Patents Assigned to Freescale
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Publication number: 20150303805Abstract: A method and circuit for controlling current through an inductive load such as an electromagnetic valve of a vehicle anti-lock braking system includes first and second driver stages, controlled by PWM (pulse width modulation) signals, for providing, respectively, an actuation path for valve current in an “on” phase and a recirculation path for valve current in an “off” phase. A peak value of current flowing in the actuation path at the end of an “on” phase is compared with a peak value of current flowing in the recirculation path at the start of the “off” phase in order to detect any malfunction of the circuit. An embodiment of the invention has the advantage of being able to detect any malfunction at very low and very high PWM duty cycles.Type: ApplicationFiled: October 15, 2012Publication date: October 22, 2015Applicant: Freescale Semiconductor, Inc.Inventors: CHRISTELLE FRANCHINI, ALEXIS HUOT-MARCHAND
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Publication number: 20150300905Abstract: A pressure sensor has a housing having a bottom surface and side walls that form a cavity. A pressure sensor die is attached to the bottom of the cavity and covered with a layer of low modulus gel. A lid is secured to upper ends of the side walls and covers the cavity, gel and pressure sensor die. The lid has an inner surface facing the gel and an exposed outer surface, and includes protrusions extending from the inner surface along the side walls and towards the gel such that the gel near the upper ends of the side walls is displaced towards a central region of the cavity to ensure that the gel completely covers the pressure sensor die.Type: ApplicationFiled: April 22, 2014Publication date: October 22, 2015Applicant: Freescale Semiconductor, Inc.Inventors: Navas Khan Oratti Kalandar, Charles Bergere
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Publication number: 20150301828Abstract: The invention relates to a method of designing a processor core arrangement which comprises a first processor core for operation at a first operation frequency and having an associated first leakage and a second processor core for operation at a second operation frequency lower than the first operation frequency and having an associated second leakage lower than the first leakage. The processor core arrangement is capable of switching from the first processor core to the second processor core and vice versa.Type: ApplicationFiled: November 22, 2012Publication date: October 22, 2015Applicant: Freescale Semiconductor, Inc.Inventors: Anton ROZEN, Michael PRIEL, Leonid SMOLYANSKY, Sergey SOFER
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Publication number: 20150304971Abstract: A controller device can control the time of a slave sub-system in a chain in a base station system. The controller device comprises a slave transceiver for receiving/transmitting from/to a master sub-system, and a synchronization device for synchronizing a clock of the slave transceiver to a clock of the master sub-system based on the received signal received from the master sub-system. The synchronization circuitry comprises a clock input port for receiving an external clock signal from an external clock generator. At a received signal input port the received signal can be received from the master transceiver. A tracking loop couples the received signal input and the second phase input to a control input of a controllable PLL, for providing a negative feedback which controls a phase and/or frequency of the feedback signal to counter the phase and or frequency error between the external clock signal and the received signal.Type: ApplicationFiled: April 22, 2014Publication date: October 22, 2015Applicant: FREESCALE SEMICONDUCTOR, INC.Inventors: ROI MENAHEM SHOR, ORI GOREN, AVRAHAM HORN
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Patent number: 9165904Abstract: A method of attaching a bond wire to first and second electrical contact pads includes holding the bond wire in a capillary, wherein a first end of the bond wire extends out of an opening in the capillary, attaching the first end of the bond wire to the first electrical contact pad using a ball bonding technique, moving a second end of the bond wire toward the second electrical contact pad after the attachment of the first end of the bond wire, performing an electric flame off on the second end of the bond wire without forming a free air ball, and attaching the second end of the bond wire to the second electrical contact pad after the EFO on the second end of the bond wire.Type: GrantFiled: June 17, 2014Date of Patent: October 20, 2015Assignee: FREESCALE SEMICONDUCTOR, INC.Inventors: Chin Teck Siong, Zi Song Poh, Lan Chu Tan
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Patent number: 9166595Abstract: A configurable flip-flop circuit has modifiable connections between its circuit elements that allow it to be modified for primary and secondary uses. For example, the flip-flop circuit can be modified to provide secondary functions of NOR and NAND gates during an implementation of an ECO. At other times, the flip-flop circuit can be used to deliver normal flip-flop functionality. A configurable latch circuit is provided that can be modified to provide an output signal or an inverted output signal. A scan circuit is provided that can provide the functionality of a multiplexer.Type: GrantFiled: December 27, 2013Date of Patent: October 20, 2015Assignee: FREESCALE SEMICONDUCTOR, INCInventors: Gaurav Gupta, Shiva Belwal, Ashish Goel
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Patent number: 9165869Abstract: A lead frame for a semiconductor device has a die flag and leads that surround the die flag. In order to decrease the distance or spacing between inner lead ends and the die flag, which allows for short bond wires for connecting the inner lead ends to a die mounted on the die flag, at least some of the leads are twisted along their lengths to be angled with respect to a die-flag plane. The pitch between such twisted leads can be reduced without resulting in physical contact between adjacent leads, enabling the leads to extend further towards the die flag.Type: GrantFiled: July 11, 2014Date of Patent: October 20, 2015Assignee: FREESCALE SEMICONDUCTOR, INC.Inventors: Soo Choong Chee, Meng Kong Lye, Wai Keong Wong
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Patent number: 9165652Abstract: Split-gate non-volatile memory (NVM) cells having select-gate sidewall metal silicide regions are disclosed along with related manufacturing methods. Spacer etch processing steps are used to expose sidewall portions of select gates. Metal silicide regions are then formed within these sidewall portions of the select gates. Further, metal silicide regions can also be formed in top portions of the select gates. Further, the select gates can also be formed with one or more notches. By expanding the size of the metal silicide region to include the sidewall portion of the select gate, the select gate wordline (e.g., polysilicon) resistance is reduced for split-gate NVM arrays, the electrical contact to the select gate is improved, and performance of the select-gate NVN cell is improved.Type: GrantFiled: August 20, 2012Date of Patent: October 20, 2015Assignee: Freescale Semiconductor, Inc.Inventors: Sung-Taeg Kang, Cheong M. Hong
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Patent number: 9166532Abstract: An adjustable power splitter includes: a power divider with an input and a plurality, N, of divider outputs; a plurality, N, of adjustable phase shifters and a plurality, N, of adjustable attenuators series coupled to the divider outputs and providing a plurality, N, of power outputs; an interface; and a controller. The controller is configured to receive, via the interface, data indicating phase shifts to be applied by the adjustable phase shifters and attenuation levels to be applied by the adjustable attenuators, and to control, based on the data, the phase shifts and attenuation levels applied by the adjustable phase shifters and the adjustable attenuators.Type: GrantFiled: November 21, 2013Date of Patent: October 20, 2015Assignee: Freescale Semiconductor, Inc.Inventors: Abdulrhman M. S. Ahmed, Joseph Staudinger, Paul R. Hart
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Patent number: 9165886Abstract: A method (80) entails providing (82) a structure (117), providing (100) a controller element (102, 24), and bonding (116) the controller element to an outer surface (52, 64) of the structure. The structure includes a sensor wafer (92) and a cap wafer (94) Inner surfaces (34, 36) of the wafers (92, 94) are coupled together, with sensors (30) interposed between the wafers. One wafer (94, 92) includes a substrate portion (40, 76) with bond pads (42) formed on its inner surface (34, 36). The other wafer (94, 92) conceals the substrate portion (40, 76). After bonding, methodology (80) entails forming (120) conductive elements (60) on the element (102, 24), removing (126) material sections (96, 98, 107) from the wafers to expose the bond pads, forming (130) electrical interconnects (56), applying (134) packaging material (64), and singulating (138) to produce sensor packages (20, 70).Type: GrantFiled: January 9, 2014Date of Patent: October 20, 2015Assignee: FREESCALE SEMICONDUCTOR,INCInventors: Philip H. Bowles, Paige M. Holm, Stephen R. Hooper, Raymond M. Roop
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Patent number: 9165862Abstract: A semiconductor device package such a as Ball Grid Array (BGA), includes a die attached to a substrate. The substrate has a series of plated through holes (PTH) that include a copper pad at each of their ends. The PTH are located in a mold gate region at a corner of the substrate beyond the periphery of the die. Each PTH contains a rivet. The PTH with the pads and rivets stabilize the substrate at the mold gate region, which reduces the possibility of substrate delamination upon degating following an encapsulation process.Type: GrantFiled: September 5, 2014Date of Patent: October 20, 2015Assignee: FREESCALE SEMICONDUCTOR, INC.Inventors: Boon Yew Low, Ngak Thong Teo
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Patent number: 9165918Abstract: A device includes a semiconductor substrate, a first constituent transistor including a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another, and a second constituent transistor including a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another. The first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another. Each transistor structure of the first plurality of transistor structures includes a non-uniform channel such that the first constituent transistor has a higher threshold voltage level than the second constituent transistor.Type: GrantFiled: May 7, 2014Date of Patent: October 20, 2015Assignee: Freescale Semiconductor, Inc.Inventors: Hongning Yang, Xin Lin, Pete Rodriguez, Zhihong Zhang, Jiang-Kai Zuo
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Patent number: 9166585Abstract: A low power inverter circuit includes first and second transistors that receive an input signal at their gate terminals. The first and second transistors are connected by way of their source terminals to third and fourth transistors, respectively. The third and fourth transistors are connected in parallel with fifth and sixth transistors, respectively. The third and fourth transistors are continuously switched on, and the fifth and sixth transistors are controlled in such a way to reduce short circuit current flowing through the first and second transistors when the input signal transitions from one state to another.Type: GrantFiled: August 20, 2014Date of Patent: October 20, 2015Assignee: FREESCALE SEMICONDUCTOR, INC.Inventors: Amit Roy, Zhihong Cheng, Amit Kumar Dey, Vijay Tayal, Chetan Verma
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Patent number: 9166617Abstract: A communication unit comprises a power DAC. The DAC comprises: a switched mode power amplifier (SMPA); and a digital band-pass sigma-delta modulator operably coupled to the SMPA. The sigma-delta modulator comprises an input to receive an input baseband signal; a delay; an adder module arranged to add a feedback signal with an output from the delay; and at least two feedback branches. The sigma-delta modulator is arranged to digitally oversample the input baseband signal such that a ratio of a sampling frequency employed by the sigma-delta modulator to a radio frequency (RF) output from the DAC is fixed and the sampling frequency tuned or wherein the sampling frequency is fixed and the ratio is adjusted, such that a first feedback branch in the sigma-delta modulator is formed using at least one from a group of: a zero gain, an additive inverse of a second feedback branch.Type: GrantFiled: December 18, 2014Date of Patent: October 20, 2015Assignee: Freescale Semiconductor, Inc.Inventors: Hugues Beaulaton, Jean-Christophe Nanan
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Patent number: 9165023Abstract: An integrated circuit device comprises at least one digital signal processor, DSP, module, the at least one DSP module comprising a plurality of data registers and at least one data execution unit, DEU, module arranged to execute operations on data stored within the data registers. The at least one DEU module is arranged to, in response to receiving an extreme value index instruction, compare a previous extreme value located within a first data register set of the DSP module with at least one input vector data value located within a second data register set of the DSP module, and determine an extreme value thereof. The at least one DEU module is further arranged to, if the determined extreme value comprises an input vector data value located within the second data register set, store the determined extreme value in the first data register set, determine an index value for the determined extreme value, and store the determined index value in the first data register set.Type: GrantFiled: January 31, 2011Date of Patent: October 20, 2015Assignee: Freescale Semiconductor, Inc.Inventors: Ilia Moskovich, Aviram Amir, Itzhak Barak, Eliezer Ben Zeev
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Patent number: 9165855Abstract: A packaged semiconductor device has an integrated circuit (IC) die and a heat spreader. The heat spreader has a first portion with holes formed entirely therethrough. The first portion is attached to the die using thermally-conductive adhesive that fills the holes. The holes enable the heat spreader to be attached to the die without placing excess pressure on the IC die that could cause the die to crack.Type: GrantFiled: July 2, 2014Date of Patent: October 20, 2015Assignee: FREESCALE SEMICONDUCTOR, INC.Inventors: Kai Yun Yow, Poh Leng Eu
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Patent number: 9165102Abstract: This disclosure describes a multi-height routing cell and utilization of the multi-height routing in an integrated circuit to reduce routing congestion in a standard cell design floorplan. The multi-height routing cell includes a bypass connection, or “tunnel,” that routes a signal through a non-routing layer and under an impeding power rail. The multi-height routing cell includes bypass connectors on both sides of the bypass connection that provide connection points for which to connect standard cells on opposite sides of the impeding power rail. As such, the multi-height routing cell provides a route underneath the impeding power rail and, in turn, reducing routing congestion in the standard cell design floorplan.Type: GrantFiled: April 7, 2014Date of Patent: October 20, 2015Assignee: Freescale Semiconductor, Inc.Inventors: Colin Macdonald, Anis M. Jarrar, Kristen L. Mason
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Publication number: 20150295547Abstract: An amplification stage and a wideband power amplifier are provided. The amplification stage includes a stage input terminal, a stage output terminal, an amplifier, an input compensation network, and in output compensation network. At the stage input terminal is received a signal which is provided via the input compensation network to the amplifier. The input compensation network filters the signal to allow a wideband operation of the amplification stage around an operational frequency. The amplified signal provided by the amplifier is provided via the output compensation network to the stage output terminal. The output compensation network configured to allow a wideband operation of the amplification stage around the operational frequency with a minimal phase shift and distortion of amplitude and phase frequency response. The wideband power amplifier includes a plurality of amplification stage combined with transmission lines or their lumped element equivalents in a specific circuit topology.Type: ApplicationFiled: October 31, 2012Publication date: October 15, 2015Applicant: Freescale Semiconductor, Inc.Inventor: Igor Blednov
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Publication number: 20150293807Abstract: A data processing device provided with an error detection unit includes a processor arranged to support execution of an operation including a first sequence of instructions and execution of a second sequence of instructions implementing the operation, the first and second sequences of instructions generating, when in use, a first result and a second result, respectively. Configurable circuitry is also provided and arranged to support a repository to receive the first result and the second result following generation thereof. The configurable circuitry is configured as a function comparator unit arranged to compare the first and second results for consistency and to control further execution of the first implementation and the second implementation in response to a result of the comparison.Type: ApplicationFiled: November 22, 2012Publication date: October 15, 2015Applicant: Freescale Semiconductor, Inc.Inventor: John RALSTON
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Publication number: 20150295883Abstract: A method for storing information in a memory using an IP address having numerical fields, where penultimate and ultimate memory banks for the IP address are allocated from the memory. A penultimate pointer is stored in a location of the penultimate memory bank indexed by the value of a penultimate numerical field in the IP address. The penultimate pointer points to the ultimate memory bank. The information is stored in a location of the ultimate memory bank indexed by the value of an ultimate numerical field in the IP address.Type: ApplicationFiled: April 9, 2014Publication date: October 15, 2015Applicant: Freescale Semiconductor, Inc.Inventors: Chandra Sekhar Suram, Rampullaiah Batchu, Nitin K. Parikh, Jyothi Vemulapalli