Abstract: A method of forming a semiconductor structure comprises forming a first layer of silicon and then forming a second, silicon germanium, layer adjacent the silicon layer. A thin third layer of silicon is then formed adjacent the second layer. A gate structure is then formed upon the third layer of silicon using convention Complementary Metal Oxide Semiconductor processes. Trenches are then formed into the second layer and the structure is then exposed to a thermal gaseous chemical etchant, for example heated hydrochloric acid. The etchant removes the silicon germanium, thereby forming a Silicon-On-Nothing structure. Thereafter, conventional CMOS processing techniques are applied to complete the structure as a Metal Oxide Semiconductor Field Effect Transistor, including the formation of spacer walls from silicon nitride, the silicon nitride also filling a cavity formed beneath the third layer of silicon by removal of the silicon germanium.

Abstract: A system an method of designing an integrated circuit identifies a plurality of synchronous cells of an integrated circuit to be driven by a clock driver, wherein the plurality of synchronous cells are a subset of previously placed cells of the integrated circuit. The placement of synchronous cells is performed to reduce a current needed from the clock driver to drive the plurality of synchronous cells.

Abstract: A method forms a split gate memory device. A layer of select gate material over a substrate is patterned to form a first sidewall. A sacrificial spacer is formed adjacent to the first sidewall. Nanoclusters are formed over the substrate including on the sacrificial spacer. The sacrificial spacer is removed after the forming the layer of nanoclusters, wherein nanoclusters formed on the sacrificial spacer are removed and other nanoclusters remain. A layer of control gate material is formed over the substrate after the sacrificial spacer is removed. A control gate of a split gate memory device is formed from the layer of control gate material, wherein the control gate is located over remaining nanoclusters.

Abstract: An anneal of an epitaxially grown crystalline semiconductor layer comprising a combination of group-IV elements. The layer contains at least one of the group of carbon and tin. The layer of epitaxially grown material is annealed at a temperature substantially in a range of 1,000 to 1,400 degrees Celsius for a period not to exceed 100 milliseconds within 10% of the peak temperature. The anneal is performed for example with a laser anneal or a flash lamp anneal. The limited-time anneal may improve carrier mobility of a transistor.

Abstract: A radio frequency (“RF”) harmonic filter circuit as disclosed herein is fabricated using integrated passive device (“IPD”) technology. The RF harmonic filter circuit is configured to provide second, third, and fourth harmonic rejection while providing good input and output impedance matching. The RF harmonic filter circuit employs only one IPD loop inductance (preferably used for a second harmonic resonance circuit), which results in a significant die/package size reduction. The RF harmonic filter circuit also employs a combined circuit that performs input and/or output impedance matching and third harmonic rejection.

Abstract: A method for forming a semiconductor device includes providing a first integrated circuit having a landing pad and attaching a second integrated circuit to the first integrated circuit using at least one bonding layer. The second integrated circuit has an inter-circuit trace, the inter-circuit trace has an inter-circuit trace opening. The method further includes forming an opening through the second integrated circuit, the opening extending through the inter-circuit trace opening, forming a selective barrier on exposed portions of the inter-circuit trace in the opening, extending the opening through the at least one bonding layer to the landing pad, and filling the opening with a conductive fill material. The selective barrier layer comprises at least one of cobalt or nickel, and the conductive fill material electrically connects the inter-circuit trace and the landing pad.

Abstract: A fully-silicided gate electrode is formed from silicon and a metal by depositing at least two layers of silicon with the metal layer therebetween. One of the silicon layers may be amorphous silicon whereas the other silicon layer may be polycrystalline silicon. The silicon between the metal layer and the gate dielectric may be deposited in two layers having different crystallinities. This process enables greater control to be exercised over the phase of the silicide resulting from this silicidation process.

Abstract: A method of generating Cyclic Redundancy Checking codes based upon an N-bit binary string comprises initially compressing the N-bit binary string into a compressed string of bits using a compression look-up table. The compressed string of bits is congruent with the N-bit binary string and so share a same CRC code. Using the compressed string of bits, a conventional CRC generation technique is employed to generate the CRC code.

Abstract: A method for transmitting packets, the method includes receiving multiple packets at multiple queues. The method is characterized by dynamically defining fixed priority queues and weighted fair queuing queues, and scheduling a transmission of packets in response to a status of the multiple queues and in response to the definition. A device for transmitting packets, the device includes multiple queues adapted to receive multiple packets. The device includes a circuit that is adapted to dynamically define fixed priority queues and weighted fair queuing queues out of the multiple queues and to schedule a transmission of packets in response to a status of the multiple queues and in response to the definition.

Abstract: A receiver for receiving a switched signal on a communication line (1), such as a LIN bus, the signal varying between first and second voltage levels (sup, ground). The receiver comprises a comparator (31, 54) responsive to the relative values of the received signal voltage level (Vlin) and an input reference voltage level (Vsup). The comparator (31, 54) comprises a current generator (40, 41) selectively operatble when the recieved signal is asserted to produce an input current (Iin) which is a function of the received signal voltage level (Vlin) and a reference current (Isup) which is a function of the input reference voltage level (Vsup), and output means (28, 32, 31; 55, 56) responsive to the relative values of the input current (Iin) and the reference current (Isup). The output means (28, 32, 31; 56) is supplied with power at a voltage (VDD) substantially lower than the difference between the first and second voltage levels (Vsup, ground).

Abstract: An adaptive proportional integral control loop determines a ratio of the input sampling rate to the output sampling rate for use in asynchronous sample rate conversion. An input counter counts input samples and its output is sampled at the output sampling rate by a latch. The output of the latch is passed through a closed loop circuit comprising variable gain and integrator sections.

Abstract: A receiver for a wireless communication device comprising means for determining a sequence of code block addresses for received rate matched encoded data to allow rate de-matching and decoding to be performed on a code block by code block basis for the received rate matched encoded data.

Abstract: An electronic device can include a semiconductor fin overlying an insulating layer. The electronic device can also include a semiconductor layer overlying the semiconductor fin. The semiconductor layer can have a first portion and a second portion that are spaced-apart from each other. In one aspect, the electronic device can include a conductive member that lies between and spaced-apart from the first and second portions of the semiconductor layer. The electronic device can also include a metal-semiconductor layer overlying the semiconductor layer. In another aspect, the semiconductor layer can abut the semiconductor fin and include a dopant. In a further aspect, a process of forming the electronic device can include reacting a metal-containing layer and a semiconductor layer to form a metal-semiconductor layer. In another aspect, a process can include forming a semiconductor layer, including a dopant, abutting a wall surface of a semiconductor fin.

Abstract: A latch has a first mode in which the latch functions as a dynamic latch and a second mode in which the latch functions as a static latch. The latch has a feedback circuit that in turn has two parallel switchable loads. The first load is responsive to a data input signal of the latch in the first mode and disabled in the second mode. The second load is responsive to a clock signal in the second mode and disabled in the first mode. The switchable loads being in parallel provides for the ability to select the feedback that is better for the particular mode of operation. The first and second switchable loads can be optimized for the particular mode of operation that will use it.

Abstract: New approaches for providing communication between multiple masters (12, 14) and one or more shared resources (24, 30, 100) are needed. One example of a resource that may need to be shared is circuitry complying with the Universal Serial Bus (USB) standard (100). The USB specification defines the use of USB endpoints as data and control channels that reside in a USB device. In some cases it is desirable to have a certain number of endpoints controlled by one processor, and other endpoints controlled by a different processor, thus providing a shared control of all the endpoints. Circuitry (402, 417, 480) may be used to provide steering for additional signals such as interrupts. Other shared resources (24, 30) may use more centralized circuitry (36) to perform a steering function for additional signals.

Abstract: A series regulator circuit that enables detection of a voltage drop and reduces consumed current in a static state. A constant current source, which is connected to a power supply voltage line, is connected to a bipolar transistor. The bipolar transistor includes an emitter terminal and base terminal connected to a ground line via first and second resistors, respectively. The constant current source is connected to the source terminal of a PMOS transistor and the gate terminal of an NMOS transistor. The source terminal of the NMOS transistor is connected via third and fourth resistors to the base terminal of the bipolar transistor.

Abstract: Methods and apparatus are provided for sensing physical parameters. The apparatus comprises a magnetic tunnel junction (MTJ) and a magnetic field source whose magnetic field overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. A magnetic shield is provided at least on a face of the MFS away from the MTJ. The MTJ comprises first and second magnetic electrodes separated by a dielectric configured to permit significant tunneling conduction therebetween. The first magnetic region has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.

Abstract: A differential receiver circuit receives a differential input signal including first and second input signals (DP, DM) and generates a single-ended output signal. The receiver circuit includes first and second comparators that receive the differential input signal and generate respective first and second differential output signals. A current summer is connected to the first and second comparators and receives the first and second differential output signals and generates a third differential output signal. A differential to single-ended converter is connected to the current summer and receives the third differential output signal and generates the single-ended output signal. The differential input signal varies from a ground voltage level to an external reference voltage level (VUSB), while the first and second comparators are made with devices that operate at an internal reference voltage level that is lower than the external reference voltage level.

Abstract: A semiconductor structure (100) includes a first substrate (110) having a first semiconductor device (112) formed therein, a second substrate (120) having a second device (122) formed therein and vertically-integrated above the first substrate (110), and a thermal isolation gap (130) disposed between the first device (112) and the second device (122). The thermal isolation gap (130) may be formed, for example, using an etched dielectric layer formed on first substrate (110), using an etched cavity in the second substrate (120), or by including a bonding layer (140) that has a gap or void incorporated therein.

Abstract: An electronic device can include a static-random-access memory cell. The static-random-access memory cell can include a first transistor of a first type and a second transistor of a second type. The first transistor can have a first channel length extending along a first line, and the second transistor can have a second channel length extending along a second line. The first line and the second line can intersect at an angle having a value other than any integer multiple of 22.5°. In a particular embodiment, the first transistor can include a pull-up transistor, and the second transistor can include a pass gate or pull-down transistor. A process can be used to form semiconductor fins and conductive members, which include gate electrode portions, to achieve the electronic device including the first and second transistors.