Abstract: An integrated circuit comprises a frequency dependent circuit comprising an input node, an output node and a main bank of selectable first capacitive elements that affect a frequency characteristic of the frequency dependent circuit. The frequency dependent circuit further comprises at least one shunt bank of selectable second capacitive elements located between ground and one of the input node or the output node, wherein at least one selectable second capacitive element switched out of the frequency dependent circuit is based on a number of the selectable first capacitive elements that are switched into the frequency dependent circuit.

Abstract: A system for isolating a first power domain from a second power domain in an integrated circuit includes receiving an input signal from the first power domain and receiving a set of bits from a programmable register. An isolation enable signal indicative of isolating the first power domain from the second power domain is generated, and an intermediate signal based on the isolation enable signal and the input signal is generated. At least one of the input signal, a logic low signal, a logic high signal, and the intermediate signal is output based on the isolation enable signal and the set of bits.

Abstract: An over-voltage protection circuit suitable for use at a front-end of an on-chip analog module such as an analog-to-digital converter (ADC) includes an input potential divider that can be disconnected from the module when the module is idle (or working on any other input such as the ADC sampling another channel causing the current channel to be idle) while still providing protection for front-end devices. A first NMOS transistor pair connects or disconnects the potential divider to or from ground in response to a control signal, and a second transistor pair including a NMOS transistor and a PMOS transistor ensures that the output does not rise above the supply voltage.

Abstract: There is provided a semiconductor wafer comprising a plurality of replicated IC modules. Each replicated IC module is capable of forming an individual IC die. The semiconductor wafer further comprises inter-module cross-wafer electrical connections, and the replicated IC modules are further arranged to be cut into IC dies comprising multiple replicated IC modules. There is further provided a method of fabricating an IC die. The method comprises fabricating such a semiconductor wafer, determining a required configuration of replicated IC modules, identifying inter-module boundaries along which to cut the semiconductor wafer to achieve the required configuration of replicated IC modules, and cutting the semiconductor wafer along the identified inter-module boundaries to produce at least one IC die comprising the required configuration of replicated IC modules.

Abstract: A charging circuit for at least one bootstrap charge storage element within an inertial load driver circuit is described, the at least one bootstrap charge storage element comprising a first node operably coupled to an output node of at least one switching element of the inertial load driver circuit.

Abstract: A driver circuit having an adjustable output signal includes a logic circuit configured to receive an input signal into a first input terminal and an output circuit coupled to the logic circuit, wherein the output circuit is configured to generate, at an output terminal of the output circuit, an output signal having a signal level that changes in response to a signal level of the input signal. The driver circuit further includes a feedback circuit coupled to a second input terminal of the logic circuit. The feedback circuit includes first and second gate terminals coupled to the output terminal and a third gate terminal coupled to a control signal supply, wherein the feedback circuit is configured to control a maximum level of the output signal from the driver circuit based on an operating threshold of the feedback circuit as set by a control signal generated by the control signal supply.

Abstract: A bonded semiconductor device comprising a support substrate, a semiconductor device located with respect to one side of the support substrate, a cap substrate overlying the support substrate and the device, a glass frit bond ring between the support substrate and the cap substrate, an electrically conductive ring between the support substrate and the cap substrate. The electrically conductive ring forms an inner ring around the semiconductor device and the glass frit bond ring forms an outer bond ring around the semiconductor device.

Abstract: A pipelined decoder for storaging of soft bits and hard bits associated with code blocks of a transmission. The proposed circuit reduces the amount of memory needed at the receiver level for soft bits and hard bits, in a pipelined decoder. Namely, with the solution of the subject application, both the LLRs and hard bits associated with a given code block are available when the CRC value is determined. Hence, the effect obtained non-pipelined decoder is achieved by the pipelined decoder of the subject application. A receiver for a wireless communication system, a method and a computer program are also disclosed.

Abstract: An oscillator circuit comprising at least a first component arranged to be statically calibrated to calibrate the oscillator circuit to achieve a symmetrical frequency/temperature profile for the oscillator circuit. The oscillator circuit further comprises at least one further component arranged to be dynamically calibrated to enable an oscillating frequency of the oscillator circuit to be dynamically adjusted, and at least one temperature compensation component arranged to receive at least one temperature indication for the oscillator circuit and to dynamically adjust the at least one further component based at least partly on the at least one received temperature indication. In some examples, the at least one temperature compensation component is arranged to dynamically adjust the at least one further component based on a standardized temperature compensation scheme.

Abstract: Wafer level packages and methods for producing wafer level packages having non-wettable solder collars are provided. In one embodiment, the method includes forming solder mask openings in a solder mask layer exposing regions of a patterned metal level underlying the solder mask layer. Before or after forming solder mask openings in the solder mask layer, non-wettable solder collars are produced extending partially over the exposed regions of the patterned metal level. Solder balls are deposited onto the non-wettable solder collars and into the solder mask openings such that circumferential clearances are provided around base portions of the solder balls and sidewalls of the solder mask layer defining the solder mask openings.

Abstract: An embodiment of a method of fabricating a diode having a plurality of regions of a first conductivity type and a buried region of a second conductivity type includes performing a first dopant implantation procedure to form the buried region, performing a second dopant implantation procedure to form an intermediate region of the plurality of regions, and performing a third dopant implantation procedure to form a contact region of the plurality of regions. The second and third dopant implantation procedures are configured such that the intermediate region is electrically connected with the contact region. The first, second, and third dopant implantation procedures are configured such that the buried region extends laterally across the contact region and the intermediate region to establish first and second junctions of the diode, respectively, and such that the first junction has a lower breakdown voltage than the second junction.

Abstract: A memory device includes a first select transistor having a first current electrode coupled to a first bit line, a control electrode and a second current electrode. A second select transistor has a first current electrode coupled to a second bit line, a control electrode and a second current electrode. A first bi-directional resistive element has a cathode coupled to the second current electrode of the first select transistor and an anode coupled to an internal node. A second bi-directional resistive element has a cathode coupled to the internal node and an anode coupled to the second current electrode of the second select transistor. A third transistor has a first current electrode coupled to a third bit line, a second current electrode coupled to the internal node, and a control electrode coupled to a word line.

Abstract: A RF power amplifier module comprises a die with a RF power transistor and the RF power transistor comprises a control terminal, a transistor output terminal and a transistor reference terminal. The RF power amplifier module further comprises a module input terminal, a module output terminal and at least two module reference terminals being electrically coupled to the control terminal, the transistor output terminal and the transistor reference terminal, respectively. The RF power amplifier module further comprises an electrically isolating layer and a heat conducting element. The die is in thermal contact with the heat conducting element via the electrically isolating layer in order to transfer heat during operation of the RF power transistor to the heat conducting element.

Abstract: Embodiments of systems for calibrating transducer-including devices include a board support structure, one or more motors, a motor control module, and a calibration control module. The board support structure holds a calibration board in a fixed position with respect to the board support structure. The motor(s) rotate the board support structure around one or more axes of a fixed coordinate system. The motor control module sends motor control signals to the motor(s) to cause the motor(s) to move the board support structure through a series of orientations with respect to the fixed coordinate system. The calibration control module sends, through a communication structure, signals to the transducer-including devices, which are loaded into a plurality of sockets of the calibration board. The signals cause the transducer-including devices to generate transducer data while the board support structure is in or moving toward each orientation of the series of orientations.

Abstract: A relaxation oscillator system has a relaxation oscillator and a frequency control (FC) unit. The oscillator includes first and second oscillator sub-circuits and a latch. The first and second oscillator sub-circuits receive from the FC unit, respectively, first and second control signals for controlling corresponding outputs provided to the latch by the first and second oscillator sub-circuits. The latch outputs a variable frequency feedback signal provided to the FC unit. The FC unit receives a frequency control signal for controlling the frequency of an oscillator output signal and generates the first and second control inputs based on the frequency control signal and the feedback signal so that changes to the oscillator frequency are implemented by each oscillator sub-circuit while that sub-circuit is in an idle state to avoid glitches in the oscillator output signal.

Abstract: An integrated circuit comprises a write bus coupled to a register for storing control data. A storage unit is arranged to store reference signature data encoding a reference collective state of the register. First logic circuitry generates actual signature data encoding the actual collective state of the register. Second logic circuitry is coupled to the storage unit, receives the actual signature data and compares the actual signature data with the reference signature data. The second logic circuitry comprises an alert output to provide an alert signal in response to the comparison identifying a difference between the actual signature data and the reference signature data, thereby ensuring detection of a data integrity error in respect of the register. An alert inhibitor comprises a control input and is responsive to the control input and arranged to inhibit selectively onward propagation of the alert signal from the alert output.

Abstract: An embodiment of an electronic device includes an IC die with a top surface and a bond pad exposed at the top surface. A stud bump (or stack of stud bumps) is connected to the bond pad, and the stud bump and die are encapsulated with encapsulant. A trench is formed from a top surface of the encapsulant to the stud bump, resulting in the formation of a trench-oriented surface of the stud bump, which is exposed at the bottom of the trench. An end of an interconnect is connected to the trench-oriented surface of the stud bump. The interconnect extends above the encapsulant top surface, and may be coupled to another IC die of the same electronic device, another IC die that is distinct from the device, or another conductive feature of the device or a larger electronic system in which the device is incorporated.

Abstract: A method of making an integrated circuit package, such as a ball grid array, includes providing a flexible tape that has first and second sets of bond pads on respective first and second surfaces thereof. A carrier is attached to the first surface of the flexible tape. Then conductive pillars are formed on the second set of bond pads and an intermediate layer of polymeric compound is deposited on the second surface of the flexible tape. After the compound has cured, a surface of the intermediate layer is ground to expose ends of the conductive pillars to form a sub-assembly comprising the flexible tape and the intermediate layer. Then the carrier is removed from the sub-assembly, thereby creating an interposer. The interposer is attached to a substrate and at least one die is attached to the interposer.

Abstract: A NVDRAM includes a first NV element coupled to a first terminal of a second NV element at a transfer node. A volatile cell has a transfer transistor coupled to the transfer node and has a storage node. A first NV line is coupled to the second terminal of the first NV element. Circuitry applies an alternated signal to the transfer node, couples the second terminal of the second non-volatile element to a second NV line, and applies a program signal across the first and second NV lines during a program mode that establishes a logic state. The circuitry applies a read signal across the first and second NV lines, couples the second terminal of the second NV element to the second NV line, and replaces the alternated signal with floating during a restore mode that loads the logic state into the storage node.

Abstract: A non-volatile memory device includes an array of memory cells and a plurality of word lines and voltage supply lines. Each memory cell of the array is coupled to one of the word lines. Each of the plurality of voltage supply lines is coupled to a first voltage supply terminal of a subset of memory cells of a plurality of subsets of memory cells of the array. Each subset includes a plurality of memory cells. A voltage switch supplies a respective one of a plurality of aged voltages to each of the plurality of subsets of memory cells in the memory array on respective ones of the voltage supply lines. The aged voltage supplied to a first of the plurality of subsets of memory cells is different than the aged voltage supplied to a second of the plurality of subsets of memory cells.