Abstract: A memory cell is programmed by injecting charge into a charge storage layer of the memory cell. A desired programmed charge results in the charge storage layer over an edge portion of a channel region of the memory cell. An undesired programmed charge results in the charge storage layer over an inner portion of the channel region. Charge tunneling is used to substantially remove the undesired programmed charge in the charge storage layer. In one form the memory cell has a substrate having a channel region, a first dielectric layer over the substrate and a charge storage layer over the first dielectric layer. A second dielectric layer over the charge storage layer has a first portion that is thicker than a second portion to selectively control the charge tunneling.

Abstract: Embodiments of the invention provide a low-power, high-gain amplifier for a crystal oscillator. In some embodiments, the oscillator amplifier circuit comprises two NMOS transistors stacked in series with a PMOS transistor. In various embodiments, each of the NMOS transistors is diode-connected through a resistor and has the input signal capacitively coupled onto its control terminal. The stacked amplifier raises the DC level of the amplified oscillatory signal and can support a substantial oscillation amplitude without clipping.

Abstract: A circuit device is placed within an opening of a conductive layer which is then partially encapsulated with an encapsulant so that the active surface of the circuit device is coplanar with the conductive layer. At least a portion of the conductive layer may be used as a reference voltage plane (e.g. a ground plane). Additionally, a circuit device may be placed on a conductive layer such that an active surface of circuit device is between conductive layer and an opposite surface of circuit device. The conductive layer has at least one opening to expose the active surface of circuit device. The encapsulant may be electrically conductive or electrically non-conductive.

Abstract: A lead-frame circuit package comprises a die and a substrate located thereon to route radio frequency signals to/from the die. The package preferably comprises an exposed pad on the die to receive a power amplifier device wherein the substrate is used to provide high-Q elements such as RF chokes on signal paths to/from the power amplifier device. In this manner, the design benefits from the power capabilities and improved grounding of a lead-frame conductor, whilst also achieving the routeing capabilities and small scale advantages provided by a multi-layer printed circuit substrate.

Abstract: A compensation circuit and a method for compensating for process, voltage and temperature (PVT) variations in an integrated circuit (IC). The IC includes several functional modules, each of which includes a set of functional units, and generates an output signal in response to an input signal. The compensation circuit includes a code generator and a logic module. The code generator generates a digital code for each functional unit. The digital codes are based on phase differences between the input signal and the output signal. The logic module generates calibration codes based on the digital codes. The calibration codes compensate for the PVT variations in the corresponding functional units.

Abstract: A semiconductor fabrication process includes forming a sacrificial layer on a substrate of a donor wafer and implanting hydrogen ions into the substrate through the sacrificial layer to create a stress layer in the substrate. After forming the stress layer, multiple layer stacks are formed on the donor wafer substrate including a bottom gate conductor layer and a bottom gate dielectric layer. An upper surface of the donor wafer is bonded to an upper surface of a handle wafer. An oxide or low-k layer may be formed on the handle wafer. A portion of the substrate of the donor wafer is then cleaved. The bottom gate conductor layer is selected from the group including polysilicon, alpha silicon, alpha germanium, W, Ti, Ta, TiN, and TaSiN.

Abstract: A method for processing semiconductor wafers is disclosed. A semiconductor wafer is provided to a semiconductor processing stage where a block copolymer surfactant (BCS) is applied to the wafer surface. In one embodiment, the BCS includes a hydrophobic portion and a hydrophilic portion. Alternatively, the BCS may be a silicone-containing BCS. In one embodiment, the BCS is within an aqueous solution where the concentration of the BCS within the aqueous solution is less than one percent by weight. Also disclosed is an aqueous solution including abrasive particles and a BCS having a hydrophobic portion and a hydrophilic portion. The abrasive particles may include silica, alumina, or ceria.

Abstract: A communication system having an echo canceller is disclosed. One embodiment of the echo canceller includes an adaptive filter used to provide an estimate of reflected echo which is removed from the send signal. The echo canceller may also include a near-end talker signal detector which may be used to prevent the adaptive filter from adapting when a near-end talker signal is present. The echo canceller may also include a nonlinear processor used to further reduce any residual echo and to preserve background noise. The echo canceller may also include a monitor and control unit which may be used to monitor the filter coefficients and gain of the adaptive filter to maintain stability of the echo canceller, estimate pure delay, detect a tone, and inject a training signal. The echo canceller may also include a nonadaptive filter used to reduce the length of the adaptive filter.

Abstract: A charge pump circuit for a high side drive circuit and a driver driving voltage circuit that stably output a voltage when input voltage is low. The charge pump circuit includes first and second transistors, first and second capacitors, and first to third diodes. The first capacitor has a high voltage side, connected to a load driving power supply voltage via the first diode, and a low voltage side, connected to the load driving power supply voltage via the first transistor or grounded via the second transistor driven in synchronization with the first transistor. The high voltage side is supplied, via the third diode, with a low side drive voltage that is as an output voltage of a low side charge pump, and functions to output high side drive voltage to a high side pre-driver circuit via the second diode.

Abstract: A device that includes: a first bus, connected between a first logic and a first circuit; a group of second buses connected between the first logic and between multiple non-high impedance circuit access logics associated with multiple circuits; wherein each circuit access logic is adapted to: (i) provide to the first logic, a circuit write value during a circuit writing period and during an idle period that follows the circuit writing period and ends when another circuit is allowed to write; and (ii) provide a default value when another circuit is allowed to write; and wherein the first logic is adapted to alter a state of the first bus in response to a change between two consecutive circuit write values.

Abstract: A method and an apparatus for controlling voltage level and clock signal frequency supplied to a system. The method includes: receiving at least one activity related signal; determining a voltage level and a clock signal frequency to be provided to the system by applying a first policy for increasing the voltage level and clock signal frequency and a second policy for decreasing the voltage level and clock signal frequency, whereas the first policy differs from the second policy; and configuring a voltage source and a clock signal source in response to the determination.

Abstract: A semiconductor package (10) uses a plurality of thermal conductors (56-64) that extend upward within an encapsulant (16) from one or more thermal bond pads (22, 24, 26) on a die (14) to disperse heat. The thermal conductors may be bond wires or conductive stud bumps and do not extend beyond a lateral edge of the die. One or more of the thermal conductors may be looped within the encapsulant and exposed at an upper surface of the encapsulant. In one form a heat spreader (68) is placed overlying the encapsulant for further heat removal. In another form the heat spreader functions as a power or ground terminal directly to points interior to the die via the thermal conductors. Active bond pads may be placed exclusively along the die's periphery or also included within the interior of the die.

Abstract: A method for forming an integrated circuit (280) comprises accessing (282) a library of primitive cells and edge codes in the formation of an integrated circuit layout. At least one edge code of at least one previously placed primitive cell (284) of the integrated circuit layout is used. A primitive cell is selected (286) from the library that is compatible with the at least one previously placed primitive cell and the selected primitive cell is placed into the integrated circuit layout adjacent the at least one previously placed primitive cell. The integrated circuit is manufactured (290) using the integrated circuit layout.

Abstract: A method of forming a semiconductor package (50 and 52) includes providing a substrate (14) having a die pad and bond pads on a first surface (20) and conductive pads (66, 68 and 74) on a second surface (22). An integrated circuit (IC) die (38) is attached to the die pad and the first surface (20) of the substrate (14) is attached to a lead frame (26). The substrate (14) is electrically connected to the lead frame (26), and the IC die (38) is electrically connected to the substrate (14) and the lead frame (26). The IC die (14), the electrical connections (40, 42 and 44), a portion of the substrate (14) and a portion of the lead frame (26) are encapsulated with a mold compound (46), forming a stackable package (48). The conductive pads (66, 68 and 74) on the second surface (22) of the substrate (14) are not encapsulated by the mold compound (46).

Abstract: A noise shaping arrangement for a phase locked loop includes a first order sigma-delta modulator arranged to provide a first-order quantized output and a feedback path output. A second order sigma-delta modulator is arranged to receive the feedback path output and provides a second order quantized output. A combination block combines the first and second order quantized outputs to provide a combined third order quantized output, which provides noise shaping with a frequency notch spectrum. In this way a new quantization noise shape of third order is provided, such that quantization phase noise may be lowered, the PLL loop bandwidth may be increased, modulation phase error may be reduced and PLL locking speed increased.

Abstract: A drive arrangement for activating a car safety device activation element, such as an air bag, comprises a drive circuit, which is coupled to the car safety device activation element. The drive circuit generates an activation signal which activates the car safety device. The arrangement includes a power supply transistor which is coupled in series with a power supply input of the drive circuit and an energy reservoir such as a capacitor. The arrangement further comprises control means which controls the supply voltage to the drive circuit by controlling the power supply transistor to operate in an active region to provide a voltage drop during activation of the car safety device activation element. Hence, a significant voltage drop and thus energy dissipation may be moved from the drive circuit to the power supply transistor. The drive circuit may therefore be reduced in size and the power supply transistor may be implemented in a cheap technology suitable for energy dissipation.

Abstract: At a particular stage in design of an integrated circuit, DFM improvements are identified which might conflict with design requirements applicable during a subsequent stage in the design flow. These DFM improvements are “reserved” that is, they are not implemented right away. However, an instance of a DFM-optimized version of this portion of the design is generated, characterized and stored. Meta information is associated with the reserved DFM improvements, for example locations in the design which correspond to the reserved DFM improvements are tagged. If, after the subsequent stage in the design flow, processing of the meta-information (tags) shows that the reserved DFM improvement does not actually conflict with the potentially-conflicting design requirement, the corresponding reserved DFM improvement is implemented, for example, by swapping-in the stored instance of the DFM-optimized version of this portion of the design.

Abstract: A first prefetch engine from a first plurality of prefetch engines is allocated to a first load instruction in response to a buffer miss of an iteration of the first load instruction in a program stream. The first plurality of prefetch engines include prefetch engines for prefetching data from memory to a buffer based on a predicted stride. A second prefetch engine from a second plurality of prefetch engines is allocated to the first load instruction in response to the buffer miss. The second plurality of prefetch engines include prefetch engines for prefetching data from memory to the buffer based on an instruction loop representative of a sequence of instructions that affect an address value associated with an allocated load instruction. One of the first or second prefetch engines is deallocated if the other prefetch engine achieves a prefetch performance greater than a first threshold value.

Abstract: A level shifter circuit for ensuring a high impedance state even in a transitional period such as when activating an external power supply while reducing power consumption. A latch circuit is set to a low level by a set circuit when a high potential power supply voltage increases. When the high potential power supply voltage exceeds a threshold voltage, a p-channel MOS transistor of the latch circuit is activated and the high potential power supply voltage is applied to a first transistor via a connection node. When a high potential enable signal having normal high level signal voltage is provided to a second transistor, which is connected to the first transistor, the reset circuit provides the high level signal to the latch circuit and stops the voltage application to the first transistor via the connection node.

Abstract: An edge seal structure and fabrication method are described. The edge seal structure includes a high impedance substrate containing a base material and a grounded floating edge seal that is on the substrate but is isolated from the base material. The edge seal contacts a first doped well in the substrate that has the same conductivity type as and is more heavily doped than the base material. The first doped well is in a second doped well that has a different conductivity type than the first doped well. The first and second doped wells and the base material form back-to-back series connected diodes. The wells are effectively connected to power and ground such that the diodes are reverse-biased. The edge seal is formed by a stack of conductive layers, at least some of which are surrounded by a stack of insulating layers.