Abstract: Architecture, circuitry, and methods are provided for producing a content addressable memory (CAM). The CAM includes one or more CAM cells arranged in an array. Each CAM cell is symmetrical about its x- and y-axis to form rows and columns of the array. Additionally, each CAM cell can use either SRAM or DRAM storage cells implemented in either a binary or ternary arrangement. If the CAM cell is a ternary SRAM design, then the cell size is no more than 4 microns by 1-½ microns, assuming a 0.15 micron critical dimension. Critical dimension is noted as the smallest resolvable size for the particular process being employed. The CAM cell utilizes a selection circuitry that will disable the compare circuit during times when a compare operation is not being performed. This will ensure the compare circuit will not consume power during, for example, a read or write operation.

Abstract: A layout architecture for a programmable logic device comprising one or more adjacent metal lines, a first circuit, and a second circuit. The one or more adjacent metal lines may each comprise a critical path. The first circuit may be configured to present an input signal to each of the one or more adjacent metal lines in response to a configuration signal. The second circuit may be configured to (i) receive a signal from at least one of the one or more adjacent metal lines selected in response to the configuration signal and (ii) generate an output signal in response to the received signal.

Abstract: An apparatus comprising a memory array having a first port and a one or more other ports and a control circuit configured to couple (i) a bitline of the first port to a corresponding bitline of the one or more other ports and (ii) a dataline of the first port to a corresponding dataline of the one or more other ports in response to the first port and the one or more other ports accessing a common address.

Abstract: An apparatus comprising a phase lock loop (PLL) and a charge pump. The PLL may be configured to generate an output signal in response to an input signal. The charge pump may be configured within the PLL and be configured to (i) pump-up the input signal, (ii) pump-down the input signal or (iii) enter tri-state in response to a control signal.

Abstract: According to one embodiment, a nonvolatile circuit (100) can include a volatile circuit portion (102) and a nonvolatile circuit portion (104). A vole portion (102) may have a first data node (114) and a second data node (116). A nonvolatile circuit portion (104) may include a nonvolatile device (128) that is connected to a first data node (114) by a recall device (124) and connected to a second data node (116) by store device (126). A recall device (124) may be enabled to recall the volatile circuit portion (102) to a particular state. A store device (126) may be enabled to program a nonvolatile device (128). Store and recall devices (126 and 124) can enable a recall operation to follow a store operation that does not invert data at first and second data nodes (114 and 116). A control device (122) can be included that enables margin testing of a nonvolatile device (128).

Abstract: A circuit comprising a current source, a first amplifier, and a second amplifier. The circuit may be used to provide for crossing point compensation of a CMOS driver as a function of a supply voltage. The current source may be configured to present a reference current. The first amplifier may be configured to (i) receive the reference current as a load, (ii) receive a first voltage, and (iii) present a second voltage responsive to the first voltage. The second amplifier may be configured to (i) receive the second voltage and (ii) change a current at a node responsive to the second voltage.

Abstract: A termination circuit for use on a conductor of a transmission line. The termination circuit generally comprises a first, second, third and fourth transistor. The first transistor may have (i) a first drain node couplable to the conductor, (ii) a first source node couplable to a first power source presenting a first reference voltage, and (iii) a first gate node. The second transistor may have (i) a second drain node couplable to the conductor, (ii) a second source node couplable to a second power source presenting a second reference voltage, and (iii) a second gate node. The third transistor (i) may have a third source node coupled to the first gate node and (ii) may be configured to bias the first gate node to a first voltage below the first reference voltage. The fourth transistor (i) may have a fourth source node coupled to the second gate node and (ii) may be configured to bias the second gate node to a second voltage above the second reference voltage.

Abstract: A method to automatically generate a single and/or multistage PIM, comprising the steps of (A) generating a schematic that matches a layout of the PIM, (B) optionally generating a first stage and a second stage for the PIM, depending on one or more electronic and/or physical properties of the PIM and (C) automatically placing and connecting a non-regular structure at an input and/or output of a stage of the PIM.

Abstract: A logic section of a programmable logic device comprising a first circuit and a second circuit. The first circuit may be configured to (i) implement user defined programmable logic and (ii) generate an output in response to a first input and a second input. The second circuit may be configured to generate the second input in response to the output, a third input, and a fourth input.

Abstract: A circuit having an address circuit and a memory. The address circuit may be configured to (i) receive an address as a parallel input signal and as a serial input signal, (ii) present the address as an output address in one of an asynchronous mode, a synchronous mode, and a shift mode, and (iii) change the second address one by unit in a counter mode. The memory may be configured to receive the output address.

Abstract: An apparatus for combining stages of a multiplexer and a mixer into a single stage. The apparatus provides a first circuit configured to generate a first output signal in response to (i) one or more a input signals and (ii) one or more first select signals, a second circuit configured to generate a second output signal in response to (i) one or more a input signals and (ii) one or more second select signals, and a first and second mix signal configured to provide a third output signal in response to the first and second output signals. The third output signal provides a portion of the first and second output signals controlled by the first and second mix signals.

Abstract: A method and system for routing signals through interconnect matrices in a programmable logic device such that downstream routing failures can be reduced. In one embodiment, the invention is used to improve routing in complex programmable logic devices or CPLDs, however, the invention can be applied to other programmable devices and routing resources. In routing a set of signals through an upstream interconnect matrix or PIM, the method determines a set of high priority signals. In routing the upstream PIM, the method uses a Maximum Bipartite Matching process in one embodiment to route the original signals once. The duplicated high priority signals are then routed and sent to the input array of the downstream interconnect matrix along with the originally routed signals. From the originally routed signals and the duplicate signals, the downstream interconnect matrix routes each unique signal once and only once depending on the available routing resources.

Abstract: A method for lowering power consumption of a Universal Serial Bus (USB) device, comprising the steps of (A) detecting a frame comprising one or more indicators from an input data stream and (B) waking the USB device or continually operating in a suspend/sleep mode, in response to the one or more indicators.

Abstract: An apparatus comprising a pump up circuit, a pump down circuit and an output circuit. The pump up circuit may be configured to generate a pump up signal and receive a first source bias. The pump down circuit may be configured to generate a pump down signal and receive a second source bias. The output circuit may be configured to receive the pump up and pump down signals and generate an output signal. The pump up circuit may be configured to precharge the first source bias and the pump down circuit may be configured to precharge the second source bias signal.

Abstract: The invention relates to a transistor having a ramped gate oxide thickness, a semiconductor device containing the same and a method for making a transistor.

Abstract: A method of forming a semiconductor structure includes filling a trench in a first dielectric layer with a gate material. The first dielectric layer is on a semiconductor substrate, and spacers are in the trench. A semiconductor device formed from this structure includes notched gates.

Abstract: The present invention concerns a method for reducing power consumption in a device, comprising the steps of (A) receiving one or more packets, (B) determining a type of each of the one or more packets and (C) suspending, waking, or partially waking the device in response to a particular type of packet.

Abstract: A metal silicide (e.g., WSix) layer an integrated circuit is etched in a Cl2/O2 environment having an O2 concentration of greater than or equal to 25% by volume. This environment may be provided at a pressure of approximately 2-40 mili-Torr, in a reactor with a source power of approximately 200-2000 Watts and a bias power of approximately 30-400 Watts for approximately 30 seconds. In one particular example, the Cl2/O2 environment includes approximately 45 sccm Cl2 and 30 sccm O2. The metal silicide layer is fully etched without etching an underlying poly-silicon layer. The metal silicide layer may be a portion of a gate structure.

Abstract: A method for providing orderly service delivery to clients over a network, comprising the steps of (A) requesting data from a location and (B) if a denial is received, notifying a particular client of availability.

Abstract: A metallization structure and method for fabricating such a metallization structure are presented. The present method preferably includes forming a void within a metal layer. The void may have a void pressure level, which is preferably approximately equal to the pressure in a deposition chamber in which the metal layer is arranged when the void is formed. Subsequently, the void may be collapsed by increasing a pressure level outside of the void to a collapsing pressure level significantly above the void pressure level. Increasing a pressure level outside of the void preferably includes increasing a pressure level within the deposition chamber to a collapsing pressure sufficient to collapse the void. A metallization structure formed by such a process may be substantially void-free, even in narrow, high aspect ratio metallization cavities.