Abstract: A circuit arrangement for Logic Built-In Self-Test (LBIST) includes a clock source configured to generate a system clock, a first clock division circuitry configured to derive a first punched-out clock and a plurality of scan chains operable at the first punched-out clock. Each scan chain has an associated output circuitry responsive to a leading edge of the first punched-out clock. The circuit arrangement includes a second clock division circuitry configured to derive a second punched-out clock. The second punched-out clock has a delay of one or more system clock periods relative to the first punched-out clock. A compacting logic is configured to compact signals received from the scan chains. A sequential retiming element connects the compacting logic to an input circuitry of a MISR. The sequential retiming element is responsive to a trailing edge of the second punched-out clock. The input circuitry is responsive to a leading edge of the second punched-out clock.

Abstract: A semiconductor device is provided which comprises an ESD protection device. The structure of the semiconductor device comprises a p-doped isolated region in which a structure is manufactured which operates as a Silicon Controlled Rectifier which is coupled between an I/O pad and a reference voltage or ground voltage. The semiconductor device also comprises a pnp transistor which is coupled parallel to the Silicon Controlled Rectifier. The base of the transistor is coupled to the gate of the Silicon Controlled Rectifier. In an optional embodiment, the base and gate are also coupled to the I/O pad.

Abstract: A semiconductor device is assembled from a rectangular substrate sheet. The substrate sheet has die mounting pads accessible from a first side and package mounting pads accessible from an opposite side. Corner regions of the substrate sheet have receding edges. A semiconductor die is attached to the substrate sheet such that electrodes or bonding pads of the die are mounted to respective die mounting pads of the substrate sheet. An encapsulating material covers the semiconductor die and the first side of the substrate sheet. Corner covering sections of the encapsulating material further cover the receding edges of the corner regions.

Abstract: A comparator (231) for determining a peak number, representing a maximum or minimum of a set of numbers, includes a multi-element comparator (232) for comparing different pages of the set of numbers in a page comparison mode to output a candidate set of winning numbers, and for automatically switching to a leaf/tree search of the candidate set of winning numbers in an element comparison mode. Operating in parallel with the multi-element comparator (232), an index generation unit (233) processes flag/sign bits from the multi-element comparator in conjunction with state machine control logic (230) to keep track of the index/indices for the peak value. Upon completion of final stage, the index generation unit returns the absolute index (235) of the peak value.

Abstract: A method for reducing memory latency in a processor includes identifying an independent instruction (or cache miss instruction) and corresponding dependent instructions from a re-circulating issue window (RIW) when a cache miss is encountered. The cache miss instruction and corresponding dependent instructions are moved to a re-circulating issue buffer (RIB) and moved back to the RIW from the RIB for processing when the cache miss is resolved.

Abstract: The invention pertains to an optimization method for a compiler, comprising providing a model of inter-operand constraints of physical registers of a target-platform of a compilation; and a) providing an intermediate representation of a source code using virtual registers; b) grouping the virtual registers of the intermediate representation based on the model of inter-operand constraints into two or more groups, each group comprising at least one virtual register; c) if for at least one group at least one interference of virtual registers within the group occurs, amending the intermediate representation to resolve at least one interference and jumping to step b); otherwise d) providing a representation of a group interference graph of interferences between the groups; and e) allocating virtual registers to physical registers using a coloring scheme on the representation of the group interference graph.

Abstract: A higher breakdown voltage transistor has separated emitter, base contact, and collector contact. Underlying the emitter and the base contact are, respectively, first and second base portions of a first conductivity type. Underlying and coupled to the collector contact is a collector region of a second, opposite, conductivity type, having a central portion extending laterally toward, underneath, or beyond the base contact and separated therefrom by the second base portion. A floating collector region of the same conductivity type as the collector region underlies and is separated from the emitter by the first base portion. The collector and floating collector regions are separated by a part of the semiconductor (SC) region in which the base is formed. A further part of the SC region in which the base is formed, laterally bounds or encloses the collector region.

Abstract: Apparatus are provided for voltage-controlled oscillators (VCOs) and related systems. An exemplary VCO includes an active-circuit arrangement employing cross-coupled amplifying elements that facilitate generation of an oscillating signal, plus a resonator arrangement capacitively coupled via resonator terminals to primary terminals of the active-circuit arrangement, to influence an oscillation frequency of the oscillating signal based on a difference between control voltages applied to first and second control terminals of the resonator arrangement. When employing bipolar amplifying elements their control terminals are cross-coupled to the opposing resonator terminals. VCO output may be taken from the primary terminals or from the resonator terminals.

Abstract: Embodiments include methods for securely provisioning copies of an electronic circuit. A first entity embeds one or more secret values into copies of the circuit. A second entity: 1) embeds a trust anchor in a first copy of the circuit; 2) causes the circuit to generate a message signing key pair using the trust anchor and the embedded secret value(s); 3) signs provisioning code using a code signing private key; and 4) sends a corresponding code signing public key, the trust anchor, and the signed provisioning code to a third entity. The third entity embeds the trust anchor in a second copy of the circuit and causes the circuit to: 1) generate the message signing private key; 2) verify the signature of the signed provisioning code using the code signing public key; and 3) launch the provisioning code on the circuit.

Abstract: Embodiments include methods for securely provisioning copies of an electronic circuit. A first entity (e.g., a chip manufacturer) embeds one or more secret values into copies of the electronic circuit. A second entity (e.g., an OEM): 1) embeds a trust anchor in a first copy of the electronic circuit; 2) causes the electronic circuit to generate a message signing key pair using the trust anchor and the embedded secret value(s); 3) signs provisioning code using a code signing private key; and 4) sends a corresponding code signing public key, the trust anchor, and the signed provisioning code to a third entity (e.g., a product manufacturer). The third entity embeds the trust anchor in a second copy of the electronic circuit and causes the electronic circuit to: 1) generate the message signing private key; 2) verify the signature of the signed provisioning code using the code signing public key; and 3) launch the provisioning code on the electronic circuit.

Abstract: A low leakage current switch device (110) is provided which includes a GaN-on-Si substrate (11-13) covered by a passivation surface layer (43) in which a T-gate electrode with sidewall extensions (48) is formed and coated with a conformal passivation layer (49) so that the T-gate electrode sidewall extensions are spaced apart from the underlying passivation surface layer (43) by the conformal passivation layer (49).

Abstract: An electronic assembly includes a processor die assembly, a first die assembly, and a second die assembly. The first die assembly is positioned on a first side of the processor die assembly. The second die assembly is positioned on a second side of the processor die assembly opposite the first side of the processor die assembly. Through-die vias couple the first and second die assemblies to the processor die assembly.

Abstract: An integrated circuit device comprising a semiconductor die contained in a package. The integrated circuit device includes one or more internal connection verification modules for asserting a poor connection signal for the test apparatus in response to a voltage difference between a voltage at a corresponding internal power supply node and a reference voltage, the voltage difference being indicative of a poor connection of power supply to one of power supply terminals on the package. The test apparatus can include an indicator or a sorting element for rejecting or accepting the integrated circuit device in response to logic signals indicative of the presence or absence of a defect accompanied by non-assertion of the poor connection signal, and for processing the integrated circuit device distinctively in response to assertion of the poor connection signal.

Abstract: Methods and systems for facilitating viewing of information by machine users associated with machines, such as vehicle users in vehicles, are disclosed. In one example embodiment, a method for facilitating viewing of first information comprises (a) determining second information concerning a viewing direction of the machine user, and (b) adapting at least one operation of at least one display device so as to display the first information. Also, in an additional example embodiment, the method further comprises (c) additionally determining whether a first condition has been met, where the first condition is indicative of whether the machine user has failed to view in a sufficient manner the first information for or during a first predetermined amount of time. Additionally, the method comprises (d), upon the first condition being additionally determined to have been met, one or both of (i) repeating (a), (b), and (c), and (ii) outputting a signal configured to be sensed by the machine user.

Abstract: Zener diode structures and related fabrication methods and semiconductor devices are provided. An exemplary semiconductor device includes first and second Zener diode structures. The first Zener diode structure includes a first region, a second region that is adjacent to the first region, and a third region adjacent to the first region and the second region to provide a junction that is configured to influence a first reverse breakdown voltage of a junction between the first region and the second region. The second Zener diode structure includes a fourth region, a fifth region that is adjacent to the fourth region, and a sixth region adjacent to the fourth region and the fifth region to provide a junction configured to influence a second reverse breakdown voltage of a junction between the fourth region and the fifth region, wherein the second reverse breakdown voltage and the first reverse breakdown voltage are different.

Abstract: A process of forming an electronic device can include providing a first interconnect over a substrate having a primary surface, depositing a first insulating layer over the first interconnect, and patterning the first insulating layer to define an opening extending towards the first interconnect. The process can also include depositing a second insulating layer over the first insulating layer to seal the opening and form a cavity within the first opening, and forming a second interconnect over the first and second insulating layers. The cavity can be disposed between the first interconnect and the second interconnect. In another aspect, an electronic device can include a first interconnect, a first insulating layer defining a cavity, and a second interconnect. The cavity can be disposed between the first interconnect and the second interconnect, and a via may not be exposed within the cavity.

Abstract: A method and apparatus for a radio base station (200) generates a multicarrier communication signal having a reduced crest factor by processing a block of samples (231) with a peak search window (271) to identify and suppress signal peaks exceeding a power threshold value.

Abstract: Methods and systems are disclosed for frequency-domain amplitude normalization for symbol correlation in multi-carrier communication systems. Digital samples associated with input signals received from a communication medium are processed using a Fast Fourier Transform (FFT) to generate complex frequency components. Each complex frequency component is normalized with respect to its amplitude, and the frequency-domain, amplitude-normalized frequency components are multiplied with frequency components for reference symbol(s) to generate frequency-domain correlation values. These frequency-domain correlation values are analyzed to determine if a correlation exists between the amplitude-normalized frequency components and the predetermined reference frequency components. A correlation detection output is then generated that indicates whether or not a symbol synchronization was achieved.

Abstract: An embodiment of a method of attaching a semiconductor die to a substrate includes placing a bottom surface of the die over a top surface of the substrate with an intervening die attach material. The method further includes contacting a top surface of the semiconductor die and the top surface of the substrate with a conformal structure that includes a non-solid, pressure transmissive material, and applying a pressure to the conformal structure. The pressure is transmitted by the non-solid, pressure transmissive material to the top surface of the semiconductor die. The method further includes, while applying the pressure, exposing the assembly to a temperature that is sufficient to cause the die attach material to sinter. Before placing the die over the substrate, conductive mechanical lock features may be formed on the top surface of the substrate, and/or on the bottom surface of the semiconductor die.

Abstract: A processor unit used to determine a quality indicator, QI, of a communication channel. The processor unit receives received complex symbols at an input, executes a predetermined sequence of transformations on the received complex symbols and computes the error vector magnitude, EVM. The quality indicator, QI, of the communication channel is determined based on the determined error vector magnitude, EVM. Data representing the quality indicator, QI, is outputted at an output of the processor unit. The predetermined sequence of transformations transfers all the received complex symbols to a single predetermined region containing a single target location. The error vector magnitude, EVM, is then calculated as average distance of all the processed received complex symbols in the predetermined single region to the single target location.