Abstract: A teleradiology processing system comprises a central reading station having a plurality of computer work areas, a plurality of transcriptionist stations each having a transcriptionist computer and a shared audio communication channel that facilitates audio communication between the central reading station and each of the transcriptionist stations. A database stores a plurality of medical case files, where the database is accessible by each of the plurality of transcriptionist computers. In operation, each transcriptionist computer takes control of a uniquely assigned one of the plurality of computer work areas of the central reading station to provide information from a pre-fetched medical case. Moreover, each transcriptionist computer prepares a report based upon a received code transmitted to the corresponding transcriptionist station over the shared audio communication channel. Each report, once approved by the specialist at the central reading station, is written to the database.

Abstract: The invention relates to a fiber-metal laminate comprising mutually bonded fiber-reinforced composite layers and metal sheets, wherein the fiber and metal properties satisfy the following relationships simultaneously: (1) ?fibre tension>Ksf*?tu/(1.5*Et metal), (2) Efibre tension>Kstiff*Et metal, (3) ?fibre compression>ksf*?tu/(1.5*Klf*Et metal) wherein the strain concentration factor Ksf, stiffness factor Kstiff and the load factor Klf satisfy (4) 2.75?Ksf<5.7, (5) Kstiff?1.28, (6) 1.5?Klf?3.5 and ?tu=ultimate tensile strength of the metal, Et metal=tensile Young's modulus of the metal, ?fibre tension=elastic tensile strain of the fiber, Efibre tension=tensile elastic modulus of the fibre, ?fibre compression=elastic compression strain of the fiber. The fiber-metal laminate according to the invention shows an unprecedented combination of toughness and tensile strength.

Abstract: An aqueous cationic polyurethane dispersion for waterborne digital print and other applications comprising an aqueous dispersion of polyurethane having properly positioned tertiary amino groups, e.g., tethered tertiary amino group separated from backbone by at least two intervening atoms or terminal tertiary amino groups with multiple tertiary amino groups per terminus, where said amino groups are optionally partially quaternized and/or neutralized.

Abstract: In one embodiment, a stimulation lead for applying electrical pulses to tissue of a patient, the stimulation lead comprises: a plurality of electrodes on a first end of the lead body; a plurality of terminals on a second end of the lead body; a lead body comprising a flex film component disposed within insulative material, wherein (i) the flex film component comprises a plurality of electrical traces, (ii) the plurality of electrical traces electrically couple the plurality of electrodes with the plurality of terminals, and (iii) the flex film component comprises a plurality of bends along a substantial length of the lead body; wherein the stimulation lead is adapted to elastically elongate under application of stretching forces to the lead body without disconnection of the electrical connections between the plurality of electrodes and the plurality of terminals through the electrical traces of the flex film component.

Abstract: The present invention aims to provide an industrially advantageous method of producing a pseudopolyrotaxane with a high inclusion ratio. The present invention relates to a method for producing a pseudopolyrotaxane, including: an inclusion step of mixing a polyethylene glycol and a cyclodextrin in an aqueous medium to form an aqueous dispersion of pseudopolyrotaxane that contains pseudopolyrotaxane particles in which the polyethylene glycol is included in the cavities of the cyclodextrin molecules in a skewered manner; and a drying step of drying the aqueous dispersion of pseudopolyrotaxane produced in the inclusion step to obtain the pseudopolyrotaxane. In the drying step, the aqueous dispersion of pseudopolyrotaxane is dried in a thin film state.

Abstract: On a typical motherboard the processor and memory are separated by a printed circuit data bus that traverses the motherboard. Throughput, or data transfer rate, on the data bus is much lower than the rate at which a modern processor can operate. The difference between the data bus throughput and the processor speed significantly limits the effective processing speed of the computer when the processor is required to process large amounts of data stored in the memory. The processor is forced to wait for data to be transferred to or from the memory, leaving the processor under-utilized. The delays are compounded in a distributed computing system including a number of computers operating in parallel. The present disclosure describes systems, method and apparatus that tend to alleviate delays so that memory access bottlenecks are not compounded within distributed computing systems.

Abstract: An exemplary light emitting diode includes a first type semiconductor layer, a second type semiconductor layer, and a multi quantum well layer sandwiched between the first and second type semiconductor layers. The multi quantum well layer includes a first barrier layer, a second barrier layer, two well layers sandwiched between the first and second barrier layers, and a third barrier layer sandwiched between the two well layers. The first and second barrier layers each have an energy level of conduction band higher than that of the third barrier layer. The first and second barrier layers each have an energy level of valence band higher than that of the third barrier layer.

Abstract: Disclosed is a flexible circuit cable with at least two bundled wire groups. The circuit cable has first and second ends respectively connected to first and second connection sections. The circuit cable includes a cluster section, which is formed of a plurality of cluster wires formed by slitting the circuit cable, in an extension direction of the cable, at a predetermined cut width. The cluster section includes at least two independent bundles, which are formed by dividing the cluster wires of the circuit cable into different signal groups according to electrical signals transmitted therethrough. Bundling members are used to the cluster wires of the independent bundles according to predetermined bundling modes. Further, the circuit cable has a surface forming a shielding conductive layer for electromagnetic interference protection and impedance control for internal signals of the circuit cable.

Abstract: A step-up switching voltage regulator includes two or more inductors and a switching network. A control circuit drives the switching network in a repeating sequence that includes: a magnetizing phase where the inductors are connected in series between an input voltage and ground; and a charge transfer phase where the inductors are connected in parallel to provide current to an output node with at least one of the inductors is connected between ground and the output node.

Abstract: A filter element disclosed herein includes a center tube defining a central reservoir and including an interior sidewall. The filter element further includes an end plate and a pocket defining a port extending from the end plate into the central reservoir. The pocket includes an inner wall, an outer wall, and a plurality of projections extending from the outer wall of the pocket toward the interior sidewall of the center tube.

Abstract: Provided is a semiconductor device that includes a substrate, a first buffer region formed over the substrate, a second buffer region formed on the first buffer region, an active layer formed on the second buffer region, and at least two electrodes formed on the active layer. The first buffer region includes at least one composite layer in which a first semiconductor layer and a second semiconductor layer are sequentially stacked. The second buffer region in includes at least one composite layer in which a third semiconductor layer, a fourth semiconductor layer, and a fifth semiconductor layer are sequentially stacked. The fourth lattice constant has a value between the third lattice constant and the fifth lattice constant.

Abstract: A GaN-based semiconductor is epitaxially grown on a silicon substrate with a surface orientation of (111). The difference between the lattice constant of the GaN and the silicon (111) surface is approximately 17%, which is quite large. Therefore, the dislocation density of the grown GaN exceeds 1010 cm?2. Screw dislocation density causes the leak current of the transistor using GaN to increases. Furthermore, the mobility of the transistor is reduced. Provided is a semiconductor substrate comprising a silicon substrate and a nitride semiconductor layer that is epitaxially grown on a (150) surface of the silicon substrate.

Abstract: The present invention relates to flame retardant thermoplastic polyurethane (TPU) compositions that are prepared by compounding certain TPU's and with a polyphosphonate homopolymer or copolymer, and more specifically TPU compositions that pass ASTM E84 Class 1 and UL94 V0 ratings. The invention also relates to compositions that further include an inherently dissipative polymer to provide a TPU composition that has flame retardant properties, electrostatic discharge performance, good clarity and/or transparency, or any combination thereof.

Abstract: A multi-frequency antenna includes a first antenna element, a second antenna element, a connection element, a third antenna element and a shorted element. The connection element is connected between the first antenna element and a neighborhood portion of the third antenna element. A feeding point is located in or nearby a first junction between the connection element and the first antenna element or located in the connection element. The shorted element is connected between the second antenna element and the grounding plane. The shorted element extends from a second junction between the second antenna element and the third antenna element to the grounding plane. The first conductive path that extends from the feeding point to the other end of the shorted element is substantially equal to a second conductive length that extends from the feeding point to the free end of the first antenna element.

Abstract: The present invention relates to processes for recovering butanol produced in a fermentative process using, for example, an ethanol production plant which has been reversibly-retrofitted for butanol production, that is, the ethanol production plant may be converted for butanol production, but can also revert to an ethanol production. The present invention also relates to processes for recovering butanol produced in a fermentative process in a butanol production plant that may be converted to ethanol production plant.

Abstract: A cache system includes plurality of first caches at a first level of a cache hierarchy and a second cache at a second level of the cache hierarchy which is lower than the first level of cache hierarchy coupled to each of the plurality of first caches. The second cache enforces a cache line replacement policy in which the second cache selects a cache line for replacement based in part on whether the cache line is present in any of the plurality of first caches and in part on another factor.

Abstract: [Problem to be Solved] A static-electricity electrification measurement method and apparatus that satisfy, at the same time, three conditions: (1) to measure static-electricity electrification non-destructively, (2) to reduce environmental influence of a measured object wherein metals and insulators are mixed to measure the static-electricity electrification, and (3) to measure the static-electricity electrification without getting close thereto is provided. [Solution] A static-electricity electrification measurement method of the present invention includes: an adding step of adding vibrations having a vibration frequency and an amplitude selected in advance to a measured object; an intensity measuring step of measuring intensity of electromagnetic waves generated along with the vibrations of the measured object; and a state measuring step of measuring a static-electricity electrification state of the measured object based on intensity of the electromagnetic waves measured in the measuring step.

Abstract: Provided is a semiconductor device that has a buffer layer with which a dislocation density is decreased. The semiconductor device includes a substrate, a buffer region formed over the substrate, an active layer formed on the buffer region, and at least two electrodes formed on the active layer. The buffer region includes at least one composite layer in which a first semiconductor layer having a first lattice constant, a second semiconductor layer having a second lattice constant that is different from the first lattice constant and formed in contact with the first semiconductor layer, and a third semiconductor layer having a third lattice constant that is between the first lattice constant and the second lattice constant are sequentially laminated.

Abstract: A nitride semiconductor device includes a substrate, an electron transit layer and an electron supply layer that are sequentially formed above the substrate, where the electron supply layer has a different band gap energy than the electron transit layer, a drain electrode, a gate electrode, and a source electrode that is formed on the opposite side of the drain electrode with the gate electrode being sandwiched between the drain electrode and the source electrode. Here, a plurality of lower concentration regions are formed so as to be spaced away from each other on the surface of the electron transit layer between the gate electrode and the drain electrode. In the lower concentration regions, the concentration of a two-dimensional electron gas is lower than in other regions.

Abstract: Provided is a method of manufacturing a gallium-nitride-based semiconductor device, comprising forming a first semiconductor layer of a gallium-nitride-based semiconductor; and forming a recessed portion by dry etching a portion of the first semiconductor layer via a microwave plasma process using a bromine-based gas.