Abstract: A semiconductor device having a gate with a thin conductive layer is described. As the physical dimensions of semiconductor devices are scaled below the sub-micron regime, very thin gate dielectrics are used. One problem encountered with very thin gate dielectrics is that the carriers can tunnel through the gate dielectric material, thus increasing the undesirable leakage current in the device. By using a thin layer for conductive layer, quantum confinement of carriers within conductive layer can be induced. This quantum confinement removes modes which are propagating in the direction normal to the interfacial plane from the Fermi level. Thus, the undesirable leakage current in the device can be reduced. Additional conductive layers may be used to provide more carriers.

Abstract: A processing device asynchronously enters a first mode in response to an application of power at the processing device. The processing device receives a wake signal at the processing device subsequent to entering the first mode. The processing device asynchronously enters a second mode from the first power mode in response to receiving the wake signal. A clock at the processing device is disabled in the first mode and enabled in the second mode.

Abstract: A process of forming an electronic device can include forming a patterned oxidation-resistant layer over a semiconductor layer that overlies a substrate, and patterning the semiconductor layer to form a semiconductor island. The semiconductor island includes a first surface and a second surface opposite the first surface, and the first surface lies closer to the substrate, as compared to the second surface. The process can also include forming an oxidation-resistant material along a side of the semiconductor island or selectively depositing a semiconductor material along a side of the semiconductor island. The process can further include exposing the patterned oxidation-resistant layer and the semiconductor island to an oxygen-containing ambient, wherein a first portion of the semiconductor island along the first surface is oxidized during exposing the patterned oxidation-resistant layer, the semiconductor island, and the oxidation-resistant material to an oxygen-containing ambient.

Abstract: An integrated circuit that has logic and a static random access memory (SRAM) array has improved performance by treating the interlayer dielectric (ILD) differently for the SRAM array than for the logic. The N channel logic and SRAM transistors have ILDs with non-compressive stress, the P channel logic transistor ILD has compressive stress, and the P channel SRAM transistor at least has less compressive stress than the P channel logic transistor, i.e., the P channel SRAM transistors may be compressive but less so than the P channel logic transistors, may be relaxed, or may be tensile. It is beneficial for the integrated circuit for the P channel SRAM transistors to have a lower mobility than the P channel logic transistors. The P channel SRAM transistors having lower mobility results in better write performance; either better write time or write margin at lower power supply voltage.

Abstract: A device and method for error correction are disclosed. The device includes a memory control module to disable error processing for a memory location depending on the state of a status indicator. The status indicator can be set so that error processing is disabled when valid error correction and detection information for the memory location is not available, such as after a reset or power-on event. In addition, the memory control module can promote partial write requests to full write requests when error processing is disabled to ensure that valid error detection and correction data is calculated for the memory location. By disabling error processing until valid error detection and correction information is available, the number of unnecessary or invalid error processing operations is reduced, thereby conserving device resources.

Abstract: Mechanical stress control may be achieved using materials having selected elastic moduli. These materials may be selectively formed by implantation, may be provided as a plurality of buried layers interposed between the substrate and the active area, and may be formed by replacing selected portions of one or more buried layers. Any one or more of these methods may be used in combination. Mechanical stress control may be useful in the channel region of a semiconductor device to maximize its performance. In addition, these same techniques and structures may be used for other purposes besides mechanical stress control.

Abstract: Built-in self test (BIST) capabilities are expanded to provide IDDQ testing of semiconductor chips. Conventional BIST modules generate vectors from a set of pseudo-random pattern generator (PRPG) values. The pseudo-random vectors generated by the set of PRPG values are simulated, and those vectors best suited for an IDDQ test are selected. Each of the IDDQ vectors are identified in a test pattern. During subsequent testing, an IDDQ test of the semiconductor chip can be performed whenever the current test vector applied by the logic BIST corresponds to one of the predetermined IDDQ states. A single test pattern based upon vectors generated by the logic BIST module can therefore be used to perform both IDDQ and stuck-at testing.

Abstract: An analog filter (10) having a bandwidth tracking circuit includes an analog filter element (14) and a digital tracking loop (22). The digital tracking loop (22) compares a magnitude difference to a predetermined threshold to generate an error signal. The magnitude difference is determined during a closed loop bandwidth calibration by subtracting a first magnitude of an analog input signal over a predetermined frequency range to a second magnitude of the analog input signal over the predetermined frequency range located near the bandwidth frequency. Use of the digital tracking loop (22) provides a digital approach for achieving bandwidth tracking of an analog filter without the need for achieving any manufacturing process matching between the analog filter and the tracking circuit itself. The analog filter element (14) may be either a lowpass, highpass, bandpass, active or passive filter element.

Abstract: A bond pad (10) has a probe region (14) and a wire bond region (12) that are substantially non-overlapping. In one embodiment, the bond pad (10) is connected to a final metal layer pad (16) and extends over an interconnect region (24). The bond pad (10) is formed from aluminum and the final metal layer pad (16) is formed from copper. Separating the probe region (14) from the wire bond region (12) prevents the final metal layer pad (16) from being damaged by probe testing, allowing for more reliable wire bonds. In another embodiment, the probe region (14) extends over a passivation layer (18). In an application requiring very fine pitch between bond pads, the probe regions (14) and wire bond regions (12) of a plurality of bond pads formed in a line may be staggered to increase the distance between the probe regions (14). In addition, forming the bond pads (10) over the interconnect region (24) reduces the size of the integrated circuit.

Abstract: An integrated circuit includes a memory (10). The memory (10) includes an array (12) of non-volatile memory cells. Each memory cell (14) of the array (12) includes a plurality of terminals comprising: a control gate, a charge storage region, a source, a drain, a well terminal, and a deep well terminal. Following an erase operation of the array (12), the erase voltages are discharged from each of the memory cells. A discharge rate control circuit (11) controls the discharging of terminals of the memory cell. The discharge rate control circuit (11) includes, for example, a plurality of parallel-connected transistors (112) coupled between the array (12) of non-volatile memory cells and a power supply terminal.

Abstract: A semiconductor device is provided that includes a leadframe, a die, and a clip. The leadframe has a flag and a power pad. The die is coupled to the flag. The clip comprises a die retaining section and a pad section. The die is coupled to the die retaining section, and the pad section extends from the die retaining section. The pad section is coupled to the power pad. Methods for forming the semiconductor device are provided as well.

Abstract: Techniques are provided for sensing a first current produced by an active circuit component. According to these techniques, a current sensor is disposed over the active circuit component. The current sensor includes a Magnetic Tunnel Junction (“MTJ”) core disposed between a first conductive layer and a second conductive layer. The MTJ core can be used to sense the first current and produce a second current based on the first current sensed at the MTJ core.

Abstract: A method and system for testing an electronic device is disclosed. The method includes loading a first test into a test pattern generator of a first device and generating a first test pattern at the test pattern generator. A second test seed is loaded into the test pattern generator while the first test pattern is being generated. In one embodiment, the state of the test pattern generator is modified based upon the second test seed, and the first test seed.

Abstract: A first gate of a multi-gate transistor within a pass gate can be provided with a bias voltage to alter the bias point of the multi-gate transistor. The bias point can be controlled differently during different phases of memory cell operation and the bias point can provide operational improvements during each phase of memory cell operation. In a specific configuration the multi-gate semiconductor device has a first current electrode connected to a first node of a bit cell, a second current electrode connected to a bit line, and a second gate electrode connected to a read/write line, wherein the control module can alter the bias point of the multi-gate semiconductor differently during different phases of memory cell operation. In one embodiment a FinFET can be connected in a parallel configuration with the multi-gate transistor.

Abstract: A method provides an interconnect structure having enhanced structural support when underlying functional metal layers are insulated with a low modulus dielectric. A first metal layer having a plurality of openings overlies the substrate. A first electrically insulating layer overlies the first metal layer. A second metal layer overlies the first electrically insulating layer, the second metal layer having a plurality of openings. An interconnect pad that defines an interconnect pad area overlies the second metal layer. At least a certain amount of the openings in the two metal layers are aligned to improve structural strength of the interconnect structure. The amount of alignment may differ depending upon the application and materials used. A bond wire connection or conductive bump may be used with the interconnect structure.

Abstract: A device is disclosed having a first Field Effect Transistor having a channel region controlled by a gate, a second Field Effect Transistor having a first channel region substantially controlled by a first gate, and a second channel region substantially controlled by a second gate. The gate of the first Field Effect Transistor and the first gate of the second Field Effect Transistor are coupled to a memory write line. The second gate of the second Field Effect Transistor receives a control signal from a memory bit cell.

Abstract: An electronic device can have an insulating layer lying between a first semiconductor layer and a base layer. A second semiconductor layer, having a different composition and stress as compared to the first semiconductor layer, can overlie at least a portion of the first semiconductor layer. In one embodiment, a first electronic component can include a first active region that includes a first portion of the first and the second semiconductor layers. A second electronic component can include a second active region that can include a second portion of the first semiconductor layer. Different processes can be used to form the electronic device. In another embodiment, annealing a workpiece can be performed and the stress of at least one of the semiconductor layers can be changed. In a different embodiment, annealing the workpiece can be performed either before or after the formation of the second semiconductor layer.

Abstract: A method includes determining a first operational characteristic representative of an operational speed of a circuit device at a first time. The method further includes receiving an input signal at an input of a first latch of the circuit device and receiving an output signal at an input of a second latch of the circuit device. The method additionally includes delaying a clock signal by a first delay to provide a first adjusted clock signal and delaying the clock signal by a second delay to provide a second adjusted clock signal. In one embodiment, the first delay and the second delay are based on the first operational characteristic. The method further includes latching the input signal at the first latch responsive to the first adjusted clock signal and latching the output signal at the second latch responsive to the second adjusted clock signal.

Abstract: A level shifter circuit including first and second circuits and a protection layer. The first circuit receives an input signal and switches first and second nodes to opposite states within a first voltage range between first and second supply voltages. The second circuit switches the third and fourth nodes to opposite states within a second voltage range between third and fourth supply voltages in response to switching of the first and second nodes. The protection layer couples the first and second nodes to third and fourth nodes via respective first and second isolation paths. The isolation paths operate to keep the first and second nodes within the first voltage range and to keep the third and fourth nodes within the second voltage range. Isolation enables the use of thin gate-oxide devices for speed while extending the voltage range beyond the maximum voltage allowable for a single thin gate-oxide device.

Abstract: A voltage regulator includes a first and second amplifier stage, an output stage, and a variable zero circuit. The first amplifier stage is coupled to receive a reference voltage and introduces a first pole of the voltage regulator. The second amplifier stage is coupled to the first amplifier stage and introduces a second pole of the voltage regulator. The output stage is coupled to the second amplifier stage, has an output driver, and is coupled to provide an output voltage based on the reference voltage. The variable zero circuit is coupled to the first amplifier stage, the second amplifier stage, and the output stage. The variable zero circuit provides a zero to compensate for at least one of the first pole or the second pole of the voltage regulator based on a gate to source voltage of the output driver and a drain to source voltage of the output driver.