Abstract: A gas pressure balance valve includes a valve body, a one-way valve and a buffer assembly. The valve body includes a gas inlet end and a gas outlet end, the gas inlet end is connected with a first gas pressure area, the gas outlet end is connected with a second gas pressure area, and a pressure difference is existed between the first gas pressure area and the second gas pressure area. The one-way valve is located in the valve body, and configured to achieve the balance between the pressures of the first gas pressure area and the second gas pressure area. The buffer assembly is located between the gas inlet end and the one-way valve, and configured to adjust the pressure on the surface of the one-way valve.

Abstract: A test method and device for a contact resistor are provided, configured to test a contact resistor of a metal-oxide-semiconductor (MOS) transistor. The method includes: a resistance value per area and a temperature coefficient of resistance of the contact resistor are acquired; and a target resistance value of the contact resistor is determined according to the resistance value per area, the temperature coefficient of resistance, and an area of the contact resistor.

Abstract: The present application relates to electrostatic protection circuit, integrated circuit and electrostatic discharge method.

Abstract: The present application relates to a capacitor structure and a method for manufacturing the same, and a memory using the capacitor structure. The method includes the following operations: a substrate is provided; a stacked structure is formed on the substrate, the stacked structure including at least two support material layers arranged at an interval and a sacrificial material layer located between adjacent support material layers; capacitance holes is formed in the stacked structure, each of the capacitance holes including at least three through holes arranged in isolation; a lower electrode is formed, the lower electrode at least covering a side wall and a bottom of each through hole; the sacrificial material layer is removed, and a capacitance dielectric layer is formed on a surface of the lower electrode; and an upper electrode is formed on a surface of the capacitance dielectric layer.

Abstract: A refresh circuit includes: a signal generation module, configured to generate an inversion signal and a carry signal based on a refresh command; an adjustment unit, configured to generate, if a first refresh signal and a second refresh signal are generated based on the refresh command, an inversion adjustment signal according to the inversion signal, and generate, if only the first refresh signal is generated based on the refresh command, the inversion adjustment signal according to an inversion signal corresponding to a first refresh signal generated based on a current refresh command, and generate the inversion adjustment signal only according to an inversion signal corresponding to a second refresh signal generated based on a next refresh command; and a counting module, configured to generate a first output signal and a second output signal, and invert the first output signal based on the inversion adjustment signal.

Abstract: The present disclosure provides a capacitor structure and a method for manufacturing same. The capacitor structure includes: a substrate, a first capacitor contact layer, a bottom electrode layer, a capacitor dielectric layer, and a top electrode layer, where the first capacitor contact layer is arranged on the substrate in an array manner, the bottom electrode layer surrounds a side wall of the first capacitor contact layer and extends in a direction of the first capacitor contact layer away from the substrate, the capacitor dielectric layer covers an upper surface of the substrate, a surface of the bottom electrode layer and an upper surface of the first capacitor contact layer, and the top electrode layer covers a surface of the capacitor dielectric layer.

Abstract: Embodiments relate to an electrostatic discharge (ESD) protection circuit and a chip. The ESD protection circuit includes: an ESD protection module, arranged inside a protected chip and connected to a protected circuit; and a control module, connected to the ESD protection module and configured to output a low-level signal to the ESD protection module to trigger the ESD protection module to discharge an electrostatic current when an ESD event occurs in the protected chip, and output a high-level signal to the ESD protection module to reduce a static leakage current of the ESD protection module when the ESD event does not occur in the protected chip.

Abstract: A refresh circuit includes signal selector configured to select one of normal and redundant word line logical addresses as output, output signal of which is designated as first logical address; row address latch connected to output terminal of signal selector and configured to output row hammer address and row hammer flag signal according to first logical address; seed arithmetic unit connected to output terminal of row address latch and configured to generate seed address according to row hammer address; logical arithmetic unit connected to output terminal of seed arithmetic unit and configured to obtain row hammer refresh address according to seed address, row hammer refresh address is adjacent physical address of seed address; and pre-decode unit connected to output terminal of logical arithmetic unit and configured to receive row hammer refresh address, and convert it into physical address to be used by memory array of memory to perform refresh operation.

Abstract: A method for testing a memory chip includes: in response to read command for the memory chip, controlling clock signal to be kept in first state within first preset time period and at the same time controlling complementary clock signal to be kept in second state within first preset time period; in response to clock signal kept in the first state and complementary clock signal kept in the second state, keeping data strobe signal in the first state within second preset time period and at the same time keeping complementary data strobe signal in the second state within the second preset time period; and when the data strobe signal and the complementary data strobe signal are kept in first and second states respectively, controlling first and second driving modules connected respectively to data strobe terminal and complementary data strobe terminal to operate and measure first and second resistance values respectively.

Abstract: The present disclosure provides a nozzle assembly and a semiconductor equipment adopting the nozzle assembly. The nozzle assembly includes: at least two nozzles; at least one spacer, connecting two adjacent nozzles so that the distance between the two adjacent nozzles is within a preset range; and a robot arm, connected with one of the nozzles and configured to drive the at least two nozzles to move.

Abstract: Provided are a signal generation circuit and a memory. The signal generation circuit includes: a clock delay circuit for delaying an initial pulse signal to output an intermediate signal delayed by a first delay duration, the first delay duration being equal to one or more clock cycles; a physical delay circuit for delaying the intermediate signal to output a target signal, if an actual delay duration of the physical delay circuit is equal to a second delay duration, the target signal being delayed by a target duration, a difference between the actual and second delay durations fluctuating within a first preset range, and the shorter the second delay duration, the narrower the first preset range; and a generation circuit for outputting a function pulse signal having a pulse width equal to a time interval between rising edges of the initial pulse signal and the target signal.

Abstract: A repair circuit includes: a plurality of redundant memory cells, each redundant memory cell being configured with a state signal; and a repair module connected to the plurality of redundant memory cells and configured to determine target memory cells from the redundant memory cells based on the state signals and repair defective memory cells through the target memory cells. The target memory cells are in one-to-one correspondence to the defective memory cells. The repair module can repair, at each of multiple repair stages, different defective memory cells, the plurality of redundant memory cells being shared at the multiple repair stages.

Abstract: The present disclosure provides a write cache circuit, a data write method, and a memory. The write cache circuit includes: a control circuit configured to generate, on the basis of a mask write instruction, a first write pointer and a pointer to be positioned, generate a second write pointer on the basis of a write command, generate a first output pointer on the basis of a mask write shift instruction, and generate a second output pointer on the basis of a write shift instruction; a first cache circuit configured to cache, on the basis of the first write pointer, the pointer to be positioned and output a positioned pointer on the basis of the first output pointer, the positioned pointer being configured to instruct a second cache circuit to output a write address written by the second write pointer generated according to the mask write instruction.

Abstract: In the method for manufacturing a semiconductor structure, a film structure is formed on a substrate, a pattern transfer layer is formed on the film structure, a plurality of holes are defined on the pattern transfer layer, and the pattern transfer layer is flattened; the film structure is etched through the holes to form capacitor holes in the film structure.

Abstract: An amplification circuit includes a sense amplification circuit, including a read node SABL, a complementary read node SABLB, a first node PCS, and a second node NCS; an isolation circuit, coupled to the SABL, the SABLB, a hit line BL, and a complementary hit line BLB, configured to: in a sense amplification stage, couple the SABL to the BL and couple the BLB to the SABLB; an offset cancellation circuit, coupled to the BL, the BLB, the SABL, and the SABLB, configured to: in an offset cancellation stage, couple the BL to the SABLB and couple the BLB to the SABL; and a first power supply circuit, coupled to the PCS, and configured to: acquire memory temperature information, and in the offset cancellation stage, adjust, according to the memory temperature information, a magnitude of a power supply voltage provided to the PCS.

Abstract: A semiconductor device layout structure includes: an active area layout layer including a plurality of first active area patterns, and at least one second active area pattern each connected to at least two of the plurality of first active area patterns; a drain contact layer configured to form a plurality of drain contact plugs and arranged on each first active area pattern; a source contact layer configured to form a source contact plug and arranged on the at least one second active area pattern; and a gate layer including a plurality of gate patterns extending in a first direction, the plurality of gate patterns being arranged over the plurality of first active area patterns at a position away from the drain contact layer and configured to form a plurality of gates.

Abstract: An amplification circuit includes: a sense amplification circuit including a read node, a complementary read node, a first node and a second node; an isolation circuit, which couples the read node to a bit line and couples the complementary read node to a complementary bit line in a sense amplification stage; an offset cancellation circuit, which couples the bit line to the complementary read node and couple the complementary bit line to read node in an offset cancellation stage; and a first power supply circuit, coupled to the first node, including a first power supply and a second power supply, a power supply voltage of the first power supply being higher than that of the second power supply, the first power supply circuit couples the first power supply to the first node in offset cancellation stage, and couples the second power supply to the first node in sense amplification stage.

Abstract: The present application relates to a movable buffer, an automated material handling system and a corresponding overhead hoist transfer. The movable buffer includes: an inclined track including a first end and a second end opposite to each other, wherein the second end of the inclined track is higher than the first end of the inclined track; a storage tray connected to the inclined track, wherein the storage tray is provided with a space for accommodating a front opening unified pod, the storage tray is provided with at least one opening; and a transmission mechanism, wherein the upper surface of the transmission mechanism is connected to the lower surface of the overhead buffer, the lower surface of the transmission mechanism is connected to the inclined track, and the transmission mechanism is used for driving the storage tray to slide from the first end of the inclined track to the second end.

Abstract: Embodiments of the present application provide a semiconductor structure and a manufacturing method thereof. The semiconductor structure manufacturing method includes: providing a base substrate and an array region, the array region being composed of strip structures arranged in parallel, the base substrate being made of a same material as the array region, and a thickness of the base substrate being greater than a thickness of the array region; etching the strip structure to form discrete first strip structures; base substrate providing a second mask layer, an opening pattern of the second mask layer exposing the to-be-etched region and the side plane, and a right angle being formed between an orthographic projection of the side plane and the opening pattern; form a first active region, the first active region having a mapping right angle corresponding to the right angle.

Abstract: A method for manufacturing a capacitor array includes: providing a substrate provided with a device area configured for forming a capacitor and a peripheral area located at a periphery of the device area; forming successively a first support layer and a first sacrificial layer on the substrate; etching the first sacrificial layer of the peripheral area to expose the first support layer, so as to form a first via; and filling the first via to form a support pillar.