Abstract: A memory including an array of memory cells, word lines, and voltage supply lines. Each voltage supply line of the plurality of voltage supply lines is coupled to a first voltage supply terminal of a subset of memory cells of subsets of memory cells of the array. Each memory cell of the array is coupled to a word line. The memory includes a row decoder that controls a voltage on each of the word lines and controls a voltage on each of the voltage supply lines. The row decoder provides a low voltage state voltage on one of the voltage supply lines during a write operation to a subset of memory cells coupled to the voltage supply line and the row decoder provides a high voltage state voltage to the voltage supply line during a read operation of the subset of the memory cells.

Abstract: A method (30) of forming a semiconductor package (20) entails applying (56) an adhesive (64) to a portion (66) of a bonding perimeter (50) of a base (22), with a section (68) of the perimeter (50) being without the adhesive (64). A lid (24) is placed on the base (22) so that a bonding perimeter (62) of the lid (24) abuts the bonding perimeter (50) of the base (22). The lid (24) includes a cavity (25) in which dies (38) mounted to the base (22) are located. A gap (70) is formed without the adhesive (64) at the section (68) between the base (22) and the lid (24). The structure vents from the gap (70) as air inside the cavity (25) expands during heat curing (72). Following heat curing (72), another adhesive (80) is dispensed in the section (68) to close the gap (70) and seal the cavity (25).

Abstract: A method of forming an NVM cell and a logic transistor uses a semiconductor substrate. A metal select gate of the NVM cell is formed over an NVM work function setting metal, the NVM work function setting metal is on a high-k dielectric, and a metal logic gate of a logic transistor is similarly formed over work function setting and high-k dielectric materials. The logic transistor is formed while portions of the metal select gate of the NVM cell are formed. The logic transistor is protected while the NVM cell is then formed including forming a charge storage region using nanocrystals and a metal control gate over a portion of the metal select gate and a portion of the charge storage region over the substrate. The charge storage region is etched to be aligned to the metal control gate.

Abstract: A data processor and method for processing position-related input data from a rotational machine whose angular speed is variable and providing output data at an output data rate. The processor comprises a time-based over-sampler for over-sampling the input data at an over-sampling rate greater than the output data rate, and a down-sampler for extracting samples of over-sampled data from the over-sampler at the output data rate so as to provide the output data. The down-sampler is responsive to an angular timing signal related to an angular position of the machine for selecting the samples of over-sampled data to extract based on the angular position. Application to a rotational machine whose angular speed is variable, in particular to an internal combustion engine to control engine operating parameters as a function of cylinder pressure.

Abstract: A method and a device having a plurality of bit operations capability, the device includes: a first and a second registers and an instruction fetch circuit, and an arithmetic logic unit adapted to: calculate, during a first clock cycle, a position value representative of a position, within a first information vector, of a first bit of information that has a first value; and to multiply the position value by a multiplication factor to provide a first result and to alter the value of the first bit to a second value to provide an updated information vector, during the first clock cycle.

Abstract: A laterally double diffused metal oxide semiconductor device includes a well region having a first conductivity, a first carrier redistribution region having the first conductivity type, wherein the second well region is under the well region, and a highly doped buried layer under the second well region. The highly doped buried layer has the first conductivity type and has a dopant concentration less than that of the well region and less than that of the first carrier redistribution region, and the buried layer is tied to the first well region. In addition, a method for forming the laterally double diffused metal oxide semiconductor device, which may use epitaxial growth, is disclosed.

Abstract: An electronic circuit includes a switchable circuit domain that operates in a RUN mode and a STANDBY mode and receives a supply current from a core power supply. A power regulator is connected between the core power supply and the switchable circuit domain to regulate the supply current provided to the switchable circuit domain when the electronic circuit is in the RUN mode. A capacitor is connected between the power regulator and ground and is charged by a refresh circuit when the electronic circuit is in the STANDBY mode. The refresh circuit maintains a voltage across the capacitor when the electronic circuit is in the standby mode, which reduces the time for the electronic circuit to transition from the STANDBY mode to the RUN mode.

Abstract: A three dimensional (3D) package includes a helix substrate having a columnar part including a top surface, a bottom surface and a sidewall, and a plurality of steps arranged along the sidewall of the columnar part in the form of a helix. Semiconductor integrated circuits (dies) may be attached on supporting surfaces of the steps. The columnar part, the steps and the dies can be covered with a mold compound. I/Os are formed at either the sides of the steps and/or the top and/or bottom of the columnar part.

Abstract: Embodiments of integrated passive devices (e.g., metal insulator metal, or MIM, capacitors) and methods of their formation include depositing a composite electrode over a semiconductor substrate (e.g., on a dielectric layer above the substrate surface), and depositing an insulator layer over the composite electrode. The composite electrode includes an underlying electrode and an overlying electrode deposited on a top surface of the underlying electrode. The underlying electrode is formed from a first conductive material (e.g., AlCuW), and the overlying electrode is formed from a second, different conductive material (e.g., AlCu). The top surface of the underlying electrode may have a relatively rough surface morphology, and the top surface of the overlying electrode may have a relatively smooth surface morphology. For high frequency, high power applications, both the composite electrode and the insulator layer may be thicker than in some conventional integrated passive devices.

Abstract: Embodiments include systems and methods that implement semaphore-based protection of various system resources. In an embodiment, a job scheduling module receives a job execution request from a requesting module (e.g., a CPU or other autonomous module). In response to receiving the job execution request, the job scheduling module identifies a descriptor, where the descriptor includes code configured to access a semaphore-protected resource. The job scheduling module causes a descriptor controller module to execute the descriptor. More specifically, execution of the descriptor includes the descriptor controller module performing a semaphore-based access of the protected resource. The job scheduling module also may coordinate sharing the descriptor among multiple descriptor controller modules (e.g., allowing parallel execution of portions of the descriptor).

Abstract: An integrated circuit wire bond connection is provided having an aluminum bond pad (51) that is directly bonded to a copper ball (52) to form an aluminum splash structure (53) and associated crevice opening (55) at a peripheral bond edge of the copper ball (54), where the aluminum splash structure (53) is characterized by a plurality of geometric properties indicative of a reliable copper ball bond, such as lateral splash size, splash shape, relative position of splash-ball crevice to the aluminum pad, crevice width, crevice length, crevice angle, and/or crevice-pad splash index.

Abstract: A memory includes a plurality of blocks in which each block includes a plurality of memory cells. The memory includes a set of charge pumps which apply voltages to the plurality of blocks. A method includes selecting a block of the plurality of memory blocks; determining an array size of the selected block; determining a set of program/erase voltages based on the array size and temperature from a temperature sensor; and programming/erasing the selected block, wherein the set of program/erase voltages are applied by the set of charge pumps during the programming/erasing of the selected block.

Abstract: A master stage (502) of a master-slave flip-flop (500) includes an input terminal (504) for receiving the data-in signal, an output terminal, and terminals for receiving first clock signals, a transmission gate (522) coupled to the input terminal and having an output terminal, a storage element (520) coupled to the output terminal of the transmission gate, and a two-input logic gate (525) having a first input terminal (541) coupled to the storage element, a parallel input terminal (542) coupled to the input terminal of the master stage, and an output terminal (543) that provides an output terminal of the master stage. A slave stage (503) has terminals for receiving second clock signals, wherein first clock signals are delayed relative to second clock signals.

Abstract: A method of assembling a semiconductor device includes providing a substrate having an array of substrate elements linked by substrate corner elements and separated by slots extending between the corner elements. Semiconductor dies are positioned on the substrate elements. A cap, frame and contact structure is provided that has a corresponding array of caps supported by corner legs linking the caps to frame corner elements, frame elements linking the frame corner elements, and sets of electrical contact elements supported by the frame elements. The cap, frame and contact structure is fitted on the substrate with the caps extending over corresponding dies, the frame corner elements extending over the substrate corner elements, and the sets of electrical contact elements disposed in the slots. The dies are connected electrically with the electrical contact elements and the assembly is encapsulated and singulated. Singulating removes the frame elements.

Abstract: Embodiments of packaged transducer-including devices and methods for their calibration are disclosed. Each device includes one or more transducers, an interface configured to facilitate communications with an external calibration controller, a memory, and a processing component. The external calibration controller sends calibration commands to the transducer-including devices through a communication structure. The processing component of each device executes code in response to receiving the calibration commands. Execution of the code includes generating transducer data from the one or more transducers, calculating calibration coefficients using the transducer data, and storing the calibration coefficients within the memory of the device.

Abstract: A system and method of calibrating an amplifier are presented. The amplifier has a first amplification path and a second amplification path. A first state of the amplifier is identified defining a first phase shift of the first path and a second phase shift of the second path resulting in a maximum efficiency of the amplifier when an attenuation of the first path and an attenuation of the second path are set to first attenuation values. The attenuation of the first path and the attenuation of the second path is set to achieve a maximum efficiency of the amplifier when the phase shift of the first path and the phase shift of the second path are set according to the first state.

Abstract: A memory includes a memory array, read circuitry, and a strobe generator. The read circuitry is configured to provide read data from the memory array in response to a read request, wherein the read circuitry provides the read data in accordance with a first clock. The strobe generator is configured to provide a strobe signal with the read data, wherein the strobe generator provides the strobe signal in accordance with a second clock. The second clock is out of phase with the first clock by a phase in a range of 30 degrees to 150 degrees.

Abstract: Semiconductor devices with multilayer flex interconnect structures. In some embodiments, a semiconductor device may include a semiconductor chip coupled to a planar substrate and a multilayer flex interconnect structure coupled to the semiconductor chip, the multilayer flex interconnect structure including at least: a first conductive layer, a second conductive layer, and a dielectric layer disposed between the first and second conductive layers. The semiconductor device may also include another semiconductor chip coupled to the planar substrate and placed in a side-by-side configuration with respect to the semiconductor chip, where the multilayer flex interconnect structure provides electrical connections between at least two terminals of the semiconductor chip and at least two terminals of the other semiconductor chip.

Abstract: A lead frame based semiconductor die package includes a lead frame having a die pad that supports a semiconductor die and lead fingers that surround the die and die pad. The die is electrically connected to the lead fingers with bond wires. The die and bond wires are covered with an encapsulant with ends of the lead fingers projecting out from the encapsulant. One set of the lead fingers are bent and project down and another set of the lead fingers are bent and project inwardly, and under a bottom surface of the encapsulant. The encapsulant includes a slot or groove for receiving the lead fingers of the second set.

Abstract: Non-volatile memory (NVM) systems and related methods adjust program/erase bias conditions for non-volatile memory (NVM) cells to improve performance and product lifetime of NVM systems. System embodiments include integrated NVM systems having an NVM controller, a bias voltage generator, and an NVM cell array. Further, the NVM systems can store performance degradation information and program/erase bias condition information within storage circuitry. The disclosed embodiments adjust program/erase bias conditions for the NVM cells based upon performance degradation determinations, for example, temperature-based performance degradation determinations and interim verify based performance degradation determinations.