Abstract: In one aspect, a data transmission rate of a message signal representing a bus message at a bus and a propagation delay between an occurrence of the message signal at a transmission output to the bus and an occurrence of the message signal at a receive input from the bus are determined. Bit error detection is selectively disabled responsive to a compatibility between the data transmission rate and the propagation delay. In another aspect, a bus line interface includes a transmit output and a receive input coupled to a bus line, a bit error detection module and a data rate module. The bus line interface also includes a bit error control module to selectively disable the bit error detection module based on a propagation delay between a signal and a reflected signal and based on a data transmission rate of the signal.

Abstract: An impedance matching between two integrated circuits is achieved using an impedance measuring circuit in the integrated circuit that contains an impedance-programmable output buffer (IPOB) that is to have its output impedance changed. The impedance measuring device is directly connected to the output of the IPOB so that it is detecting the same impedance that the IPOB will drive and thereby avoids the errors of measuring the resistance of a device that imperfectly models the actual impedance. The impedance measuring device is preferably an analog to digital (A/D) converter that provides a digital output relative to the voltage present on the same terminal as the output of the IPOB. By having the A/D converter on the same integrated circuit as the IPOB, communications difficulties between the A/D converter and the IPOB are minimal.

Abstract: A communication device comprising an internal power source, first and second receiver elements for receiving signals transmitted from the base station, and a processor selectively responsive to a modulation of the received signal to generate a data signal for transmission to the base station. The first receiver element has lower power consumption than the second receiver element does when energised. At least during a standby state of the device, the first receiver element is activated to detect the presence of a received signal, the second receiver element and the processing means being de-energised. The first receiver element is responsive to detection of a received signal to trigger an active state in which the second receiver element is activated to respond selectively to the frequency of the signal received to actuate the processor. The invention is applicable to vehicle access control systems, and tire pressure monitoring systems.

Abstract: An array of storage cells include a first source/drain region underlying a first trench defined in a semiconductor substrate and a second source/drain region underlying a second trench in the substrate. A charge storage stack lines each of the trenches where the charge storage stack includes a layer of discontinuous storage elements (DSEs). A control gate overlies the first trench. The control gate may run perpendicular to the trenches and traverse the first and second trenches. In another implementation, the control gate runs parallel with the trenches. The storage cell may include one or more diffusion regions occupying an upper surface of the substrate between the first and second trenches. The diffusion region may reside between first and second control gates that are parallel to the trenches. Alternatively, a pair of diffusion regions may occur on either side of a control gate that is perpendicular to the trenches.

Abstract: Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.

Abstract: An integrated circuit device includes a first latch having a first input to receive a first predecode value, a second input to receive a first clock signal, and an output to provide a latched first predecode value responsive to an edge event of the first clock signal. The integrated circuit device further includes a memory component. The memory component includes an input to receive the latched first predecode value and the latched second predecode value, a first bit line, and a plurality of word lines coupled to the first bit line. Each word line is associated with a corresponding bit of the latched second predecode value. The integrated circuit device further includes logic having an input to receive the corresponding bit of the latched first predecode value. The logic is to precharge the first bit line directly responsive to only a value at the corresponding bit of the latched first predecode value.

Abstract: An RF carrier generator comprises a circuit for sequentially counting as a function of a randomized offset and time interval, and a memory coupled to the sequential counting circuit. The memory stores samples of a desired Sigma-Delta modulator sequence bit stream. Responsive to an output of the sequential counting circuit, the memory sequentially outputs a single-bit output bit stream of a series of partial sequences of the desired Sigma-Delta modulator sequence bit stream. A method is also disclosed.

Abstract: A method of packaging an integrated circuit die (12) includes the steps of loading an array of soft conductive balls into recesses formed in a platen and locating the platen in a first part of a mold cavity. A second part of the mold is pressed against the balls to flatten a surface of the balls. A first mold compound then is injected into the mold cavity such that the mold compound surrounds exposed portions of the balls. The balls are removed from the platen and a first side of an integrated circuit die is attached to the balls such that the die is surrounded by the balls. Die bonding pads on a second side of the die are electrically connected to respective ones of the balls surrounding the die, and then the die, the electrical connections, and a top portion of the conductive balls is encapsulated with a second mold compound. The result is an encapsulated IC having a bottom side with exposed balls.

Abstract: Convolutionally encoding a data stream includes inputting a first block of two or more bits in parallel into a shift register. A number of intermediate calculations are performed in parallel using a number of respective delayed shift register outputs; and said number of intermediate calculations are output to form a convolutionally encoded sequence. In one example, a register (of individual bits stored in words), is set up. The register is longer than the constraint length means that a relatively large number of input bits can be read from memory only once, thus avoiding many independent moves of operands to and from memory. Since the register is longer than the constraint length, the register need only be shifted once for every ‘a+1’ input bits, rather than once for each bit.

Abstract: A data processing system (10) has a debug module (26) that selectively generates one or more debug messages that are specific to a Direct Memory Access (DMA) controller device (16) in the system. A control register(70) enables which of the DMA debug messages are provided. The beginning and end of DMA transfer activity is provided including when minor loop iterations start and complete. Latency information indicating system latency between a channel request and actual initiation of the request for each DMA transfer may also be included in a debug message. One of the debug messages provides periodic status of a predetermined DMA channel under control of a control register (80). At least one of the debug messages implements a watchpoint function, such as indicating when a transfer starts or ends. The debug module may be centralized in the system or distributed among each of predetermined system units.

Abstract: A method for operating a memory device includes selecting a cell comprising an array of word lines, selecting a word line within said array and applying an operating voltage to said selected word line. A shielding voltage is also applied to the closest adjacent facing word line of said selected word line. This may prevent unintended, program, read, or erase of said unselected word line. The remainder of unselected word lines can be floated.

Abstract: According to the embodiments to the present disclosure, the process of making a dual strained channel semiconductor device includes integrating strained Si and compressed SiGe with trench isolation for achieving a simultaneous NMOS and PMOS performance enhancement. As described herein, the integration of NMOS and PMOS can be implemented in several ways to achieve NMOS and PMOS channels compatible with shallow trench isolation.

Abstract: A semiconductor device with strain enhancement is formed by providing a semiconductor substrate and an overlying control electrode having a sidewall. An insulating layer is formed adjacent the sidewall of the control electrode. The semiconductor substrate and the control electrode are implanted to form first and second doped current electrode regions, a portion of each of the first and second doped current electrode regions being driven to underlie both the insulating layer and the control electrode in a channel region of the semiconductor device. The first and second doped current electrode regions are removed from the semiconductor substrate except for underneath the control electrode and the insulating layer to respectively form first and second trenches. An insitu doped material containing a different lattice constant relative to the semiconductor substrate is formed within the first and second trenches to function as first and second current electrodes of the semiconductor device.

Abstract: A method for forming a semiconductor device including forming a semiconductor substrate; forming a gate electrode over the semiconductor substrate having a first side and a second side, and forming a gate dielectric under the gate electrode. The gate dielectric has a first area under the gate electrode and adjacent the first side of the gate electrode, a second area under the gate electrode and adjacent the second side of the gate electrode, and a third area under the gate electrode that is between the first area and the second area, wherein the first area is thinner than the second area, and the third area is thinner than the first area and is thinner than the second area.

Abstract: A method of making an exposed-pad ball-grid array package (11) includes applying a conductive sheet (16) to an adhesive tape (18). Stamping the conductive sheet (16) to form a die pad (24) and separating the remainder (26) of the sheet from the adhesive tape (18) so that only the die pad (24) remains on the adhesive tape (18). A substrate (28) is applied to the adhesive tape (18) proximate to the die pad (24). A die (30) is attached to the die pad (24) and electrically coupled to the substrate (28). An encapsulant (34) is formed around at least a portion of the die (30), the die pad (24) and the substrate (28) above the adhesive tape (18). The adhesive tape (18) is removed from the die pad (24), substrate (28) and encapsulant (34). Conductive balls (36) are attached to the substrate (28).

Abstract: A method for improving manufacturability of a design includes performing space or enclosure checks on multiple interacting layers of a layout design and then using the resulting space or enclosure data to move predetermined feature edges in an altered design database to decrease the risk of features widths, feature spaces or feature enclosures being patterned smaller than designed. In some embodiments, the upsized features are larger in the wafer circuit pattern than are drawn in a designed database. The method for improving manufacturability of a design, in some embodiments, is stored on a computer readable storage medium.

Abstract: A phase locked loop filter comprising a first capacitor for connecting to a first charge pump path; and a parallel resistor/capacitor circuit for connecting to a second charge pump path with the resistor/capacitor circuit having a second capacitor; wherein the first capacitor and second capacitor are connected in series to allow a voltage associated with the first capacitor and a voltage associated with the parallel resistor/capacitor circuit to be added together.

Abstract: Apparatus for sensing a current across a known resistor comprising a switched capacitor network and an amplifier having an input coupled to an output of the switched capacitor network. The switched capacitor network is configured to sample first and second reference potentials indicating the current. The amplifier is configured to produce first and second amplified potentials at an output of the amplifier based on the first and second reference potentials.

Abstract: An EUV mask (10, 309) includes an opening (26) that helps to attenuate and phase shift extreme ultraviolet radiation using a subtractive rather than additive method. A first embedded layer (20) and a second embedded layer (21) may be provided between a lower multilayer reflective stack (14) and an upper multilayer reflective stack (22) to ensure an appropriate and accurate depth of the opening (26), while allowing for defect inspection of the EUV mask (10, 309) and optional defect repair. An optional ARC layer (400) may be deposited in region (28) to reduce the amount of reflection within dark region (28). Alternately, a single embedded layer of hafnium oxide, zirconium oxide, tantalum silicon oxide, tantalum oxide, or the like, may be used in place of embedded layers (20, 21). Optimal thicknesses and locations of the various layers are described.

Abstract: A Schottky device having a plurality of unit cells, each having a Schottky contact portion, surrounded by a termination structure that causes depletion regions to form in a vertical and horizontal direction, relative to a surface of the device, during a reverse bias voltage condition.