Abstract: The present invention advantageously provides a substantially planarized semiconductor topography and method for making the same by selectively etching a dielectric layer to form a plurality of posts surrounded by trenches. The trenches are filled with a conductive material, such as a metal, deposited to a level spaced above the upper surfaces of the dielectric layer and the posts. The surface of the conductive material is then polished to a level substantially coplanar with the upper surfaces of the dielectric layer and the posts. Advantageously, the polish rate of the conductive material above the trenches is substantially uniform. In this manner, the topological surface of the resulting interconnect level is substantially void of surface disparity.

Abstract: A microcontroller is disclosed that includes a crystal oscillator circuit that is programmable to provide multiple different levels of startup current. In the present embodiment, the crystal oscillator circuit includes logic devices for receiving programming indicating one of a plurality of different startup current levels and a resistor chain. The logic devices are coupled to the resistor chain for controlling the resistance of the oscillator circuit such that, upon receiving programming indicating a particular startup current level, the crystal oscillator circuit generates a corresponding startup current. In addition, the crystal oscillator circuit includes provision for selecting one of a plurality of different levels of capacitance. Furthermore, the crystal oscillator circuit includes a pass gate that includes circuitry for assuring predetermined startup conditions are met. A feedback loop that includes an amplifier provides for steady-state operations that have low power consumption.

Abstract: An apparatus including a first circuit, a second circuit, and a third circuit. The first circuit may be configured to generate a first signal having a first frequency. The second circuit may be configured to generate a second signal having a second frequency that is generally a function of a process variation. The third circuit may be configured to control a process variation sensitive parameter in response to the first and second signals.

Abstract: A device having two or more programmable logic devices within an assembly apparatus. A first programmable logic device may be configured to have (i) a first signal interface and (ii) a second signal interface. A second programmable logic device may be configured to have (i) a third signal interface and (ii) a fourth signal interface. The assembly apparatus is generally configured to (i) mount the first programmable logic device and (ii) mount the second programmable logic device. A first external contact may be connected to the first signal interface. A second external contact may be connected to the fourth signal interface. A direct connection may be provided between the second signal interface and the third signal interface.

Abstract: An apparatus comprising a digitally controlled oscillator and a frequency tuning array. The digitally controlled oscillator may be configured to finely tune an output signal having a frequency in response to a digital signal. The frequency tuning array may be configured to generate the digital signal.

Abstract: An apparatus and method for providing delamination-resistant, array type molding of chip laminate packages such that larger chip array block sizes may be employed. An advanced mold die provides multiple wells for the formation of ejector pin tabs to be formed integrally to the mold cap of a chip laminate package. The die further provides for an ejector pin hole to be located at each ejector pin tab such that the ejector pins, when pressed for release of the laminate package from the mold die, bear against the integrally formed pin tabs rather than against the substrate of the chip/substrate assembly. The placement of the ejector pins for bearing against the pin tabs precludes the loading of the interface within the laminate package between the mold cap and the chip/substrate assembly. Substantially reduced delamination of the chip laminate package is achieved allowing for the use of larger chip array block sizes and providing for a substantial reduction in chip laminate package moisture sensitivity.

Abstract: According to one embodiment, a method for programming a programmable logic device (PLD) may include reading configuration data from a memory device to program a first portion of a PLD to function as a data decompression circuit (304, 308). Compressed configuration data may then be read and decompressed by the first portion and used to program a second portion (310, 312, 315) with a user determined function. A first portion may then be reprogrammed with a user determined function (320, 324).

Abstract: A method is provided for processing a semiconductor topography. In particular, a method is provided for decreasing the threshold voltage magnitude of a first transistor being formed within the substrate while simultaneously increasing the threshold voltage magnitude of a second transistor being formed within the substrate. In some embodiments, a width of the first transistor may be larger than a width of the second transistor. In addition or alternatively, the method may include performing a first implantation corresponding to a threshold voltage magnitude above a desired value for the first transistor. The method may further include performing a second implantation to simultaneously lower the threshold voltage magnitude of the first transistor and raise a threshold voltage magnitude of the second transistor. In some embodiments, the method may include introducing dopants of a first conductivity type into a first transistor channel dopant region and a second transistor channel dopant region simultaneously.

Abstract: A method for determining device yield of a semiconductor device design, includes determining statistics of at least one MOSFET parameter from a gate pattern, and calculating device yield from the at least one MOSFET parameter. The method provides a direct simulation link from device layout to device performance.

Abstract: A parallel sampling phase detector with linear output response. The parallel sampling phase detector for use in data recovery. The device includes a voltage controlled oscillator (VCO) that generates ten separate phase signals using a five stage ring oscillator. Five linear phase detectors are employed in the device, each operating during one of five “window” intervals. The “window” intervals are non-overlapping, and are generated using preselected ones of the VCO output phases. The linear phase detectors each generate, respectively, a variable pulsewidth pump up signal wherein the pulsewidth of the pump up signal is proportional to a phase difference between the input data signal applied to the phase detector, and the output phase signals of the VCO. Each phase detector also generates a pump down signal that has a fixed pulsewidth.

Abstract: An apparatus comprising a first circuit and a second circuit. The first circuit may be configured to generate an output signal in response to a reference input and a feedback signal. The second circuit may be configured to generate the feedback signal according to a plurality of moduli in response to the output signal, a first control signal and a second control signal. The frequency of the output signal may be modulated in response to the second control signal.

Abstract: A circuit configured to (i) receive a differential signal pair and (ii) generate one or more common mode signals. The circuit generally provides a large impedance on each input line.

Abstract: An apparatus comprising a delay line and a control circuit. The delay line may be configured to generate an output signal in response to an input signal and one or more control signals. The delay line may be self-clocked. A phase of the output signal may be adjusted in response to the one or more control signals. The control circuit may be configured to generate the one or more control signals in response to the input signal and the output signal.

Abstract: A non-volatile SRAM cell including (i) a nonvolatile memory element, (ii) a volatile memory element coupled to the nonvolatile memory element and (iii) a gate circuit coupled to the nonvolatile memory element. The gate circuit is configured to transfer data to and from a first input/output line into the volatile memory element.

Abstract: A prebuffer circuit configured to generate one or more output control signals in response to one or more current sources and an input signal. The one or more output control signals may reduce a process dependent charge to discharge skew.

Abstract: Two different regions of a semiconductor substrate are implanted with dopants/ions. The implantation may occur though a sacrificial oxide layer disposed over the substrate. Following implantation in one or both regions, the substrate may be annealed and the sacrificial oxide layer removed. An oxide layer is then grown over the implanted regions of the substrate. For some embodiments, the substrate may be implanted with arsenic and/or with phosphorus. Further, the anneal may be performed for approximately 30 to 120 minutes at a temperature between approximately 900° C. and 950° C.

Abstract: The invention provides apparatus for the transfer of data/command between a master controller and one or more client controllers. The apparatus in accordance with the invention includes a bi-directional data bus for conveying plural bits of data or command between a master controller and one or more client controllers; direction signal controlling the direction in which data or command bits are conveyed on the data bus as between the master controller and a connected one of the one or more client controllers; a pair of ready signals including a transmit ready signal asserted by a source of data or command bits placed on the data bus and including a receive ready signal asserted by a destination for the data or command bits placed on the data bus; and a clock signal for indicating the presence of valid data or command bits on the data bus on a leading or trailing edge thereof. Preferably, a command/data signal is also provided to indicate the type of information placed on the data bus by the source.

Abstract: An apparatus comprising a first programmable circuit configured to present (i) a first parallel data signal and (ii) a first control signal in response to one or more serial data signals and a second programmable circuit configured to generate a second parallel data signal in response to (i) the first parallel data signal, (ii) the first control signal and (iii) a second control signal.

Abstract: A spread spectrum clock generator comprising a spread spectrum modulation circuit and a control circuit. The spread spectrum modulation circuit may be configured to generate a clock signal in response to (i) a sequence of linearity ROM codes, (ii) a sequence of spread spectrum ROM codes, and (iii) a command signal. The control circuit may be configured to synchronize the command signal to a feedback signal. The sequence of linearity ROM codes and the sequence of spread spectrum ROM codes may be generated by predetermined mathematical formulas and optimized in accordance with predetermined criteria.

Abstract: A circuit comprising a plurality of gates and a plurality of control circuits. The plurality of gates may each have an output connected to an input of a next gate of the plurality of gates. The plurality of control circuits may be connected to a second input of one or more gates of the plurality of gates. The plurality of control circuits may simulate switching.