Abstract: A method for using a slider-based capacitive sensor to implement a user interface having discrete buttons. Button locations are designated on a slider-based capacitive sensor having at least two conductive traces such that a user input at any button location results in a capacitance change in the conductive traces. Locations of inputs are distinguishable by ratios between the capacitance changes of the conductive traces, which can be correlated to a particular button location. Ratio ranges corresponding to areas covered by each button are used to identify which button has received an input.

Abstract: An F-RAM authenticating memory device and method providing secure mutual authentication between a Host system and a memory in order to gain read/write access to the F-RAM user memory contents. The device and technique of the present invention uses an Advanced Encryption Standard AES128 encryption module in conjunction with a true hardware random number generator and basic exclusive OR (XOR) functions in order to achieve a secure algorithm with a relatively small amount of processing. Due to inherently faster write times than that of conventional floating gate non-volatile memory technologies, the use of F-RAM significantly reduces the time available to interfere with a critical security parameter (CSP) update. Moreover, unlike floating gate technologies, F-RAM's read vs. write current signature is balanced making it less prone to side channel attacks while also providing relatively faster erase times.

Abstract: Techniques for determining resistances of analog routes in electronic designs are described herein. In an example embodiment, a computer system receives first user input that indicates, in a user interface, a first component in an electronic design. The electronic design has been placed and routed for a programmable target device. The computer system receives second user input that selects, in the user interface, a particular component from one or more second components of the electronic design, where the one or more second components have analog connectivity to the first component. The computer system determines a resistance value of an analog route between the first component and the particular component, and displays the resistance value in association with the analog route in the user interface.

Abstract: A method includes powering multiple touch sensors using DC power derived from an AC power signal; monitoring the AC power signal and producing from the AC power signal a trigger signal that occurs repeatedly at a predetermined point in a cycle of the AC power signal; and initiating a scan of the touch sensors when the trigger signal occurs during each cycle of the AC power signal.

Abstract: Techniques for hard press rejection are described herein. In an example embodiment, a touch area on a sensor array is determined, where the touch area corresponds to a detected object and is associated with multiple signal values. A slope value for the detected object is computed based on a ratio of a signal distribution value in the touch area to a metric indicating a size of the touch area with respect to the sensor array. The slope value is compared to a threshold in order to determine whether to accept or to reject the detected object, and the detected object is rejected based on the comparison.

Abstract: A first integration capacitor stores charge from a positive signal portion. A second integration capacitor stores charge from negative signal portion. The voltage across the first and second integration capacitors is measured differentially. The presence of a conductive object proximate to a capacitance sensing element is detected based on the measured differential voltage between the first and second integration capacitors.

Abstract: The threshold voltages of particular nonvolatile memory cells on a word line are selectively increased on a column by column (cell by cell) basis. A selective program is performed on some of the cells, and simultaneously a program inhibit on other of the cells, resulting in all of the cells having a threshold voltage that falls between a minimum acceptable value and a maximum acceptable value.

Abstract: An electrostatic discharge (ESD) detector is coupled to the input voltage, and includes a voltage modulated input capacitance Cj configured to decrease as the input voltage increases. An output pulse generator is coupled to an output of the detector, and configured to amplify the output of the detector. An ESD protection switch is coupled to turn on upon application of an output pulse from the output pulse generator.

Abstract: A Programmable System on a Chip Hub (PHUB) is configured to enable master processing elements within the PHUB to simultaneously access peripherals on different busses. The master processing elements include a Central Processing Unit (CPU) interface configured to decode addresses received from a CPU and configure the PHUB to connect signaling from the CPU to one of the multiple busses associated with the address. A second one of the master processing elements is a Direct Memory Access Controller (DMAC) source engine configured to conduct Direct Memory Access (DMA) reads. A third one of the master processing elements is a DMAC destination engine configured to conduct DMA writes independently of the CPU interface.

Abstract: A memory apparatus may include one or more cache memory integrated circuit (ICs), each of which may have compare circuitry that compares a received address with stored compare values, a cache memory that provides cached data in response to the compare circuitry, a controller interface having at least address and control signal input terminals, and a module output connection having at least address and control signal output terminals corresponding to the address and control signal input terminals.

Abstract: Flash memory devices and systems are provided. One flash memory device includes an n-channel metal oxide semiconductor field-effect transistor (nMOSFET), a silicon-oxide-nitride-oxide silicon (SONOS) transistor coupled to the nMOSFET, and an isolated p-well coupled to the nMOSFET and the SONOS transistor. A flash memory system includes an array of memory devices divided into a plurality of paired sectors, a global bit line (GBL) configured to provide high voltage to each respective sector during erase and program operations coupled to each of the plurality of sectors, and a plurality of sense amplifiers coupled between a respective pair of sectors. Methods for operating a flash memory are also provided. One method includes providing high voltage, via the GBL, to the paired sectors during erase and program operations and providing low voltage, via a local bit line, to each memory device during read operations.

Abstract: A method for driving a load includes driving a load to an initial voltage within a voltage window, the voltage window based on an input voltage and an offset voltage, and driving the load to approximately the input voltage.

Abstract: A capacitive sensor includes a switching capacitor circuit, a comparator, and a charge dissipation circuit. The switching capacitor circuit reciprocally couples a sensing capacitor in series with a modulation capacitor during a first switching phase and discharges the sensing capacitor during a second switching phase. The comparator is coupled to compare a voltage potential on the modulation capacitor to a reference and to generate a modulation signal in response. The charge dissipation circuit is coupled to the modulation capacitor to selectively discharge the modulation capacitor in response to the modulation signal.

Abstract: A memory device can include a plurality of double data rate data (DDR) ports, each configured to receive write data and output read data on a same set of data lines independently and concurrently in synchronism with at least a first clock signal; an address port configured to receive address values on consecutive, different transitions of a second clock, each address value corresponding to an access on a different one of the data ports; and a memory array section comprising a plurality of banks, each bank providing pipelined access to storage locations therein.

Abstract: An embodiment of a capacitance measurement circuit may include multiple switches, a first node coupled with a first electrode and coupled with at least a first switch of the multiple switches, and a second node coupled with a second electrode and coupled with at least a second switch of the multiple switches, where the multiple switches are configured to reduce an influence of a self-capacitance of the first electrode and a self-capacitance of the second electrode on an output signal during measurement of a mutual capacitance between the first electrode and the second electrode, and where the multiple switches are configured to reduce an influence of the mutual capacitance on the output signal during measurement of at least one of the self-capacitance of the first electrode and the self-capacitance of the second electrode.

Abstract: Embodiments of a capacitance sensing system including an integrating amplifier and methods for operating the same to provide a higher slew rate and bandwidth are described. In one embodiment, the integrating amplifier comprises an input stage including an inverting input coupled to an electrode of a capacitor to sense a capacitance and a non-inverting input coupled to a reference potential, and an output stage including a compensating capacitor coupled to an output. The compensating capacitor comprises two smaller capacitors coupled in parallel and a switching element configured to open when the integrating amplifier is operated in a RESET mode decoupling one of the two smaller capacitors from the output to decrease capacitance of the compensating capacitor.

Abstract: A capacitive sensor includes a switching capacitor circuit, a comparator, and a charge dissipation circuit. The switching capacitor circuit reciprocally couples a sensing capacitor in series with a modulation capacitor during a first switching phase and discharges the sensing capacitor during a second switching phase. The comparator is coupled to compare a voltage potential on the modulation capacitor to a reference and to generate a modulation signal in response. The charge dissipation circuit is coupled to the modulation capacitor to selectively discharge the modulation capacitor in response to the modulation signal.

Abstract: An apparatus for and method of resolving multiple centroids from data received from a multi-touch sensor device are described.

Abstract: A display interface buffer includes a general purpose memory to store data capable of being displayed on a panel, a plurality of display drivers to receive data from the general purpose memory, each of the display drivers to drive a different portion of the panel with the data, and processor or a direct memory access controller to access data in the general purpose memory and to provide the data to the display drivers for presentation on the panel.

Abstract: A circuit for charging a capacitive load to a reference voltage in a capacitive sensor measurement circuit includes a reference buffer, a boost buffer, and drive logic. The reference buffer and the boost buffer are coupled with the capacitive load to be charged. The boost buffer first charges the capacitive load towards the reference voltage at a first rate of charging, and then ceases charging. The reference buffer subsequently continues charging at a slower second rate to settle the voltage across the capacitive load to within a tolerable range of the reference voltage.