Abstract: A circuit comprising a plurality of gates and a plurality of control circuits. The plurality of gates may each have an output connected to an input of a next gate of the plurality of gates. The plurality of control circuits may be connected to a second input of one or more gates of the plurality of gates. The plurality of control circuits may simulate switching.

Abstract: A circuit and method are provided for ensuring a non-desired output state of a latch or flip-flop cannot be produced. The latch can be configured as a set dominant, reset dominant, or memory dominant circuit by simply placing programmed voltage values on select transistors of the latch. The programmed values will cause either the set input, the reset input, or both set and reset inputs to have a complimentary effect on the output signals even though the set and reset inputs are at the same logic level. The set, reset, and memory dominant circuit is identical in structure; however, the set, reset, and memory dominant features are derived solely by placing programmed values on corresponding transistors within the identical structure. A generic latch circuit can, therefore, be said to operate in one of three dominant ways depending on the programmed values chosen by a selector and fed to a prioritizer.

Abstract: A scalable routing architecture for high density programmable logic devices involves the utilization of a two-dimensional network of non-segmented routing channels to serve as global interconnects between clusters of logic blocks. Each cluster of logic blocks is a CPLD-like structure which includes a number of logic blocks connected together by a local interconnect. Logic signals that need to enter a cluster, either from an I/O pin or from another logic block of another cluster, do so by traversing from those sources though a channel interconnect. Similarly, logic signals produced by a cluster can be routed to an I/O pin or to another logic block of another cluster across one of the channels. A switch matrix is implemented at intersections between the channels to allow logic signals to be transferred between rows and columns of the channels.

Abstract: A pre-buffer circuit configured to generate one or more output control signals in response to a bandgap reference based control circuit. The one or more output control signals control output ON resistance and slew rate so as to limit variations in ringing and skew.

Abstract: An apparatus including a controller, a voltage supply circuit and a power management circuit. The controller may include one or more ports. The voltage supply circuit may be configured to generate an unregulated voltage supply. The power management circuit may be configured to receive the unregulated voltage supply and present a regulated power supply voltage to each of the one or more ports. In one example, the apparatus may be implemented in a Universal Serial Bus (USB) hub.

Abstract: A method and a system for supplying power to a microcontroller with a single cell battery. A power supply pump circuit may be incorporated with the microcontroller having dynamic interaction. The microcontroller sends its power requirements to the power supply pump circuit and in response, the power supply pump circuit controls the operating voltage with optimal efficiency. The dynamic update of power supply pump circuit results in an efficient use of the power supply pump circuit and thus results in a reduction of the number of dry cell batteries to only a single cell. Incorporation of the microcontroller and power supply pump circuit onto a single chip reduces the pin number requirements as well as the space required on the printed circuit board.

Abstract: A termination circuit for use on a conductor of a transmission line. The termination circuit generally comprises a first, second, third and fourth transistor. The first transistor may have (i) a first drain node couplable to the conductor, (ii) a first source node couplable to a first power source presenting a first reference voltage, and (iii) a first gate node. The second transistor may have (i) a second drain node couplable to the conductor, (ii) a second source node couplable to a second power source presenting a second reference voltage, and (iii) a second gate node. The third transistor (i) may have a third source node coupled to the first gate node and (ii) may be configured to bias the first gate node to a first voltage below the first reference voltage. The fourth transistor (i) may have a fourth source node coupled to the second gate node and (ii) may be configured to bias the second gate node to a second voltage above the second reference voltage.

Abstract: A device and a method are provided for isolating a circuit well from a substrate of the same conductivity type. In particular, an integrated circuit is provided which includes a circuit well arranged over a semiconductor substrate with no layer of opposite conductivity type arranged between the well and the substrate. The integrated circuit may further include a pair of isolation wells extending along opposite lateral boundaries of the circuit well. The isolation wells and circuit well may be adapted such that a single continuous depletion region underlying the circuit well may be formed upon application of an isolation voltage between the substrate and the pair of isolation wells. The formation of such a depletion region may beneficially isolate the circuit well from the underlying substrate.

Abstract: A method and system for serially communicating a stream of data characters having bit-interleaved framing information. One embodiment discloses a method for interleaving a single bit of a frame marker sequence to each data character to demarcate each of the data characters and then serializing the data. The transmitting device serially transmits the data characters with bit-interleaved framing at a high transmission bit rate, over a single communication link. The receiving device captures the data stream and de-serializes the data. It then locates the bit position of the character boundary by detecting a predetermined frame marker sequence located in the same bit position over consecutive data characters. The offset is used to frame the data. A character rate greater than 70 MHz can be realized and a bit transmission rate of greater than 1 Gbit/second can be achieved.

Abstract: An apparatus comprising a first circuit and a second circuit. The first circuit may be configured to generate one or more first control signals in response to (i) a clock signal and (ii) one or more second control signals. The second circuit may be (i) coupled to the first circuit via one or more path circuits and (ii) configured to present an output signal in response to the one or more first control signals. All of the one or more first control signals may have a preferred edge skew.

Abstract: An input buffer having a stable trip point over at least process skew and supply voltage variations includes a first inverter stage; a second inverter stage; and an arrangement for compensating for process skew and supply voltage variations. The compensating arrangement is disposed both in the pull-up and pull-down paths, and increases the conductivity of the pull-up path and decreases the conductivity of the pull-down path when the DC trip point of the input buffer falls below nominal. The compensating arrangement also decreases the conductivity of the pull-up path and increases the conductivity of the pull-down path when the DC trip point rises above nominal. The compensating arrangement may include at least one device disposed in each of the pull-up and pull-down paths. The conductivity of these devices may then be controlled by a reference signal that swings about the DC trip point responsive to at least process skew corners and variations in supply voltage.

Abstract: According to one embodiment, a programmable logic assembly (200) may include a nonvolatile memory devices (202-0 and 202-1) coupled to an associated volatile programmable logic device (PLD) (204). Each nonvolatile memory device (202-0 and 202-1) may store different configuration data for a volatile PLD (204). Upon a predetermined event, such as powerup or reset, one of the nonvolatile memory devices (202-0 and 202-1) may be selected and its configuration data read into a volatile PLD (204).

Abstract: The present invention advantageously provides a method for retaining a substantially transparent dielectric above alignment marks during polishing of the dielectric to ensure that the alignment marks are preserved for subsequent processing steps. According to an embodiment, alignment marks are etched into a semiconductor substrate. Thereafter, a pad oxide layer is deposited across the substrate surface, followed by the deposition of a first nitride layer. Isolation trenches which are deeper than the alignment mark trenches are formed spaced distances apart within the substrate. Optical lithography may be used to define the regions of the first nitride layer, the pad oxide layer, and the substrate to be etched. The isolation trenches thus become the only areas of the substrate not covered by the pad oxide layer and the first nitride layer. A substantially transparent dielectric, e.g., oxide, is then deposited across the semiconductor topography to a level spaced above the first nitride layer.

Abstract: A circuit comprising a memory array and a logic circuit. The memory array may be configured to read or write data in response to (i) one or more enable signals and (ii) one or more control signals. The logic circuit may be configured to generate the enable signals in response to one or more address signals. De-assertion of one or more of the enable signals generally reduces current consumption in the memory array.

Abstract: An apparatus comprising a first circuit, a deserializer circuit and a framer circuit. The first circuit may be configured to present a clock signal and a data signal having a second data rate in response to an input signal having a first data rate. The deserializer circuit may comprise (a) a parallel register bank configured to generate an output signal in response to (i) the clock signal, (ii) the data signal and (iii) one or more select signals and (b) a state machine configured to generate the one or more select signals in response to one or more control signals. The framer circuit may be configured to generate the one or more control signals in response to (i) one or more input control signals and (ii) the output signal.

Abstract: A method of forming metallic layers on a substrate includes the steps of forming a first layer including a first metal on the substrate; cooling the first layer for a period of time sufficient to suppress formation of an intermetallic phase; and forming a second layer including a second metal distinct from the first metal on the first layer. The cooling step decreases the roughness of the resultant stacked structure by suppressing the formation of an intermetallic phase layer between the two metallic layers and by suppressing “bumps” or other surface irregularities that may form at relatively reactive grain boundaries in the first layer.

Abstract: An apparatus configured to generate a signal used to refresh a memory cell in response to (i) a write signal, (ii) a global wordline signal, (iii) a block select signal, and (iv) one or more supply voltages.

Abstract: An embodiment of a memory cell includes a series of four substantially oblong parallel active regions, arranged side-by-side such that the inner active regions of the series include source/drain regions for p-channel transistors, and the outer active regions include source/drain regions for n-channel transistors. Another embodiment of the memory cell includes six transistors having gates substantially parallel to one another, where three of the gates are arranged along a first axis and the other three gates are arranged along a second axis parallel to the first axis. In another embodiment, the memory cell may include substantially oblong active regions arranged substantially in parallel with one another, with substantially oblong local interconnects arranged above and substantially perpendicular to the active regions.

Abstract: A method of synchronizing a clock signal to a data signal, comprising the steps of (A) detecting a first edge of the data signal, (B) determining a first value indicating a position of the first edge, (C) adding the first value to a second value, wherein the second value indicates a position of a second edge of the data signal and (D) adjusting the clock signal based on the result of step (C).

Abstract: A method of fabricating a semiconductor device (300) is disclosed. A low energy ion implantation (318) may form low voltage source and drain regions in a low voltage region (402-3) of a substrate. A low energy implant may also form a portion of source and drain regions in a high voltage region (402-2). A high energy ion implantation (322) may complete the formation of high voltage transistors in a high voltage region (402-2). A high voltage gate structure (418-2) may be exposed during a high energy ion implantation and mask a channel region.