Patents Assigned to Freescale
  • Publication number: 20150089305
    Abstract: An interrupt supervision system comprises an interrupt controller device comprising a plurality of interrupt request input lines and at least one output line connectable to a processing device.
    Type: Application
    Filed: March 12, 2012
    Publication date: March 26, 2015
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Markus Baumeister, Jeffrey L. Freeman
  • Publication number: 20150084199
    Abstract: An integrated circuit wire bond connection is provided having an aluminum bond pad (51) that is directly bonded to a copper ball (52) to form an aluminum splash structure (53) and associated crevice opening (55) at a peripheral bond edge of the copper ball (54), where the aluminum splash structure (53) is characterized by a plurality of geometric properties indicative of a reliable copper ball bond, such as lateral splash size, splash shape, relative position of splash-ball crevice to the aluminum pad, crevice width, crevice length, crevice angle, and/or crevice-pad splash index.
    Type: Application
    Filed: December 2, 2014
    Publication date: March 26, 2015
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Leo M. Higgins, III, Chu-Chung Lee
  • Patent number: 8987862
    Abstract: A device structure includes an inter-level dielectric, a via, a first conductive trench, and a second conductive trench. The inter-level dielectric has a top surface and a bottom surface. The via extends from the top surface to the bottom surface. The first conductive trench extends from the top surface to a first depth below the top surface. The second conductive trench extends from the top surface to a second depth below the top surface, wherein the second depth is above the bottom surface and below the first depth.
    Type: Grant
    Filed: January 12, 2011
    Date of Patent: March 24, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Bernd E. Kastenmeier, Raman E. Evazians
  • Patent number: 8987881
    Abstract: A semiconductor device includes a first substrate having opposing first and second main surfaces, a first die disposed on the first main surface of the first substrate, a first bond wire coupled to the first die, a first packaging material encapsulating the first die and the first bond wire, and a lead frame disposed on the first main surface of the first substrate and in electrical communication with the first bond wire. At least a portion of the lead frame extends outside of the packaging material. A top package includes first and second main surfaces and an electrical contact on the second main surface. The electrical contact is electrically connected to the lead frame and connects the top package to either the first die and/or external circuitry.
    Type: Grant
    Filed: July 10, 2013
    Date of Patent: March 24, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Seng Kiong Teng, Ly Hoon Khoo, Navas Khan Oratti Kalandar
  • Patent number: 8990546
    Abstract: Embodiments of a system and method are disclosed that can include a memory unit, and a memory management unit coupled to the memory unit. The memory management unit can include address mapping circuitry and access control circuitry operable to: provide address mappings for at least a frame stack and a link stack in the memory unit for programs being executed by the processing unit, and provide an access permission indicator applicable to any segment of the memory unit. A processing unit can save context information for a program to the frame stack, and execute a savelink instruction subsequent to the execution of a branch and link instruction. If the access permission indicator is set, the savelink instruction saves to the link stack a return address provided by the branch and link instruction.
    Type: Grant
    Filed: October 31, 2011
    Date of Patent: March 24, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventor: Peter J. Wilson
  • Patent number: 8988994
    Abstract: A system for creating logical RLC and MAC PDUs in a mobile communication system includes first and second remote network entities that communicate using the LTE link-layer protocol. The first and second remote network entities include first and second layer-2 protocol stacks, respectively. The first layer-2 protocol stack includes first PDCP, RLC and MAC sub-layers and the second layer-2 protocol stack includes second PDCP, RLC and MAC sub-layers. During transmission of data from the first remote network entity to the second remote network entity, the logical RLC and MAC PDUs are created by the first RLC and MAC sub-layers by populating logical RLC and MAC PDU structures.
    Type: Grant
    Filed: May 16, 2013
    Date of Patent: March 24, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Anoop Kumar, Amit Purohit
  • Patent number: 8988129
    Abstract: A level shifter includes a static precharge circuit. During a precharge phase, two nodes of the level shifter are precharged to a voltage at or near a reference voltage. During an evaluate phase, the level shifter maintains one of the nodes at the precharge voltage, while the other node is pulled to a different voltage level, such as at or near a ground voltage level, wherein the node that is maintained is selected based on the state of data input signals of the level shifter. The voltage at the nodes determines the state of the level shifter output signals, such that the output signals represent the input signals at a shifted voltage level. The level shifter can include a capacitor to feed forward a signal that causes the precharging to terminate more quickly.
    Type: Grant
    Filed: August 21, 2013
    Date of Patent: March 24, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventor: Perry H. Pelley
  • Patent number: 8990633
    Abstract: Complex on-chip interconnect fabrics, particularly those that include point-to-point interconnects and coherent routing networks, can present significant challenges for conventional trace techniques that may be applied in an effort to efficiently provide an external debugger with visibility into on-chip interconnect transactions. Embodiments described herein generate and supply separate in-circuit-trace messages including address messages and data messages, which are sent out (i.e., off-chip) to external debug tools generally without delay and coincident with the distinct, but related, trace events within address and data paths of the interconnect fabric. These separate message instances embed appropriate tag and mark values to allow the message instances to be post-processed and correlated by the external debug tools so as to reconstruct the transaction information for operations performed in the on-chip interconnect.
    Type: Grant
    Filed: April 21, 2009
    Date of Patent: March 24, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Zheng Xu, Sanjay Deshpande, Michael Snyder
  • Patent number: 8987916
    Abstract: A method for increasing metal density around selected vias in a semiconductor device is provided. The semiconductor device includes a plurality of vias. The method includes: generating a layout database for the semiconductor device; identifying isolated vias of the plurality of vias; selecting the isolated vias; defining a zone around each of the selected isolated vias; and increasing area of a metal layer which is above the selected isolated via and which encloses the selected isolated via within each zone to achieve a target metal density within the zone. The method improves reliability of the semiconductor device by allowing moisture to vent from around the vias.
    Type: Grant
    Filed: November 28, 2011
    Date of Patent: March 24, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventor: Douglas M. Reber
  • Patent number: 8990549
    Abstract: A method and system for booting an electronic device from a NAND flash memory includes a NAND flash controller that receives an event trigger for fetching a pre-boot code stored in the NAND flash memory. Based on the event trigger type, booting parameters are loaded into the controller including a boot frequency of the NAND flash memory. The controller searches for a good memory block in which the pre-boot code is stored by checking the first and second or the first and last pages of a memory block and fetches a portion or the entire pre-boot code based on the event trigger type at the boot frequency.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: March 24, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Hemant Nautiyal, Nitin Gera, Amit Rao, Prabhjot Singh
  • Patent number: 8990660
    Abstract: In a data processing system having a plurality of error coding function circuitries, a method includes receiving an address which indicates a first storage location for storing a first data value; using a first portion of the address to select one of the plurality of error coding function circuitries as a selected error coding function circuitry; and using the selected error coding function circuitry to generate a first checkbit value, wherein the selected error coding function circuitry uses the first data value to generate the first checkbit value. When the first portion of the address has a first value, a first one of the plurality of error coding function circuitries is selected as the selected error coding function circuitry. When the first portion of the address has a second value, a second one of the plurality of error coding function circuitries is selected as the selected error coding function circuitry.
    Type: Grant
    Filed: September 13, 2010
    Date of Patent: March 24, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventor: William C. Moyer
  • Patent number: 8990657
    Abstract: Error correction code (ECC) checkbits are generated for each write access to a memory address based on both the data to be written (the write data) and the memory address. The data processing device employs multiple-mapped or multi-port memory, whereby different memory addresses can be associated with the same memory location. To generate the ECC checkbits the data processing device selects a mask for each write access based on the write address and determines the ECC checkbits based on the write data, the write address, and the mask.
    Type: Grant
    Filed: June 14, 2011
    Date of Patent: March 24, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventor: William C. Moyer
  • Patent number: 8987786
    Abstract: A state retention power gated cell includes a logic cell arranged in two or more rows. The logic cell has an active layer including at least a first well and a second well disposed in first and second rows, respectively. In a normal operation mode, the first well is powered with a first bias voltage, the second well is powered with a second bias voltage, the first power supply line is powered with VDDC, and the second power supply line is powered with VDD. In a standby mode, the first well preferably is powered down, the second well is powered with the second bias voltage, the first power supply line is powered with VDDC, and the second power supply line is powered down.
    Type: Grant
    Filed: May 15, 2014
    Date of Patent: March 24, 2015
    Assignee: Freescale Semiconductor, Inc
    Inventors: Miaolin Tan, Zhihong Cheng, Juan Fu, Peidong Wang, Yali Wang
  • Patent number: 8988114
    Abstract: Systems and methods for low-power voltage tamper detection are described. In some embodiments, an integrated circuit may include source-follower circuitry configured to produce a scaled down supply voltage. The integrated circuit may also include undervoltage detection circuitry coupled to the source-follower circuitry, the undervoltage detection circuitry configured to output a first signal having a first logic value if the scaled down supply voltage is greater than a low threshold voltage or a second logic value if the scaled down supply voltage is smaller than the low threshold voltage. Additionally or alternatively, the integrated circuit may include overvoltage detection circuitry coupled to the source-follower circuitry, the overvoltage detection circuitry configured to output a second signal having the first logic value if the scaled down supply voltage is smaller than a high threshold voltage or the second logic value if the scaled down supply voltage is greater than the high threshold voltage.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: March 24, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Sanjay K. Wadhwa, Alfredo Olmos, Fabio Duarte De Martin
  • Patent number: 8988165
    Abstract: A phase shifter with selectable phase shift and comprises a switchable phase shifting element that includes a first and second signal path coupled between an input and an output and providing a, respective, first and second phase shift for a signal coupled through the respective signal paths; a switch circuit for selecting between the first and second signal paths where the first and second signal paths and the switch circuit are configured to equalize the insertion loss for the first and second signal path, the phase shifter further including control circuit for controlling the switch circuit.
    Type: Grant
    Filed: January 27, 2012
    Date of Patent: March 24, 2015
    Assignee: Freescale Semiconductor, Inc
    Inventor: Joseph Staudinger
  • Publication number: 20150082284
    Abstract: A method of generating an instrumented code from a program code executable on a programmable target is described. The method comprises analysing the program code to detect a loop nest with regular memory access in the program code, providing a record of static memory address information associated with the loop nest, and instrumenting the program code to provide an instrumented code corresponding to the program code supplemented with an instrumentation instruction to output an information message comprising a dynamic memory address information field formatted to store a dynamic memory address information associated with the loop nest.
    Type: Application
    Filed: April 26, 2012
    Publication date: March 19, 2015
    Applicant: Freescale Semiconductor, Inc.
    Inventors: Dragos Badea, Andrei Mihaila
  • Publication number: 20150075401
    Abstract: A diagnostic circuit is provided that includes a FET having a source connected to a first node, a drain, and a gate; a first switch connecting a current-supply node to one of the gate and a second node; a second switch connecting the first node and the second node; a variable current source providing one of a drive current and a test current to the current-supply node; a fire current source configured to provide a fire current to the drain; an error-detecting circuit connected to the second node, a reference terminal, and an error node, the error-detecting circuit generating an error signal to the error node indicating whether an error-detecting parameter at the second node exceeds a reference parameter at the reference terminal; and a control circuit generating control signals to control the variable current source, and the first and second switches.
    Type: Application
    Filed: September 18, 2013
    Publication date: March 19, 2015
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: William E. EDWARDS, Randall C. GRAY
  • Publication number: 20150077163
    Abstract: The invention relates to a Frequency Divider Circuit for dividing an input RF signal to a frequency divided RF signal. The circuit comprises a RF pair, a switching-quad pair coupled in series with a transimpedance amplifier and a double pair of emitter followers. The circuit comprises coupling elements for providing first DC paths to first amplifier paths of the RF pair and for providing second DC paths to second amplifier paths of the series arrangement of the switching-quad pair and the transimpedance amplifier. The first DC paths are independent of the second DC paths. RF connections are provided to couple the first and the second amplifier paths for transferring a signal from the first amplifier paths to the second amplifier paths.
    Type: Application
    Filed: April 20, 2012
    Publication date: March 19, 2015
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Akbar Ghazinour, Saverio Trotta
  • Publication number: 20150076556
    Abstract: An integrated circuit (IC) device including an electrostatic discharge (ESD) protection network for a high voltage application. The ESD protection network includes a common diode structure coupled between an external contact of the IC device and a substrate of the IC device, such that the common diode structure is forward biased towards the external contact, a Darlington transistor structure coupled between the external contact and the substrate of the IC device, and the Darlington transistor structure includes: an emitter node coupled to the external contact; a collector node coupled to the substrate; and a base node coupled between the emitter node of the Darlington transistor structure and the common diode structure. The at least one ESD protection network further comprises an isolation diode structure coupled between the emitter node and the base node of the Darlington transistor structure such that the isolation diode structure is forward biased towards the base node.
    Type: Application
    Filed: January 20, 2012
    Publication date: March 19, 2015
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Patrice Besse, Philippe Givelin, Eric Rolland
  • Publication number: 20150082005
    Abstract: A processing system comprises a processing device; a first instruction set encoded in a first encoding space and comprising one or more first instructions; a second instruction set encoded in a second encoding space different from the first encoding space and comprising two or more orthogonal second instructions; and an instruction encoder arranged to encode and encapsulate subsets of the second instructions in instruction containers, each instruction container sized to comprise a plurality of the second instructions.
    Type: Application
    Filed: May 29, 2012
    Publication date: March 19, 2015
    Applicant: Freescale Semiconductor, Inc.
    Inventors: Roy Glasner, Itzhak Barak, Yuval Feled, Idan Rozenberg, Lev Vaskevich