Patents Assigned to Applied Material
  • Publication number: 20200235017
    Abstract: Thermal monitors comprising a substrate with at least one camera position on a bottom surface thereof, a wireless communication controller and a battery. The camera has a field of view sufficient to produce an image of at least a portion of a wafer support, the image representative of the temperature within the field of view. Methods of using the thermal monitors are also described.
    Type: Application
    Filed: April 7, 2020
    Publication date: July 23, 2020
    Applicant: Applied Materials, Inc.
    Inventor: Deepak Jadhav
  • Publication number: 20200232088
    Abstract: The present disclosure provides an apparatus for vacuum deposition on a substrate. The apparatus includes a vacuum chamber having a first area and a first deposition area, one or more deposition sources at the first deposition area, wherein the one or more deposition sources are configured for vacuum deposition on at least a first substrate while the at least a first substrate is transported along a first transport direction past the one or more deposition sources, and a first substrate transport unit in the first area, wherein the first substrate transport unit is configured for moving the at least a first substrate within the first area in a first track switch direction, which is different from the first transport direction.
    Type: Application
    Filed: April 28, 2016
    Publication date: July 23, 2020
    Applicants: Applied Materials, Inc., Applied Materials, Inc.
    Inventors: John M. WHITE, Oliver GRAW
  • Publication number: 20200234971
    Abstract: Exemplary etching methods may include flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a hydrogen-containing precursor into the substrate processing region. The methods may include contacting a substrate housed in the substrate processing region with the fluorine-containing precursor and the hydrogen-containing precursor. The substrate may include a trench or recessed feature, and a spacer may be formed along a sidewall of the trench or feature. The spacer may include a plurality of layers including a first layer of a carbon-containing or nitrogen-containing material and a second layer of an oxygen-containing material. The methods may also include removing the oxygen-containing material.
    Type: Application
    Filed: April 6, 2020
    Publication date: July 23, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Zhijun Chen, Lin Xu, Anchuan Wang
  • Publication number: 20200234959
    Abstract: Methods of modifying the threshold voltage of metal oxide stacks are discussed. These methods utilize materials which provide larger shifts in threshold voltage while also being annealed at lower temperatures.
    Type: Application
    Filed: April 6, 2020
    Publication date: July 23, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Siddarth Krishnan, Rajesh Sathiyanarayanan, Atashi Basu, Paul F. Ma
  • Patent number: 10717265
    Abstract: An additive manufacturing system includes a platen having a top surface to support an object being manufactured, a support structure, an actuator coupled to at least one of the platen or the support structure to create relative motion there between along a first axis parallel to the top surface, a plurality of printheads mounted on the support structure, and an energy source. Each printhead includes a dispenser to deliver a plurality of successive layers of feed material over the platen. The printheads are spaced along a second axis perpendicular to the first axis such that during motion along the first axis the plurality of printheads dispense feed material in a plurality of parallel swaths along the first axis. The energy source is configured to fuse at least a portion of the feed material.
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: July 21, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Hou T. Ng, Raanan Zehavi, Nag B. Patibandla
  • Patent number: 10718719
    Abstract: Embodiments include devices and methods for detecting particles in a wafer processing tool. In an embodiment, a particle monitoring device having a wafer form factor includes several micro sensors capable of operating in all pressure regimes, e.g., under vacuum conditions. The particle monitoring device may include a clock to output a time value when a parameter of a micro sensor changes in response to receiving a particle within a chamber of the wafer processing tool. A location of the micro sensor or the time value may be used to determine a source of the particle. Other embodiments are also described and claimed.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: July 21, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Leonard Tedeschi, Kartik Ramaswamy
  • Patent number: 10720367
    Abstract: A method for process analysis includes acquiring first inspection data, using a first inspection modality, with respect to a substrate having multiple instances of a predefined pattern of features formed thereon using different, respective sets of process parameters. Characteristics of defects identified in the first inspection data are processed so as to select a first set of defect locations in which the first inspection data are indicative of an influence of the process parameters on the defects. Second inspection data are acquired, using a second inspection modality having a finer resolution than the first inspection modality, of the substrate at the locations in the first set. The defects appearing in the second inspection data are analyzed so as to select, from within the first set of the locations, a second set of the locations in which the second inspection data are indicative of an optimal range of the process parameters.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: July 21, 2020
    Assignee: Applied Materials Israel Ltd.
    Inventors: Idan Kaizerman, Yotam Sofer
  • Patent number: 10719018
    Abstract: Embodiments described provide dynamic imaging systems that compensates for pattern defects resulting from distortion caused by warpage of the substrate. The methods and apparatus described are useful to create compensated exposure patterns. The dynamic imaging system includes an inspection system configured to provide 3D profile measurements and die shift measurements of the first substrate to the interface configured to provide compensated pattern data to the digital lithography system configured to receive the compensated pattern data from the interface and expose the photoresist with a compensated pattern.
    Type: Grant
    Filed: July 10, 2018
    Date of Patent: July 21, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Ching-Chang Chen, Chien-Hua Lai, Wei-Chung Chen, Shih-Hao Kuo, Hsiu-Jen Wang
  • Patent number: 10720311
    Abstract: Embodiments described herein include a modular high-frequency emission source comprising a plurality of high-frequency emission modules and a phase controller. In an embodiment, each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment, each oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, each amplification module is coupled to an oscillator module, in an embodiment, each applicator is coupled to an amplification module. In an embodiment, the phase controller is communicatively coupled to each oscillator module.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: July 21, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Philip Allan Kraus, Thai Cheng Chua, Christian Amormino, Dmitry A. Dzilno
  • Publication number: 20200224305
    Abstract: A deposition system for depositing evaporated material on a substrate is described. The deposition system includes a vapor source having one or more vapor outlets; a shield; and a cooling device for cooling the shield, wherein the vapor source is movable to an idle position in which the one or more vapor outlets are directed toward the shield. Further, a deposition apparatus with a deposition system as well as a method of operating a deposition system are described.
    Type: Application
    Filed: April 12, 2017
    Publication date: July 16, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Stefan BANGERT, Matthias KREBS
  • Publication number: 20200227275
    Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.
    Type: Application
    Filed: March 26, 2020
    Publication date: July 16, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Amrita B. Mullick, Abhijit Basu Mallick, Srinivas Gandikota, Susmit Singha Roy, Yingli Rao, Regina Freed, Uday Mitra
  • Publication number: 20200227637
    Abstract: The present disclosure provides a deposition apparatus for a vacuum deposition process. The deposition apparatus includes a vacuum chamber, a movable deposition source arranged in the vacuum chamber, and a supply arrangement providing a supply passage for media supply lines for the movable deposition source, wherein the supply arrangement comprises an axially deflectable element.
    Type: Application
    Filed: March 17, 2017
    Publication date: July 16, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Sebastian Gunther ZANG, Andreas SAUER, Oliver HEIMEL
  • Publication number: 20200224313
    Abstract: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.
    Type: Application
    Filed: January 11, 2019
    Publication date: July 16, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Laksheswar Kalita, Soonam Park, Dmitry Lubomirsky, Tien Fak Tan, LokKee Loh, Saravjeet Singh, Tae Won Kim
  • Patent number: 10714305
    Abstract: A method for evaluating a specimen, the method can include positioning an energy dispersive X-ray (EDX) detector at a first position; scanning a flat surface of the specimen by a charged particle beam that exits from a charged particle beam optics tip and propagates through an aperture of an EDX detector tip; detecting, by the EDX detector, x-ray photons emitted from the flat surface as a result of the scanning of the flat surface with the charged particle beam; after a completion of the scanning of the flat surface, positioning the EDX detector at a second position in which a distance between the EDX detector tip and a plane of the flat surface exceeds a distance between the plane of the flat surface and the charged particle beam optics tip; and wherein a projection of the EDX detector on the plane of the flat surface virtually falls on the flat surface when the EDX detector is positioned at the first position and when the EDX detector is positioned at the second position.
    Type: Grant
    Filed: February 19, 2019
    Date of Patent: July 14, 2020
    Assignee: Applied Materials Israel Ltd.
    Inventors: Alon Litman, Efim Vinnitsky
  • Patent number: 10714321
    Abstract: Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: July 14, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Brian T. West, Michael S. Cox, Jeonghoon Oh
  • Patent number: 10710358
    Abstract: Embodiments described herein generally relate to an apparatus and methods for removing a glue residue from a photomask. The glue residue may be exposed when a pellicle is removed from the photomask. Before a new pellicle can be adhered to the photomask, the glue residue may be removed. To remove the glue residue, a laser beam may be projected through a lens and focused on a surface of the glue residue. The glue residue may be ablated from the photomask by the laser beam.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: July 14, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Banqiu Wu, Eli Dagan
  • Patent number: 10714390
    Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: July 14, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Wei-Sheng Lei, Brad Eaton, Madhava Rao Yalamanchili, Saravjeet Singh, Ajay Kumar, James M. Holden
  • Patent number: 10710307
    Abstract: An additive manufacturing apparatus includes a platform, a dispenser to dispense successive layers of feed material on the platform, a heat source above the platform, an energy source to emit a beam of energy to impinge a second region of the topmost layer, a sensor system to measure temperatures of the topmost layer of feed material and to measure a dimension of a melt pool in the second region, and a controller. The heat source is configured to deliver energy to a first region of a topmost layer of the successive layers of feed material to pre-heat and/or heat-treat the first region. The controller is configured to operate the heat source to heat the topmost layer of feed material based on the measured temperatures, and operate the energy source to fuse feed material in the topmost layer based on the measured dimension.
    Type: Grant
    Filed: August 11, 2017
    Date of Patent: July 14, 2020
    Assignee: Applied Materials, Inc.
    Inventors: David Masayuki Ishikawa, Todd J. Egan, Paul J. Steffas
  • Patent number: 10711347
    Abstract: Processing chambers having a lid with a lower surface, a substrate support with an upper surface facing the lid and an inner baffle ring between the substrate support and the lid are described. Methods of using the processing chamber are described.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: July 14, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Dale R. DuBois, Karthik Janakiraman, Kien N. Chuc
  • Publication number: 20200216959
    Abstract: Embodiments of the present disclosure generally relate to methods of depositing a conformal layer on surfaces of high aspect ratio structures and related apparatuses for performing these methods. The conformal layers described herein are formed using PECVD methods in which a semiconductor device including a plurality of high aspect ratio features is disposed on a substrate support in a process volume of a process chamber, gases are supplied to the process volume, and a plasma is generated in the process volume by pulsing RF power coupled to the process gases disposed in the process volume of the process chamber.
    Type: Application
    Filed: August 20, 2018
    Publication date: July 9, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Shaunak MUKHERJEE, Abhijit B. MALLICK