Abstract: Various embodiments of methods and systems for providing virtual leaf driver nodes in a clock tree to drive a clock grid of an integrated circuit are disclosed. An integrated circuit may include a large number of clocked elements such as registers, flip-flops, etc. whose operation is synchronized by one or more clocks. For example, an operation performed by circuitry on one side of the die may need to occur at precisely the same time as another operation performed by circuitry on the other side of the die. In order to assure synchronicity of these events, a clock grid may be provided in the IC that is driven by virtual leaf driver nodes. The clock tree driving the clock grid may include a tier of leaf buffers. The output of a leaf buffer may be split, and the branches of the output connected to separate points on the clock grid.

Abstract: A method includes forming a plurality of functional features on a semiconductor layer in a first region. A non-functional feature corresponding to the functional feature is formed adjacent at least one of the functional features disposed on a periphery of the region. A stress-inducing layer is formed over at least a portion of the functional features and the non-functional feature. A device includes a semiconductor layer, a first dummy gate electrode, and a stress-inducing layer. The plurality of transistor gate electrodes is formed above the semiconductor layer. The plurality includes at least a first end gate electrode, a second end gate electrode, and at least one interior gate electrode. The first dummy gate electrode is disposed proximate the first end gate electrode. The stress-inducing layer is disposed over at least a portion of the plurality of transistor gate electrodes and the first dummy gate electrode.

Abstract: A method includes defining a plurality of objectives for a film formation process and employing a control equation incorporating the plurality of objectives to generate at least one operating recipe parameter for the film formation process. A system includes a film formation unit and a process control unit. The film formation unit is adapted to perform a film formation process in accordance with an operating recipe. The process control unit is adapted to define a plurality of objectives for the film formation process and employ a control equation incorporating the plurality of objectives to generate at least one operating recipe parameter for the film formation process.

Abstract: Carbon contamination of optical elements in an exposure tool is minimized by incorporating a hydrocarbon getter. Embodiments include EUV lithography tools provided with at least one hydrocarbon getter comprising a substrate and a high energy source, such as an electron gun or separate EUV source, positioned to direct an energy beam, having sufficient energy to crack heavy hydrocarbons and form carbon, on the substrate. Embodiments also include exposure tools equipped with a hydrocarbon getter comprising an energy source positioned to impinge a beam of energy on a quartz crystal thickness monitor, a residual gas analyzer, and a controller to control the electron-current and maintain the amount of hydrocarbons in the system at a predetermined low level.

Abstract: In one embodiment, a processing node includes a first processor core and a second processor core. The first processor core includes a first cache memory, such as an L2 cache, for example. The second processor core includes a second cache memory, such as an L2 cache memory. The processing node further includes a configuration unit that is coupled to the first processor core and the second processor core. The configuration unit may selectably disable portions of the first and the second cache memories.

Abstract: In fabricating an electronic structure, a substrate is provided, and a first barrier layer is provided on the substrate. A germanium thin film diode is provided on the first barrier layer, and a second barrier layer is provided on the germanium thin film diode. A memory device is provided over and connected to the second barrier layer.

Abstract: The present invention provides a system for handling extra contexts for shader constants, and applications thereof. In an embodiment there is provided a computer-based method for executing a series of compute packets in an execution pipeline. The execution pipeline includes a first plurality of registers configured to store state-updates of a first type and a second plurality of registers configured to store state-updates of a second type. A first number of state-updates of the first type and a second number of state-updates of the second type are respectively identified and stored in the first and second plurality of registers. A compute packet is sent to the execution pipeline responsive to the first number and the second number. Then, the compute packet is executed by the execution pipeline.

Abstract: Methods are provided for fabricating an SOI component on a semiconductor layer/insulator/substrate structure including a diode region formed in the substrate. The method comprises, in accordance with one embodiment, forming a shallow trench isolation (STI) region extending through the semiconductor layer to the insulator. A layer of polycrystalline silicon is deposited overlying the STI and the semiconductor layer and is patterned to form a polycrystalline silicon mask comprising at least a first mask region and a second mask region. First and second openings are etched through the STI and the insulator using the mask as an etch mask. N- and P-type ions are implanted into the diode region through the openings to form the anode and cathode of the diode. The anode and cathode are closely spaced and precisely aligned to each other by the polycrystalline silicon mask. Electrical contacts are made to the anode and cathode.

Abstract: A structure for electrically isolating semiconductor devices includes a semiconducting layer and a layer of aluminum oxide formed in a pattern over the semiconducting layer, where the pattern exposes a portion of the semiconducting layer. The structure further includes an electrical isolation region formed in the exposed portion of the semiconducting layer, where the isolation region does not substantially encroach a region beneath the layer of aluminum oxide.

Abstract: Disclosed are methods and systems of etching copper containing materials so that they have smooth and/or planar surface. In this connection, the systems and methods employ two different solutions to accomplish the etching. The first solution oxidizes the surface of the copper containing material and forms a passivating film. The second solution removes the passivating film in a controlable manner.

Abstract: A method is provided for fabricating a silicon on insulator (SOI) device that includes a silicon substrate, a buried insulator layer overlying the silicon substrate, and a monocrystalline silicon layer overlying the buried insulator layer. The method comprises the steps of forming an MOS capacitor coupled between a first voltage bus and a second voltage bus. The MOS capacitor has a gate electrode material forming a first plate of the MOS capacitor and an impurity doped region in the monocrystalline silicon layer beneath the gate electrode material forming a second plate of the MOS capacitor. The first voltage bus is coupled to the first plate of the capacitor and the second voltage bus is coupled to the second plate of the capacitor. The method further includes forming an electrical discharge path coupling the second plate of the MOS capacitor to the silicon substrate.

Abstract: The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.

Abstract: A method and apparatus for use in an automated manufacturing environment are disclosed. The method includes autonomously scheduling a consumer manufacturing domain entity for the consumption of services provided by a plurality of provider manufacturing domain entities in an automated process flow; and constraining the autonomous scheduling to lessen queue time violations in the process flow. The apparatus includes a program storage medium encoded with instructions that, when executed by a computing device, performs such a method; a computing apparatus programmed to perform such a method, and an automated process flow implementing such a method.

Abstract: By incorporating an etch control material after the formation of a material layer to be patterned, an appropriate material having a highly distinctive radiation wavelength may be used for generating a distinctive endpoint detection signal during an etch process. Advantageously, the material may be incorporated by ion implantation which provides reduced non-uniformity compared to etch non-uniformities, while the implantation process provides the potential for introducing even very “exotic” implantation species. In some embodiments, the substrate-to-substrate uniformity of the patterning of dual damascene structures may be increased.

Abstract: Methods are provided for fabricating a stressed MOS device. One method comprises the steps of providing a substrate of a monocrystalline semiconductor material having a first lattice constant, and forming a conductive gate electrode overlying the substrate, the gate electrode having opposing sides and having a thickness. Sidewall spacers are formed on the opposing sides of the gate electrode and trenches are etched in the semiconductor substrate in alignment with the sidewall spacers. A portion of the thickness of the conductive gate electrode is also etched to leave a remaining portion of the conductive gate electrode. A stress inducing layer of material is grown on the remaining portion of the conductive gate electrode and filling the trenches, the stress inducing layer of material having a second lattice constant different than the first lattice constant.

Abstract: A method of manufacturing an integrated circuit (IC) utilizes a shallow trench isolation (STI) technique. The shallow trench isolation technique is used in strained silicon (SMOS) process. The strained material is formed after the trench is formed. The process can be utilized on a compound semiconductor layer above a box layer.

Abstract: A method and mechanism for performing shift operations using a shuffle unit. A processor includes a shuffle unit configured to perform shuffle operations responsive to shuffle instructions. The shuffle unit is adapted to support shift operations as well. In response to determining a shuffle instruction is received, selected bits of an immediate value of the shuffle instruction are used to generate byte selects for relocating bytes of a source operand. In response to determining the instruction is a shift instruction, the shuffle unit performs an arithmetic operation on a first and second value, where the first value corresponds to a particular destination byte position, and the second value corresponds to the immediate value. The result of the arithmetic operation comprises a byte select which selects one of the bytes of a source operand for conveyance to the particular destination byte position.

Abstract: A cooling device (1003) with a housing (1004) having an upper wall (1414b), lower wall (1414d), and two sidewalls, forming a duct with a cross-sectional area for allowing air flow from a first end (1411) to a second (1412), and an air drive disposed within the housing to draw air from the intake end and drive said air through the output end, the air drive comprising at least a first fan (1420a) of a first fan diameter and a second fan (1420b) of a second diameter, the first fan (1420a) and second fan (1420b) arranged to overlap within said housing (1004) such that a substantial portion of said duct cross-sectional area is covered. The cooling device (1003) may further comprise an inner duct (1424) for separating air flow between the first fan (1420a) and the second fan (1420b) through at least a portion of the housing (1004), and the first fan (1420a) and second fan (1420b) may be offset along the length of the duct.

Abstract: Methods, systems and program products are disclosed for performing a stress test of a line in an integrated circuit (IC) chip. One embodiment of the method includes: applying a constant current IS to the line; and stress testing the line while applying the constant current IS such that the constant current IS is not altered by a resistance change due to an onset of electromigration.

Abstract: The disclosed embodiments reduce across-chip performance variation through non-contact electrical metrology. According to a feature is a process control system that includes a component that measures transistor electrical performance in a product wafer. Also included in the system is a mapping component that converts the transistor performance into exposure dose values and a process tool that communicates the exposure dose value to a scanner. The exposure dose value is fed back for optimization of future chip exposures. The disclosed embodiments directly optimize transistor performance, thus controlling an important parameter in many integrated circuits.