Abstract: Generating a target layout of an integrated circuit includes providing a source layout comprising one or more source pcells having one or more shapes; providing a set of connectivity constraints for connecting each shape of each source pcell to none, one, or more other components of the integrated circuit; for each shape of each source pcell, determining a corresponding target shape having a contour composed of edges with defined lengths, inserting none, one, or more edges into the contour of the shape, or into the contour of the corresponding target shape, determining a corresponding edge of the corresponding target shape; for each edge, defining an edge length constraint for constraining the edge to have the length of the edge of the corresponding target shape; applying a legalization procedure to the source layout based on the connectivity constraints, the target design constraints, and the edge length constraints.

Abstract: An apparatus and method for monitoring general purpose input output, GPIO, signals at GPIO pins of a GPIO port of a system on chip, SoC. The apparatus comprises a first checksum generation unit adapted to generate a first checksum on the basis of GPIO bits stored in GPIO registers of the SoC, being connected via corresponding input output, IO, pad circuits to provide analog GPIO signals at the GPIO pins. A second checksum generation unit is adapted to generate a second checksum on the basis of the analog GPIO signals at the GPIO pins representing the GPIO bits. Checker logic is adapted to compare the first checksum generated by the first checksum generation unit with a second checksum generated by the second checksum generation unit.

Abstract: A buck converter includes a comparator having first and second gain stages that operate in compare and auto-zero modes. The comparator measures voltage drop across an N-channel transistor to determine when current through an inductor reaches zero. When the inductor current reaches zero, the N-channel transistor becomes inactive to prevent a reduction in efficiency caused by allowing negative inductor current to draw current from a load. The comparator is then placed in a low power state. When the comparator is not in a compare mode, the comparator can operate in an auto-zero mode to cancel offset when measuring the input of the comparator.

Abstract: A semiconductor device package that incorporates a combination of ceramic, organic, and metallic materials that are coupled using silver is provided. The silver is applied in the form of fine particles under pressure and a low temperature. After application, the silver forms a solid that has a typical melting point of silver, and therefore the finished package can withstand temperatures significantly higher than the manufacturing temperature. Further, since the silver is an interfacial material between the various combined materials, the effect of differing material properties between ceramic, organic, and metallic components, such as coefficient of thermal expansion, is reduced due to low temperature of bonding and the ductility of the silver.

Abstract: A die temperature measurement system (300) includes an external test environment setup (352) and an integrated circuit (302). The external test environment setup (352) includes means to force and accurately measure electrical variables. The integrated circuit (302) includes a bipolar transistor (325); a selectable switch (340) for selecting from plurality of integrated resistances (342, 344) to be coupled in series between a base (322) of the bipolar transistor and a first input (362); and a selectable-gain current mirror (310) with a gain, a programmable current-mirror output coupled to the collector (326) of the bipolar transistor. The bipolar transistor and optional diodes (335) are sequentially biased with a set of proportional collector current levels. For each bias condition, the temperature-dependent voltage produced by the structure is extracted and stored. Die temperature is obtained through algebraic manipulation (450) of this data. Parasitic resistance and I/O pad leakage effects are canceled.

Abstract: An integrated circuit with a testable power-on-reset (POR) circuit includes a voltage divider, an inverter, a level-shifter, a buffer and a flip-flop. The voltage divider receives a first supply voltage and generates a second supply voltage. The POR circuit receives the second supply voltage and generates a POR voltage signal when the second supply voltage exceeds a POR de-assertion threshold. The level-shifter receives the POR voltage signal and an inverted POR voltage signal from the inverter circuit and generates a level-shifted POR voltage signal at a voltage level of the first supply voltage. The buffer receives the level-shifted POR voltage signal and outputs a delayed level-shifted POR voltage signal. The flip-flop receives the first supply voltage as data input, the delayed level-shifted POR voltage signal as clock input, the level-shifted POR voltage signal as reset input, and outputs a voltage-monitor signal at the voltage level of the first supply voltage.

Abstract: A signal delay cell for use in resolving hold time violations in an IC has a first multiplexer having a first functional data input node and a scan data input node TI and a second multiplexer having a second functional data input node, a second input node connected to the output of the first multiplexer and a flip-flop module. The propagation of a data input signal applied to the first multiplexer is delayed, and the hold margin of the flip-flop module is increased by transit through the first multiplexer. The signal delay cell is available to replace a flip-flop having a scan data hold problem, and also for use in solving a functional data violation in the same or another cell.

Abstract: A data processing system includes a processor configured to execute processor instructions and a branch target buffer having a plurality of entries. Each entry is configured to store a branch target address and a lock indicator, wherein the lock indicator indicates whether the entry is a candidate for replacement, and wherein the processor is configured to access the branch target buffer during execution of the processor instructions. The data processing system further includes control circuitry configured to determine a fullness level of the branch target buffer, wherein in response to the fullness level reaching a fullness threshold, the control circuitry is configured to assert the lock indicator of one or more of the plurality of entries to indicate that the one or more of the plurality of entries is not a candidate for replacement.

Abstract: A capacitance-to-voltage interface circuit is utilized to obtain a voltage corresponding to a detected capacitance differential, which may be associated with the operation of a capacitive sensing cell. The interface circuit includes a capacitive sensing cell, an operational amplifier adapted for selective coupling to the capacitive sensing cell, a feedback capacitor for the operational amplifier, a load capacitor for the operational amplifier, and a switching architecture associated with the capacitive sensing cell, the operational amplifier, the feedback capacitor, and the load capacitor. During use, the switching architecture reconfigures the capacitance-to-voltage interface circuit for operation in a plurality of different phases. The different operational phases enable the single operational amplifier to be used for both capacitance-to-voltage conversion and voltage amplification.

Abstract: An angular rate sensor (20) includes a drive mass (36) flexibly coupled to a substrate (22). A sense mass (42) is suspended above the substrate (22) is and flexibly connected to the drive mass (36) via flexible support elements (44). A quadrature compensation electrode (24) is associated with the drive mass (36) and a sense electrode (28) is associated with the sense mass (42). The drive mass (36) and the sense mass (42) oscillate together relative to a sense axis (50) in response to quadrature error. The quadrature error produces a signal error component (78) between the quadrature compensation electrode (24) and the drive mass (36) and a signal error component (76) between the sense electrode (28) and the sense mass (42). The compensation and sense electrodes (24, 28) are coupled in reverse polarity so that the signal error component (78) substantially cancels the signal error component (76).

Abstract: A system comprises a first plurality of flip-flop circuits, a second plurality of flip-flop circuits, and a gating control module. At a first processor frequency, gating of clock signals is enabled for the first and second plurality of flip-flop circuits. At a second processor frequency, gating of a first of the clock signals is disabled for the first plurality of flip-flop circuits and gating of a second of the clock signals is enabled for the second plurality of flip-flop circuits.

Abstract: A semiconductor package includes a semiconductor die having an active face and dielectric layers disposed on the active face of the semiconductor die. At least one opening is formed through the dielectric layers and extends from a non-bond pad area of the active face to an exterior surface of the dielectric layers. An electrically conductive layer is formed in the opening and is in physical contact with the active face of the semiconductor die. A thermally conductive material fills the opening to form a thermal via for dissipating heat away from the semiconductor die.

Abstract: An integrated circuit having reduced power consumption includes a clock-gating cell, a transistor and a flip-flop. The clock-gating cell receives a dynamic enable signal, generates a latched-enable signal and gates a clock signal provided to the flip-flop. The flip-flop includes first and second latches. The transistor receives an inverted latched-enable signal from the clock-gating cell and switches ON or OFF based on the logic state of the inverted latched-enable signal. The transistor provides a voltage signal to the flip-flop circuit based on the state of the flip-flop in order to control the state of the flip-flop, which reduces power consumption of the integrated circuit.

Abstract: A single semiconductor device package that reduces electromagnetic coupling between elements of a semiconductor device embodied within the package is provided. For a dual-path amplifier, such as a Doherty power amplifier, an isolation feature that separates carrier amplifier elements from peaking amplifier elements is included within the semiconductor device package. The isolation feature can take the form of a structure that is constructed of a conductive material coupled to ground and which separates the elements of the amplifier. The isolation feature can be included in a variety of semiconductor packages, including air cavity packages and overmolded packages. Through the use of the isolation feature provided by embodiments of the present invention a significant improvement in signal isolation between amplifier elements is realized, thereby improving performance of the dual-path amplifier.

Abstract: A multi-region (81, 83) lateral-diffused-metal-oxide-semiconductor (LDMOS) device (40) has a semiconductor-on-insulator (SOI) support structure (21) on or over which are formed a substantially symmetrical, laterally internal, first LDMOS region (81) and a substantially asymmetric, laterally edge-proximate, second LDMOS region (83). A deep trench isolation (DTI) wall (60) substantially laterally terminates the laterally edge-proximate second LDMOS region (83). Electric field enhancement and lower source-drain breakdown voltages (BVDSS) exhibited by the laterally edge-proximate second LDMOS region (83) associated with the DTI wall (60) are avoided by providing a doped SC buried layer region (86) in the SOI support structure (21) proximate the DTI wall (60), underlying a portion of the laterally edge-proximate second LDMOS region (83) and of opposite conductivity type than a drain region (31) of the laterally edge-proximate second LDMOS region (83).

Abstract: An integrated circuit (IC) includes a digital-to-analog converter (DAC), a voltage monitoring circuit, and a controller. The voltage monitoring circuit includes low voltage detect (LVD) and low voltage warning (LVW) circuits that generate LVD and LVW reference voltage signals. The controller generates and stores a voltage margin word (a difference between first and second DAC words that correspond to the LVD and LVW reference voltage signals, respectively). The controller compares the voltage margin word with predetermined maximum and minimum voltage margin words. If the voltage margin word does not lie between the predetermined maximum and minimum voltage margin words, the controller generates a voltage trimming signal that scales the LVW reference voltage signal. After scaling, if the voltage margin word lies between the predetermined maximum and minimum voltage margin words, the controller generates a calibration pass signal, otherwise the controller generates a calibration fail signal.

Abstract: A method and apparatus are provided for manufacturing a packaged electronic device (3) having pre-formed and placed through package circuit devices (35) which include an embedded circuit component (39) and conductor terminals (37A, 37B) extending from a molded package (38) embedding the circuit component (39). The through package circuit devices (35) are placed on end with integrated circuit die (34) and encapsulated in a molded device package (32) which leaves exposed the one or more conductor terminals (37A, 37B) positioned on first and second surfaces of the through package circuit device, where the conductor terminals (37A, 37B) and embedded circuit component (39) form a circuit path through the molded device package.

Abstract: A signal delay cell for use in resolving hold time violations in an IC has a first multiplexer having a first functional data input node and a scan data input node TI and a second multiplexer having a second functional data input node, a second input node connected to the output of the first multiplexer and a flip-flop module. The propagation of a data input signal applied to the first multiplexer is delayed, and the hold margin of the flip-flop module is increased by transit through the first multiplexer. The signal delay cell is available to replace a flip-flop having a scan data hold problem, and also for use in solving a functional data violation in the same or another cell.

Abstract: A voltage regulator for digital loads combines a closed loop regulation circuit with an open loop topology. A transistor and a bank of transistors share the same voltage source VDD and gate control current. Each of the bank of transistors is sized to match different current load requirements and one or more may be switched in or out as appropriate when the digital load transitions from one operating mode to another. The regulator has good DC load regulation and unconditional stability regardless of output capacitance.

Abstract: A signal processing device includes at least one timestamp generation component arranged to generate at least one local timestamp value, and to provide the at least one local timestamp value to at least one data link layer module for timestamping of data packets. The signal processing device further includes at least one debug module arranged to receive the at least one local timestamp value and to timestamp debug information based at least partly on the at least one local timestamp value.