Abstract: Embodiments of the present disclosure generally relate to methods of depositing a conformal layer on surfaces of high aspect ratio structures and related apparatuses for performing these methods. The conformal layers described herein are formed using PECVD methods in which a semiconductor device including a plurality of high aspect ratio features is disposed on a substrate support in a process volume of a process chamber, gases are supplied to the process volume, and a plasma is generated in the process volume by pulsing RF power coupled to the process gases disposed in the process volume of the process chamber.

Abstract: Exemplary processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a support shaft assembly. The support shaft assembly has a ring shaped susceptor, a disc shaped heat plate, and a support shaft system. The support shaft system supports the susceptor and the heat plate, such that the susceptor is supported above the heat plate defining a gap between the heat plate and the susceptor. In another embodiment, the heat plate includes a plurality of grooves and the susceptor includes a plurality of fins. The fins are configured to sit within the grooves such that the susceptor is supported above the heat plate, defining a gap between the heat plate and the susceptor. In another embodiment, a method of processing a substrate in the aforementioned embodiments is disclosed herein.

Abstract: A flexible membrane for use in a carrier head has a generally circular main portion with a lower surface, an annular outer portion for connection to a base assembly, and an annular flap extending from the main portion on a side opposite the lower surface for connection to the base assembly. At least one surface of the flap has a surface texture to prevent adhesion.

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce etching of the substrate.

Abstract: Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.

Abstract: A high solids content paste for fabrication of secondary battery electrodes may comprise: a negative active material or a positive active material; a binder; a solvent; and a hyperdispersant; wherein the high solids content paste has a specific viscosity chosen for a particular coating tool and a composition such that the high solids content paste will maintain a deposited shape after coating at least until the high solids content paste has dried and wherein the dry coating thickness is in the range of 5 microns to 300 microns. The high solids content paste with negative active material has a viscosity in the range of 30,000 cP to 45,000 cP and a corresponding density of 1.40 g/cc to 1.43 g/cc. The high solids content paste with positive active material has a viscosity in the range of 25,479 cP to 47,184 cP and a corresponding density of 2.72 g/cc to 2.73 g/cc.

Abstract: Embodiments include a plasma processing tool that includes a processing chamber, and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources include an array of applicators that are positioned over a dielectric body that forms a portion of an outer wall of the processing chamber. The array of applicators may be coupled to the dielectric body. Additionally, the plurality of modular microwave sources may include an array of microwave amplification modules. In an embodiment, each microwave amplification module may be coupled to at least one of the applicators in the array of applicators. According to an embodiment, the dielectric body be planar, non-planar, symmetric, or non-symmetric. In yet another embodiment, the dielectric body may include a plurality of recesses. In such an embodiment, at least one applicator may be positioned in at least one of the recesses.

Abstract: Embodiments of the present disclosure generally relate to a method for forming an optical component, for example, for a virtual reality or augmented reality display device. In one embodiment, the method includes forming a first layer on a substrate, and the first layer has a first refractive index. The method further includes pressing a stamp having a pattern onto the first layer, and the pattern of the stamp is transferred to the first layer to form a patterned first layer. The method further includes forming a second layer on the patterned first layer by spin coating, and the second layer has a second refractive index greater than the first refractive index. The second layer having the high refractive index is formed by spin coating, leading to improved nanoparticle uniformity in the second layer.

Abstract: Metal coordination complexes comprising an iridium atom coordinated to at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are independently selected from the group consisting of C1-C4 alkyl and amino groups, and each of R2 and R3 are independently selected from the group consisting of H, C1-C3 alkyl, or amino groups are described. Processing methods using the metal coordination complexes are also described.

Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise a substrate with at least one film stack. The film stack comprises a polysilicon layer on the substrate; a bit line metal layer on the polysilicon layer; a cap layer on the bit line metal layer; and a hardmask on the cap layer. The memory device of some embodiments includes an optional barrier metal layer on the polysilicon layer and the bit line metal layer is on the barrier metal layer. Methods of forming electronic devices are described where one or more patterns are transferred through the films of the film stack to provide the bit line of a memory device.

Abstract: Provided are acetylide-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a acetylide-based precursor and a reactant in various combinations.

Abstract: An apparatus and method for cooling a gas distribution assembly with a cooling plate. The cooling plate having a body having a top surface, an outer perimeter, a center, an inner zone and an outer zone. A plurality of channels formed through the top surface. The plurality of channels having a first outer channel having one or more first outer channel segments configured for flowing a first cooling fluid from a cooling fluid inlet to a cooling fluid outlet and a first inner channel disposed between the first outer channel and the center having one or more first inner channel segments configured for flowing a second cooling fluid from a cooling fluid inlet to a cooling fluid outlet wherein flow in adjacent segments is in an opposite direction.

Abstract: Provided herein are systems and methods for spatially resolved optical metrology of an ion beam. In some embodiments, a system includes a chamber containing a plasma/ion source operable to deliver an ion beam to a wafer, and an optical collection module operable with the chamber, wherein the optical collection module includes an optical device for measuring a light signal from a volume of the ion beam. The system may further include a detection module operable with the optical collection module, the detection module comprising a detector for receiving the measured light signal and outputting an electric signal corresponding to the measured light signal, thus corresponding to the property of the sampled plasma volume.

Abstract: Buffer chamber including robots, a carousel and at least one heating module for use with a batch processing chamber are described. Robot configurations for rapid and repeatable movement of wafers into and out of the buffer chamber and cluster tools incorporating the buffer chambers and robots are described.

Abstract: An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes, and the gap distance is between 0.005 inch and 0.050 inch.

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from amorphous tantalum nitride formed by non-reactive sputtering.