conductive bulk substrate being conductively coupled to the gate electrode and the bulk substrate.

Abstract: A wireless computer system (30) is formed to have a host section (31) and a wireless hardware section (40). A first portion of a transmission frame is formed in system memory (36) of a host section (31) and a second portion of the transmission frame is formed in the wireless hardware section (40). The wireless hardware section (40) begins transmitting the first transmission frame portion while downloading the second transmission frame portion from the system memory (36) into the wireless hardware section (40).

Abstract: Methods and systems are provided for processing video data. In an embodiment, a method of scaling video data includes scaling one frame based on at least one seam of pixels of the one frame. The seam of pixels is selected based at least on information derived from at least one of: a previous frame and metadata relating to the one frame. In an embodiment, a method of processing video data includes determining whether a frame is to be scaled based on at least one seam of pixels based on at least one of information derived from the frame or metadata relating to the frame. The at least one seam of pixels is selected based at least on an energy associated with each pixel of the at least one seam of pixels.

Abstract: A content addressable memory includes a first plurality of search lines, a second plurality of search lines, a first match line, and a storage location. Each search line of the first plurality of search lines receives a corresponding high voltage level or low voltage level during a match detect operation, and each search line of the second plurality of search lines to receive a corresponding high voltage level or low voltage level during the match detect operation. The storage location of the content addressable memory includes a plurality of CAM cells, each CAM cell a first thyristor and second thyristor.

Abstract: A data processing device includes a first memory for use during normal operation of the device and a second memory for use during testing. The second memory stores a set of test patterns for testing of a functional module. When the data processing device is in a normal (i.e. non-test) mode of operation, data is retrieved from a first memory based on a received memory address. The retrieved data is applied to the functional module of the data processing device to perform a designated function. When the data processing device is in a test mode of operation, received memory addresses are provided to the second memory for retrieval of a test pattern associated with the address. The test pattern is applied to the functional module to generate an output pattern. The result of a test is determined by comparing the output pattern to an expected pattern.

Abstract: In one embodiment, a processor comprises an instruction buffer and a pick unit. The instruction buffer is coupled to receive instructions fetched from an instruction cache. The pick unit is configured to select up to N instructions from the instruction buffer for concurrent transmission to respective slots of a plurality of slots, where N is an integer greater than one. Additionally, the pick unit is configured to transmit an oldest instruction of the selected instructions to any of the plurality of slots even if a number of the selected instructions is greater than one. The pick unit is configured to concurrently transmit other ones of the selected instructions to other slots of the plurality of slots based on the slot to which the oldest instruction is transmitted. Some embodiments comprise a computer system including the processor and a communication device configured to communicate with another computer system.

Abstract: By monitoring a process flow in a complex manufacturing environment on the basis of a technique using standardized data structures, process-related evaluated data structures corresponding to a process history of objects may be recorded with a high degree of coverage. Furthermore, the respective data structures may be stored and maintained within a single database structure, thereby providing united handling of the respective process-related data and significantly increasing data reliability and completeness.

Abstract: A method is provided for manufacturing an integrated circuit including a short channel (SC) device and a long channel (LC) device each overlaid by an interlayer dielectric. The SC device has an SC gate stack and the LC device initially has a dummy gate. In one embodiment, the method includes the steps of removing the dummy gate to form an LC device trench, and depositing metal gate material over the SC device and the LC device. The metal gate material contacts the SC gate stack and substantially fills the LC device trench.

Abstract: A method of forming a field effect transistor comprises providing a substrate comprising a biaxially strained layer of a semiconductor material. A gate electrode is formed on the biaxially strained layer of semiconductor material. A raised source region and a raised drain region are formed adjacent the gate electrode. Ions of a dopant material are implanted into the raised source region and the raised drain region to form an extended source region and an extended drain region. Moreover, in methods of forming a field effect transistor according to embodiments of the present invention, a gate electrode can be formed in a recess of a layer of semiconductor material. Thus, a field effect transistor wherein a source side channel contact region and a drain side channel contact region located adjacent a channel region are subject to biaxial strain can be obtained.

Abstract: An electrically programmable reticle is made using at least one electrochromatic layer that changes its optical transmissibility in response to applied voltages. Transparent conductor layers are configured to the desired patterns. The electrically programmable reticles are either patterned in continuous forms that have separately applied voltages or in a matrix of rows and columns that are addressed by row and column selects such that desired patterns are formed with the application of a first voltage level and reset with the application of a second voltage level.

Abstract: An arithmetic processing unit is disclosed that can perform multiply operations, addition operations, or a combination thereof. The arithmetic processing unit can operate in two modes. The first mode supports one single, double, or extended-precision computation, and the second mode supports two simultaneous single-precision computations using the same exponent and mantissa datapaths.

Abstract: Provided is a method for synchronizing a multiple carrier receiver to receive a transmitted signal. The method includes determining a location of one or more scattered pilot carriers in a received symbol sequence and modulating the scattered pilot carriers in accordance with a single pseudorandom binary sequence. The method also includes performing phase error correction via the modulated scattered pilot carriers.