Abstract: A low drop-out DC voltage regulator for regulating a voltage from a DC power supply applied to a load at an output of the regulator and comprising a pass device for controlling flow of current from the power supply to the load so as to control the output voltage at the regulator output, and a feedback loop for controlling the pass device. The feedback loop comprises a resistive feedback path and a capacitive feedback path that includes a feedback capacitive element in series, and comparator means responsive to signals from the feedback paths for applying to the pass device an error signal that is a function of the value of the output voltage relative to a nominal value so as to control the output voltage.

Abstract: A flexible peripheral access protection mechanism within a data processing system (10, 100). In one embodiment, each master (14, 15) within the data processing system (10) includes a corresponding privilege level modifier (70, 74) and corresponding trust attributes (71, 72, 75, 76) for particular bus access types (e.g. read and write accesses). Also, in one embodiment, each peripheral (22, 24) within the data processing system (10) includes a corresponding trust attribute (80, 84), write protect indicator (81, 85), and a privilege protect indicator (82, 86). Therefore, in one embodiment, a bus access by a bus master to a peripheral is allowed when the bus master has the appropriate privilege level and appropriate level of trust required by the peripheral (and the peripheral is not write protected, if the bus access is a write access). Also, through the use of the privilege level modifiers, a the bus master can be forced to a particular privilege level for a particular bus access.

Abstract: A method for making a semiconductor device includes providing a first substrate region and a second substrate region, wherein at least a part of the first substrate region has a first conductivity type and at least a part of the second substrate region has a second conductivity type different from the first conductivity type. The method further includes forming a dielectric layer over at least a portion of the first substrate region and at least a portion of the second substrate region. The method further includes forming a metal-containing gate layer over at least a portion of the dielectric layer overlying the first substrate region. The method further includes introducing dopants into at least a portion of the first substrate region through the metal-containing gate layer.

Abstract: A method for conversion of signals between analog and digital characterised by; applying a non-linear transfer function to an input signal, such that the relation between the quantisation levels of the converter and the input signal vary as a non-linear function of the magnitude of the input signal. The non-linear transfer function is related to the probability density function of the input signal so that larger quantisation bins of the converter correspond to less probable values of the input signal.

Abstract: An electronic device can include a gated diode, wherein the gated diode includes a junction diode structure including a junction. A first conductive member spaced apart from and adjacent to the junction can be connected to a first signal line. A second conductive member, spaced apart from and adjacent to the junction, can be both electrically connected to a second signal line and electrically insulated from the first conductive member. The junction diode structure can include a p-n or a p-i-n junction. A process for forming the electronic device is also described.

Abstract: This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), a transparent conductive layer (16) formed on a surface (14) of the substrate (12) by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer (20) formed on a surface (18) of the transparent conductive layer (16).

Abstract: A system and method for performance monitoring in processors is provided. The system and method evaluates the performance of the processor by counting selected events during one or more defined periods. The performance monitor provides improved performance characterization by providing highly-configurable start-stop control over the event counting.

Abstract: A low on-state resistance power semiconductor device has a shape and an arrangement that increase the channel density and the breakdown voltage The power semiconductor device comprises a plurality of individual cells formed on a semiconductor substrate (62). Each individual cell comprises a plurality of radially extending branches (80) having source regions (37) within base regions (36). The plurality of individual cells are arranged such that at least one branch of each cell extends towards at least one branch of an adjacent cell and wherein the base region (36) of the extending branches merge together to form a single and substantially uniformly doped base region (36) surrounding drain islands (39) at the surface of the semiconductor substrate (62).

Abstract: A method (700) and apparatus (600) are described for performing 2M?1 parallel ACS operations to generate 2M path metric outputs and buffering the 2M path metric outputs in connection with a track buffer (112) in an Ultrawide Bandwidth (UWB) receiver for decoding a message sequence encoded according to a convolutional code. Contents of the track buffer are updated in accordance with Register Exchange and outputs from the track buffer can further be input to a voting unit (114) where a voting scheme can be applied and a decision rendered as to the originally transmitted message sequence.

Abstract: An apparatus (200) and method (300) for receiving a communications signal. A spread spectrum signal demodulator (210) is adapted to demodulate a packet header (110) of a data packet (102) that is communicated by a wireless communications signal. The packet header (110) is modulated with a spread spectrum technique and the spread spectrum signal demodulator (210) produces a packet header detection signal 220 representing a successful detection of a predefined packet header value. A non-spread spectrum signal demodulator (212) is communicatively coupled to the spread spectrum signal demodulator (210) and demodulates, in response to the packet header detection signal (212), a non-spread spectrum modulated data payload within the data packet. A data output select (234) produces demodulated data produced by either one of both the spread spectrum signal demodulator (210) or the non-spread spectrum signal demodulator (212).

Abstract: A multi-mode transmitter (301) is adapted to modulate a data packet (200) communicated by a wireless communications signal. The data packet includes a packet header comprising a preamble (201) and a start of frame delimiter (202), and a data payload comprising a payload data length portion (203) and a payload portion (204). The packet header is modulated with a spread spectrum technique. When transmitting a data payload in one mode, the data payload is also modulated with the spread spectrum technique. When transmitting a data payload in another mode, the data payload is modulated with a non-spread spectrum technique.

Abstract: In one form a memory and method thereof has a memory array having a plurality of columns of bit lines and a plurality of intersecting rows of word lines. Control circuitry is coupled to the memory array for successively accessing predetermined bit locations in the memory array during successive memory cycles. The control circuitry senses data within the memory array at a beginning of a predetermined memory cycle. Timing of the memory cycle is determined from a single external clock edge of a memory system clock. During a single memory cycle the memory initially performs the function of sensing followed by at least the functions of precharging the bit lines, addressing and developing a signal to be sensed. In one form each of the successive memory cycles is a period of time of no more than a single period of the memory system clock.

Abstract: A magnetic nanoparticle (22), a magnetic nanomaterial (30), assembly (30), and a method for synthsising a magnetic nanoparticle, relating to thermodynamically stable and air stable ferromagnetic nanoparticles of adjustable aspect ratio made upon decomposition of organometallic precursors in solution in the presence of a reaction gas and a mixture of organic ligands. The magnetic nanomaterial comprises magnetic nanoparticles of homogeneous size, shape, and magnetic orientation that comprises a magnetic core (24, 34) ferromagnetic at room temperature and/or operating temperatures, and a non-magnetic matrix (26, 36) encapsulating the magnetic core. This magnetic nanomaterial could be used in high frequency integrated circuit applications, such as used in wireless portable electronic devices, to enchance magnetic field confinement and improve passive component performance at MHz and GHz frequency in a variety of passive and active devices, such as transformers, on-chip signal isolation, inductors, and the like.

Abstract: A semiconductor structure (100) includes a substrate (110) having a first surface (111) with a mold lock feature (101). The semiconductor structure also includes a semiconductor chip (120) located over the first surface of the substrate. The semiconductor structure further includes an electrical isolator structure (340) located over the first surface of the substrate. The electrical isolator structure includes an electrical lead (341, 342) and an electrically insulative element (343) molded to the electrical lead. An optional portion (444) of the electrical isolator structure is located in the mold lock feature. The semiconductor structure additionally includes an adhesive element (450) located between and coupling the electrical isolator structure and the first surface of the substrate.

Abstract: Techniques for accessing a unified cache to obtain instruction information are provided. One exemplary technique includes accessing, during a first instruction access, a first cache line of a first way of a unified cache having a plurality of ways to obtain instruction information associated with a first instruction, enabling the first way and disabling one or more of the remaining ways of the unified cache in response to a determination that the first cache line comprises instruction information associated with a second instruction, and accessing, during a second instruction access, the first cache line of the first way to obtain instruction information associated with the second instruction.

Abstract: A method of forming a compound semiconductor device comprises forming a gate insulator layer overlying a compound semiconductor substrate, defining an active device region within the compound semiconductor substrate, forming ohmic contacts to the compound semiconductor substrate proximate opposite sides of the active device region, and forming a gate metal contact electrode on the gate insulator layer in a region between the ohmic contacts. The ohmic contacts having portions thereof that overlap with portions of the gate insulator layer within the active device region. The overlapping portions ensure an avoidance of an undesirable gap formation between an edge of the ohmic contact and a corresponding edge of the gate insulator layer.

Abstract: A circuit includes a voltage regulator (208) for outputting a voltage at a regulated level, a protection circuit (260), and a load circuit (210) coupled to the voltage regulator. The protection circuit includes means for preventing the voltage regulator from outputting a voltage at a level higher than the regulated level during a start-up period of the voltage regulator.

Abstract: An integrated circuit package (202) includes a voltage regulator (208) and a power-out pin (236) for coupling to a load circuit (210) via a connection (234) external to the integrated circuit package and for coupling to an output (230) of the voltage regulator via a connection (224, 228, 226 and 231) internal to the integrated circuit package. The internal connection has a series resistance that causes a voltage drop due to a load current. The voltage regulator compensates for the voltage drop in the internal connection using a current feedback circuit, in which the current fed back is proportional to the voltage drop caused by the series resistance of the internal connection.

Abstract: A method and a device. The device includes a single port memory unit that includes multiple memory regions, whereas each memory region is adapted to receive multiple data segments in parallel; whereas the single port memory unit receives a memory clock signal; characterized by including access logic adapted to receive multiple data segment write requests from multiple data sources; to write, during a first memory clock cycle, multiple data segments to a certain memory region in response to an availability of the certain memory region; to temporarily store rejected data segments; to write, during a second memory clock cycle, at least the rejected data segments, to another memory region.

Abstract: Removing a portion of a structure in a semiconductor device to separate the structure. The structure has two portions of different heights. In one example, the structure is removed by forming a spacer over the lower portion adjacent to the sidewall of the higher portion. A second material is then formed on the structure outside of the spacer. The spacer is removed and the portion under the spacer is then removed to separate the structure at that location. In one embodiment, separate channel regions are implemented in the separated structures. In other embodiments, separate gate structures are implemented in the separated structures.