Abstract: A delay line is periodically configured into a delay-locked loop for calibration purposes. That is, the delay line is operated in an open loop mode during a first time period in which a signal, such as an aperiodic signal, is the input signal into the delay line. Periodically, the delay line is configured into a delay-locked loop and the delay line is recalibrated based on a periodic signal supplied to the delay-locked loop.

Abstract: A method includes receiving a first memory access request from a first device during a first interval. The first memory access request is to access a first page of a multiple-page memory. The method further includes receiving a second memory access request from the first device during a second interval subsequent to the first interval and receiving a third memory access request from a second device during the second interval. The method additionally includes preferentially selecting the second memory access request over the third memory access request for provision to the multiple-page memory if an indicator indicates the second memory access request is expected to access the first page of the multiple-page memory.

Abstract: A method and an apparatus are provided for applying a self-adaptive filter to a drifting process. The method includes processing a workpiece, measuring an output characteristic of the processed workpiece and modifying a previous estimated process state based at least on the measured output characteristic. The method further includes estimating a next process state based at least on the modified previous estimated process state.

Abstract: A semiconductor device comprising a substrate having a first crystal orientation is provided. A first insulating layer overlies the substrate and a plurality of silicon layers overlie the first insulating layer. A first silicon layer comprises silicon having a second crystal orientation and a crystal plane. A second silicon layer comprises silicon having the second crystal orientation and a crystal plane that is substantially orthogonal to the crystal plane of the first silicon layer. Because holes have higher mobility in the (110) plane than the (100) plane, while electrons have higher mobility in (100) plane than the (110) plane, semiconductor device performance can be enhanced by the selection of silicon layers with certain crystal plane orientations. In addition, a method of forming a semiconductor device is provided.

Abstract: A method of manufacturing an integrated circuit (IC) utilizes a shallow trench isolation (STI) technique. The shallow trench isolation technique is used in strained silicon (SMOS) process. The liner for the trench is formed from a semiconductor or metal layer which is deposited in a low temperature process which reduces germanium outgassing. The low temperature process can be a CVD process.

Abstract: A method of fabricating a photomask having a pellicle on a photomask substrate that facilitates accurate measurement of a critical dimension on the photomask, without requiring removal of the pellicle from the photomask substrate. A first pattern is transferred onto the photomask substrate in a first area, and at least one test pattern is transferred onto the photomask substrate outside of the first area. The pellicle is attached to the photomask substrate, wherein the pellicle covers the first area, but does not cover the at least one test pattern.

Abstract: A method of adjusting a reticle layout to correct for flare can include determining a localized reticle pattern density across the reticle layout and determining a relationship between reticle pattern density and edge adjustment for the photolithography apparatus being used. For a given feature of the reticle layout, an edge of the feature can be adjusted by a given amount based on the localized reticle pattern density adjacent the given feature. This method allows for a rule-based optical proximity correction (OPC) approach to compensate for long-range and short-range flare within a photolithography apparatus.

Abstract: A system including a host coupled to a serially connected chain of memory modules. In one embodiment, each of the memory modules includes a memory control hub for controlling access to a plurality of memory chips on the memory module. The memory modules are coupled serially in a chain to the host via a plurality of memory links. Each memory link may include an uplink for conveying transactions toward the host and a downlink for conveying transactions originating at the host to a next memory module in the chain. The uplink and the downlink may convey transactions using packets that include control and configuration packets and memory access packets. The memory control hub may convey a transaction received on a first downlink of a first memory link on a second downlink of a second memory link independent of decoding the transaction.

Abstract: By performing a contingency-based correlation test of measurement data, such as defect data, with respect to electrical test data after progressively filtering the measurement data, an enhanced analysis of process flow characteristics may be accomplished. Consequently, an efficient yield loss estimation may be performed.

Abstract: By predoping of a layer of deposited semiconductor gate material by incorporating dopants during the deposition process, a high uniformity of the dopant distribution may be achieved in the gate electrodes of CMOS devices subsequently formed in the layer of gate material. The improved uniformity of the dopant distribution results in reduced gate depletion and reduced threshold voltage shift in the transistors of the CMOS devices.

Abstract: According to an illustrative embodiment disclosed herein, a semiconductor structure comprising a first crystalline substrate and a second crystalline substrate is provided. The semiconductor structure is irradiated with a radiation. Both the first crystalline substrate and the second crystalline substrate are exposed to the radiation. At least one diffraction pattern of a crystal lattice of the first crystalline substrate and a crystal lattice of the second crystalline substrate is measured. A relative orientation of the crystal lattice of the first crystalline substrate and the crystal lattice of the second crystalline substrate is determined from the at least one diffraction pattern.

Abstract: A device is provided for detecting delays of data due to over-temperature conditions, the device includes a first latch having a data input and a clock input and an output, and a first delay path including combinational logic, a first input coupled to the output of the first latch, and an output. The device further includes a second latch having a data input coupled to the output of the first delay path, a clock input coupled to the clock input of first latch, and an output, and a delay element having a data input coupled to the clock input of the first latch and an output. The device includes a third latch having a data input coupled to the output of the first delay path, a clock input coupled to the output of the delay element, and an output, and a comparator having a first input coupled to the output of the second latch, a second input coupled to the output of the third latch, and an output.

Abstract: Methods are provided for fabricating a stress enhanced MOS circuit. One method comprises the steps of depositing a stressed material overlying a semiconductor substrate and patterning the stressed material to form a stressed dummy gate electrode overlying a channel region in the semiconductor substrate so that the stressed dummy gate induces a stress in the channel region. Regions of the semiconductor substrate adjacent the channel are processed to maintain the stress to the channel region and the stressed dummy gate electrode is replaced with a permanent gate electrode.

Abstract: A method of manufacturing a semiconductor device includes providing a strained-silicon semiconductor layer over a silicon germanium layer, and partially removing a first portion of the strained-silicon layer. The strained-silicon layer includes the first portion and a second portion, and a thickness of the second portion is greater than a thickness of the first portion. Initially, the first and second portions of the strained-silicon layer initially can have the same thickness. A p-channel transistor is formed over the first portion, and a n-channel transistor is formed over the second portion. A semiconductor device is also disclosed.

Abstract: In one embodiment, a register in a processor is programmable with an intercept indication indicative of whether or not an event that would cause a transition by the processor to a first mode is to be intercepted during execution of a guest. Responsive to the intercept indication and further responsive to detecting the event, execution circuitry in the processor is configured to exit the guest. In another embodiment, a method comprises: detecting an event that would cause a processor to transition to a first mode, wherein first code is to be executed in the first mode; and causing the first code to be executed in a guest responsive to the detecting. In still another embodiment, a computer accessible medium comprising instructions which when executed in response to detecting the event, cause the first code to be executed in a guest.

Abstract: By using a non-metallic hard mask for patterning low-k dielectric materials of advanced semiconductor devices, an enhanced degree of etch fidelity is obtained. The present invention may readily be applied to via first-trench last, trench first-via last schemes.

Abstract: A WLAN (Wireless Local Area Network) transmitter or another data communications apparatus is provided that includes a transmission section that is configured to generate signals to be transmitted, and a control section that is connected to the transmission section to control the transmission section dependent on at least two transmission parameters. The control section comprises a state transition controller that is configured to step through a plurality of predefined control states. The control section is configured to apply different transmission parameter modification mechanisms in different control states. The state transition controller is configured to determine the respective next control states based on transmission success and failure statistics.

Abstract: A system for testing integrated circuit storage structures on a semiconductor wafer. A test IC manufactured on a semiconductor wafer includes a test storage structure such as a random access memory structure, for example, and an access controller including one or more clock sources. In various embodiments, the clock sources may include a ring oscillator and a pulse width generator. These clock sources may be programmable to provide a clock signal having a variety of frequencies for accessing the storage structure. In one embodiment, the frequencies provided by the access controller may be higher than a frequency that can be supplied to the wafer from ATE. In another embodiment, the pulse width generator may be programmable to provide a pulse train having a variety of duty cycles.

Abstract: By providing an additional silicon dioxide based etch stop layer, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. In another aspect, the etch selectivity of the contact structure may be increased by a modification of the etch behavior of the exposed portion of the contact etch stop layer.

Abstract: A method for reducing power consumption in an integrated circuit and an integrated circuit having a power reduction feature. The integrated circuit has at least two functional circuit blocks and two upper supply rails. A first upper supply rail is coupled to the first functional circuit block and a second upper supply rail is coupled to the second functional circuit block. A lower supply rail is coupled to the first and second functional circuit blocks. In an active mode of operation, a first source of operating potential is electrically coupled to the first upper supply rail and a second source of operating potential is electrically coupled to the second upper supply rail. In an idle mode of operation, the first upper supply rail remains electrically coupled to the first source of operating potential and the second source of operating potential is electrically decoupled from the second functional circuit block.