Abstract: A pipelined analog-to-digital converter (ADC) that converts an analog input voltage signal Vin into a digital output value Dout. The ADC has a sequence of stages including a first calibrated stage having: (1) an ADC sub-module that receives Vin and provides an ADC sub-module digital output value based on Vin, (2) a DAC sub-module that receives the ADC sub-module digital output value and outputs a corresponding analog voltage signal VDAC, (3) a first difference module that generates an analog residual-voltage signal based on a difference between Vin and VDAC, and (4) an artificial-noise-insertion module that inserts an analog artificial-noise voltage signal into the residual voltage signal to generate an analog combined voltage signal. The analog combined voltage signal is used to calibrate the first calibrated stage. The artificial-noise-insertion module generates the polarity of the artificial-noise voltage signal based on the polarity of the corresponding residual voltage signal.

Abstract: An embodiment of a method of fabricating a diode having a plurality of regions of a first conductivity type and a buried region of a second conductivity type includes performing a first dopant implantation procedure to form the buried region, performing a second dopant implantation procedure to form an intermediate region of the plurality of regions, and performing a third dopant implantation procedure to form a contact region of the plurality of regions. The second and third dopant implantation procedures are configured such that the intermediate region is electrically connected with the contact region. The first, second, and third dopant implantation procedures are configured such that the buried region extends laterally across the contact region and the intermediate region to establish first and second junctions of the diode, respectively, and such that the first junction has a lower breakdown voltage than the second junction.

Abstract: An electronic device has a capacitive arrangement for controlling a frequency characteristic. The capacitive arrangement has varactor banks having a number of parallel coupled varactors and a control input for switching the respective varactors on or off. A main varactor bank has N varactors and a series varactor bank has A varactors, the main varactor bank being connected in series with the series varactor bank. A shunt varactor bank of B varactors may be coupled to a ground reference and connected between the main varactor bank and the series varactor bank. When a varactor is switched in the main varactor bank, it provides an equivalent capacitance step size (or frequency step) smaller than size of a capacitance step when switching a single varactor on or off. According to the number of varactors selected in the shunt varactor, B, this frequency step can be made programmable.

Abstract: A device includes a semiconductor substrate, a first constituent transistor including a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another, and a second constituent transistor including a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another. The first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another. Each transistor structure of the first plurality of transistor structures includes a non-uniform channel such that the first constituent transistor has a higher threshold voltage level than the second constituent transistor.

Abstract: Embodiments of a sensor device include a sensor substrate and a first cap substrate attached to the sensor substrate with a first bond material. The first bond material is arranged to define a first device cavity. A second cap substrate is attached to the sensor substrate with a second bond material. The second bond material is arranged to define a second device cavity. The second bond material has a lower bonding temperature than the first bond material. The second cap substrate is further secured to the sensor substrate by an adhesive material disposed between the sensor substrate and the second cap substrate.

Abstract: There is provided a processor for use in a computing system, said processor including at least one Central Processing Unit (CPU), a cache memory coupled to the at least one CPU, and a control unit coupled to the cache memory and arranged to obscure the existing data in the CPU cache memory, and assign control of the CPU cache memory to at least one other entity within the computing system. There is also provided a method of using a CPU cache memory for non-CPU related tasks in a computing system.

Abstract: A data processing system includes a module for generating and distributing random masks to a number of cryptographic accelerators while providing for fewer total interconnects among the components generating the random masks. The module segments the tasks associated with generating random masks across a number of modules and blocks such that routing and timing problems can be minimized and layout can be optimized. A method for generating and distributing random masks to a number of cryptographic accelerators is also provided. The random masks are utilized by cryptographic accelerators to protect secret keys, and data associated with those keys, from discovery by unauthorized users.

Abstract: A self-bootstrap driving circuit includes a first input receiving a first control signal; an output, to which a load having an electro-inductive component may be connected; a power switch having first and second current terminals and a control terminal, and being arranged to drive power from a power supply terminal to the load; a bootstrap circuitry arranged to drive the control terminal of the power switch based on the control signal; and a current path between the electro-inductive component of the load and the control terminal of the switch, said current path being arranged to provide direct transfer from said electro-inductive component to said control terminal of the switch of an overvoltage generated at the electro-inductive component to provide an overdrive voltage to said control terminal of the switch.

Abstract: In some embodiments, a power supply slew rate detector may include a filter circuit having a capacitive element operably coupled to a power supply output provided to a flash memory circuit and a resistive element operably coupled to the capacitive element and to ground, and a Schmitt trigger including an input operably coupled to a node between the capacitive element and the resistive element, the Schmitt trigger further including an output configured to indicate a slew rate of the power supply output.

Abstract: An electronic device includes a wiring board having one or more layers, an integrated circuit arranged on the wiring board, an antenna, and a signal path. The integrated circuit generates a high frequency signal and feeds it to the signal path. The signal path conveys the high frequency signal to the antenna. The antenna emits the high frequency signal into an environment of the electronic device. Alternatively or in addition, the antenna receives the high frequency signal from the environment and feeds it to the signal path. The signal path conveys the high frequency signal to the integrated circuit. The integrated circuit processes the high frequency signal. The signal path includes a wave guide that traverses one or more of the layers of the wiring board.

Abstract: A gateway includes a network interface and an apparatus for detecting predetermined tones The apparatus includes an input to receive a signal transmitted over the network interface, a frequency divider to divide the signal into two different components, each component being associated with a different frequency sub band, wherein each frequency sub band is selected to include a predetermined frequency of a predetermined tone, a frequency discriminator to determine frequencies of tones in the components, and a decision logic block to provide an indication that a first predetermined tone has been detected when a first determined frequency of a first tone in a first component corresponds to a first predetermined frequency of the first tone.

Abstract: Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a collector region of semiconductor material having a first conductivity type, a base region of semiconductor material within the collector region, the base region having a second conductivity type opposite the first conductivity type, and a doped region of semiconductor material having the second conductivity type, wherein the doped region is electrically connected to the base region and the collector region resides between the base region and the doped region. In exemplary embodiments, the dopant concentration of the doped region is greater than a dopant concentration of the collector region to deplete the collector region as the electrical potential of the base region exceeds that of the collector region.

Abstract: Operation of an insulated gate bipolar transistor (IGBT) is monitored by an apparatus that has a capacitor connected between a collector of the IGBT and an input node. A processing circuit, coupled to the input node, responds to current flowing through the capacitor by providing an indication whether a voltage level at the collector is changing and the rate of that change. The processing circuit also employs the capacitor current to provide an output voltage that indicates the voltage at the IGBT collector.

Abstract: A differential pair sensing circuit (300) includes control gates (306, 316) for separately programming a reference transistor (350) and a chemically-sensitive transistor (351) to a desired threshold voltage Vt to eliminate the mismatch between the transistors in order to increase the sensitivity and/or accuracy of the sensing circuit without increasing the circuit size.

Abstract: An electronic component package that includes a package substrate having an aluminum bond pad formed from an aluminum clad copper structure. The aluminum clad copper structure is attached to a dielectric layer. An electronic component is attached to the substrate and includes a conductive structure electrically coupled to the aluminum bond pad. The aluminum bond pad, the electronic component, and at least a portion of the substrate are encapsulated with an encapsulant.

Abstract: A clock signal generator provides a gated clock signal GCLK to trigger operation of dual-edge triggered circuits. A first detector generates, while a clock gating signal /EN is asserted, a first detector output signal that is asserted or de-asserted as a function of disjunction or conjunction respectively of the values that an input clock signal CLK and the gated clock signal GCLK had when the clock gating signal /EN transitioned. A second detector generates, while the clock gating signal /EN is de-asserted, as the value of the gated clock signal GCLK, the value CLK or its complement /CLK as a function of the first detector output signal. When the clock gating signal /EN is asserted, the second detector maintains the value that the gated clock signal GCLK had when the clock gating signal /EN transitioned from de-asserted to asserted.

Abstract: A device and a method for an amplifier having reduced intermodulation (IM) distortion output products are presented. An amplifier has an output, and at least one of a gate bias input and a drain supply input. The amplifier is configured to receive an input signal and output an amplified signal at the output of the amplified. An input is configured to receive an envelope signal. The input is connected to the at least one of the gate bias input and the drain supply input and the envelope signal is at least partially determined by an attribute of the input signal to the amplifier. A controller is configured to modify at least one of an amplitude and a phase of the envelope signal to reduce a magnitude of an intermodulation distortion product of the amplifier.

Abstract: Multiple resets in a system-on-chip (SOC) during boot where on-board regulators and low voltage detector circuits have different trimmed and untrimmed values may be avoided by the inclusion of a series of latches that latch the trimmed values during boot and retain the trim values even during a SOC reset event. The SOC is prevented from entering into a reset loop during boot or when exiting reset for any reason other than boot. A power-on-reset comparator circuit that does not depend on any trim values enables the latches and only clears the latched trim values if its own supply voltage falls below a preset level.

Abstract: A segmented driver including at least one drive pin and a sense pin, a driver circuit, a comparator, and a controller. The driver circuit activates a selected drive level between the drive pins and a reference node. The comparator compares a voltage of the sense pin with a threshold voltage and provides a threshold indication when the voltage of the sense pin reaches the threshold voltage. The controller commands the driver circuit to activate a first drive level in response to an off indication, and commands the driver circuit to switch to a second, lower drive level in response to the threshold indication. The driver circuit may be implemented using low resistive current devices. Multiple drive pins may be included, each for selectively activating a corresponding drive path to adjust drive level. The threshold voltage may be set using a current source and resistor, and may be adjusted for temperature.

Abstract: A multiple-path, configurable, radio-frequency (RF) circuit is provided, including: a first amplifier path amplify a first RF signal to generate a first amplified signal; a second amplifier path configured to amplify a second RF signal to generate a second amplified signal; a corrective input matching circuit, configured to change first input-impedance-matching properties of the first amplifier path, and to change second input-impedance-matching properties of the second amplifier path; a first isolation element configured to selectively ground an input node of the second amplifier path; a second isolation element configured to selectively ground an output node of the second amplifier path; and a third isolation element connected between the first and second amplifier paths, configured to selectively isolate the corrective input matching circuit from first and second input nodes of the first and second amplifier paths, respectively, or connect the corrective input matching circuit to the first and second input