Abstract: A memory device includes memory sleep logic operative to detect a repetitive pattern within at least one memory block, and place the memory block into a sleep mode in response to detecting the repetitive pattern. The memory device memory sleep logic may also provide a response to read commands to the memory block while it is in sleep mode, where the response is a constant output for any address location of the memory block. The memory device memory sleep logic may include pattern detection logic, associated with each memory block, to detect the repetitive pattern; and data port logic, coupled to the pattern detection logic, operative to receive an activation command from the pattern detection logic, and operative to return a constant output pattern in response to any read command to read data from the memory block.

Abstract: A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. Source/drain junctions are formed in the semiconductor substrate. A silicide is formed on the source/drain junctions and on the gate. An interlayer dielectric having contact holes therein is formed above the semiconductor substrate. Contact liners are formed in the contact holes, and contacts are then formed over the contact liners. The contact liners are nitrides of the contact material, and formed at a temperature below the thermal budget for the silicide.

Abstract: A test structure for integrated circuit (IC) device fabrication includes a plurality of test structure chains formed at various regions of an IC wafer, each of the plurality of test structure chains including one or more vias; each of the one or more vias in contact with a conductive line disposed thereabove, the conductive line being configured such that at least one dimension thereof varies from chain to chain so as to produce variations in seed layer and liner layer thickness from chain to chain for the same deposition process conditions.

Abstract: A software development technique is provided using target system virtualization software simulating behaviour of a target system. A target device driver running on a host system issues memory access commands to the target system virtualization software rather than to a memory interface unit of the host system. The memory interface unit may be an SRAM (Static Random Access Memory) interface. The target system may be an EGPRS (Enhanced General Packet Radio Service) modem.

Abstract: MOS structures with contact projections for lower contact resistance and methods for fabricating such MOS structures have been provided. In an embodiment, a method comprises providing a semiconductor substrate, fabricating a gate stack on the substrate, and forming a contact projection on the substrate. Ions of a conductivity-determining type are implanted within the substrate using the gate stack as an ion implantation mask to form impurity-doped regions within the substrate. A metal silicide layer is formed on the contact projection and a contact is formed to the metal silicide layer. The contact is in electrical communication with the impurity-doped regions via the contact projection.

Abstract: An integrated chip architecture is provided which allows for efficiently testing multiple cores included in the integrated chip architecture and storing corresponding diagnosis data which include an indication of the failure-causing test data and the corresponding test analysis data. Embodiments are provided which enable that the test time and the number of required Input/Output test pins is nearly independent from the number of cores included in the multicore chip. The presented embodiments provide a multicore chip architecture which allows for providing input data to the multiple cores in parallel for simultaneously testing the multiple cores, and analyzing the resulting multiple test outputs on chip. As a result of this analysis embodiments may store on chip an indication for those cores that have not successfully passed the test, together with respective diagnosis data.

Abstract: Multiple gate transistors are provided with a dual stress layer for increased channel mobility and enhanced effective and saturated drive currents. Embodiments include transistors comprising a first stress layer under the bottom gate and a second stress layer overlying the top gate. Embodiments further include transistors with the bottom gate within or through the first stress layer. Methodology includes sequentially depositing stressed silicon nitride, nitride, oxide, amorphous silicon, and oxide layers on a substrate having a bottom oxide layer thereon, patterning to define a channel length, depositing a top nitride layer, patterning stopping on the stressed silicon nitride layer, removing the amorphous silicon layer, epitaxially growing silicon through a window in the substrate to form source, drain, and channel regions, doping, removing the deposited nitride and oxide layers, growing gate oxides, depositing polysilicon to form gates, growing isolation oxides, and depositing the top stress layer.

Abstract: In one embodiment, an input/output (I/O) memory management unit (IOMMU) comprises at least one memory and control logic coupled to the memory. The memory is configured to store translation data corresponding to one or more I/O translation tables stored in a memory system of a computer system that includes the IOMMU. The control logic is configured to translate an I/O device-generated memory request using the translation data. The translation data includes a type field indicating one or more attributes of the translation, and the control logic is configured to control the translation responsive to the type field.

Abstract: Carbon contamination of optical elements in an exposure tool is minimized by incorporating a hydrocarbon getter. Embodiments include EUV lithography tools provided with at least one hydrocarbon getter comprising a substrate and a high energy source, such as an electron gun or separate EUV source, positioned to direct an energy beam, having sufficient energy to crack heavy hydrocarbons and form carbon, on the substrate. Embodiments also include exposure tools equipped with a hydrocarbon getter comprising an energy source positioned to impinge a beam of energy on a quartz crystal thickness monitor, a residual gas analyzer, and a controller to control the electron-current and maintain the amount of hydrocarbons in the system at a predetermined low level.

Abstract: A method of manufacturing a semiconductor device includes forming an interface layer, a nitrided gate dielectric, a gate electrode, and source drain regions. The interface layer is formed in a substrate by laser processing. The nitrided gate dielectric is formed over the interface layer by laser processing. The gate electrode is formed over the substrate and the gate dielectric after the laser processing step, and source/drain regions are formed in the substrate proximate to the gate electrode.

Abstract: A method of manufacturing a memory device forms a first dielectric layer over a substrate, forms a charge storage layer over the first dielectric layer, forms a second dielectric layer over the charge storage layer, and forms a control gate layer over the second dielectric layer. The method also forms a hard mask layer over the control gate layer, forms a bottom anti-reflective coating (BARC) layer over the hard mask layer, and provides an etch chemistry that includes tetrafluoromethane (CF4) and trifluoromethane (CHF3) to etch at least the control gate layer.

Abstract: A processor includes a processor core coupled to an address translation storage structure. The address translation storage structure includes a plurality of entries, each corresponding to a memory page. Each entry also includes a physical address of a memory page, and a private page indication that indicates whether any other processors have an entry, in either a respective address translation storage structure or a respective cache memory, that maps to the memory page. The processor also includes a memory controller that may inhibit issuance of a probe message to other processors in response to receiving a write memory request to a given memory page. The write request includes a private page attribute that is associated with the private page indication, and indicates that no other processor has an entry, in either the respective address translation storage structure or the respective cache memory, that maps to the memory page.

Abstract: A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

Abstract: Methods for forming copper interconnects for semiconductor devices are provided. In an exemplary embodiment, a method for forming a copper interconnect comprises depositing copper into a trench formed in a dielectric material overlying a semiconductor material. A force is applied to the semiconductor material and stress is induced within the copper deposited in the trench. Recrystallization and grain growth are effected within the copper and the stress is removed.

Abstract: A single test access port, such as a JTAG-based debug port may be utilized to perform debug operations on logic cores of a multi-core integrated circuit, such as a multi-core processor. The shared debug port may respond to a particular command to enter a debugging mode and may be configured to forward all commands and data to a debugging controller of the integrated circuit during debugging. A mask register may be used to indicate which logic cores of the multi-core integrated circuit should be debugged. Additionally, custom debugging commands may include mask or core select fields to indicate which logic cores should be affected by the particular command. Debugging mode may be initialized for one or more logic cores either externally, such as be asserted a DBREQ signal, or internally, such as by configuring one or more breakpoints.

Abstract: A method includes collecting optical data from an unpatterned region including a first process layer. At least one optical parameter of the first process layer is determined based on the optical data associated with the unpatterned region. Optical data is collected from a patterned region including a second process layer. At least one characteristic of the patterned region is determined based on the optical data associated with the patterned region and the at least one optical parameter.

Abstract: A circuit including control logic; and configurable impedance logic, operatively coupled to the control logic, comprising a configurable transistor structure operative to selectively change from a high impedance mode where the configurable transistor structure is configurable as a plurality of series connected diodes having their cathodes coupled together, and a low impedance mode where the configurable transistor structure is configurable to include a plurality of cascoded transistors. The circuit may further include at least one control signal line from the control logic to the configurable impedance logic, where the control signal line is operative to provide a control signal for configuring the configurable impedance logic.

Abstract: A level shifting circuit includes a first stage and a second stage. The first stage and second stage are operatively coupled to a first and second power supply. The first stage translates a differential input voltage into an intermediate differential voltage. The second stage translates the intermediate differential voltage into a differential output voltage and provides feedback to the first stage in response to translating the intermediate differential voltage. The first stage reduces current flow between the first and second power supply through the second stage in response to the feedback.

Abstract: A method for forming a field effect transistor (FET) device includes forming a gate conductor and gate dielectric on an active device area of a semiconductor wafer, the semiconductor wafer including a buried insulator layer formed over a bulk substrate and a semiconductor-on-insulator layer initially formed over the buried insulator layer. Source and drain extensions are formed in the semiconductor-on-insulator layer, adjacent opposing sides of the gate conductor, and source and drain sidewall spacers are formed adjacent the gate conductor. Remaining portions of the semiconductor-on-insulator layer adjacent the sidewall spacers and are removed so as to expose portions of the buried insulator layer. The exposed portions of the buried insulator layer are removed so as to expose portions of the bulk substrate. A semiconductor layer is epitaxially grown on the exposed portions of the bulk substrate and the source and drain extensions, and source and drain implants are formed in the epitaxially grown layer.

Abstract: A method and apparatus for dynamic allocation of processing resources and tasks, including multimedia tasks. Tasks are queued, available processing resources are identified, and the available processing resources are allocated among the tasks. The available processing resources are provided with functional programs corresponding to the tasks. The tasks are performed using the available processing resources to produce resulting data, and the resulting data is passed to an input/output device.