Patents Assigned to Applied Material
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Publication number: 20230071366Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The processing region may be at least partially defined between a faceplate and a substrate support on which the semiconductor substrate is seated. A bias power may be applied to the substrate support from a bias power source. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.Type: ApplicationFiled: September 8, 2021Publication date: March 9, 2023Applicant: Applied Materials, Inc.Inventors: Bhargav S. Citla, Soham Asrani, Joshua Rubnitz, Srinivas D. Nemani, Ellie Y. Yieh
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Publication number: 20230076170Abstract: Metrology slot plates, processing chamber lids and processing chambers having metrology slot plates are described. Each of the metrology slot plates independently comprises one or more of a plate blank, a reflectometer, a capacitance sensor, a gas flow meter, a manometer, a pyrometer, a distance sensor (laser) or an emissometer.Type: ApplicationFiled: September 3, 2021Publication date: March 9, 2023Applicant: Applied Materials, Inc.Inventors: Kenneth Brian Doering, Vivek B. Shah, Ashutosh Agarwal, Sanjeev Baluja, Shrihari Sampathkumar, Chunlei Zhang
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Publication number: 20230070489Abstract: Described are microelectronic devices and methods for forming interconnections in microelectronic devices. Embodiments of microelectronic devices include tantalum-containing barrier films comprising an alloy of tantalum and a metal dopant selected from the group consisting of ruthenium (Ru), osmium (Os), palladium (Pd), platinum (Pt), and iridium (Ir).Type: ApplicationFiled: June 21, 2022Publication date: March 9, 2023Applicant: Applied Materials, Inc.Inventors: Michael Haverty, Lu Chen, Muthukumar Kaliappan
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Patent number: 11600476Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.Type: GrantFiled: October 18, 2021Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Anantha K. Subramani, Deepak Jadhav, Ashish Goel, Hanbing Wu, Prashanth Kothnur, Chi Hong Ching
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Patent number: 11600468Abstract: Embodiments described herein relate to gas line systems with a multichannel splitter spool. In these embodiments, the gas line systems will include a first gas line that is configured to supply a first gas. The first gas line is coupled to a multichannel splitter spool with a plurality of second gas lines into which the first gas flows. Each gas line of the plurality of second gas lines will have a smaller volume than the volume of the first gas line. The smaller second gas lines will be wrapped by a heater jacket. Due to the smaller volume of the second gas lines, when the first gas is flowed through the second gas lines, the heater jacket will sufficiently heat the first gas, eliminating the condensation induced particle defects that occur in conventional gas line systems when the first gas meets with a second gas in the gas line system.Type: GrantFiled: January 21, 2020Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Madhu Santosh Kumar Mutyala, Sanjay G. Kamath, Deenesh Padhi, Arkajit Roy Barman
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Patent number: 11600473Abstract: An ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By applying a more positive voltage to the extraction plate, more efficient ion source operation with higher plasma density can be achieved. In this mode the plasma potential is increased, and the electrostatic sheath reduces losses of electrons to the chamber walls. By applying a more negative voltage, an ion rich sheath adjacent to the extraction aperture can be created. In this mode, conditioning and cleaning of the extraction plate is achieved via ion bombardment. Further, in certain embodiments, the voltage applied to the extraction plate can be pulsed to allow ion extraction and cleaning to occur simultaneously.Type: GrantFiled: January 15, 2021Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Svetlana B. Radovanov, Bon-Woong Koo, Alexandre Likhanskii
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Patent number: 11600761Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.Type: GrantFiled: February 17, 2021Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
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Patent number: 11597052Abstract: A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad.Type: GrantFiled: June 21, 2019Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Hari Soundararajan, Shou-Sung Chang, Haosheng Wu, Jianshe Tang, Jeonghoon Oh, Rajeev Bajaj, Andrew Siordia
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Patent number: 11598633Abstract: Analyzing a buried layer on a sample includes milling a spot on the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along a sidewall of the spot. From a first perspective a first distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. From a second perspective a second distance is measured between the first point on the sidewall corresponding to the upper surface of the buried layer and the second point on the sidewall corresponding to the lower surface of the buried layer. A thickness of the buried layer is determined using the first distance and the second distance.Type: GrantFiled: July 19, 2021Date of Patent: March 7, 2023Assignee: Applied Materials Israel Ltd.Inventors: Alexander Mairov, Gal Bruner, Yehuda Zur
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Patent number: 11597054Abstract: A method of fabricating an object using an additive manufacturing system includes receiving data indicative of a desired shape of the object to be fabricated by droplet ejection. The desired shape defines a profile including a top surface and one or more recesses. Data indicative of a pattern of dispensing feed material is generated to at least partially compensate for distortions of the profile caused by the additive manufacturing system, and a plurality of layers of the feed material are dispensed by droplet ejection in accordance to the pattern.Type: GrantFiled: September 17, 2021Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Mayu Felicia Yamamura, Jason Garcheung Fung, Daniel Redfield, Rajeev Bajaj, Hou T. Ng
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Patent number: 11598000Abstract: Methods of removing native oxide layers and depositing dielectric layers having a controlled number of active sites on MEMS devices for biological applications are disclosed. In one aspect, a method includes removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands in vapor phase to volatize the native oxide layer and then thermally desorbing or otherwise etching the volatized native oxide layer. In another aspect, a method includes depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate. In yet another aspect, a method includes both removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands and depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate.Type: GrantFiled: September 21, 2018Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Ranga Rao Arnepalli, Colin Costano Neikirk, Yuriy Melnik, Suresh Chand Seth, Pravin K. Narwankar, Sukti Chatterjee, Lance A. Scudder
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Patent number: 11600470Abstract: Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.Type: GrantFiled: December 27, 2019Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Venkata Sharat Chandra Parimi, Satish Radhakrishnan, Xiaoquan Min, Sarah Michelle Bobek, Sungwon Ha, Prashant Kumar Kulshreshtha, Vinay Prabhakar
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Patent number: 11599016Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets. A process for improving reflectivity from a multilayer stack is also disclosed.Type: GrantFiled: December 16, 2021Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Vibhu Jindal, Wen Xiao, Sanjay Bhat
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Patent number: 11600492Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.Type: GrantFiled: December 10, 2019Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Sai Abhinand, Michael Sorensen, Karthik Elumalai, Dimantha Rajapaksa, Cheng Sun, James S. Papanu, Gaurav Mehta, Eng Sheng Peh, Sri Thirunavukarasu, Onkara Korasiddaramaiah
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Patent number: 11599069Abstract: Embodiments disclosed herein include a method for auto-tuning a system. In an embodiment, the method comprises determining if the system is in a steady state. Thereafter, the method includes exciting the system. In an embodiment, the method comprises storing process feedback measurements from the excited system to provide a set of stored data. In an embodiment, the set of stored data is a subset of all available data generated by the excited system. In an embodiment, the method further comprises determining when the excited system returns to the steady state, and tuning the system using the set of stored data.Type: GrantFiled: September 3, 2021Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Mauro Cimino, Arkaprava Dan, Sanjeev Baluja
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Patent number: 11600580Abstract: Replaceable contact pads of end effectors are provided. The contact pads support substrates in electronic device manufacturing. The contact pad includes a contact pad head having a contact surface configured to contact a substrate, a shaft coupled to the contact pad head, the shaft including a shaft indent formed between an underside of the contact pad head and a shaft end, and a circular securing member received around the shaft and seated in the shaft indent and configured to secure the contact pad to the end effector body. End effectors including replaceable contact pads and maintenance methods are described, as are additional aspects.Type: GrantFiled: February 24, 2020Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Whitney Kroetz, Damon Keith Cox, Leon Volfovski, Jeffrey C. Hudgens, Balamurali Murugaraj
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Patent number: 11600486Abstract: Embodiments of the semiconductor processing methods to form low-? films on semiconductor substrates are described. The processing methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor that has at least one vinyl group. The methods may further include generating a deposition plasma in the substrate processing region from the deposition precursors. A silicon-and-carbon-containing material, characterized by a dielectric constant (? value) less than or about 3.0, may be deposited on the substrate from plasma effluents of the deposition plasma.Type: GrantFiled: September 15, 2020Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Bo Xie, Ruitong Xiong, Sure K. Ngo, Kang Sub Yim, Yijun Liu, Li-Qun Xia
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Publication number: 20230064637Abstract: Exemplary dual-channel showerheads may include an upper plate that defines a first plurality of apertures. The showerheads may include a base having a lower plate. The lower plate may define a second plurality of apertures and a third plurality of apertures. Each of the first plurality of apertures may be fluidly coupled with a respective one of the second plurality of apertures to define a fluid path extending from a top surface of the showerhead through a bottom surface of the showerhead. The base may define a gas inlet that is fluidly coupled with the third plurality of apertures. The base may be detachably coupled with the upper plate using one or more fastening mechanisms. The showerheads may include a compressible gasket positioned between the upper plate and the lower plate.Type: ApplicationFiled: August 23, 2022Publication date: March 2, 2023Applicant: Applied Materials, Inc.Inventors: Kiran Shyam Honnavar, Srikantha Raju, Gangadhar Sheelavant, Aniruddha Pal, Yao-Hung Yang, Basavaraja Shankarappa Kengunti
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Publication number: 20230066404Abstract: Exemplary methods of electroplating may include providing a patterned substrate having at least one opening, where the opening includes one or more sidewalls and a bottom surface. The methods may also include plating a first portion of ruthenium-containing material on the bottom surface of the opening at a first deposition rate and a second portion of ruthenium-containing material on the sidewalls of the opening at a second deposition rate, where the first deposition rate is greater than the second deposition rate. The methods may be used to make integrated circuit devices that include void-free, electrically-conductive lines and columns of ruthenium-containing materials.Type: ApplicationFiled: August 25, 2021Publication date: March 2, 2023Applicant: Applied Materials, Inc.Inventors: Eric J. Bergman, Robert Mikkola
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Patent number: D980176Type: GrantFiled: June 2, 2020Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Aaron Green, Nicholas Michael Bergantz