Abstract: Non-volatile semiconductor memories and methods of fabricating the same to improve performance thereof are provided. In one embodiment, the method includes: (i) forming a gate for a non-volatile memory transistor on a surface of a substrate overlaying a channel region formed therein, the gate including a charge trapping layer; and (ii) forming a strain inducing structure over the gate of the non-volatile memory transistor to increase charge retention of the charge trapping layer. Preferably, the memory transistor is a silicon-oxide-nitride-oxide-silicon (SONOS) transistor comprising a SONOS gate stack. More preferably, the memory also includes a logic transistor on the substrate, and the step of forming a strain inducing structure comprises the step of forming the strain inducing structure over the logic transistor. Other embodiments are also disclosed.

Abstract: In an example embodiment, an apparatus includes a sensing device. The sensing device includes circuitry configured to sense self-capacitance and circuitry configured to sense mutual-capacitance, each configured to detect capacitance values corresponding to whether an object is proximate to a touch screen. The sensing device is configured to measure a first capacitance value using the self-capacitance circuitry during self-capacitance sensing operations and to measure a second capacitance value using the mutual-capacitance circuitry during mutual-capacitance sensing operations.

Abstract: Embodiments described herein provide capacitive sensing devices and methods. A substrate having a plurality of pairs of conductive traces formed thereon is provided. The pairs of conductive traces include first and second conductive traces having first and second opposing ends. A capacitance variation of a plurality of the first conductive traces and a plurality of the second conductive traces is measured. The capacitance variation of at least some of the second conductive traces is measured before the capacitance variation for all of the plurality of first conductive traces is measured. A position coordinate in a two-dimensional coordinate system on the capacitive sensing device is determined based on the measuring a capacitance variation of a plurality of the first conductive traces and a plurality of the second conductive traces.

Abstract: Apparatuses and methods of position calculation of a touch are described. One method obtains at a processing device touch data of a sense array, the touch data represented as multiple cells. The touch data is for a touch detected proximate the sense array. Noise may be detected on the sense array based on the touch data and a position calculation algorithm from multiple different position calculation algorithms is selected based on the detected noise. The position of the touch proximate the sense array is determined from the touch data based on the selected position calculation algorithm.

Abstract: A method for a non-volatile, ferroelectric random access memory (F-RAM) device that includes a ferroelectric capacitor aligned with a preexisting structure is described. In one embodiment, the method includes forming an opening in an insulating layer over a contact in a planar surface of a substrate to expose at least a portion of the contact. Next a self-aligned contact (SAC) is formed electrically coupling to the contact, the SAC medially located in the opening and proximal to a sidewall thereof. A ferroelectric spacer is then formed in the opening medially of the SAC, and a top electrode spacer formed in the opening over the insulating cap and medially of the ferroelectric spacer.

Abstract: A method includes providing a design interface to design a device schematic for a programmable device and receiving a placement of graphical objects in the device schematic, wherein the graphical objects represent components that are both internal and external to the programmable device being configured. The method further includes assigning the graphical objects into one of an internal domain and an external domain and displaying, by the processing device, the graphical objects from both the internal domain and the external domain in a single view of the design interface.

Abstract: Embodiments of the present invention are directed to a microcontroller device having a microprocessor, programmable memory components, and programmable analog and digital blocks. The programmable analog and digital blocks are configurable based on programming information stored in the memory components. Programmable interconnect logic, also programmable from the memory components, is used to couple the programmable analog and digital blocks as needed. The advanced microcontroller design also includes programmable input/output blocks for coupling selected signals to external pins. The memory components also include user programs that the embedded microprocessor executes. These programs may include instructions for programming the digital and analog blocks “on-the-fly,” e.g., dynamically. In one implementation, there are a plurality of programmable digital blocks and a plurality of programmable analog blocks.

Abstract: Embodiments of a method of integration of a non-volatile memory device into a MOS flow are described. Generally, the method includes: forming a dielectric stack on a surface of a substrate, the dielectric stack including a tunneling dielectric overlying the surface of the substrate and a charge-trapping layer overlying the tunneling dielectric; forming a cap layer overlying the dielectric stack; patterning the cap layer and the dielectric stack to form a gate stack of a memory device in a first region of the substrate and to remove the cap layer and the charge-trapping layer from a second region of the substrate; and performing an oxidation process to form a gate oxide of a MOS device overlying the surface of the substrate in the second region while simultaneously oxidizing the cap layer to form a blocking oxide overlying the charge-trapping layer. Other embodiments are also disclosed.

Abstract: A liquid crystal display (LCD) driving system includes a reference voltage generator to generate a plurality of reference voltages. The LCD driving system also includes a plurality of drive buffers to generate drive voltages according to at least one of the reference voltages, and to drive at least a portion of a liquid crystal display to present data according to the drive voltages.

Abstract: A fast block write command includes providing an RFID tag having a memory, and using a stored address pointer to point to a known address in the memory, wherein the stored address pointer points to a starting address at a known safe block in the memory. The method is performed without an intermediate buffer. The received data is written to the known safe block and a cyclic redundancy check is computed on the received data. If the cyclic redundancy check matches, the received data is retained and the stored address pointer is updated. If the cyclic redundancy check does not match, the stored address pointer is kept for a future write operation. Further block writes can be disallowed after an initial successful block write.

Abstract: A method for fabricating a non-volatile, ferroelectric random access memory (F-RAM) device is described. In one embodiment, the method includes forming an opening in an insulating layer over a surface of a substrate, and forming bottom electrode spacers proximal to sidewalls of the opening. Next, a ferroelectric dielectric layer is formed in the opening over the surface of the substrate and between the bottom electrode spacers, and a pair of top electrodes is formed within the opening comprising first and second side portions displaced laterally from respective ones of the bottom electrode spacers by the ferroelectric dielectric layer.

Abstract: A stylus having a transmit drive circuit configured to transmit a signal to a capacitance sensor via capacitive coupling between the stylus and a capacitive sense array which is coupled to the capacitance sensor, which is configured to synchronize to the stylus, the stylus being configured to act as a timing master.

Abstract: A nonvolatile charge trap memory device is described. The device includes a substrate having a channel region and a pair of source/drain regions. A gate stack is above the substrate over the channel region and between the pair of source/drain regions. The gate stack includes a multi-layer charge-trapping region having a first deuterated layer. The multi-layer charge-trapping region may further include a deuterium-free charge-trapping layer.

Abstract: A semiconductor structure and method to form the same. The semiconductor structure includes a substrate having a non-volatile charge trap memory device disposed on a first region and a logic device disposed on a second region. A charge trap dielectric stack may be formed subsequent to forming wells and channels of the logic device. HF pre-cleans and SC1 cleans may be avoided to improve the quality of a blocking layer of the non-volatile charge trap memory device. The blocking layer may be thermally reoxidized or nitridized during a thermal oxidation or nitridation of a logic MOS gate insulator layer to densify the blocking layer. A multi-layered liner may be utilized to first offset a source and drain implant in a high voltage logic device and also block silicidation of the nonvolatile charge trap memory device.

Abstract: A touch sense controller configured to be coupled to a touch sense array is disclosed. The touch sense controller includes programmable logic that includes programmable logic elements configured to manage measurement of capacitance associated with the touch sense array.

Abstract: In one embodiment, an application design method includes identifying one or more application objects selected by a user when designing an application and identifying dependencies associated with the selected objects. The method further includes duplicating the selected objects and the associated dependencies. In another embodiment, the one or more objects comprise at least one of a valuator, an input and an output.

Abstract: System and method for optimizing the consumption of power while maintaining performance in capacitive sensor arrays. A limited sensing area is used to improve the update rate and sensitivity of a row/column array of capacitive sensors. According to one embodiment, a method is provided for scanning a plurality of capacitive sensors by: detecting a stimulus in the field of capacitive sensors, scanning the field of capacitive sensors to determine the position of the stimulus. Once the position of the stimulus is determined, a subsection of the field comprising window corresponding to the position of the stimulus remains activated while the remaining sensors in the field are deactivated.

Abstract: A memory device can include first sense amplifiers coupled to bit lines of a memory array in a first access period and de-coupled from the bit lines in a first sense period, the first sense amplifiers configured to amplify data signals from the memory array in the first sense period; and second sense amplifiers coupled to the bit lines in a second access period that follows the first access period and configured to amplify data signals from the memory cell array in a second sense period that overlaps the first sense period.

Abstract: A power supply includes a source signal generating circuit, an output stage, and a feedback stage. The power supply further includes a replica stage configured to replicate a response of the output stage to the source signal, and an output regulator coupling the replica stage to the output stage, configured to adjust a feedback signal to the source signal generating circuit by shunting the feedback stage when a loaded output stage response does not match a response of the replica stage to the source signal.

Abstract: A non-volatile memory and methods of operating the same to reduce disturbs is provided. In one embodiment, the method includes coupling a first positive high voltage to a first global wordline in a first row of an array of memory cells, and coupling a second negative high voltage (VNEG) to a first bitline in a first column of the array to apply a bias to a non-volatile memory transistor in a selected memory cell to program the selected memory cell. A margin voltage having a magnitude less than VNEG is coupled to a second global wordline in a second row of the array, and an inhibit voltage coupled to a second bitline in a second column of the array to reduce a bias applied to a non-volatile memory transistor in an unselected memory cell to reduce program disturb of data programmed in the unselected memory cell due to programming.