Abstract: Embodiments described herein provide a LED lighting system and method. A transformer has a primary winding and a secondary winding. A plurality of LED strings are coupled to the secondary winding of the transformer. At least one switch is coupled to at least one of the plurality of LED strings. A controller is coupled to the at least one switch and configured to control the operation of the at least one switch such that current flows through the plurality of LED strings in an alternating manner.

Abstract: One embodiment of a capacitive sensor array may comprise a first plurality of sensor elements and a second sensor element capacitively coupled with each of the first plurality of sensor elements. The second sensor element may further comprise a first main trace and a second main trace, where the first main trace and the second main trace intersect each of the first plurality of sensor elements, and where each of the main traces cross at least one of a plurality of unit cells associated with the second sensor element. The second sensor element may also comprise a connecting subtrace electrically coupled to both the first main trace and the second main trace, and within each unit cell, at least one primary subtrace branching away from the first main trace or the second main trace.

Abstract: A contact's interaction with a sensing array is subject to several external and internal stimuli which may impact a processing unit's confidence in the characteristics of that interaction or the presence of the interaction itself. Fidelity of user action is greatly improved with a step-wise and holistic analysis of a contact on an array of capacitance sensors, which allows for repetition of certain steps of processing or the entire operation if threshold confidence levels are not achieved.

Abstract: Capacitive touch sensors and touchscreen data processing methods are provided. In one embodiment, the method includes sequentially integrating and converting charge from each of a plurality of sensing capacitors in an array to digital data, the digital data including sample values corresponding to a measured capacitance for each of the plurality of sensing capacitors. Noise is then separated from useful information by filtering the sample values on a sample-by-sample basis. Finally, the filtered sample values are summed and a position of at least one contact on the array determined using the filtered capacitance values. Other embodiments are also provided.

Abstract: Settling time for high-impedance conductive materials in capacitance touchscreen may be overcome by employed a series of mathematical or hardware implemented correction factors. Correction factors may allow for faster mutual capacitance measurement and enable greater noise performance for mutual capacitance panels.

Abstract: A capacitive sensor array may include a first set of sensor electrodes and a second set of sensor electrodes. Each of the second set of sensor electrodes may intersect each of the first set of sensor electrodes to form a plurality of unit cells each corresponding to a pair of sensor electrodes including one of the first set of sensor electrodes and one of the second set of sensor electrodes. Each point within each of the plurality of unit cells may nearer to a gap between the pair of sensor electrodes corresponding to the unit cell than to a gap between any different pair of sensor electrodes, and a first trace pattern within a first unit cell of the plurality of unit cells may be different from a second trace pattern within an adjacent unit cell of the plurality of unit cells.

Abstract: A semiconductor devices including non-volatile memories and methods of fabricating the same to improve performance thereof are provided. Generally, the device includes a memory transistor comprising a polysilicon channel region electrically connecting a source region and a drain region formed in a substrate, an oxide-nitride-nitride-oxide (ONNO) stack disposed above the channel region, and a high work function gate electrode formed over a surface of the ONNO stack. In one embodiment the ONNO stack includes a multi-layer charge-trapping region including an oxygen-rich first nitride layer and an oxygen-lean second nitride layer disposed above the first nitride layer. Other embodiments are also disclosed.

Abstract: A method of operating a touch-sensing surface may include determining a first plurality of contact locations including a first contact location, determining a second plurality of contact locations including a second contact location, performing a first correlation process for correlating the second contact location with the first contact location when the number of contacts is less than or equal to a first threshold number, and performing a second correlation process for correlating the second contact location with the first contact location when the number of contacts is greater than a second threshold number.

Abstract: An apparatus includes a transmission system configured to transmit a drive signal to a touch screen device. The apparatus also includes a reception system configured to integrate an output signal received from a touch screen device in response to the drive signals and to filter the integrated output signal to suppress noise in the output signal, wherein the reception system is configured to integrate the output signal for a period of time that is less than or equal to a signal period corresponding to the drive signal.

Abstract: Touch sensor methods, devices and systems are disclosed. One embodiment of the present invention pertains to a method comprising monitoring a finger movement along a touch sensing surface based on position data of a finger touching the touch sensing surface, where the position data is obtained by locating a position of a force applied by the finger in a coordinate of the touch sensing surface. In addition, the method comprises generating direction data associated with the finger movement if the finger movement travels for more than a threshold distance. Furthermore, the method comprises determining a finger gesture which corresponds to the finger movement using a lookup table having multiple preconfigured finger gestures based on the direction data.

Abstract: A memory device can include a random access memory array configured to store data values; a plurality of bi-directional ports, configured to transfer data values into and out of the memory device on rising and falling transitions of at least one access clock signal; and at least one address bus configured to receive at least a portion of address values to random access locations on rising and falling transitions a timing clock signal having the same frequency as the access clock signal.

Abstract: A touch screen is described. The touch screen is configured to have an array of conductive, optically transmissive sensor elements coupled to sensor circuitry. The sensor elements are disposed over a display to have a single layer of conductive, optically transmissive material positioned over pixels of the display.

Abstract: A device can include a molded housing having at least a first surface, and configured to contain electronic components; a capacitance sense structure attached to the first surface; and a capacitance sensing circuit comprising at least one integrated circuit device electrically coupled to the capacitance sense structure.

Abstract: A method and apparatus receive a plurality of signal values, the plurality of signal values responsive to an input object. The method and apparatus calculate at least one signal ratio value using the plurality of signal values and determine a position of the input object using the at least one signal ratio value.

Abstract: A device can include a controller interface having at least one controller data output configured to output read data, and at least one controller data input configured to receive write data; and a memory device interface having a write data output configured to transmit the write data on rising and falling edges of a periodic signal, and a read data input configured to receive the read data at a same transmission rate as the write data.

Abstract: Scaling a nonvolatile trapped-charge memory device and the article made thereby. In an embodiment, scaling includes multiple oxidation and nitridation operations to provide a tunneling layer with a dielectric constant higher than that of a pure silicon dioxide tunneling layer but with a fewer hydrogen and nitrogen traps than a tunneling layer having nitrogen at the substrate interface. In an embodiment, scaling includes forming a charge trapping layer with a non-homogenous oxynitride stoichiometry. In one embodiment the charge trapping layer includes a silicon-rich, oxygen-rich layer and a silicon-rich, oxygen-lean oxynitride layer on the silicon-rich, oxygen-rich layer. In an embodiment, the method for scaling includes a dilute wet oxidation to density a deposited blocking oxide and to oxidize a portion of the silicon-rich, oxygen-lean oxynitride layer.

Abstract: A capacitance sense system can include a capacitance sense input configured to receive an input signal that varies according to a sensed capacitance; an integrator/discharge circuit configured to integrate the input signal and discharge the integrated input signal toward the reference level in conversion operations; and a remainder retainer section configured to quantize the discharging of the integrated input signal, and retain any remainder of the integrated input signal that follows a quantization point for a next conversion by the integrator/discharge circuit.

Abstract: A method and apparatus for a reverse metal-insulator-metal (MIM) capacitor. The apparatus includes a lower metal layer, a bottom electrode, and an upper metal layer. The lower metal layer is disposed above a substrate layer. The bottom electrode is disposed above the lower metal layer and coupled to the lower metal layer. The upper metal layer is disposed above the bottom electrode. The upper metal layer comprises a top electrode of a metal-insulator-metal (MIM) capacitor.

Abstract: Apparatuses and methods of input attenuator circuits are described. One sensing circuit includes an attenuator circuit to receive a signal from an electrode of a sense array. The attenuator circuit is configured to attenuate input current of the signal. The attenuator circuit includes an attenuation matrix including an input terminal to receive the signal and multiple resistors. The attenuation matrix is configured to split the input current into an output current of the attenuation signal on a first output terminal and a second output current on a second output terminal. The attenuation matrix is to output the attenuated signal on the first output terminal to an integrator of the sensing circuit. The attenuator circuit also includes a buffer coupled between the attenuation matrix and the integrator. The buffer is configured to maintain a substantially same voltage at the first output terminal and the second output terminal.

Abstract: A delay cell architecture is provided herein with improved noise performance and increased output swing, while consuming less power and area than conventional delay cell architectures. In one embodiment, the delay cell described herein may include a pair of input transistors, a pair of cross-coupled transistors, a pair of current source transistors, at least one swing limiting transistor and an RC filter. The at least one swing limiting transistor is coupled between the output nodes of the delay cell for controlling the output swing and keeping the current source transistors in saturation. Phase-induced jitter is reduced by connecting the RC filter directly to the mutually-coupled source terminals of the current source transistors. Deterministic jitter is reduced by using a relatively large resistor and relatively small capacitor within the RC filter design. Such a design reduces the amount of area consumed by the delay cell without sacrificing noise performance.