Abstract: Methods and related structures are disclosed for forming contact landing regions in split-gate NVM (non-volatile memory) systems. A dummy select gate structure is formed while also forming select gates for split-gate NVM cells. A control gate layer is formed over the select gates and the dummy select gate structure, as well as an intervening charge storage layer. The control gate material will fill in gaps between the select gate material and the dummy select gate material. A non-patterned spacer etch is then used to etch the control gate layer to form a contact landing region associated with the dummy select gate structure while also forming spacer control gates for the split-gate NVM cells. The disclosed embodiments provide improved (e.g., more planar) contact landing regions without requiring additional processing steps and without increasing the pitch of the resulting NVM cell array.

Abstract: An updated integrated circuit (IC) design is generated by applying a histogram-based algorithm to an invalid, current IC design. The histogram-based algorithm includes worst negative slack (WNS) optimization followed by total negative slack (TNS) optimization. WNS optimization uses the slack histogram for the current IC design to generate an invalid, but improved, intermediate IC design. TNS optimization uses the slack histogram of the intermediate IC design to generate the updated IC design.

Abstract: A method for determining a phase angle between voltage applied to a winding of the electric motor and an electric current flowing through the winding may include receiving a signal from the electric motor, including a value of a voltage applied to a winding of the electric motor. The method may also include determining a value of an electric current flowing through the winding and determining a phase angle between the voltage applied to the winding and the electric current flowing through the winding. The method may also include determining a speed or a stall state of the electric motor.

Abstract: Protection device structures and related fabrication methods and devices are provided. An exemplary device includes a first interface, a second interface, a first protection circuitry arrangement coupled to the first interface, and a second protection circuitry arrangement coupled between the first protection circuitry arrangement and the second interface. The second protection circuitry arrangement includes a first transistor and a diode coupled to the first transistor, wherein the first transistor and the diode are configured electrically in series between the first protection circuitry arrangement and the second interface.

Abstract: A processor of a plurality of processors includes a processor core and a message manager. The message manager is in communication with the processor core. The message manager to receive a message from a second processor of the plurality of processors, to identify a classification rule for the message based on bits in a header of the message, and to create a queue identifier for the message using bits of a payload of the message, wherein the queue identifier is associated with a queue of the processor core.

Abstract: A method of switch detection is disclosed that comprises, enabling a low power mode on a switch detection device, activating a first detection circuit for detecting, at a first expiration of a first polling time interval, a first switch state of a first switch having a first priority level, the first switch state including one of a first open state and a first closed state, comparing the detected first switch state with a prior first switch state, and activating a second detection circuit for detecting, at a second expiration of a second polling time interval, a second switch state of a second switch having a second priority level, the second switch including one of a second open state and a second closed state, and the second polling time interval being greater than the first polling time interval, and the second priority level being different from the first priority level.

Abstract: Embodiments of an integrated resistor may be incorporated into monolithic transistor circuits and packaged RF amplifier devices. An embodiment of an integrated resistor includes a semiconductor substrate and a resistor formed over the top surface of the semiconductor substrate from resistive material. The resistor includes at least first and second resistive sections. The first resistive section is tapered so that the first resistive section widens toward an input end of the resistor. The second resistive section is coupled in series with the first resistive section. According to a further embodiment, the second resistive section also is tapered so that the second resistive section widens toward an output end of the resistor. According to another further embodiment, a third resistive section with one or more meanders is coupled in series between the first and second resistive sections.

Abstract: A system for filtering received data units comprises a memory structure adapted to store a plurality of P tables, each table comprising a plurality of filter-keys and corresponding indices, each filter-key comprising one or more key-bits each corresponding to a filter configurable by a corresponding filter configuration value; and at least one processing element connected to the memory structure and comprising a digesting module adapted to generate the one or more key-bits of each of the filter-keys of the tables by splitting the corresponding filter configuration value into P configuration-pieces each having a number of bits, and to use each configuration-piece as a first index for setting a corresponding key-bit in the corresponding table; and a filtering module adapted to receive and split the data units into P data-pieces each having the number of bits, for each data-piece use the data-piece as a second index for reading the corresponding filter-key from the corresponding table, and generate a pass-indica

Abstract: Methods and systems are disclosed for imminent read failure detection based upon changes in error voltage windows for non-volatile memory (NVM) cells. In certain embodiments, data stored within an array of NVM cells is checked at a first time using a diagnostic mode and high/low read voltage sweeps to determine a first error voltage window where high/low uncorrectable errors are detected. Stored data is then checked at a second time using the diagnostic mode and high/low read voltage sweeps to determine a second error voltage window where high/low uncorrectable errors are detected. The difference between the error voltage windows are then compared against a voltage difference threshold value to determine whether or not to indicate an imminent read failure condition. An address sequencer, error correction code (ECC) logic, and a bias generator can be used to implement the imminent failure detection.

Abstract: A micro controller unit including an error indicator hardware module, the error indicator module being arranged to respond to event signals representative of internal and external fault and error events perturbing the micro controller unit function by registering in non-volatile memory a record of the nature of each of the events, wherein the record of the events is inaccessible to alteration.

Abstract: Embodiments of a symmetric multi-processing (SMP) system can provide full affinity of a connection to a core processor when desired, even when ingress packet distribution, protocol processing layer and applications may autonomously process packets on different cores of the SMP system. In an illustrative embodiment, the SMP system can include a server application that is configured to create a plurality of tasks and bind the plurality of tasks to a plurality of core processors. One or more of the plurality of tasks are configured to create a corresponding listening endpoint socket, bind and listen on a protocol address that is common to the plurality of tasks.

Abstract: A flying cap, level shifter has a capacitor with an upper plate connected to (i) a hybrid power supply (VDDH-VDDL) by an n-type transistor and (ii) a relatively high-voltage power supply VDDH by a p-type transistor. Both of the transistors are controlled by a voltage at the level shifter's output node, which is driven to either VDDH or ground. As such, one of the two transistors will always be on, such that the flying capacitor will be continuously recharged to a voltage difference that ensures that the level shifter will operate properly.

Abstract: Methods and systems are disclosed for imminent read failure detection using high/low read voltage levels. In certain embodiments, data stored within an array of non-volatile memory (NVM) cells is checked using read voltage levels below and above a normal read voltage level. An imminent read failure is then indicated if errors are detected within the same address for both voltage checks. Further, data stored can be checked using read voltage levels that are incrementally decreased below and incrementally increased above a normal read voltage level. An imminent read failure is then indicated if read errors are detected within the same address for both voltage sweeps and if high/low read voltage levels triggering faults differ by less than a predetermined threshold value. An address sequencer, error correction code (ECC) logic, and a bias generator can be used to implement the imminent failure detection.

Abstract: A method of measuring a negative voltage using a device including a first transistor and a second transistor is provided. The first transistor is coupled to the second transistor and the negative voltage is supplied to a gate of the second transistor. A plurality of voltages are provided to a source input of the device. For each voltage of the plurality of voltages, whether a first voltage across the first transistor is equivalent to a second voltage across the second transistor is determined, and, when the first voltage across the first transistor is equivalent to the second voltage across the second transistor, the negative voltage is determined by measuring a magnitude of a positive voltage of the device.

Abstract: An integrated circuit (IC) includes a reference voltage generator, a voltage regulator, a reset controller, and a voltage monitoring circuit. The reference voltage generator generates first and second reference voltages, and the voltage regulator generates a supply voltage. The reset controller stabilizes the first and second reference voltages in a first predetermined time period, and generates a power down signal after the first predetermined time period. The voltage monitoring circuit compares a level of the supply voltage with a level of the second reference voltage after the first predetermined time period and generates a (low) voltage monitor signal. The reset controller also generates a (high) reset signal when the supply voltage is greater than the second reference voltage.

Abstract: An integrated circuit package includes a semiconductor die attached to a package support. The die has a plurality of peripheral bond pads along a periphery of the die and a first bond pad on an interior portion of the die wherein the first bond pad is a power supply bond pad. A conductive distributor is over the die and within a perimeter of the die and has a first opening. The plurality of bond pads are located between the perimeter of the die and a perimeter of the conductive distributor. The first bond pad is in the first opening. A first bond wire is connected between the first bond pad and the conductive distributor. A second bond wire is connected between a first peripheral bond pad of the plurality of peripheral bond pads and the conductive distributor.

Abstract: Methods of forming gold-aluminum electrical interconnects are described. The method may include interposing a diffusion retardant layer between the gold and the aluminum, the diffusion retardant layer including regions containing and regions substantially devoid of a diffusion retardant material; bringing into contact the diffusion retardant layer, the gold, and the aluminum; forming alloys of gold and the diffusion retardant material in regions containing the material and forming gold-aluminum intermetallic compounds in regions substantially devoid of the material; and forming a continuous electrically conducting path between the aluminum and the gold. A structure for gold-aluminum interconnect is provided. The structure may include an aluminum alloy bond pad and a diffusion retardant layer in contact with the bond pad, the diffusion retardant layer including regions containing and regions substantially devoid of a diffusion retardant material.

Abstract: An integrated circuit (IC) in an unresponsive radio equipment (RE) node includes a common public radio interface (CPRI) controller, a processor, and a system reset controller that includes an L1 (Layer 1) reset controller. The CPRI controller generates a reset request signal based on a CPRI reset request received from an RE controller (REC). The L1 reset controller generates a traffic stop signal based on the reset request signal. The CPRI controller generates a traffic idle signal based on the traffic stop signal. The L1 reset controller receives the traffic idle signal before a predetermined time period and generates a system reset signal for resetting the processor, thereby recovering the unresponsive RE node without disrupting the network topology of a communication system that includes the REC and multiple RE nodes including the unresponsive RE node connected via a CPRI link.

Abstract: Methods for fabricating microelectronic packages, such as Fan-Out Wafer Level Packages, and microelectronic packages are provided. In one embodiment, the method includes placing a first semiconductor die on a temporary substrate, forming an electrically-conducive trace in contact with at least one of the first semiconductor die and the temporary substrate, and encapsulating the first semiconductor die and the electrically-conductive trace within a molded panel. The temporary substrate is removed to reveal a frontside of the molded panel through which the electrically-conducive trace is at least partially exposed. At least one redistribution layer is formed over the frontside of the molded panel, the at least one redistribution layer comprises an interconnect line in ohmic contact with the electrically-conducive trace.

Abstract: Methods and systems are disclosed for imminent read failure detection based upon unacceptable wear for non-volatile memory (NVM) cells. In certain embodiments, a first failure time is recorded when a first diagnostic mode detects an uncorrectable error within the NVM cell array using a first set of read voltage levels below and above a normal read voltage level. A second failure time is recorded when a second diagnostic mode detects an uncorrectable error within the NVM cell array using a second set of read voltage levels below and above a normal read voltage level. The first and second failure times are then compared against a threshold wear time value to determine whether or not an imminent read failure is indicated. The diagnostic modes can be run separately for erased NVM cell distributions and programmed NVM cell distributions to provide separate wear rate determinations.