Patents Assigned to IMEC
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Publication number: 20170276841Abstract: The disclosure relates to wavelength-controlled directivity of all-dielectric optical nano-antennas. One example embodiment is an optical nanoantenna for directionally scattering light in a visible or a near-infrared spectral range. The optical nanoantenna includes a substrate. The optical nanoantenna also includes an antenna structure disposed on the substrate. The antenna structure includes a dielectric material having a refractive index that is higher than a refractive index of the substrate and a refractive index of a surrounding medium. The antenna structure includes a structure having two distinct end portions. The antenna structure is asymmetric with respect to at least one mirror reflection in a plane that is orthogonal to a plane of the substrate.Type: ApplicationFiled: March 23, 2017Publication date: September 28, 2017Applicants: IMEC VZW, Katholieke Universiteit Leuven, KU LEUVEN R&DInventors: Jiaqi Li, Niels Verellen, Pol Van Dorpe, Dries Vercruysse
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Patent number: 9772447Abstract: A method of producing a heterogeneous photonic integrated circuit includes integrating at least one III-V hybrid device on a source substrate having at least a top silicon layer, and transferring by transfer-printing or by flip-chip bonding the III-V hybrid device and at least part of the top silicon layer of the source substrate to a semiconductor-on-insulator or dielectric-on-insulator host substrate.Type: GrantFiled: May 6, 2016Date of Patent: September 26, 2017Assignees: IMEC VZW, Universiteit GentInventors: Shahram Keyvaninia, Dries Van Thourhout, Gunther Roelkens
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Patent number: 9773200Abstract: A miniature integrated CMOS sensor circuit comprising a time domain ADC module, a digital logic and control module, a data transmitter module, a power circuit module, a voltage reference module, an identification code tag, and an RF coil disposed within an area of less than 0.1 mm2.Type: GrantFiled: December 18, 2015Date of Patent: September 26, 2017Assignee: IMEC VZWInventors: Srinjoy Mitra, Tom Torfs
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Patent number: 9773610Abstract: An antenna arrangement for transmitting energy is described. The antenna arrangement includes a planar array of two or more rectangular loop antennas, adapted to transmit energy at low frequencies via non-radiative resonant coupling and at high frequencies via radiative coupling. The low frequencies correspond to a wavelength with half of the wavelength being larger than the longest rectangular loop antenna dimension and the high frequencies correspond to a wavelength with half of the wavelength being approximately equal the longest rectangular loop antenna dimension. The antenna arrangement also includes a feeding network connected to the planar array, which includes a phase shifting means for providing a phase difference between signals at the high frequencies to be transmitted by different rectangular loop antennas of the planar array, whereby the amount of phase difference is related to the distance of the rectangular loop antennas to a focal point in the near-field of the planar array.Type: GrantFiled: December 11, 2013Date of Patent: September 26, 2017Assignee: Stichting IMEC NederlandInventor: Hubregt Jannis Visser
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Patent number: 9774336Abstract: An all-digital-phase-locked-loop (ADPLL) includes a digitally controlled oscillator (DCO) arranged to generate a DCO output signal, and a feedback loop comprising a set of components for controlling the DCO. The set of components comprise: a time-to-digital converter (TDC) arranged to generate a TDC output code indicative of the phase difference between the reference signal and the enable signal measured within the predetermined observation window; a subset of components arranged to generate the enable signal from the DCO output signal; and an offset calibration system connected to the TDC output, which when activated is arranged to evaluate the difference between the first and second offset delay values by monitoring the TDC output code generated over a predetermined period of time, and to adjust the difference to position the predetermined observation window with respect to the reference signal.Type: GrantFiled: December 20, 2015Date of Patent: September 26, 2017Assignee: Stichting IMEC NederlandInventor: Yao-Hong Liu
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Patent number: 9770196Abstract: A sensing system and method for sensing a component in a liquid is disclosed. The system comprises a microfluidic channel, the microfluidic channel comprising a first end and a second end, wherein the microfluidic channel is open at the first end and closed at the second end. The system also comprises at least one measurement sensor positioned adjacent the first end, the measurement sensor being arranged for detecting a measurement signal and a reference sensor positioned in the microfluidic channel adjacent the second end, the reference sensor being arranged for detecting a reference signal of the liquid. The system further is configured for combining the measurement signal and the reference signal so as to filter out background influences.Type: GrantFiled: November 27, 2013Date of Patent: September 26, 2017Assignees: UNIVERSITEIT GENT, IMEC VZWInventors: Roeland Baets, Eva Ryckeboer
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Patent number: 9772229Abstract: A spectral camera for producing a spectral output is disclosed. The spectral camera has an objective lens for producing an image, an optical duplicator, an array of filters, and a sensor array arranged to detect the filtered image copies simultaneously on different parts of the sensor array. Further, a field stop defines an outline of the image copies projected on the sensor array. The filters are integrated on the sensor array, which has a planar structure without perpendicular physical barriers for preventing cross talk between each of the adjacent optical channels. The field stop enables adjacent image copies to fit together without gaps for such barriers. The integrated filters mean there is no parasitic cavity causing crosstalk between the adjacent image copies. This means there is no longer a need for barriers between adjacent projected image copies, and thus sensor area can be better utilized.Type: GrantFiled: May 1, 2014Date of Patent: September 26, 2017Assignee: IMECInventors: Bert Geelen, Andy Lambrechts, Klaas Tack
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Publication number: 20170270388Abstract: The present disclosure relates to systems and methods for cell recognition. At least one embodiment relates to a method for recognizing cell. The method includes receiving an image of the cell. The method also includes performing edge detection on the image of the cell. Further, the method includes detecting ridges within the image of the cell. In addition, the method includes quantifying an internal complexity of the cell by gauging a contrast of the ridges with an average of a Laplacian on the detected ridges.Type: ApplicationFiled: August 17, 2015Publication date: September 21, 2017Applicants: IMEC VZW, KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&DInventor: Dries Vercruysse
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Publication number: 20170271649Abstract: The disclosure relates to a method for the fabrication of a thin-film solid-state battery with Ni(OH)2 electrode, battery cell, and battery. One example embodiment is a method for fabricating a thin-film solid-state battery cell on a substrate comprising a first current collector layer. The method includes depositing above the first current collector layer a first electrode layer. The first electrode layer is a nanoporous composite layer that includes a plurality of pores having pore walls. The first electrode layer includes a mixture of a dielectric material and an active electrode material. The method also includes depositing above the first electrode layer a porous dielectric layer. The method further includes depositing directly on the porous dielectric layer a second electrode layer. Depositing the second electrode layer includes depositing a porous Ni(OH)2 layer using an electrochemical deposition process.Type: ApplicationFiled: March 2, 2017Publication date: September 21, 2017Applicants: IMEC VZW, Katholieke Universiteit Leuven, KU LEUVEN R&D, Panasonic CorporationInventors: Philippe Vereecken, Stanislaw Zankowski, Nathalie Hendrickx, Maarten Mees, Mitsuhiro Murata, Haruhiko Habuta
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Publication number: 20170263700Abstract: The present disclosure is related to a III-Nitride semiconductor device comprising a base substrate, a buffer layer, a channel layer, a barrier layer so that a 2-dimensional charge carrier gas is formed or can be formed near the interface between the channel layer and the barrier layer, and at least one set of a first and second electrode in electrical contact with the 2-dimensional charge carrier gas, wherein the device further comprises a mobile charge layer (MCL) within the buffer layer or near the interface between the buffer layer and the channel layer, when the device is in the on-state. The device further comprises an electrically conductive path between one of the electrodes and the mobile charge layer. The present disclosure is also related to a method for producing a device according to the present disclosure.Type: ApplicationFiled: March 8, 2017Publication date: September 14, 2017Applicant: IMEC VZWInventors: Steve Stoffels, Yoganand Saripalli
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Patent number: 9759558Abstract: An example device includes: a data input module configured to receive information about a living being's physiological signals, coordinates, and motion intensity; an activity recognition module configured to calculate, from information received about the living being's motion intensity, a living being's activity; a location recognition module, configured to calculate, from information received about the living being's coordinates, a living being's location; a memory storage configured to store information about the living being's physiological signals and activity in association with the location; a normalization parameters estimator module configured to use a mathematical model to calculate a plurality of normalization parameters for a plurality of detected activities and locations; and a model selector module configured to determine, based on the plurality of normalization parameters and the living being's location, a set of location-specific normalization parameters used to further calculate normalized phyType: GrantFiled: August 28, 2014Date of Patent: September 12, 2017Assignee: Stichting IMEC NederlandInventor: Marco Altini
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Patent number: 9756270Abstract: A pixel for converting incident subatomic particles into an output voltage signal is disclosed. In one aspect, the pixel includes a photo-detector adapted to receive incident subatomic particles and generate an input voltage signal corresponding to an intensity of the received particles. The pixel also includes a passive amplifier adapted to passively amplify the input voltage signal to generate an output voltage signal. The passive amplification reduces the noise of the output voltage signal, and may have a higher quantum efficiency than typical in-pixel amplification devices and methods.Type: GrantFiled: December 10, 2015Date of Patent: September 5, 2017Assignees: IMEC vzw, Vrije Universiteit BrusselInventors: Jonathan Borremans, Linkun Wu
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Patent number: 9752904Abstract: The present disclosure relates to an arrangement for providing information about a flow rate of a fluid, comprising: a fluid inlet opening, at least one flow channel, and at least one porous zone located above the at least one flow channel, wherein the surface size and position of the at least one porous zone relative to the fluid inlet opening defines the evaporation rate of a fluid, arranged such that when a fluid is injected through the fluid inlet opening the fluid flows via hydraulic pressure through the at least one flow channel and then through the respective at least one porous zone.Type: GrantFiled: May 19, 2016Date of Patent: September 5, 2017Assignee: Stichting IMEC NederlandInventors: Marcel Arie Günther Zevenbergen, Rajesh Mandamparambil, Chuan Nie, Arnoldus Joannes Hubertus Frijns, Jacob Marinus Jan Den Toonder
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Patent number: 9750464Abstract: An electronic system for estimating a subject's blood pressure, comprising a feature extraction module configured for receiving a subject's photoplethysmogram signal, detecting a plurality of signal characteristic points on the received photoplethysmogram signal, calculating a plurality of distances in both time and amplitude between any two of the detected photoplethysmogram signal characteristic points, and providing a feature information signal comprising information about the calculated distances; and a blood pressure calculation module configured for receiving the photoplethysmogram signal, the feature information signal and anthropometric characteristics of the subject, and calculating systolic, diastolic and continuous mean blood pressure values of the subject.Type: GrantFiled: December 15, 2015Date of Patent: September 5, 2017Assignee: Stichting IMEC NederlandInventor: Pierluigi Casale
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Publication number: 20170250075Abstract: Method of producing one or more transition metal dichalcogenide (MX2) layers on a substrate, comprising the steps of: obtaining a substrate having a surface and depositing MX2 on the surface using ALD deposition, starting from a metal halide precursor and a chalcogen source (H2X), at a deposition temperature of about 300° C. Suitable metals are Mo and W, suitable chalcogenides are S, Se and Te. The substrate may be (111) oriented. Also mixtures of two or more MX2 layers of different compositions can be deposited on the substrate, by repeating at least some of the steps of the method.Type: ApplicationFiled: December 18, 2014Publication date: August 31, 2017Applicants: IMEC VZW, Katholieke Universiteit Leuven, KU LEUVEN R&DInventors: Matty Caymax, Markus Heyne, Annelies Delabie
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Patent number: 9748951Abstract: A conversion circuit is disclosed. In one aspect, the conversion circuit includes a first input terminal for receiving a digital signal. The conversion circuit includes a second input terminal for receiving a bias voltage signal. The conversion circuit includes an output terminal for outputting a current. The conversion circuit includes a first and a second switch transistor connected to the first input terminal for receiving the digital signal. The conversion circuit includes a first and a second current source transistor connected to the second input terminal for receiving the bias voltage signal. The conversion circuit further includes a first branch, wherein the first switch transistor is connected to the output terminal via the first current source transistor. The conversion circuit further includes a second branch, wherein the second current source transistor is connected to the output terminal via the second switch transistor.Type: GrantFiled: June 28, 2016Date of Patent: August 29, 2017Assignee: IMEC vzwInventors: Xiaoqiang Zhang, Mark Ingels
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Publication number: 20170242335Abstract: The present disclosure relates to a patterned structure, the structure comprising: i) a substrate, ii) a first layer on top of the substrate, comprising a filler material and a guiding material, wherein at least a top surface of the first layer comprises one or more zones of filler material and one or more zones of guiding material, and iii) a second layer on top of the first layer comprising a pattern of a first material, the pattern being either aligned or anti-aligned with the underlying one or more zones of guiding material; wherein the first material comprises a metal or a ceramic material and wherein the guiding material and the filler material either both comprise or both do not comprise the metal or ceramic material.Type: ApplicationFiled: February 15, 2017Publication date: August 24, 2017Applicants: IMEC VZW, KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&DInventors: Boon Teik Chan, Arjun Singh, Safak Sayan
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Patent number: 9741848Abstract: A Tunnel Field-Effect Transistor (TFET) is provided comprising a source-channel-drain structure of a semiconducting material. The source-channel-drain structure comprises a source region being n-type or p-type doped, a drain region oppositely doped than the source region and an intrinsic or lowly doped channel region situated between the source region and the drain region. The TFET further comprises a reference gate structure covering the channel region and a source-side gate structure aside of the reference gate structure wherein the work function and/or electrostatic potential of the source-side gate structure and the reference work function and/or electrostatic potential of the reference gate structure are selected for allowing the tunneling mechanism of the TFET device in operation to occur at the interface or interface region between the source-side gate structure and the reference gate structure in the channel region.Type: GrantFiled: October 28, 2016Date of Patent: August 22, 2017Assignee: IMEC VZWInventors: Mohammad Ali Pourghaderi, AliReza Alian
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Patent number: 9734577Abstract: A device and method for sorting objects immersed in a flowing medium are disclosed. An example device comprises a holographic imaging unit comprising one or more holographic imaging elements, a fluid handling unit comprising one or more microfluidic channels configured to conduct flowing medium along a corresponding holographic imaging element and at least one microfluidic switch arranged downstream of an imaging region in the microfluidic channel configured to direct objects in the flowing medium into a one of a plurality of outlets. The example device also comprises a processor configured to determine real-time characterizations of holographic diffraction images obtained for the moving objects. The processing unit is further configured to control the at least one microfluidic switch in response to the real-time characterizations.Type: GrantFiled: November 15, 2016Date of Patent: August 15, 2017Assignees: IMEC, Katholieke Universiteit Leuven, KU Leuven R&DInventors: Liesbet Lagae, Peter Peumans, Kris Verstreken, Dries Vercruysse, Chengxun Liu
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Patent number: 9728813Abstract: A method is provided for fabricating a thin film solid-state Li-ion battery comprising a first electrode layer, a solid electrolyte layer, and a second electrode layer. The method comprises depositing, on a substrate, an initial layer stack comprising a first layer comprising a first electrode material compound, and a second layer comprising an electrolyte material compound; and afterwards performing a lithiation step comprising incorporating Li in the first layer and in the second layer, thereby forming a stack of a first electrode layer and a solid electrolyte layer. The initial layer stack may further comprise a third layer comprising a second electrode material compound. By performing the lithiation step, Li is also incorporated in the third layer, such that a stack of a first electrode layer, a solid electrolyte layer, and a second electrode layer is formed. One or more of the first, second, or third layers may be Li-free.Type: GrantFiled: May 4, 2016Date of Patent: August 8, 2017Assignees: IMEC VZW, Katholieke Universiteit Leuven, KU Leuven R&DInventors: Nouha Labyedh, Alfonso Sepulveda Marquez, Philippe Vereecken