Abstract: A system and method of receiving HDLC communications is disclosed. The system measures the pulse width of the incoming signal and converts each pulse into a series of bits, based on its pulse width. In this way, the reception of the HDLC communication is not dependent on any particular clock rate and is adaptable. The system takes advantages of the fact that the flag is a string of six consecutive bits that are all “1”. Thus, the longest positive pulse width may be used to determine the bit rate. This allows the system to operate over a very broad range of data rates.

Abstract: Embodiments of the present disclosure include an apparatus and methods for the plasma processing of a substrate. Some embodiments are directed to a plasma processing chamber. The plasma processing chamber generally includes a planar coil region comprising a plurality of planar coils, a first power supply circuit coupled to at least two of the plurality of planar coils, a concentric coil region at least partially surrounding the planar coil region, and a second power supply circuit coupled to at least two of a plurality of concentric coils. The first power supply circuit may be configured to bias the at least two of the plurality of planar coils to affect a plasma in a center region of the plasma processing chamber, and the second power supply circuit may be configured to bias the at least two of the plurality of concentric coils to affect the plasma in an outer region.

Abstract: Embodiments disclosed herein include a method of setting a target profile. In an embodiment, the method comprises obtaining a first gain curve for one or more temperature sensor offsets, and obtaining a second gain curve for one or more zone multipliers. In an embodiment, the method further comprises combining the first gain curve and the second gain curve into a thermal model. In an embodiment, the method further comprises obtaining a reference data set, and using the thermal model to generate temperature sensor offsets and/or zone multipliers to apply to the reference data set in order to generate the target profile.

Abstract: In order to relieve the stress on the substrates in a 3D stacked electronic assembly, a substrate frame is divided into a plurality of frame sections that are separated by spaces between the frame sections. These separations allow the substrates to expand/contract in response to temperature variations and other environmental conditions, and generally allow the substrates to move in one or more axial directions. The separations between the substrate portions are design-specific for each substrate design. The placement of IC packages on either side of the substrate is analyzed to identify areas of maximal warpage through physical measurements, physical model simulations, or using a trained neural network. The spaces in the substrate frame are then be placed next to or aligned with the areas of maximal warpage to reduce the stress on the substrate.

Abstract: There is provided a method and a system configured obtain an image of a semiconductor specimen including one or more arrays, each including repetitive structural elements, and one or more regions, each region at least partially surrounding a corresponding array and including features different from the repetitive structural elements, wherein the PMC is configured to, during run-time scanning of the semiconductor specimen, perform a correlation analysis between pixel intensity of the image and pixel intensity of a reference image informative of at least one of the repetitive structural elements, to obtain a correlation matrix, use the correlation matrix to distinguish between one or more first areas of the image corresponding to the one or more arrays and one or more second areas of the image corresponding the one or more regions, and output data informative of the one or more first areas of the image.

Abstract: Variable orifice check valves comprising a flange with a guide pin, spring and movable plate are described. The flange has a body with at least one guide pin opening in the top surface. A guide pin is positioned within the at least one guide pin opening and a spring is positioned around the guide pin. The movable plate has an opening and slides along the guide pins with the spring between the top surface of the flange body and the bottom surface of the movable plate.

Abstract: A lift apparatus includes a lift assembly and a servo-control system. The lift assembly includes at least one pneumatic actuator including a movable member to provide a load to transfer a substrate between a support and a transfer plane. The lift assembly further includes at least one proportional pneumatic valve to control fluid flow between the actuator and a pressurized fluid supply or a vent, a plurality of pressure sensors each to measure pressure in a respective supply line to the actuator, and at least one position sensor to measure a position of the movable member. The servo-control system includes a controller to determine an output force based on a commanded force and an estimated force, generate a control signal based on the output force, and apply the control signal to the proportional valve to move the movable member.

Abstract: Embodiments disclosed herein include methods of processing substrates in a tool. In an embodiment, the method of processing the substrate in the tool, comprises receiving an augmented recipe with a machine learning (ML) and/or an artificial intelligence (AI) module. In an embodiment, the augmented recipe comprises, a recipe for processing the substrate in the tool, and a matrix identifier that corresponds to one or more substrate properties. In an embodiment the method further comprises using the ML and/or AI module to retrieve a data set from a database, where the data set is associated with the matrix identifier, and using the ML and/or AI module to modify the augmented recipe to form a modified recipe, where the modification is dependent on the data set.

Abstract: Embodiments herein are directed to a linear accelerator assembly for an ion implanter. In some embodiments, a LINAC may include a coil resonator and a plurality of drift tubes coupled to the coil resonator by a set of flexible leads.

Abstract: Embodiments of the present disclosure generally relate to a method for etching a film stack with high selectivity and low etch recipe transition periods. In one embodiment, a method for etching a film stack having stacked pairs of oxide and nitride layers is described. The method includes transferring a substrate having a film stack formed thereon into a processing chamber, providing a first bias voltage to the substrate, etching an oxide layer of the film stack while providing the first bias voltage to the substrate, providing a second bias voltage to the substrate, the second bias voltage greater than the first bias voltage, and etching a nitride layer of the film stack while providing the second bias voltage to the substrate.

Abstract: Implementations disclosed describe, among other things, a system and a method of scanning a substrate with a beam of light and detecting for each of a set of locations of the substrate, a respective one of a set of intensity values associated with a beam of light reflected from (or transmitted through) the substrate. The detected intensity values are used to determine a profile of a thickness of the substrate.

Abstract: A load lock in which the pumping speed is controlled so as to minimize the possibility of condensation is disclosed. The load lock is in communication with a vacuum pump and a valve. A controller is used to control the valve such that the supersaturation ratio within the load lock does not exceed a predetermined threshold, which is less than or equal to the critical value at which vapor condenses. In certain embodiments, a computer model is used to generate a profile, which may be a pumping speed profile or a pressure profile, and the valve is controlled according to the profile. In another embodiment, the load lock comprises a temperature sensor and a pressure sensor. The controller may calculate the supersaturation ratio based on these parameters and control the valve accordingly.

Abstract: Exemplary substrate processing system faceplates may include a plate that is characterized by a first surface and a second surface opposite the first surface. The second surface may define a plurality of recesses that extend through a portion of a thickness of the plate. The plate may define a plurality of apertures through the thickness of the plate. Each aperture may extend through a bottom surface of one recess of the plurality of recesses. Each recess may have a greater diameter than the aperture extending through the bottom surface of the recess. The faceplate may include a plurality of shape-memory actuators. Each shape-memory actuator may be seated within a respective one of the plurality of recesses. Each shape-memory actuator may define an actuator aperture. A diameter of the actuator aperture each shape memory actuator may be variable.

Abstract: Printable resin precursor compositions and polishing articles including printable resin precursors are provided. Printable resin precursors include a curable precursor formulation having a viscosity of less than or about 15 cP at 70° which include at least one urethane acrylate oligomer, at least one reactive monomer, and a photoinitiator. The curable precursor formulation exhibits an ultimate tensile strength measured in mPa and an elongation at break (%), where a product of the ultimate tensile strength and the elongation at break is greater than or about 2,000.

Abstract: Printable resin precursor compositions and polishing articles including printable resin precursors are provided. Printable resin precursors include a curable precursor formulation having a viscosity of less than or about 15 cP at 70° which include at least one urethane acrylate oligomer, at least one reactive monomer, and a photoinitiator. The curable precursor formulation exhibits an ultimate tensile strength measured in mPa and an elongation at break (%), where a product of the ultimate tensile strength and the elongation at break is greater than or about 2,000.

Abstract: A system may include a gimbal defining a plurality of pockets, where each pocket may include a first portion and a second portion that extends between the first portion and a base of the pocket. The second portion may have a greater diameter than the first portion. The system may include a plurality of conditioning disks, where each conditioning disk is seated within the first portion of a respective pocket. The system may include a plurality of gaskets, where each gasket is seated within the second portion of a respective pocket. The system may include a plurality o-rings, each o-ring disposed between a peripheral edge of one of the plurality of conditioning disks and a lateral wall of one of the plurality of pockets. The system may include a plurality of shoulder screws for coupling the gimbal with one of the plurality of gaskets and a conditioning disk.

Abstract: Disclosed herein is a method for non-destructive depth-profiling including projecting a pulsed pump beam into a specimen, projecting a pulsed probe beam thereinto, and sensing light returned therefrom to obtain a measured signal. Each probe pulse is configured to undergo Brillouin scattering off a primary acoustic pulse induced by the directly preceding pump pulse, so as to be scattered there off at a respective depth within the specimen. The method further includes executing an optimization algorithm configured to receive as inputs the measured signal, and/or a processed signal obtained therefrom, and output values of structural parameter(s) characterizing the specimen through minimization of a cost function indicative of a difference between the measured signal and a simulated signal obtained using a forward model simulating the scattering of a pulsed probe beam off at least the primary acoustic pulses.

Abstract: Methods of semiconductor processing may include forming plasma effluents of a hydrogen-and-fluorine-containing precursor. The plasma effluents may then contact a silicon-containing hardmask material and a photoresist material. The silicon-containing hardmask material can overlay an organic material overlaying a substrate in a processing region of a semiconductor processing chamber. Etching the silicon-containing hardmask material with the plasma effluents while the photoresist material with the plasma effluents. The silicon-containing hardmask material can be etched at a selectivity greater than or about 10 relative to the photoresist material. A temperature in the processing region can be maintained at about ?20° C. or less.

Abstract: Exemplary anneal chambers may include a base that defines a chamber interior. The base may include a cooling plate within the chamber interior. The base and the cooling plate may be integral with one another. The chambers may include a lid that is coupled with the base. The chambers may include a heater plate mounted in the chamber interior alongside the cooling plate. The chambers may include a transfer hoop movably coupled within the chamber interior. The base may define a first transfer hoop recess about at least a portion of the heater plate. The base may define a second transfer hoop recess about at least a portion of the cooling plate.