Abstract: Disclosed are photolithographic systems and methods, and more particularly systems and methodologies that enhance imprint mask feature resolution. An aspect generates feedback information that facilitates control of imprint mask feature size and resolution via employing a scatterometry system to detect resolution enhancement need, and decreasing imprint mask feature size and increasing resolution of the imprint mask via a trim etch procedure.

Abstract: A method of forming a plurality of contact holes of varying pitch and density in a contact layer of an integrated circuit device is provided. The plurality of contact holes can include a plurality of regularly spaced contact holes having a first pitch along a first direction and a plurality of semi-isolated contact holes having a second pitch along a second direction. A double-dipole illumination source can transmit light energy through a mask having a pattern corresponding to a desired contact hole pattern. The double-dipole illumination source can include a first dipole aperture, which is oriented and optimized for patterning the regularly spaced contact holes, and a second dipole aperture, which is oriented substantially orthogonal to the first dipole aperture and optimized for patterning the plurality of semi-isolated contact holes. The contact layer can be etched using the patterned photoresist layer.

Abstract: By reducing the effect of particle bombardment during the sequence for forming a metal silicide in semiconductor devices, the defect rate and the metal silicide uniformity may be enhanced. For this purpose, the metal may be deposited without an immediately preceding sputter etch process, wherein, in a particular embodiment, an additional oxidation process is performed to efficiently remove any silicon contaminations and surface impurities by a subsequent wet chemical treatment on the basis of HF, which is followed by the metal deposition.

Abstract: A WLAN (Wireless Local Area Network) communication device including a first buffer, a second buffer and a shared backoff generator and corresponding methods and integrated circuit chips provided. The first buffer is for queuing first data packets to be transmitted by the WLAN communication device after a transmission channel has been idle for at least a first backoff time. The second buffer is for queuing second data packets to be transmitted by the WLAN communication device after the transmission channel has been idle for at least a second backoff time. The shared backoff generator is adapted to generate a first and a second backoff start value used to determine the first and second backoff times, respectively. Embodiments may reduce the hardware consumption and thus manufacturing and product costs.

Abstract: A system apparatus and method for providing access security for a subject device. The apparatus includes a security check unit (SCU) configured to be coupled to a transmission medium. The SCU is configured to monitor signals on the transmission medium and to detect an attempt by a first device coupled to the transmission medium to access a second device coupled to the transmission medium based upon the signals. The SCU is also configured to determine an identity of the first device based upon the signals and to control access to the second device by the first device dependent upon the identity of the first device. The method includes monitoring signals and detecting an attempt by an additional device to access the subject device based upon the signals. The method also includes using the signals to determine an identity of the additional device and controlling access to the subject device dependent upon the identity of the additional device.

Abstract: Disclosed are immersion lithography methods involving irradiating a first photoresist through a lens and an immersion liquid, the immersion liquid contacting the lens and the first photoresist in a first apparatus; contacting the lens with a supercritical fluid in a second apparatus; and irradiating a second photoresist through the lens and an immersion liquid, the immersion liquid contacting the lens and the second photoresist in the first apparatus.

Abstract: A Viterbi decoder is configured for subtracting each survivor metric for each corresponding encoder state by a prescribed subtraction operator based on a prescribed event. The subtraction of each survivor metric by a prescribed subtraction operator based on a prescribed event minimizes memory requirements in the accumulated metric table by limiting the survivor metric values to a identifiable range. Hence, the Viterbi decoder can be implemented in an economical manner with reduced memory requirements.

Abstract: In one embodiment, a node comprises a plurality of processor cores and a node controller configured to receive a first read operation addressing a first register. The node controller is configured to return a first value in response to the first read operation, dependent on which processor core transmitted the first read operation. In another embodiment, the node comprises the processor cores and the node controller. The node controller comprises a queue shared by the processor cores. The processor cores are configured to transmit communications at a maximum rate of one every N clock cycles, where N is an integer equal to a number of the processor cores. In still another embodiment, a node comprises the processor cores and a plurality of fuses shared by the processor cores. In some embodiments, the node components are integrated onto a single integrated circuit chip (e.g. a chip multiprocessor).

Abstract: By patterning a spacer layer stack and etching a cavity in an in situ etch process, the process complexity, as well as the uniformity, during the formation of embedded strained semiconductor layers may be significantly enhanced. In an initial phase, the spacer layer stack may be patterned on the basis of an anisotropic etch step with a high degree of uniformity, since a selectivity between individual stack layers may not be necessary. Thereafter, a cleaning process may be performed followed by a cavity etch process, wherein a reduced over-etch time during the spacer patterning process significantly contributes to the uniformity of the finally obtained cavities, while the in situ nature of the process also provides a reduced overall process time.

Abstract: A semiconductor structure comprises a transistor element formed in a substrate. A stressed layer is formed over the transistor element. The stressed layer has a predetermined tensile intrinsic stress of about 900 MPa or more. Due to this high intrinsic stress, the stressed layer exerts considerable elastic forces to the channel region of the transistor element. Thus, tensile stress is created in the channel region. The tensile stress leads to an increase of the electron mobility in the channel region.

Abstract: A silicon nitride layer having a silicon-rich sub-layer and a standard sub-layer is formed on a copper surface to obtain excellent electromigration characteristics due to the standard sub-layer that is in contact with the copper, while maintaining a superior diffusion barrier behavior due to the silicon-rich sub-layer. By combining these sub-layers, the overall thickness of the silicon nitride layer may be kept small compared to conventional silicon nitride barrier layers, thereby reducing the capacitive coupling of adjacent copper lines.

Abstract: By direct bonding of two crystalline semiconductor layers of different crystallographic orientation and/or material composition and/or internal strain, bulk-like hybrid substrates may be formed, thereby providing the potential for forming semiconductor devices in accordance with a single transistor architecture on the hybrid substrate.

Abstract: A communications system includes a physical layer hardware unit and a processing unit. The physical layer hardware unit is adapted to communicate data over a communications channel in accordance with assigned transmission parameters. The physical layer hardware unit is adapted to receive an incoming signal over the communications channel and sample the incoming signal to generate a digital received signal. The processing unit is adapted to execute a software driver including program instructions adapted to extract control codes from the digital received signal, generate an authentication code, and transfer the control codes and the authentication code to the physical layer hardware unit. The physical layer hardware unit is adapted to signal a security violation in response to the control codes being inconsistent with the authentication code.

Abstract: A method for manufacturing a memory device having a metal nanocrystal charge storage structure. A substrate is provided and a first layer of dielectric material is grown on the substrate. A layer of metal oxide having a first heat of formation is formed on the first layer of dielectric material. A metal layer having a second heat of formation is formed on the metal oxide layer. The second heat of formation is greater than the first heat of formation. The metal oxide layer and the metal layer are annealed which causes the metal layer to reduce the metal oxide layer to metallic form, which then agglomerates to form metal islands. The metal layer becomes oxidized thereby embedding the metal islands within an oxide layer to form a nanocrystal layer. A control oxide is formed over the nanocrystal layer and a gate electrode is formed on the control oxide.

Abstract: Systems and methods are disclosed for testing semiconductors at the wafer level, specifically, systems and methods are disclosed that quantify line-edge roughness in terms of electrical properties and the impact of the line-edge roughness on device reliability and performance. A voltage ramp dielectric breakdown (VRDB) test is used to measure the breakdown voltage of the inter-digitated fingers of a semiconductor device. The distribution of breakdown voltage is used to measure the median breakdown voltage and the outliers which fan the extrinsic tail. Thereby, VRDB is used to quantify the impact LER will have on device reliability and performance. The systems and methods also provide a feedback tool to the fabrication process to control line edge roughness to a desired specification.

Abstract: In a method according to the present invention, a substrate thinning process is performed on a bumped substrate prior to the ultimate solder reflow process to heal bump defects caused by the substrate thinning process. Concurrently, the risk of substrate breakage is reduced compared to the prior art process since the number of process steps, requiring handling of thinned substrates, is reduced.

Abstract: The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that modify an imprint mask. An aspect of the invention generates feedback information that facilitates control of imprint mask feature height via employing a scatterometry system to detect topography variation and, decreasing imprint mask feature height in order to compensate for topography variation.

Abstract: By improving the purity of metal lines and the crystalline structure, the overall performance of metal lines, especially of highly scaled copper-based semiconductor devices, may be enhanced. The modification of the crystalline structure of the metal lines may be performed by a heat treatment generating locally restricted heating zones, which are scanned along the length direction of the metal lines, and/or a heat treatment comprising a heating step in a vacuum ambient followed by a heating step in a reducing ambient.

Abstract: For routing points to a center point, the points are grouped into a respective set disposed within each quadrant. Each point is Manhattan routed to any other point having a minimum Manhattan distance within a rectangle defined by each point and the center point, to result in at least one initial end point in each quadrant having at least one of the points. The at least one initial end point is Manhattan routed together to result in a respective final end point in each quadrant having at least one of the points. The respective final end points are routed to the center point with minimized routing distance.

Abstract: A method and apparatus for filtering memory probe activity for writes in a distributed shared memory computer. In one embodiment, the method may include assigning an uncached directory state to a cache data block in response to evicting the cache data block. In another embodiment, the method may include assigning a remote directory state to a cache data block in response to evicting the cache data block and storing it in a remote cache. In a third embodiment, the method may include assigning a pairwise-shared directory state in response to a second processor node initiating a load operation to a cache data block in a modified cache state in a first processor node. In a fourth embodiment, the method may include assigning a migratory directory state in response to a processor node initiating a store operation to a cache data block in a pairwise-shared cache state.