Abstract: The disclosed technology generally relates to sensors comprising a two-dimensional electron gas (2DEG), and more particularly to an AlGaN/GaN 2DEG-based sensor for sensing signals associated with electrocardiograms, and methods of using the same. In one aspect, a sensor comprises a substrate and a GaN/AlGaN hetero-junction structure formed on the substrate and configured to form a two-dimensional electron gas (2DEG) channel within the GaN/AlGaN hetero-junction structure. The sensor additionally comprises Ohmic contacts connected to electrical metallizations and to the 2DEG channel, wherein the GaN/AlGaN hetero-junction structure has a recess formed between the Ohmic contacts. The sensor further comprises a dielectric layer formed on a top surface of the sensor.

Abstract: A photonics integrated system is disclosed, comprising a substrate, an integrated interferometer integrated in the substrate and being configured for receiving radiation from a radiation source, and an integrated spectral filter integrated in the substrate and being configured for receiving radiation from the interferometer. The integrated interferometer has a period and the integrated spectral filter has a bandwidth such that the period of the integrated interferometer is smaller than the bandwidth of the integrated spectral filter. The integrated spectral filter has a periodic transfer characteristic with a period and the system has a bandwidth such that the period of the periodic transfer characteristic of the integrated spectral filter is larger than the bandwidth of the system.

Abstract: This present application relates to a system for delivering megasonic energy to a liquid, involving one or more megasonic transducers, each transducer having a single operating frequency within an ultrasound bandwidth and comprising two or more groups of piezoelectric elements arranged in one or more rows, and a megasonic generator means for driving the one or more transducers at frequencies within the bandwidth, the generator means being adapted for changing the voltage applied to each group of piezoelectric elements so as to achieve substantially the same maximum acoustic pressure for each group of piezoelectric elements. The generator means and transducers being constructed and arranged so as to produce ultrasound within the liquid. Such a system may be part of an apparatus for cleaning a surface of an article such as a semiconductor wafer or a medical implant.

Abstract: In order to solve the problem of the generation of the interspace between layers, the present invention provides an actuator including: a conductive polymer layer; an ambient temperature molten salt layer; and an opposite electrode layer; wherein the ambient temperature molten salt layer is interposed between the conductive polymer layer and the opposite electrode layer, the ambient temperature molten salt layer includes an adhesive layer in the inside thereof; one surface of the adhesive layer adheres to the conductive polymer layer; and the other surface of the adhesive layer adheres to the opposite electrode layer.

Abstract: Provided are a Bragg grating and a spectroscopy device including the same. The Bragg grating is disposed at each of opposite ends of a resonator for reflecting light of a certain wavelength band and includes a core member extending from a waveguide of the resonator in a lengthwise direction of the waveguide; a plurality of first refractive members protruding from the core member and spaced apart from each other along the lengthwise direction; and a second refractive member filling spaces between the first refractive members and having a refractive index different from a refractive index of the first refractive members.

Abstract: The disclosure relates to a memory access unit. One example embodiment is a memory access unit, for providing read-access to read an item from an arbitrary location in a physical memory, independently of addressable locations of the physical memory. The item includes a first number of bits and each addressable location of the physical memory includes a second number of bits. The second number of bits is different from the first number of bits. The memory access unit includes an address input, an address interpreter, an address output, a memory output, a data formatter, and a data output.

Abstract: A method for fabricating a semiconductor structure is provided. The method includes providing a patterned substrate comprising a semiconductor region and a dielectric region. A conformal layer of a first dielectric material is deposited directly on the patterned substrate. A layer of a sacrificial material is deposited overlying the conformal layer of the first dielectric material. The sacrificial material is patterned, whereby a part of the semiconductor region remains covered by the patterned sacrificial material. A layer of a second dielectric material is deposited on the patterned substrate, thereby completely covering the patterned sacrificial material. A recess is formed in the second dielectric material by completely removing the patterned sacrificial material. The exposed conformal layer of the first dielectric material is removed selectively to the semiconductor region.

Abstract: The disclosed technology generally relates to chalcogenide thin films, and more particularly to ternary and quaternary chalcogenide thin films having a wide band-gap, and further relates to photovoltaic cells containing such thin films, e.g., as an absorber layer. In one aspect, a method of forming a ternary or quaternary thin film chalcogenide layer containing Cu and Si comprises depositing a copper layer on a substrate. The method additionally comprises depositing a silicon layer on the copper layer with a [Cu]/[Si] atomic ratio of at least 0.7, and thereafter annealing in an inert atmosphere. The method further includes performing a first selenization or a first sulfurization, thereby forming a ternary thin film chalcogenide layer on the substrate. In another aspect, a composite structure includes a substrate having a service temperature not exceeding 600° C.

Abstract: A semiconductor device having through-substrate vias is disclosed. In one aspect, the device includes a substrate having at least one front-end-of-line (FEOL) device and a back-end-of-line (BEOL) comprising a metal pad. The device additionally includes at least one first contact plug contacting the at least one FEOL device and at least one second contact plug underneath the metal pad and in electrical contact therewith. At least one second contact plug has one end contacting the metal pad and has other end contacting a material that is not part of a FEOL device.

Abstract: The disclosure relates to an apparatus and method for delivering a precursor to a reaction chamber. One example embodiment is an apparatus for delivering a precursor to a reaction chamber. The apparatus includes a recipient configured to hold a quantity of the precursor in a solid or liquid state at a given temperature and pressure so as to vaporize the precursor. The apparatus also includes a carrier gas supply line, configured to supply a carrier gas to the recipient. Further, the apparatus includes a gas mixture transport line configured to transport a mixture of the carrier gas and a vapor of the precursor out of the recipient. The glass mixture transport line extends between the recipient and an outlet section of the gas mixture transport line.

Abstract: A method is provided for forming a porous, electrochemically active lithium manganese oxide layer on a substrate, the method comprising: depositing a porous manganese oxide layer on the substrate; providing a Li containing layer on the porous manganese oxide layer; and afterwards performing an annealing step at a temperature in the range between 200° C. and 400° C., thereby inducing a solid-state reaction between the porous manganese oxide layer and the Li containing layer. The method may further comprise, before depositing the porous manganese oxide layer: depositing a seed layer on the substrate. A method of the present disclosure may be used for forming electrode layers of lithium-ion batteries.

Abstract: A system and a method for monitoring subject's eyes are disclosed. In one embodiment, spectral profiles of a frame substantially around a subject's eye are received from an image capturing device. Further, a state of the subject's eye in the frame is detected using the spectral profiles received from the image capturing device.

Abstract: The present disclosure relates to a front-end system for a radio device. In one example, a front-end system comprises a converter, the converter comprising a mixer configured for down-converting a radio frequency signal into a baseband signal by using a local oscillator signal generated by a signal generator, and characterized in that, the converter further comprises a quantizer arranged for quantizing the baseband signal into a digital signal. Further, the signal generator may be configured for generating, based on the digital signal, the local oscillator signal such that it is synchronized with the radio frequency signal.

Abstract: Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate, the method comprising providing a shallow trench isolation (STI) substrate comprising a silicon protrusion embedded in STI dielectric structures, and partially recessing the silicon protrusion in order to provide a trench in between adjacent STI structures, and to provide a V-shaped groove at an upper surface of the recessed protrusion. The method also includes growing a Si1-xGex SRB layer in the trenches, and growing a germanium based channel layer on the Si1-xGex SRB layer. In this example, the Si1-xGex SRB layer comprises a germanium content x that is within the range of 20% to 99%, and the SRB layer has a thickness less than 400 nm. The present disclosure also relates to an associated transistor device.

Abstract: A device for calculating an indication of power of a received radio signal is disclosed. In one aspect, the device includes a receiver for receiving a plurality of logarithmic values representing a sequence of measurements of power of the received radio signal, and circuitry for determining a sum of the plurality of logarithmic values. The circuitry includes an adder for pairwise summing of two logarithmic values and a plurality of memory registers. The plurality of memory registers are arranged to store intermediate sums of logarithmic values. The circuitry is arranged to control the adder to sum the plurality of logarithmic values by a recursive procedure such that the first and the second logarithmic value in individual summations of the recursive procedure represent substantially same number of power measurements.

Abstract: The present disclosure relates to devices and methods configured to perform drug screening on cells. At least one embodiment relates to a lens-free device for performing drug screening on cells. The lens-free device includes a substrate having a surface. The lens-free device also includes a light source positioned to illuminate the cells, when present, on the substrate surface with a light wave. The lens-free device further includes a sensor positioned to detect an optical signal caused by illuminating the cells. The substrate surface includes a microelectrode array for sensing an electrophysiological signal from the cells.

Abstract: An example method includes providing a layer stack in a trench defined by adjacent STI structures and recessing the STI structures adjacent to the layer stack to thereby expose an upper portion of the layer stack, the upper portion comprising at least a channel portion. The method further includes providing one or more protection layers on the upper portion of the layer stack and then further recessing the STI structures selectively to the protection layers and the layer stack, to thereby expose a central portion of the layer stack. And the method includes removing the central portion of the layer stack, resulting in a freestanding upper part and a lower part of the layer stack being physically separated from each other.

Abstract: The present invention relates to an integrated photonic device comprising a photonic substrate, and an integrated waveguide provided in or on this substrate. The waveguide is adapted for conducting radiation of a predetermined wavelength. The device further comprises a sub-wavelength grating optically connected to the waveguide, which provides a first periodic variation of the refractive index in at least one first spatial direction. The device also comprises a diffracting grating arranged over the sub-wavelength grating for coupling radiation of the predetermined wavelength in and/or out of the integrated waveguide via the sub-wavelength grating. The diffracting grating provides a second periodic variation of the refractive index in at least one second spatial direction. The first periodic variation has a first pitch that is less than half of the predetermined wavelength, while the second periodic variation has a second pitch that is at least half of the predetermined wavelength.

Abstract: A method for forming an electrical contact to a semiconductor structure is provided. The method includes providing a semiconductor structure, providing a metal on an area of said semiconductor structure, wherein said area exposes a semiconductor material and is at least a part of a contact region, converting said metal to a Si-comprising or a Ge-comprising alloy, thereby forming said electrical contact on said area, wherein said converting is done by performing a vapor-solid reaction, whereby said semiconductor structure including said metal is subjected to a silicon-comprising precursor gas or a germanium-comprising precursor gas.

Abstract: The present system and method relate to a system for performing a multiplication. The system is arranged for receiving a first data value, and comprises means for calculating at run time a set of instructions for performing a multiplication using the first data value, storage means for storing the set of instructions calculated at run time, multiplication means arranged for receiving a second data value and at least one instruction from the stored set of instructions and arranged for performing multiplication of the first and the second data values using the at least one instruction.