Patents Assigned to Applied Material
  • Publication number: 20230059788
    Abstract: Exemplary methods of semiconductor processing may include etching one or more features partially through a dielectric material to expose material from one or more layer pairs formed on a substrate. The methods may include halting the etching prior to penetrating fully through the dielectric material, and prior to exposing material from all layer pairs formed on the substrate. The methods may include forming a layer of carbon-containing material on the exposed material from each of the one or more layer pairs having exposed material. The methods may include etching the one or more features fully through the dielectric material to expose material for each remaining layer pair formed on the substrate.
    Type: Application
    Filed: August 20, 2021
    Publication date: February 23, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Bhaskar Jyoti Bhuyan, Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallick
  • Patent number: 11586794
    Abstract: Embodiments disclosed herein include a semiconductor manufacturing tool with a hybrid model and methods of using the hybrid model for processing wafers and/or developing process recipes. In an embodiment, a method for developing a semiconductor manufacturing process recipe comprises selecting one or more device outcomes, and querying a hybrid model to obtain a process recipe recommendation suitable for obtaining the device outcomes. In an embodiment, the hybrid process model comprises a statistical model and a physical model. In an embodiment, the method may further comprise executing a design of experiment (DoE) on a set of wafers to validate the process recipe recommended by the hybrid process model.
    Type: Grant
    Filed: July 30, 2020
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Stephen Moffatt, Sheldon R. Normand, Dermot P. Cantwell
  • Patent number: 11586160
    Abstract: Methods and systems for reducing substrate particle scratching using machine learning are provided. A machine learning model is trained to predict process recipe settings for a substrate temperature control process to be performed for a current substrate at a manufacturing system. First training data and second training data are generated for the machine learning model. The first training data includes historical data associated with prior process recipe settings for a prior substrate temperature control process performed for a prior substrate at a prior process chamber. The second training data is associated with a historical scratch profile of one or more surfaces of the prior substrate after performance of the prior substrate temperature control process according to the prior process recipe settings.
    Type: Grant
    Filed: June 28, 2021
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Kartik B Shah, Satish Radhakrishnan, Karthik Ramanathan, Karthikeyan Balaraman, Adolph Miller Allen, Xinyuan Chong, Mitrabhanu Sahu, Wenjing Xu, Michael Sterling Jackson, Weize Hu, Feng Chen
  • Patent number: 11589474
    Abstract: A diagnostic disc includes a disc-shaped body having raised walls that encircle the interior of the disc-shaped body and at least one protrusion extending outwardly from the disc-shaped body. The raised walls of the disc-shaped body define a cavity of the disc-shaped body. A non-contact sensor is attached to each of the at least one protrusion. A printed circuit board (PCB) is positioned within the cavity formed on the disc-shaped body. A vacuum and high temperature tolerant power source is disposed on the PCB along with a wireless charger and circuitry that is coupled to each non-contact sensor and includes at least a wireless communication circuit and a memory. A cover is positioned over the cavity of the disc-shaped body and shields at least a portion of the PCB, circuitry, power source, and wireless charger within the cavity from an external environment.
    Type: Grant
    Filed: June 2, 2020
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Phillip A. Criminale, Zhiqiang Guo, Philip A. Kraus, Andrew Myles, Martin Perez-Guzman
  • Patent number: 11587796
    Abstract: Memory devices and methods of manufacturing memory devices are provided. The device and methods described suppress oxidation of metal layers exposed to ambient oxygen. After an opening is formed, a nitridation process occurs to nitridate the surface of the exposed metal layer inside the opening. The nitridated region formed on the surface of metal layer inside the opening works as a barrier layer for oxygen diffusion. In addition, the nitridated region works as an electrode for charge trap memory cells.
    Type: Grant
    Filed: January 13, 2021
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Chang Seok Kang, Tomohiko Kitajima, Sung-Kwan Kang
  • Patent number: 11587817
    Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include a heater embedded within the electrostatic chuck body. The substrate support assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The first bipolar electrode may include at least two separated mesh sections, with each mesh section characterized by a circular sector shape. The substrate support assemblies may include a second bipolar electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The second bipolar electrode may include a continuous mesh extending through the at least two separated mesh sections of the first bipolar electrode.
    Type: Grant
    Filed: October 21, 2020
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Jian Li, Zheng J. Ye, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez
  • Patent number: 11587873
    Abstract: Described are microelectronic devices comprising a dielectric layer formed on a substrate, a feature comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming a microelectronic device comprising the two metal liner film on the barrier layer.
    Type: Grant
    Filed: June 23, 2020
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Gang Shen, Feng Chen, Yizhak Sabba, Tae Hong Ha, Xianmin Tang, Zhiyuan Wu, Wenjing Xu
  • Patent number: 11587764
    Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film. In one embodiment, a plurality of retaining brackets is disposed in a rotational magnetic housing of the magnetic housing systems. Each retaining bracket of the plurality of retaining brackets is disposed in the rotational magnetic housing with a distance d between each retaining bracket. The plurality of retaining brackets has a plurality of magnets removably disposed therein. The plurality of magnets is configured to travel in a circular path when the rotational magnetic housing is rotated around the round central opening.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Srinivas Gandikota, Tza-Jing Gung, Samuel E. Gottheim, Timothy Joseph Franklin, Pramit Manna, Eswaranand Venkatasubramanian, Edward Haywood, Stephen C. Garner, Adam Fischbach
  • Patent number: 11584994
    Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Sarah Michelle Bobek, Venkata Sharat Chandra Parimi, Prashant Kumar Kulshreshtha, Vinay K. Prabhakar, Kwangduk Douglas Lee, Sungwon Ha, Jian Li
  • Patent number: 11587778
    Abstract: Provided herein are approaches for performing electrodynamic mass analysis with a radio frequency (RF) biased ion source to reduce ion beam energy spread. In some embodiments, a system may include an ion source including a power supply, the ion source operable to generate a plasma within a chamber housing, and an extraction power assembly including a first power supply and a second power supply electrically coupled with the chamber housing of the ion source, wherein the first power supply and the second power supply are operable to bias the chamber housing of the ion source with a time modulated voltage to extract an ion beam from the ion source. The system may further include an electrodynamic mass analysis (EDMA) assembly operable to receive the ion beam and perform mass analysis on the ion beam.
    Type: Grant
    Filed: November 3, 2020
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Alexandre Likhanskii, Joseph C. Olson, Frank Sinclair, Peter F. Kurunczi
  • Patent number: 11587766
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Grant
    Filed: June 21, 2021
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Patent number: 11585009
    Abstract: Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.
    Type: Grant
    Filed: January 24, 2022
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Paul R. McHugh, Gregory J. Wilson
  • Patent number: 11585764
    Abstract: Methods and systems for multi-level RF pulse monitoring and RF pulsing parameter optimization at a manufacturing system are provided. A radio frequency (RF) signal is pulsed within a processing chamber in accordance with a set of RF pulsing parameters. Sensor data is received from one or more sensors that indicates a multi-level RF pulse waveform detected within the processing chamber based on the RF signal pulsing. One or more peaks are identified in the detected multi-level RF pulse waveform. Each identified peak corresponds to at least one RF signal pulse of the RF signal pulsing within the processing chamber. A determination is made, based on the identified one or more peaks, whether the detected multi-level RF pulse waveform corresponds to the target multi-level RF pulse waveform. An indication of whether the detected multi-level RF pulse waveform corresponds to the target multi-level RF pulse waveform is provided to a client device.
    Type: Grant
    Filed: December 9, 2021
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Dermot Cantwell, Quentin Ernie Walker, Serghei Malkov, Jatinder Kumar
  • Patent number: 11586067
    Abstract: Processing methods may be performed to form a pixel material in a semiconductor substrate. The methods may include forming a lithographic mask overlying the semiconductor substrate. The lithographic mask may include a window. The method may include forming a via in the semiconductor substrate by a dry etch process through the window. The method may also include forming the pixel material by depositing a fill material in the via.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Lan Yu, Benjamin D. Briggs, Tyler Sherwood, Raghav Sreenivasan
  • Patent number: 11587936
    Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.
    Type: Grant
    Filed: June 1, 2021
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Yixiong Yang, Jacqueline S. Wrench, Yong Yang, Srinivas Gandikota, Annamalai Lakshmanan, Joung Joo Lee, Feihu Wang, Seshadri Ganguli
  • Patent number: 11587765
    Abstract: A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers may include accessing input parameters for a processing chamber that are derived from a recipe to perform a process on a substrate. The input parameters may be provided to a model that has been trained using previous input parameters and corresponding sensor measurements for the chamber. A predicted amount of reflected RF power may be received from the model and it may be determined whether the predicted reflected RF power is optimized. The input parameters may be repeatedly adjusted and processed by the model until input parameter values are found that optimize the reflected RF power. Optimized input parameters may then be provided to the chamber to process the substrate.
    Type: Grant
    Filed: November 22, 2020
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Soonwook Jung, Kenneth D. Schatz
  • Patent number: 11587789
    Abstract: The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume being in fluid communication with a plasma source. The substrate can include a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method can also include forming an oxide cap layer over a silicon-containing layer of the channel structure and exposing the oxide cap layer to a hydrogen-or-deuterium radical to nucleate the silicon-containing layer of the channel structures of the substrate. Forming the oxide cap layer and exposing the channel structure with the hydrogen radical occurs in the first processing chamber to form a nucleated substrate. The method can also include positioning the nucleated substrate in a second processing chamber with a second processing volume and heating the nucleated substrate in the second processing chamber.
    Type: Grant
    Filed: December 16, 2020
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Xinming Zhang, Abhilash J. Mayur, Shashank Sharma, Norman L. Tam, Matthew Spuller, Zeqiong Zhao
  • Patent number: 11586573
    Abstract: A system includes a programmable logic control (PLC) module, an input/output (IO) network bus coupled to the PLC module and provided at facets of a mainframe. A first process chamber attached to a first facet of the facets. A chamber interface IO sub-module is attached to the first facet and coupled to the IO network bus and to a process chamber IO controller of the first process chamber. The chamber interface IO sub-module is to: convert interlock relay signals, received via dry contact exchange with the process chamber IO controller, to digital signals; combine the digital signals into network packets adapted for communication using a protocol of the IO network bus; and transmit the network packets to the PLC module over the IO network bus.
    Type: Grant
    Filed: March 4, 2021
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: James Robert Reed, Kiyki-Shiy N. Shang, Martin A. Jolivet
  • Patent number: 11587773
    Abstract: A substrate pedestal includes a thermally conductive substrate support including a mesh, a thermally conductive shaft including a plurality of conductive rods therein, each conductive rod having a first end and a second end, and a sensor. The first end of each conductive rod is electrically coupled to the mesh, and the sensor is disposed between the first and second ends of each conductive rod and configured to detect current flow through each conductive rod.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Viren Kalsekar, Vinay K. Prabhakar, Venkata Sharat Chandra Parimi
  • Patent number: 11587771
    Abstract: A chamber component comprises a body and a plasma sprayed ceramic coating on the body. The plasma sprayed ceramic coating is applied using a method that includes feeding powder comprising a yttrium oxide containing solid solution into a plasma spraying system, wherein the powder comprises a majority of donut-shaped particles, each of the donut-shaped particles having a spherical body with indentations on opposite sides of the spherical body. The method further includes plasma spray coating the body to apply a ceramic coating onto the body, wherein the ceramic coating comprises the yttrium oxide containing solid solution, wherein the donut-shaped particles cause the ceramic coating to have an improved morphology and a decreased porosity as compared to powder particles of other shapes, wherein the improved surface morphology comprises a reduced amount of surface nodules.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Jennifer Y. Sun, Biraja P. Kanungo, Dmitry Lubomirsky