Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.

Abstract: Memory devices are described. The memory devices include a plurality of bit lines extending through a stack of alternating memory layers and dielectric layers. Each of the memory layers comprises a single crystalline-like silicon layer and includes a first word line, a second word line, a first capacitor, and a second capacitor. Methods of forming stacked memory devices are also described.

Abstract: An additive manufacturing apparatus includes a platform, a dispenser to dispense a plurality of layers of feed material on a top surface of the platform, and an energy delivery system. The energy deliver system includes a light source to emit a light beam, and a reflective member having a plurality of reflective facets. The reflective member is positioned in a path of the light beam to receive the light beam and redirect the light beam toward the top surface of the platform to deliver energy to an uppermost layer of the layers of feed material to fuse the feed material. The reflective member is rotatable such that sequential facets sweep the light beam sequentially along a path on the uppermost layer.

Abstract: Disclosed herein are methods for producing an ultra-dense and ultra-smooth ceramic coating. A method includes feeding a slurry of ceramic particles into a plasma sprayer. The plasma sprayer generates a stream of particles directed toward the substrate, forming a ceramic coating on the substrate upon contact.

Abstract: A method for monitoring a first nanometric structure formed by a multiple patterning process, the method may include performing a first plurality of measurements to provide a first plurality of measurement results; wherein the performing of the first plurality of measurements comprises illuminating first plurality of locations of a first sidewall of the first nanometric structure by oblique charged particle beams of different tilt angles; and processing, by a hardware processor, the first plurality of measurement results to determine a first attribute of the first nanometric structure.

Abstract: An article includes a body that is coated with a ceramic coating. The ceramic coating may include Y2O3 in a range between about 45 mol % to about 99 mol %, ZrO2 in a range between about 1 mol % to about 55 mol %, and Al2O3 in a range between about 1 mol % to about 10 mol %. The ceramic coating may alternatively include Y2O3 in a range between about 45 mol % to about 99 mol % and Al2O3 in a range between about 1 mol % to about 10 mol %. The ceramic coating may alternatively include Y2O3 in a range between about 45 mol % to about 99 mol % and ZrO2 in a range between about 1 mol % to about 55 mol %.

Abstract: A method of processing a substrate includes subjecting a substrate to processing that modifies a thickness of an outer layer of the substrate, measuring a spectrum of light reflected from the substrate during processing, reducing the dimensionality of the measured spectrum to generate a plurality of component values, generating a characterizing value using an artificial neural network, and determining at least one of whether to halt processing of the substrate or an adjustment for a processing parameter based on the characterizing value. The artificial neural network has a plurality of input nodes to receive the plurality of component values, an output node to output the characterizing value, and a plurality of hidden nodes connecting the input nodes to the output node.

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.

Abstract: Substrate temperature control apparatus and electronic device manufacturing systems provide pixelated light-based heating to a substrate in a process chamber. A substrate holder in the process chamber may include a baseplate. The baseplate has a top surface that may have a plurality of cavities and a plurality of grooves connected to the cavities. Optical fibers may be received in the grooves such that each cavity has a respective optical fiber terminating therein to transfer light thereto. Some or all of the cavities may have an epoxy optical diffuser disposed therein to diffuse light provided by the optical fiber. A ceramic plate upon which a substrate may be placed may be bonded to the baseplate. A thermal spreader plate may optionally be provided between the baseplate and the ceramic plate. Methods of controlling temperature across a substrate holder in an electronic device manufacturing system are also provided, as are other aspects.

Abstract: A method for producing an electrical component is disclosed using a molybdenum adhesion layer, connecting a polyimide substrate to a copper seed layer and copper plated attachment.

Abstract: Physical vapor deposition target assemblies, PVD chambers including target assemblies and methods of manufacturing EUV mask blanks using such target assemblies are disclosed. The target assembly includes a target shield adjacent the target and surrounding the peripheral edges of the target, the target shield comprising an insulating material and a non-insulating outer peripheral fixture to secure the target shield to the assembly.

Abstract: In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.

Abstract: Methods are described herein for etching tantalum-containing films with various potential additives while still retaining other desirable patterned substrate portions. The methods include exposing a tantalum-containing film to a chlorine-containing precursor (e.g. Cl2) with a concurrent plasma. The plasma-excited chlorine-containing precursor selectively etches the tantalum-containing film and other industrially-desirable additives. Chlorine is then removed from the substrate processing region. A hydrogen-containing precursor (e.g. H2) is delivered to the substrate processing region (also with plasma excitation) to produce a relatively even and residue-free tantalum-containing surface. The methods presented remove tantalum while retaining materials elsewhere on the patterned substrate.

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming and patterning a spacer layer for multi-patterning processes. In one embodiment, a method for patterning a spacer layer on a substrate includes forming a protective layer on a spacer layer disposed on a structure disposed on a substrate, wherein the protective layer is formed predominately on a top surface of the spacer layer, than a bottom surface of the spacer layer, etching the spacer layer from the bottom surface, forming a polymer layer on the substrate, etching a top portion of the polymer layer and a first portion the spacer layer located the top surface of the structure, and removing the structure from the substrate and leaving a second portion the spacer layer on the substrate.

Abstract: The present disclosure generally relates to process chambers having modular design to provide variable process volume and improved flow conductance and uniformity. The modular design according to the present disclosure achieves improved process uniformity and symmetry with simplified chamber structure. The modular design further affords flexibility of performing various processes or processing substrates of various sizes by replacing one of more modules in a modular process chamber according to the present disclosure.

Abstract: Interconnects and methods for forming interconnects are described and disclosed herein. The interconnect contains a stack formed on a substrate having a via and a trench formed therein, a first metal formed from a first material of a first type deposited in the via, and a second metal formed from a second material of a second type deposited in the trench.

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

Abstract: A collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.

Abstract: Embodiments disclosed herein relate to a light pipe structure for thermal processing of semiconductor substrates. In one embodiment, a light pipe window structure for use in a thermal process chamber includes a transparent plate, and a plurality of light pipe structures formed in a transparent material that is coupled to the transparent plate, each of the plurality of light pipe structures comprising a reflective surface and having a longitudinal axis disposed in a substantially perpendicular relation to a plane of the transparent plate.

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise a substrate with at least one film stack. The film stack comprises a polysilicon layer on the substrate; a bit line metal layer on the polysilicon layer; a cap layer on the bit line metal layer; and a hardmask on the cap layer. The memory device of some embodiments includes an optional barrier metal layer on the polysilicon layer and the bit line metal layer is on the barrier metal layer. Methods of forming electronic devices are described where one or more patterns are transferred through the films of the film stack to provide the bit line of a memory device.