Abstract: A technique for reducing stack pointer adjustment operations when stack dependent operations, which correspond to stack dependent instructions, are encountered includes setting a stack pointer to an initial value for a stack. A number of bytes associated with the stack dependent operation is determined. A stack pointer delta is then modified based upon the number of bytes associated with the stack dependent operation. A current location in the stack is determined based on the stack pointer and the stack pointer delta.

Abstract: The invention relates to a network interface system for interfacing a host system with a network. The network interface system includes a bus interface system, a media access control system, and a security system. The network interface offloads IPsec processing from the host processor. According to the invention, the security system includes two processors for encrypting and authenticating the outgoing data. Outgoing data packets are sent alternately to one or the other processor, whereby transmission processing can be accelerated relative to receive processing.

Abstract: A drain (7) includes a lightly-doped shallow impurity region (7a) aligned with a control gate (5), and a heavily-doped deep impurity region (7b) aligned with a sidewall film (8) and doped with impurities at a concentration higher than that of the lightly-doped shallow impurity region (7a). The lightly-doped shallow impurity region (7a) leads to improvement of the short-channel effect and programming efficiency. A drain contact hole forming portion (70) is provided to the heavily-doped impurity region (7b) to reduce the contact resistance at the drain (7).

Abstract: Various embodiments of methods and systems for simultaneously testing multiple cores included in an integrated circuit are disclosed. In one embodiment, an integrated circuit may include two or more logic cores. The IC may also include structural scan test hardware coupled to the cores. This structural scan test hardware may be capable of inputting scan test vector data into scan registers associated with each of the logic cores, simultaneously executing a scan test on the logic cores included in the IC, and outputting the results of the scan tests for multiple cores to automated test equipment (ATE) simultaneously. In one embodiment, elements of the results of testing for multiple cores may be interleaved on a single output line such that an element of test result data from each core is present on an input channel to the ATE during each strobe window.

Abstract: The invention relates to a network interface system for interfacing a host system with a network. The network interface system includes a bus interface system, a media access control system, and a security system. The network interface offloads IPsec processing from the host processor. According to the invention, the security system includes two processors for encrypting and authenticating the outgoing data. Outgoing data packets are sent alternately to one or the other processor, whereby transmission processing can be accelerated relative to receive processing.

Abstract: An apparatus and method is described that provides optimal D-PSK demodulation based on the distribution of phase differences between successive D-PSK symbols. A plurality of D-PSK data symbols are received, and each symbol is characterized by a real component and an imaginary component. An angle of correlation between any two successive symbols is calculated. A variance of correlation angles is obtained by using data symbols or pilot symbols, if available. The probability of the correlation angle being each of possible phase difference according the D-PSK constellation is then determined. From the probabilities of the particular correlation angle, a probability of each input bit being a “0” or “1” is determined.

Abstract: By providing additional etch stop layers and/or etch protection layers, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. Consequently, conductive line erosion and/or penetration into extension regions may be significantly reduced, thereby improving the reliability and performance of corresponding semiconductor devices.

Abstract: A network manager, configuring for detecting network nodes and configuring network switches, determines addressing field lengths to be used for addressing the network nodes and switching data packets between the network nodes based on the number of detected network nodes. The network manager detects the network nodes by exploring the network according to prescribed explorer procedures. The network manager selects a size of address fields to be used for switching data packets traversing the network, based on the number of detected network nodes. The network manager configures each network switch within the network to switch the data packets based on a switching tag having the selected size and positioned at the start of the packet. Hence, each network switch is able to generate forwarding decisions based on the switching tag at the beginning of each received data packet. The switching tag is distinct from, and substantially smaller than, the existing destination address field.

Abstract: A switching device and methods of making and operating the same are provided. In one aspect, a method of operating a switching device is provided that includes providing a MOS transistor that has a gate, a source region, a drain region and a body region. A bipolar transistor is provided that has a collector, a base and an emitter. The body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor. Activation of the MOS transistor causes the bipolar transistor to turn on. The MOS transistor is activated to turn on the bipolar transistor and the bipolar transistor delivers current to the source region.

Abstract: Various methods and apparatus for establishing a thermal pathway for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes forming a metal layer on a semiconductor chip and forming a gel-type thermal interface material layer on the metal layer. A solvent and a catalyst material are applied to the metal layer prior to forming the gel-type thermal interface material layer to facilitate bonding between the gel-type thermal interface material layer and the metal layer.

Abstract: A first transistor of a level shifter provides conductivity between a reference voltage and a node of the level shifter to hold a state of the level shifter output. When an input signal of the level shifter switches, additional transistors assist in reducing the conductivity of the first transistor. This enhances the ability of the level shifter to change the state of the output in response to the change in the input signal, thereby improving the writeability of the level shifter.

Abstract: A new technique is disclosed in which a barrier/capping layer for a copper-based metal line is formed by using a thermal-chemical treatment with a surface modification on the basis of a silicon-containing precursor followed by an in situ plasma-based deposition of silicon nitride and/or silicon carbon nitride. The thermal-chemical treatment is performed on the basis of an ammonium/nitrogen mixture in the absence of any plasma ambient.

Abstract: An integrated circuit (1600) includes a debug module (1602) and a clock generator (1610). The debug module (1602) is configured to receive a test pattern and provide a mode signal based on the test pattern. The clock generator (1610) includes a first clock input configured to receive a first clock signal, a second clock input configured to receive a second clock signal, and a mode input configured to receive the mode signal. The first and second clock signals are out of phase and have the same clock frequency. The clock generator (1610) is configured to provide a generated clock signal whose effective frequency is based on the first and second clock signals and the mode signal.

Abstract: Methods are disclosed for providing stacking fault reduced epitaxially grown silicon for use in hybrid surface orientation structures. In one embodiment, a method includes depositing a silicon nitride liner over a silicon oxide liner in an opening, etching to remove the silicon oxide liner and silicon nitride liner on a lower surface of the opening, undercutting the silicon nitride liner adjacent to the lower surface, and epitaxially growing silicon in the opening. The silicon is substantially reduced of stacking faults because of the negative slope created by the undercut.

Abstract: An integrated circuit memory system that includes: providing a substrate; forming a silicon rich charge storage layer over the substrate; forming a first isolation trench through the silicon rich charge storage layer in a first direction; and forming a second isolation trench through the silicon rich charge storage layer in a second direction.

Abstract: A device is provided that includes a structure having a sidewall surface, a layer of material provided on the sidewall surface, and a device structure provided in contact with the layer of material. Fabrication techniques includes a process that includes forming a structure having a sidewall surface, forming a layer of material on the sidewall surface, and forming a device structure in contact with the layer of material, where the device structure and the layer of material are components of a device.

Abstract: A process is provided that includes forming a first mask on an underlying layer, where the mask has two adjacent portions with an open gap therebetween, and depositing a second mask material within the open gap and at an inclined angle with respect to an upper surface of the underlying layer to form a second mask. In another implementation, a process is provided that includes forming a first mask on an underlying layer, where the mask has a pattern that includes an open gap, and depositing a second mask material within the open gap to form a second mask, where particles of the second mask material are directed in parallel or substantially in parallel to a line at an inclined angle with respect to an upper surface of the underlying layer.

Abstract: A processing unit, method, and graphics processing system are provided for processing a plurality of frames of graphics data. For instance, the processing unit can include a first plurality of graphics processing units (GPUs), a second plurality of GPUs, and a plurality of compositors. The first plurality of GPUs can be configured to process a first frame of graphics data. Likewise, the second plurality of GPUs can be configured to process a second frame of graphics data. Further, each compositor in the plurality of compositors can be coupled to a respective GPU from the first and second pluralities of GPUs, where the plurality of compositors is configured to sequentially pass the first and second frames of graphics data to a display module.

Abstract: A graphene-based device is formed with a substrate having a trench therein, a device structure on the substrate and within the trench, a graphene layer over the device structure, and a protective layer over the graphene layer. Fabrication techniques include forming a trench in a substrate, forming a device structure within the trench, forming a graphene layer over the device structure, and forming a protective layer over the graphene layer.

Abstract: A graphene-based device is formed with a trench in one or more layers of material, a graphene layer within the trench, and a device structure on the graphene layer and within the trench. Fabrication techniques includes forming a trench defined by one or more layers of material, forming a graphene layer within the trench, and forming a device structure on the graphene layer and within the trench.