Abstract: A layout system automatically generates via definitions for a routing tool based on manufacturability of vias based on the via definitions. A physical verification tool of the system applies a set of preliminary via definitions to an integrated circuit test design at each of a plurality of offsets from a plurality of via locations to generate a set of candidate via definitions. Candidate via definitions that violate one or more design rules are discarded. A hierarchy constructor tool ranks the resulting candidate via definitions based on a combination of their manufacturability and frequency of applicability in the test design, and a predefined number of the candidate via definitions are selected based on their ranking. These selected via definitions can be used by a routing tool to generate a layout for another (non-test) integrated circuit device.

Abstract: A protection circuit and a gate driving circuitry. The protection circuit is for protecting a p-type back-to-back MOS switch. The circuit receives an input driving signal and provides a driving output signal to common gates of the p-type back-to-back MOS switch. The circuit comprises a driving signal insulation switch for disconnecting the common gate of the p-type back-to-back MOS switch from the received input driving signal when the voltage of the common gates is larger than the supply voltage of the circuit. The circuit further comprises a gate source coupling switch for coupling a voltage received at the common source of the p-type back-to-back MOS switch to the common gate if a received voltage at the common sources is larger than a reference voltage Vref.

Abstract: A device includes an amplifier having a first path and a second path and a first variable attenuator connected to the first path. The device includes a controller coupled to the first variable attenuator. The controller is configured to determine a magnitude of an input signal to the amplifier. When the magnitude of the input signal is below a threshold, the controller is configured to set an attenuation of the first variable attenuator to a first attenuation value. When the magnitude of the input signal is above the threshold, the controller is configured to set the attenuation of the first variable attenuator to a second attenuation value. The second attenuation value is less than the first attenuation value.

Abstract: A semiconductor device having a plurality of on-chip processors, a plurality of key RAMs, a plurality of key RAM controllers, a fuse bank, a fuse bank controller and a boot controller is described. The boot controller is arranged to, in a first programming stage, allocate a first array of fuses in the fuse bank in dependence on the size of a first device key for storing the first device key in the fuse bank, and, during boot-time, provide the first device key to a first key RAM controller. The fuse bank controller is arranged to program the first array of fuses with the first device key in the first programming stage, provide the first device key to the boot controller during boot-time, and prevent access to the first device key in the fuse bank during run-time. The first key RAM controller is arranged to, during boot-time, store the first device key in the first key RAM, and, during run-time, restrict access to the first device key in the first key RAM to exclusive access by the first on-chip processor.

Abstract: The embodiments described herein can provide a variable reluctance sensor (VRS) interface that may reduce the probability of erroneous transitions in a resulting generated detect signal. As such, the VRS interface can improve the accuracy of position and/or motion determinations, and thus can improve the performance of a wide variety of devices that use variable reluctance sensors. To facilitate this, the VRS interface includes a pre-processing circuit configured to modify a VRS signal to prevent the modified VRS signal from dropping below a threshold value and generating erroneous transitions in the detect signal pulse between leading and lagging edges of a tooth. In one embodiment the pre-processing circuit comprises a peak and hold circuit. In another embodiment the pre-processing circuit comprises a resistor-capacitor circuit. In either case the pre-processing circuit can prevent erroneous transitions in the detect signal and thus may improve the performance and accuracy of the system.

Abstract: Assembling a surface mount semiconductor device includes providing a lead frame structure with peripheral leads and additional bottom face contacts integral with frame members. Outer portions of the bottom face contact members are interposed between inner portions of adjacent pairs of the peripheral leads. A package body is formed by encapsulating the lead frame structure in which the frame members are positioned outside a side edge surface. The peripheral leads and the bottom face contact members project between the side edge surface of the package body and the frame members. The frame members are cut and the peripheral leads and the bottom face contact members are separated and electrically isolated from each other.

Abstract: The embodiments described herein include systems with a variable reluctance sensor (VRS) interface and methods of their operation that may reduce the probability of erroneous transitions in a resulting generated detect signal. As such, the VRS interface can improve the accuracy of position and/or motion determinations, and thus can improve the performance of a wide variety of devices that use variable reluctance sensors. In one embodiment the VRS interface uses a comparator with hysteresis to generate a trailing edge signal. In another embodiment the VRS interface uses bias voltages to reduce the probability of erroneous transitions in a trailing edge signal. In either case the VRS interface can prevent erroneous transitions in the detect signal and thus may improve the performance and accuracy of the system.

Abstract: A device includes a semiconductor substrate, source and drain regions disposed in the semiconductor substrate, having a first conductivity type, and laterally spaced from one another, and a composite body region disposed in the semiconductor substrate and having a second conductivity type. The composite body region includes a first well region that extends laterally across the source and drain regions and a second well region disposed in the first well region. The drain region is disposed in the second well region such that charge carriers flow from the first well region into the second well region to reach the drain region. The second well region includes dopant of the first conductivity type to have a lower net dopant concentration level than the first well region. A pocket may be disposed in a drain extension region and configured to establish a depletion region along an edge of a gate structure.

Abstract: A device includes a semiconductor substrate, emitter and collector regions disposed in the semiconductor substrate, having a first conductivity type, and laterally spaced from one another, and a composite base region disposed in the semiconductor substrate, having a second conductivity type, and including a base contact region, a buried region through which a buried conduction path between the emitter and collector regions is formed during operation, and a base link region electrically connecting the base contact region and the buried region. The base link region has a dopant concentration level higher than the buried region and is disposed laterally between the emitter and collector regions.

Abstract: A clock distribution module for a digital synchronous system is described. The clock distribution module comprising a first node arranged to comprise a clock signal comprising a propagation delay relative to a reference clock signal, at least one further node arranged to comprise a clock signal comprising a propagation delay relative to the reference clock signal corresponding to that of the first node, and a clock configuration module. The clock configuration module is arranged to receive at least one indication of clock skew between the first node and at least one further node of the clock distribution module, and to selectively couple the first node to the at least one further node based at least partly on the at least one indication of clock skew there between.

Abstract: A surface mount semiconductor device is assembled by positioning an array of semiconductor dies with an array of metallic ground plane members between and beside the semiconductor dies. The arrays of dies and ground plane members are encapsulated in a molding compound. A redistribution layer is formed on the arrays of dies and ground plane members. The redistribution layer has an array of sets of redistribution conductors within a layer of insulating material. The redistribution conductors interconnect electrical contacts of the dies with external electrical contact elements of the device. As multiple devices are formed at the same time, adjacent devices are separated (singulated) by cutting along saw streets between the dies. The molding compound is interposed between tie bars of the ground plane members and the insulating material of the redistribution layer in the saw streets, and at the side surfaces of the singulated devices.

Abstract: A mechanism is provided for extending useable lifetimes of semiconductor devices that are subject to trapped charge carriers in a gate dielectric. Embodiments of the present invention provide heat to the gate dielectric region from one or more sources, where the heat sources are included in a package along with the semiconductor device. It has been determined that heat, when applied during a period when the channel region of a transistor is in accumulation mode or is not providing a current across the channel, can at least partially recover the device from trapped charge carrier effects. Embodiments of the present invention supply heat to the affected gate dielectric region using mechanisms available where the semiconductor device is used (e.g., in the field).

Abstract: A Quad Flat Pack (QFP) type semiconductor device includes four corner tie bars that, instead of being trimmed, are used for power and/or ground connections, and alternatively, to control mold flow during the encapsulation step of the assembly process.

Abstract: A method and system for reducing power consumption of an integrated circuit with an EDA tool by analyzing and modifying a layout design having a plurality of nets across multiple metal layers. The method includes identifying long nets in the layout design, determining an interconnect capacitance of each of the long nets, determining a net level switching activity of each of the long nets, generating a high power impact list using the interconnect capacitance and the switching activity of each of the long nets, modifying a metal spacing of the long nets listed in the high power impact list.

Abstract: A video information processing system including a processing circuit and a deblocking filter. The processing circuit provides video information including a chroma component and a luma component. The deblocking filter has an input receiving the video information and an output providing filtered video information, and is configured to selectively disable chroma deblock filtering while luma deblock filtering is enabled. The processing circuit may include a video encoder or a video decoder. The processing circuit may further include control logic providing a control signal to disable chroma deblock filtering within either or both the encoder and decoder. The video encoder may incorporate control information in the output bitstream to control deblock filtering in the downstream decoder to maintain consistency between the encoder and the decoder.

Abstract: An integrated circuit comprises clock gating circuitry comprising at least one gating component located within a clock distribution network and arranged to enable at least one part of the clock distribution network to be gated, and gating control circuitry arranged to cause the at least one gating component to disable the at least one part of the clock distribution network upon certain conditions being fulfilled. The clock gating circuitry further comprises clock gating disabling circuitry configurable to enable the gating of the at least one part of the clock distribution network to be disabled.

Abstract: An approach is provided in which a power design verification system retrieves a power intent data corresponding to a power design, which identifies the power design's power modes and power mode transition conditions. The power design verification system selects one of the power mode transition conditions, which identifies input signals that invoke a transition from a first power mode to a second power mode. In turn, the power design verification system generates simulation stimuli based upon the identified input signals and simulates the power design utilizing the generated simulation stimuli accordingly.

Abstract: An analog to digital converter (ADC) includes a clock-halting circuit that is enabled by an externally generated trigger signal. The clock-halting circuit halts an input clock signal to the ADC for a predetermined time period and resumes the input clock signal to the ADC when the predetermined time period ends.

Abstract: A store gathering policy is enabled or disabled at a data processing device. A store gathering policy to be implemented by a store buffer can be selected from a plurality of store gathering polices. For example, the plurality of store gathering policies can be constrained or unconstrained. A store gathering policy can be enabled by a user programmable storage location. A specific store gathering policy can be specified by a user programmable storage location. A store gathering policy can be determined based upon an attribute of a store request, such as based upon a destination address.

Abstract: Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a first vertical drift region of semiconductor material, a second vertical drift region of semiconductor material, and a buried lateral drift region of semiconductor material that abuts the vertical drift regions. In one or more embodiments, the vertical drift regions and buried lateral drift region have the same conductivity type, wherein a body region of the opposite conductivity type overlies the buried lateral drift region between the vertical drift regions.