Abstract: A semiconductor device 10 is provided. A first layer 12 has a first dopant type; a second layer 14 is provided over the first layer 12; and a third layer 16 is provided over the second layer and has the first dopant type. A plurality of first and second semiconductor regions 22, 24 are within the third layer. The first semiconductor region 22 has the first dopant type, and the second semiconductor region 24 has the second dopant type. The first and second semiconductor regions 22, 24 are disposed laterally to one another in an alternating pattern to form a super junction, and the super junction terminates with a final second semiconductor region 24, 24? of the second dopant type.

Abstract: Methods, devices and systems are provided for bit synchronizing multiple serial bitstreams (106) with a common clock signal (116). Activity occurring in each bitstream is detected (304) for each of a plurality of phases corresponding to cycles of the common clock signal. One of the plurality of phases is selected (308) for each of the serial bitstreams based upon the activity detected within the selected phase. Data is then extracted (322) from the selected phase for each of the serial bitstreams using the common clock signal to thereby bit synchronize each of the plurality of serial bitstreams to each other.

Abstract: A semiconductor process and apparatus includes forming a semiconductor device by depositing a layer of nitride (20) over a semiconductor structure (10), patterning and etching the nitride layer to form a patterned nitride layer (42, 44), depositing a layer of polysilicon (62), planarizing the polysilicon layer with a CMP process to remove any portion of the polysilicon layer (62) above the patterned dielectric layer (42, 44), and then removing the patterned nitride layer (42, 44), thereby defining one or more polysilicon features (72, 74, 76) that can be used as floating gates, transistors gates, bit lines or any other semiconductor device feature.

Abstract: A method for analyzing an design of an integrated circuit, the method includes defining possible timings of signals to be provided to the integrated circuit and calculating hold violations; characterized by including a stage of determining relationships between clock events and corresponding data/control events that ideally precede the clock events, in response to the possible timing of signals; and determining hold parameters in response to the relationships. A computer readable medium having stored thereon a set of instructions, the set of instructions, when executed by a processor, cause the processor to define at least one internal delay of a designed component, characterized by causing the processor to define a cell that is characterized by multiple hold times and multiple setup values for a certain clock skew value.

Abstract: A method is provided for making an integrated circuit. Cell representing a layout of a set of features, is divided into at least a first region and a second region. Optical Proximity Correction is carried out on at least the first region of cell. One or more instances of cell are located to define IC prior to carrying out final OPC optimisation on the second regions of each cell in the defined IC.

Abstract: A semiconductor switch arrangement (300) comprises a bipolar transistor (302) and a semiconductor power switch (301) having an input node (306), an output node (304) and a control node (305) for allowing a current path to be formed between the input node (306) and the output node (307). The bipolar transistor (302) is coupled between the input node (306) and the control node (305) such that upon receiving an electro-static discharge pulse the bipolar transistor (302) allows a current to flow from the input node (306) to the control node (305) upon a pre-determined voltage being exceeded at the input node (306) to allow the control node (305) to cause a current to flow from the input node (306) to the output node (307). Thus, the bipolar transistor device protects the semiconductor switch device, such as an LDMOS device, against ESD, namely protection against power surges of, say, several amperes in less than 1 usec.

Abstract: A III-V based, implant free MOS heterostructure field-effect transistor device comprises a gate insulator layer overlying a compound semiconductor substrate; ohmic contacts coupled to the compound semiconductor substrate proximate opposite sides of an active device region defined within the compound semiconductor substrate; and a gate metal contact electrode formed on the gate insulator layer in a region between the ohmic contacts. The ohmic contacts have portions thereof that overlap with portions of the gate insulator layer within the active device region. The overlapping portions ensure avoidance of an undesirable gap formation between an edge of the ohmic contact and a corresponding edge of the gate insulator layer.

Abstract: A method and system of testing an electronic device can be performed by estimating the die temperature using correlation data previously collected for other electronic devices. In one embodiment, correlation data can include (1) die temperatures measured and (2) currents drawn by the electronic devices, testing voltages for the electronic devices, or powers consumed by the electronic devices during the testing. The correlation data can be used to generate an equation or be stored in a table. A method of testing a subsequent electronic device can include testing the subsequent electronic device. The method can also include estimating a die temperature for the subsequent electronic device during testing, wherein the die temperature can be estimated at least in part using a current drawn by the subsequent electronic device, a testing voltage for the subsequent electronic device, or a power consumed by the subsequent electronic device.

Abstract: A power-on reset (“POR”) methodology and circuit for an electronic circuit using multiple supply voltage domains asserts a reset signal upon ramp up of the first supply voltage signal, maintains the reset signal until all of the supply voltage signals have ramped up, and de-asserts the reset signal after all of the supply voltage signals have ramped up. Practical embodiments of the POR circuit include a control circuit that reduces static and/or dynamic current leakage associated with the operation of the POR circuit.

Abstract: A voltage control circuit includes a first transistor coupled to a first voltage supply terminal having a first voltage, a second transistor coupled to the first transistor and a node, a third transistor coupled to a second voltage supply terminal and the node, wherein the second voltage supply terminal has a second voltage and the node is at a voltage selected from the group consisting of the first voltage and the second voltage, and a fourth transistor coupled to the node.

Abstract: The present disclosure provides several systems. In general, it provides E-field sensor systems that utilize at least one electrode 100 adapted for creating an E-field in an area 210 within a detection volume where fluid presence 400 or presence of a solid body 300 is to be detected. The electrical field sensor is configured to generate a detected signal responsive to a change in capacitance of the electric field, and is communicatively coupled to the electrode 100. In addition, a processor 275 is configured to determine a quantitative measure of a fluid or solid body within the detection volume in accordance with a capacitive relationship with the detection volume. Described are examples of the system for fluid presence detection, fluid level measurement and measurement of proximity to a solid object.

Abstract: A method of packaging a semiconductor die (10) includes providing a flip-chip die (10) with bump connections (12) on its bottom surface (14). An adhesive tape (18) is attached to a plate surface (16) and lead fingers (20) are formed on the tape (18). The die (10) is placed on the tape (18) such that the bumps (12) on the die (10) contact respective ones of the lead fingers (20) on the tape (18). A reflow process is performed on the die (10), the tape (18) and the plate (16), which forms C5 type interconnects. A mold compound (24) is formed over the die (10) and the tape (18), and then the tape (18) and the plate (16) are removed.

Abstract: An electrical inductor circuit element comprising an elongate electrical conductor coupled magnetically with thin layers of magnetic material extending along at least a part of the conductor above and below the conductor. The aspect ratio of the thickness of each of the layers of magnetic material to its lateral dimensions is between 0.001 and 0.5 and is preferably between 0.01 and 0.1. This range of aspect ratio has a high ferromagnetic resonance frequency. The inductor preferably includes magnetic interconnections extending beside the conductor and interconnecting the layers of magnetic material at positions where magnetic flux generated by electrical current flowing along the conductor is transverse to the layers.

Abstract: An arrangement and method for impedance matching (e.g., for a power amplifier) comprising a first node (204a) for receiving an output current to be impedance matched; a second node (212, 214) for receiving output current from the first node; a first current conductor (202c) for carrying current from the first node to the second node; a third node (204b) for receiving output current from the second node; and a second current conductor (202d) for carrying current from said second node to said third node, whereby the first and second current conductors are closely positioned so that their inductance is the sum of their self-inductances and the negative sum of their mutual inductance.

Abstract: A semiconductor device (30) comprises an underlying insulating layer (34), an overlying insulating layer (42) and a charge storage layer (36) between the insulating layers (34, 42). The charge storage layer (36) and the overlying insulating layer (42) form an interface, where at least a majority of charge in the charge storage layer (36) is stored. This can be accomplished by forming a charge storage layer (36) with different materials such as silicon and silicon germanium layers or n-type and p-type material layers, in one embodiment. In another embodiment, the charge storage layer (36) comprises a dopant that is graded. By storing at least a majority of the charge at the interface between the charge storage layer (36) and the overlying insulating layer (42), the leakage of charge through the underlying insulating layer is decreased allowing for a thinner underlying insulating layer (34) to be used.

Abstract: A technique for enabling a computer processor to be capable of responding with comparable efficiency to both: (i) events whose handling is independent on the state of the software machine that responds to the events, and (ii) events whose handling is dependent on the state of the software machine that responds to the events. Each time a software state machine enters a state, one or more event control registers are programmed to direct the illustrative embodiment where to resume execution when each possible event occurs. This enables the illustrative embodiment to automatically branch to the code that is appropriate for the combination of the event and the state of the software machine.

Abstract: Structure and method are provided for plastic encapsulated semiconductor devices having a buffer layer of low dielectric constant and/or low loss tangent material separating the die surface from the plastic encapsulation. Semiconductor wafers with substantially completed SC die are coated with the buffer layer. The buffer layer is patterned to expose the die bonding pads but leave the buffer layer over some or all of the other die metallization. The die are then separated, mounted on a lead-frame or other support, wire bonded or otherwise coupled to external leads, and encapsulated. The plastic encapsulation surrounds the die and the buffer layer, providing a solid structure. The buffer layer reduces the parasitic capacitance, cross-talk and loss between metallization regions on the die. An optional sealing layer may also be provided at the wafer stage between the buffer layer and the plastic encapsulation to mitigate any buffer layer porosity.

Abstract: Apparatus and method for providing information to a cache module, the apparatus includes: (i) at least one processor, connected to the cache module, for initiating a first and second requests to retrieve, from the cache module, a first and a second data unit; (ii) logic, adapted to receive the requests and determine if the first and second data units are mandatory data units; and (iii) a controller, connected to the cache module, adapted to initiate a single fetch burst if a memory space retrievable during the single fetch burst comprises the first and second mandatory data units, and adapted to initiate multiple fetch bursts if a memory space retrievable during a single fetch burst does not comprise the first and the second mandatory data units.

Abstract: In current real-time debug systems, debug messages are transmitted through a limited bandwidth port (18) from an integrated circuit (10) to an external development system (25). As some integrated circuits (10) become even more densely packed with multiple bus masters (11, 12) and/or multiple busses (16) capable of generating messages, it is becoming more and more difficult for the limited bandwidth port (18) to sufficiently support the volume of debug messages that are to be transmitted from an integrated circuit (10) to an external development system (25). A plurality of masks (70, 80, 90, 100, 110, 120, 130, 140, 150) and masking circuitry (36) may be used to selectively mask portions (41-45, 51-55) of debug messages (40, 50) in order to significantly improve bandwidth.

Abstract: A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed over the semiconductor layer. A first plurality of nanoclusters is formed over the first portion and a second plurality of nanoclusters is formed over the second portion. A layer of nitrided oxide is formed around each nanocluster of the first plurality and the second plurality of nanoclusters. Remote plasma nitridation is performed on the layers of nitrided oxide of the first plurality of nanoclusters. The nanoclusters are removed from the second portion. A second dielectric layer is formed over the semiconductor layer. A conductive layer is formed over the second dielectric layer.