Abstract: A multiport SRAM has an array of cells, a first port, and a second port. During a period of different row addresses for the ports, the first port uses first word lines and first bit lines. The second port uses second word lines and second bit lines. In response to the second port switching to the same address as the first port to make a row match, the second port and the first port use the first plurality of word lines, but the first port uses the first plurality of bit lines and the second port uses the second plurality of bit lines. If the row match is removed by the first port changing row addresses, a correlation swap is performed so that the first port performs accesses using the second word lines and bit lines and the second port performs accesses using the first word lines and bit lines.

Abstract: A communication device (1) for a wideband code division multiple access communication (W-CDMA) system is described. The communication device has an antenna interface (AIF), a front end processor (FE), a packet generator (PG), a packet writer (PW) and one or more digital signal processors (DSP1, DSP2). The front end processor (FE) is configured to receive one or more antenna signals from the antenna interface (AIF) and to calculate soft symbols representing symbols transmitted by a UE (UE0, UE1) using descrambling and despreading of the one or more antenna signals using a plurality of fingers assigned to the UE. The packet generator (PG) is configured to organize the soft symbols into packets, each packet comprising the soft symbols from the plurality of fingers assigned to a respective UE associated with one physical channel of the one of more physical channels and with the same symbol index. The packet writer (PW) is configured to write the packets into a system memory (SYSMEM).

Abstract: A low-voltage, self-biased, high-speed comparator receives and compares an analog input signal to a reference signal and generates a binary output signal whose value indicates whether the input signal is greater than or less than the reference signal. The comparator includes a current mirror, a voltage divider for establishing a midpoint voltage for generating a current reference for the current mirror, and a compensation circuit for stabilizing the comparator by preventing oscillations.

Abstract: A substrate for use in semiconductor device assembly has an electrically insulating body with a die mounting surface and an opposite grid array surface. An array of external electrical connection pads is located in the grid array surface. Substrate bond padsare located in the die mounting surface. Interconnects in the insulating body selectively interconnect the substrate bond padsto the external electrical connection pads. Tertiary bond pads are located in the die mounting surface and are electrically isolated from the external electrical connection pads.

Abstract: A customized shield plate field effect transistor (FET) includes a semiconductor layer, a gate dielectric, a gate electrode, and at least one customized shield plate. The shield plate includes a conductive layer overlying a portion of the gate electrode, one of the gate electrode sidewalls, and a portion of the substrate adjacent to the sidewall. The shield plate defines a customized shield plate edge at its lateral boundary. A distance between the customized shield plate edge and the sidewall of the gate electrode varies along a length of the sidewall. The customized shield plate edge may form triangular, curved, and other shaped shield plate elements. The configuration of the customized shield plate edge may reduce the area of the resulting capacitor and thereby achieve lower parasitic capacitance associated with the FET. The FET may be implemented as a lateral diffused MOS (LDMOS) transistor suitable for high power radio frequency applications.

Abstract: A method for pipelined data stream processing of packets includes determining a task to be performed on each packet of a data stream, the task having a plurality of task portions including a first task portion. Determining the first task portion is to process a first packet. In response to determining a first storage location stores a first barrier indicator, enabling the first task portion to process the first packet and storing a second barrier indicator at the first location. Determining the first task portion is to process a second next-in-order packet. In response to determining the first location stores the second barrier indicator, preventing the first task portion from processing the second packet. In response to a first barrier clear indicator, storing the first barrier indicator at the first location, and in response, enabling the first task portion to process the second packet.

Abstract: A semiconductor package includes a lead frame having an interior region and leads surrounding the interior region, an integrated circuit, a region of insulating material, and a power bar. The integrated circuit, which is disposed in the interior region, has bond pads and electrical couplings (e.g., bond wires) between the bond pads and the leads. The region of insulating material is disposed on at least some of the lead frame leads and the power bar is disposed on the region of insulating material. There also are electrical couplings between the power bar and at least some of the bond pads.

Abstract: A semiconductor grid array package has a first housing member with a cavity that has a cavity floor and cavity walls. A semiconductor die is affixed to the cavity floor. A second housing member is molded to the first housing member and covers an interface surface of the die. Electrically conductive runners are mounted to an external surface of the second housing member. The runners have a wire contacting area and an external connector contacting area. Bond wires are selectively bonded to the external connection pads of the semiconductor die and selectively connected to the wire contacting area of the runners. External electrical connectors are mounted to a designated external connector contacting area.

Abstract: Microelectronic packages and methods for fabricating microelectronic packages are provided. In one embodiment, the method includes producing a plurality of vertically-elongated contacts in ohmic contact with interconnect lines contained within one or more redistribution layers built over the frontside of a semiconductor die. A molded radiofrequency (RF) separation or stand-off layer is formed over the redistribution layers through which the plurality of vertically-elongated contacts extend. An antenna structure is fabricated or otherwise provided over the molded RF stand-off layer and electrically coupled to the semiconductor die through at least one of the plurality of vertically-elongated contacts.

Abstract: A method for pipelined data stream processing of packets includes determining a task to be performed on each packet of a data stream, the task having a plurality of task portions including a first task portion. Determining the first task portion is to process a first packet. In response to determining a first storage location stores a first barrier indicator, enabling the first task portion to process the first packet and storing a second barrier indicator at the first location. Determining the first task portion is to process a second next-in-order packet. In response to determining the first location stores the second barrier indicator, preventing the first task portion from processing the second packet. In response to a first barrier clear indicator, storing the first barrier indicator at the first location, and in response, enabling the first task portion to process the second packet.

Abstract: An integrated circuit (IC) is connected to an automated test equipment (ATE) with pogo pins. The IC includes an analog-to-digital converter (ADC), a voltage controlled oscillator (VCO), and a compensation circuit. The ATE provides reference voltage signals to the ADC by way of the pogo pins. A potential drop across a pogo pin introduces an error in a reference voltage signal that is reflected in a digital signal generated by the ADC. The VCO generates reference frequency signals corresponding to the reference voltage signals. The compensation circuit receives the reference frequency signals and the digital signal and generates a compensation factor signal. The compensation circuit multiplies the compensation factor signal and the digital signal to generate a compensated digital signal to compensate for the error introduced by the potential drop across the pogo pins.

Abstract: A Common Public Radio Interface, CPRI, lane controller of a processor, in a Time Division Duplex, TDD, system, said CPRI lane controller comprising: a Direct Memory Access (or more than one), DMA, controller connected to a memory through a switch fabric to perform read or/and write memory access transactions via an internal system bus of said processor, wherein said DMA controller is adapted to generate a RX/TX transaction interrupt(s) for each completed memory access RX/TX transaction counted by a corresponding transaction counter(s) which provides a TDD slot awareness interrupt(s) when a RX/TX TDD slot has terminated, wherein said DMA controller has a steering control(s) adapted to steer the memory access transactions either to said memory or to be legitimately blocked by said switch fabric in response to said TDD slot awareness interrupt(s) to save bandwidth, BW, of the internal system bus of said processor.

Abstract: An I/O cell comprising a first set of driver stages comprising, each driver stage of the first set comprising a high side switch controllable to couple an I/O node of the I/O cell to a first high voltage supply node and a low side switch controllable to couple the I/O node of the I/O cell to a first low voltage supply node. The I/O cell further comprising a second set of driver stages, each driver stage of the second set comprising a high side switch controllable to couple the I/O node of the I/O cell to a second high voltage supply node and a low side switch controllable to couple the I/O node of the I/O cell to a second low voltage supply node. The switches of the first set of driver stages are controllable independently of the switches of the second set of driver stages.

Abstract: A method and apparatus for calculating delay timing values for at least a part of an integrated circuit design. The method comprises applying a first Negative/Positive Bias Temperature Instability compensation margin to delay values for elements within the at least part of the IC design, identifying at least one lower-rate switching element within the at least part of the IC design, and applying at least one further, increased N/PBTI compensation margin to the delay value(s) for the at least one identified lower-rate switching element.

Abstract: Systems and methods for indicating internal transmitter errors in a Controller Area Network (CAN). In some embodiments, a method may include initiating, by a device coupled to a CAN, transmission of a message via the CAN; detecting an error by the device during the transmission; and continuing, by the device after having detected the error, the transmission of the message without causing or indicating a bus error condition. In other embodiments, a CAN node may include message processing circuitry configured to receive a frame from a transmitter, the frame comprising a cyclic redundancy check (CRC) field, the message processing circuitry further configured to identify an internal error of the transmitter based upon the CRC field.

Abstract: A high side driver component for generating a drive signal at an output thereof for driving a high side switching device within a high voltage driver circuit. The high side driver component is arranged to operate in at least one reduced slew rate mode in which at least one drive stages is arranged to be in a non-drive state, and the high side driver component further comprises at least one discharge protection component arranged to, when the high side driver component is operating in the at least one reduced slew rate mode, receive an indication of the high voltage driver circuit being in an idle state, and cause the second switching device within the at least one drive stage in a non-drive state to be turned on, in response to the indication of the high voltage driver circuit being in an idle state.

Abstract: In general the embodiments described herein can provide alternating-current (AC) resonating filters. These resonating filters comprise a transmission line, a first resonator, and a second resonator. The first resonator is configured to block AC signals in a first frequency range, while the second resonator is configured to block AC signals in a second frequency range, where the second frequency range is higher than the first frequency range. The transmission line has a first node coupled to an AC source, and the first resonator is coupled to the transmission line a first distance from the first node, and the second resonator is coupled to the transmission line a second distance from the first node, where the second distance is greater than the first distance. When so configured the resonating filter can effectively block signals in multiple selected frequency bandwidths.

Abstract: A magnetic field sensor includes in-plane sense elements located in a plane of the magnetic field sensor and configured to detect a magnetic field oriented perpendicular to the plane. A current carrying structure is positioned proximate the magnetic field sensor and includes at least one coil surrounding the in-plane sense elements. An electric current is applied to the coil to create a self-test magnetic field to be sensed by the sense elements. The coil may be vertically displaced from the plane in which the sense elements are located and laterally displaced from an area occupied by the sense elements to produce both Z-axis magnetic field components and lateral magnetic field components of the self-test magnetic field. The sense elements are arranged within the coil and interconnected to cancel the lateral magnetic field components, while retaining the Z-axis magnetic field components to be used for self-test of the magnetic field sensor.

Abstract: A method of measuring skew between signals from an asynchronous integrated flash memory controller (IFC) includes connecting input/output (I/O) pins of the IFC to cycle based test equipment (ATE). The ATE applies a pattern of test signals as input drive to the IFC. Relative to the test cycle, the earliest delay time at which output signals from all of the I/O pins first correspond with expected results, and the latest delay time at which the output signals still correspond with the expected results are measured. The difference between the latest and the earliest delay times is compared with a limit value and a comparison report is generated.

Abstract: The present invention relates to an amplifier circuit, comprising: first to fourth semiconductor amplifiers for controlling first to fourth currents between supply and output terminals, a first input terminal connected to provide a first input signal to a first control terminal of the first semiconductor amplifier and to a fourth control terminal of the fourth semiconductor amplifier, and a second input terminal connected to provide a second input signal to a second control terminal of the second semiconductor amplifier and to a third control terminal of the third semiconductor amplifier. The present invention also relates to a bi-stage amplifier circuit, and to a multi-stage amplifier circuit comprising a cascade of a number of amplifier circuits complying to the present invention, the multi-stage amplifier circuit having a gain control logic prepared to control a gain of at least one of the amplifier circuits.