Abstract: Disclosed are methods and mask structures for epitaxially growing substantially defect-free semiconductor material. In some embodiments, mask structure includes a first level defining a first trench extending through the first level, wherein a bottom of the first trench is defined by a semiconductor substrate, and a second level on top of the first level, wherein the second level defines a plurality of second trenches positioned at a non-zero angle with respect to the first trench.

Abstract: The present disclosure relates to apparatuses and methods for performing in-line lens-free digital holography of objects. At least one embodiment relates to an apparatus for performing in-line lens-free digital holography of an object. The apparatus includes a point light source adapted for emitting coherent light. The apparatus also includes an image sensing device adapted and arranged for recording interference patterns resulting from interference from light waves directly originating from the point light source and object light waves. The object light waves originate from light waves from the point light source that are scattered or reflected by the object. The image sensing device comprises a plurality of pixels. The point light source comprises a broad wavelength spectrum light source and a pinhole structure. The image sensing device comprises a respective narrow band wavelength filter positioned above each pixel that filters within a broad wavelength spectrum of the point light source.

Abstract: Disclosed herein is a semiconductor structure including: (i) a monocrystalline substrate having a top surface, (ii) a non-crystalline structure overlying the monocrystalline substrate and including an opening having a width smaller than 10 microns and exposing part of the top surface of the monocrystalline substrate. The semiconductor structure also includes (iii) a buffer structure having a bottom surface abutting the part and a top surface having less than 108 threading dislocations per cm2, the buffer structure being made of a material having a first lattice constant. The semiconductor structure also includes (iv) one or more group IV monocrystalline structures abutting the buffer structure and that are made of a material having a second lattice constant, different from the first lattice constant.

Abstract: Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.

Abstract: The electronic device for sensing and/or actuating comprises a device surface to which an biological cell (40) is applied, further comprising a sensor and/or an actuator (25), and an access channel (20) with a channel port (21), said channel port being located in said surface. The access channel (20) is designed such that the biological cell (40) can enter the access channel (20) to thereby provide access to the sensor (25). Particularly the cell (40) forms a protruding portion (41) by entering the access channel (20), which portion is sensed. The access channel (20) may be provided with a specific sensor port at which the sensor (25) is present. The device may be used for sensing or actuating biological cells, such as neurons, for instance in electroporation treatments.

Abstract: A Field-Programmable Gate Array device is provided with programmable interconnect points in the form of interconnect circuits comprising one or more pass transistors, wherein at least some components of the interconnect circuits are implemented in the Back-End-Of-Line part of the Field-Programmable Gate Array device's production process. The memory element in an interconnect point is not produced as a Static Random Access Memory cell, but as a Dynamic Random Access Memory cell, requiring only a single select transistor and a storage capacitor for each memory element. The fabrication of at least the select transistor and the pass transistor involves the use of a thin film semiconductor layer, e.g., Indium Gallium Zinc Oxide, enabling production of transistors with low leakage in the Back-End-Of-Line.

Abstract: The disclosure is directed to a method for designing a lithographic mask to print a pattern of structural features, wherein an OPC-based methodology may be used for producing one or more simulated patterns as they would be printed through the optimized mask. A real mask is then produced according to the optimized design, and an actual print is made through the mask. To evaluate the printed pattern and the PW on wafer more accurately, experimental contours are extracted from the CD-SEM measurements of the printed pattern. The verification of the mask is based on a comparison between on the one hand the contour obtained from the printed pattern, and on the other hand the intended pattern and/or the simulated contour. A direct comparison can be made between simulation and experiment, without losing all the pieces of info contained in each single CD-SEM picture.

Abstract: An active interface device including a transducer or sensor array having a plurality of transducers or sensors arranged to transform a cell activity into an electrical signal, at least one detection unit for detecting the electrical signal(s), at least one recording unit for recording the electrical signal(s), comprising a plurality of recording channels arranged for being routed to the transducers or sensors, and at least one control unit. The control unit is arranged for addressing the transducers or sensors to the detection unit(s), for activating transducers or sensors, and for routing the recording channels to activated transducers or sensors.

Abstract: A method for patterning an underlying layer is described, the method comprising providing a guiding layer on the underlying layer, the guiding layer comprising guiding structures and being substantially planar; providing a block-copolymer layer on the guiding layer; inducing phase separation of the block-copolymer layer in a regular pattern of structures of a first and a second polymer component, whereby one of the components aligns to the guiding structures, by chemo-epitaxy; thereafter, removing a first of the components of the block-copolymer layers completely, leaving a regular pattern of structures of the second component; providing a planarizing layer over the regular pattern of structures of the second component and the guiding layer; removing a portion of the planarizing layer, thereby leaving a regular pattern of structures of the planarizing layer at positions in between the structures of the second component, and exposing the structures of the second component; removing the structures of the second

Abstract: A tunable impedance network and a method for tuning the tunable impedance network are disclosed. In one aspect, the tunable impedance network comprises a plurality of transformers connected in series. Each transformer has a primary winding and a secondary winding. The transformers have a voltage transformation ratio of N:1 with N>1. An impedance structure, acting as a resonant circuit together with the inductance of the secondary winding, is connected at the secondary winding of each transformer. A control circuit or processor is configured to tune the imaginary part of at least one of the impedance structures so as to change its resonance frequency to mimic a reference impedance. The control circuit is further configured to tune the real part of at least one of the impedance structures so as to change its Q-factor to mimic the reference impedance.

Abstract: The present disclosure relates to structures, systems, and methods for characterizing one or more fluorescent particles. At least one embodiment relates to an integrated waveguide structure. The integrated waveguide structure includes a substrate. The integrated waveguide structure also includes a waveguide layer arranged on top of the substrate. The waveguide layer includes one or more excitation waveguides, one or more emission waveguides, and a particle radiation coupler, which includes a resonator element. In addition, the integrated waveguide structure includes one or more sensing sites configured with respect to the one or more excitation waveguides and the one or more emission waveguides such that a fluorescent particle at one of the sensing sites is activated by an excitation radiation transmitted via the one or more excitation waveguides and radiation emitted by the fluorescent particle is coupled into at least one of the emission waveguides by the particle radiation coupler.

Abstract: Devices and systems described herein relate to a sensing device that includes an output area and an electrode area. The output area includes an output circuit comprising an integrator adapted to integrate a received current so as to generate an output voltage corresponding to the received current. The electrode area includes an electrode comprising an exposed, electrically conductive, surface area and electrode circuitry connected to the exposed surface area. The electrode circuitry comprises a voltage-to-current transducer adapted to produce a wire current corresponding to a voltage present at the exposed surface area. The sensing device also includes a connecting wire electrically connecting the electrode circuitry to the output circuit, wherein the current received by the output circuit is the wire current.

Abstract: A system for selectively adiabatically coupling electromagnetic waves from one waveguide to another waveguide is described. It comprises a first waveguide portion and a second waveguide portion having substantially different surface normal cross-sections. Portions thereof are positioned with respect to each other in a coupling region so that under first predetermined environmental conditions coupling of electromagnetic waves between the first waveguide portion and the second waveguide portion can occur and under second predetermined environmental conditions substantially no coupling of electromagnetic waves between the first waveguide portion and the second waveguide portion can occur.

Abstract: Described herein is a pinned photodiode pixel architecture having a p-type substrate that is independently biased with respect to a pixel area to provide an avalanche region between an n-type region and a p-type region formed on the substrate. Such a pinned photodiode pixel can be used in imaging sensors that are used in low light level conditions.

Abstract: A method includes sampling an input voltage signal applied to an ADC, comparing the sampled input voltage signal with an output signal of a feedback DAC, and determining in a search logic block a digital code representation for the comparison result. The method may also include performing a calibration by: performing an additional cycle, wherein a last comparison carried out for determining a least significant bit of the digital code representation is repeated with a second comparator resolution mode different from a first comparator resolution mode, so obtaining an additional comparison; determining from a difference between results of the additional comparison and the last comparison a sign of a comparator offset error between the comparator resolution modes; and tuning, in accordance with a sign of the comparator offset error, a programmable capacitor connected at an input of the comparator, thereby inducing a voltage step to counteract the comparator offset error.

Abstract: A sensor is described for sensing a substance such as for example glucose. The sensor is implantable in the body of a living creature. The sensor comprises a photonic integrated circuit, e.g. silicon-photonics, based radiation processor for spectrally processing radiation interacting with the sample. A continuous monitoring system also is described using such a sensor.

Abstract: A coupling element is disclosed, comprising four coils that are arranged such that each one of the coils extends both in a first layer and a second layer. The first layer and the second layer are stacked with respect to each other and separated by an intermediate dielectric layer. The layout of each layer is configured to provide a transformer coupling between a first one and a third one of the coils, and between a second one and a fourth one of the coils. Further, the first coil and the second coil, and the third coil and the fourth coil, respectively, are routed so as to allow a differential signaling. A semiconductor device and a differential hybrid coupler comprising the coupling element are also disclosed.

Abstract: A method for at least partially compensating for a change in threshold voltage level of a FET transistor induced by OFF-state stress degradation includes determining a signal indicative of a change in threshold voltage level of the FET with respect to a reference threshold voltage level, and applying a restoration signal to the FET. This restoration signal is adapted for shifting the threshold voltage level of the FET in a direction having opposite sign with respect to the change in threshold voltage level. Applying the restoration signal further includes taking into account the signal indicative of the change in threshold voltage level.

Abstract: The present disclosure generally relates to a method of optically coupling a photonic integrated circuit and an external optical component.

Abstract: A sensor chip for use in multiplexed analysis of at least one sample is described. The sensor chip comprises a plurality of sensing sites, each sensing site adapted for sensing an optional interaction of a sample with a component and an input waveguide for receiving radiation from a frequency comb radiation source and guiding said radiation along said plurality of sensing sites. At each sensing site, a distinct optical sensitive element is adapted for, at a distinct frequency, sensing an optional interaction of said sample with said component. An output means provides output of the radiation representative for the sensing dependent on said optional interaction of said sample with said component at said plurality of sensing sites.