Abstract: An oscillator device comprises an oscillation circuit configured to generate and provide an oscillating signal. A first biasing circuit is configured to derive a bias current signal in accordance with a control signal and apply the bias current signal to the oscillation circuit to control the amplitude level of the oscillating signal. A reference generating circuit is configured to generate a reference voltage signal and comprises a second biasing circuit configured to derive a reference bias current signal in accordance with the control signal. A comparison circuit is configured to determine an error signal by comparing a voltage signal at an output of the first biasing circuit with the reference voltage signal observed at an output of the second biasing circuit. A controller is configured to determine the control signal related to the error signal and provide the control signal to the first biasing circuit and the second biasing circuit.

Abstract: A biometric sensor that measures biometric information and a biometric analysis system including the biometric sensor are provided. The biometric sensor may include: a light source configured to emit light toward a region of interest of an object under examination, the light being diffused at the region of interest; a collimator that includes a though-hole and is configured to collimate the diffused light received from the region of interest; and a spectrometer configure to analyze the diffused light transmitted by the collimator.

Abstract: A CMOS semiconductor FinFET device and a method for manufacturing a CMOS semiconductor FinFET device are disclosed. The device may comprise an nFinFET and a pFinFET having a channel region comprising Ge on a common strain-relaxed buffer layer comprising SiGe. The concentration of Ge in the channel regions is higher than the concentration of Ge in the strain-relaxed buffer layer. The device further comprises a source/drain region for the nFinFET, the source/drain region comprising SiGe; and a source/drain region for the pFinFET, the second source/drain region comprising Ge.

Abstract: The present disclosure relates generally to Hf-comprising materials for use in, for example, the insulator of a RRAM device, and to methods for making such materials. In one aspect, the disclosure provides a method for the manufacture of a layer of material over a substrate, said method including a) providing a substrate, and b) depositing a layer of material on said substrate via ALD at a temperature of from 250 to 500° C., said depositing step comprising: at least one HfX4 pulse, and at least one trimethyl-aluminum (TMA) pulse, wherein X is a halogen selected from Cl, Br, I and F and is preferably Cl.

Abstract: A method is provided for fabricating a semiconductor device that includes providing a structure with a sacrificial layer having at least one through-hole exposing a metal surface and, optionally, an oxide surface. In one example, the method may include applying a self-assembled monolayer selectively on the exposed metal surface and/or on the oxide surface. The method may also include growing a metal on the self-assembled monolayer and on the exposed metal surface if no self-assembled monolayer is present thereon, so as to fill the at least one through-hole, thereby forming at least one metal structure. The method may further include replacing the first sacrificial layer by a replacement dielectric layer having a dielectric constant of at most 3.9.

Abstract: A bio-sensing device suitable for the detection and/or characterization of target bioparticles and corresponding method is described. The bio-sensing technique is based on the impact on the heat transfer resistivity value of bioparticles binding in binding cavities of a structured substrate. By sensing temperatures and determining a heat transfer resistivity value based thereon, a characteristic of the target bioparticles can be derived.

Abstract: A method for patterning an underlying layer is described, the method comprising providing a guiding layer on the underlying layer, the guiding layer comprising guiding structures and being substantially planar; providing a block-copolymer layer on the guiding layer; inducing phase separation of the block-copolymer layer in a regular pattern of structures of a first and a second polymer component, whereby one of the components aligns to the guiding structures, by chemo-epitaxy; thereafter, removing a first of the components of the block-copolymer layers completely, leaving a regular pattern of structures of the second component; providing a planarizing layer over the regular pattern of structures of the second component and the guiding layer; removing a portion of the planarizing layer, thereby leaving a regular pattern of structures of the planarizing layer at positions in between the structures of the second component, and exposing the structures of the second component; removing the structures of the second

Abstract: Described herein is a feed forward equalizer that is configured to operate in a normal operational mode and in a test operational mode. The feed forward equalizer has an input port and an output port which are used for the normal operational mode. A test input port and a test output port are provided in the feed forward equalizer, and are used for the test operational mode. Buffers may be provided for matching the impedance of respective ones of the input, output, test input, and test output ports. The feed forward equalizer allows testing during development, and once mounted in an integrated circuit, without interfering with the normal operational mode.

Abstract: A method for manufacturing a metal-insulator-metal (MIM) stack is described. The method includes forming a temporary stack by depositing a bottom electrode comprising at least one metal layer; depositing a dielectric comprising at least one layer of a dielectric material having a first dielectric constant value; and depositing a top electrode comprising at least one metal layer. The step of depositing the bottom and/or top electrode includes depositing a non-conductive metal oxide layer directly in contact with the dielectric; and after the step of depositing the bottom and/or top electrode's non-conductive metal oxide layer and the dielectric, subjecting the temporary stack to a stimulus, which transforms the non-conductive metal oxide into a thermodynamically stable oxide having conductive properties or into a metal, and the dielectric material into a crystalline form having a second dielectric constant value higher than the first dielectric constant value, thereby creating the final MIM stack.

Abstract: A method an system is disclosed for the detection and/or allocation of at least one point mutation in target DNA and/or RNA duplexes. The method comprises obtaining a functionalized surface which is coated with probe DNA and/or RNA whereto target DNA and/or RNA duplexes are attached, contacting said functionalized surface to an electrolytic solution having a neutral pH in a flow cell and measuring a first impedance value within said electrolytic solution, and then adding a chemical to the electrolytic solution which is able to achieve denaturation of the target DNA and/or RNA. The method further comprises measuring a second impedance value within the flow cell after completion of the denaturation of the DNA and/or RNA target, and then obtaining a value representative for the impact of the chemical on the impedance of the electrolytic solution.

Abstract: A method of producing a III-V fin structure within a gap separating shallow trench isolation (STI) structures and exposing a semiconductor substrate is disclosed, the method comprising providing a semiconductor substrate, providing in the semiconductor substrate at least two identical STI structures separated by a gap exposing the semiconductor substrate, wherein said gap is bounded by said at least two identical STI structures, and, producing a III-V fin structure within said gap on the exposed semiconductor substrate, and providing a diffusion barrier at least in contact with each side wall of said at least two identical STI structures and with side walls of said III-V fin structure and wherein said semiconductor substrate is a Si substrate.

Abstract: A semiconductor device includes a Schottky diode and a High Electron Mobility Transistor (HEMT) formed on a III-nitride stack. The III-nitride stack includes at least a lower and an upper III-nitride layer forming a heterojunction therebetween, so that a 2-dimensional electron gas (2DEG) layer may be formed in the lower layer. The 2DEG layer serves as a charge carrier for the diode and the HEMT. A doped III-nitride layer may be present between a portion of the anode of the diode and the III-nitride stack, and the portion may be located between the diode's Schottky junction and the cathode. A further layer of doped III-nitride material may be present between the gate electrode of the HEMT and the III-nitride stack. The thickness of the III-nitride layers is not equal, so that the turn-on voltage of the diode and the threshold voltage of the HEMT may be tuned according to specific requirements. The disclosure also involves a method of producing such a semiconductor device.

Abstract: A method includes sampling an input voltage signal applied to an ADC, comparing the sampled input voltage signal with an output signal of a feedback DAC, and determining in a search logic block a digital code representation for the comparison result. The method may also include performing a calibration by: performing an additional cycle, wherein a last comparison carried out for determining a least significant bit of the digital code representation is repeated with a second comparator resolution mode different from a first comparator resolution mode, so obtaining an additional comparison; determining from a difference between results of the additional comparison and the last comparison a sign of a comparator offset error between the comparator resolution modes; and tuning, in accordance with a sign of the comparator offset error, a programmable capacitor connected at an input of the comparator, thereby inducing a voltage step to counteract the comparator offset error.

Abstract: The present disclosure relates to a detection circuit formed as part of an integrated circuit. In one example, the detection circuit includes a signal generator configured to generate a reference signal, and an amplification circuit comprising a p-channel transistor and an n-channel transistor, wherein the amplification circuit is affected by a variability that also affects a functional circuit formed as part of the integrated circuit. The variability causes the p-channel transistor and the n-channel transistor to have different respective drive strengths. The amplification circuit is configured to receive the reference signal and to provide an amplified signal representative of a difference in the respective drive strengths, wherein the reference signal is more insensitive to the variability than the amplified signal. The present disclosure also relates to an integrated circuit and a method for detecting and compensating a transistor mismatch.

Abstract: The present disclosure relates to a timing synchronization circuit for a digital receiver structure that includes a timing error detection module comprising a phase difference calculation unit arranged for calculating a phase difference between incoming samples of a digital data stream, and a timing error estimator arranged for determining a timing error estimate based on the calculated phase difference, and for generating, based on the determined timing error estimate, a signal indicative of timing error detection. The circuit also includes a timing error control module arranged for receiving the signal indicative of timing error detection, for evaluating the number of received signals indicative of timing error detection and for outputting, after comparison with a threshold value, a sampling adjustment command for adjusting the sampling instants applied for obtaining the digital data stream.

Abstract: Described herein is a method for forming a vertical memory device (150) having a vertical channel region (113) sandwiched between a source region (109, 112) and a drain region (114). A charge trapping layer (106) is provided either side of the vertical channel region (113) and associated source and drain regions (109, 112, 114). The source region (109, 112) comprises a junction between a first region (109) comprising a first doping type with a first doping concentration and a second region (112) comprising a second doping type which is opposite to the first doping type and with a second doping concentration. The drain region (114) comprises the first doping type with a first doping concentration. In another embodiment, the drain region has two regions of differing doping types and concentrations and the source region comprises the first doping type with the first doping concentration.

Abstract: Enhancement mode III-nitride HEMT and method for manufacturing an enhancement mode III-nitride HEMT are disclosed. In one aspect, the method includes providing a substrate having a stack of layers on the substrate, each layer including a III-nitride material, and a passivation layer having high temperature silicon nitride overlying and in contact with an upper layer of the stack of III-nitride layers, wherein the HT silicon nitride is formed by MOCVD or LPCVD or any equivalent technique at a temperature higher than about 450° C. The method also includes forming a recessed gate region by removing the passivation layer only in the gate region, thereby exposing the underlying upper layer. The method also includes forming a p-doped GaN layer at least in the recessed gate region, thereby filling at least partially the recessed gate region, and forming a gate contact and source/drain contacts.

Abstract: A semiconductor device includes a semiconductor substrate having a top surface, and at least one coated fin protruding perpendicularly from the surface and having a height h and side walls. The at least one coated fin further includes a core of one or more layers selected from the group consisting of (a) III-V compound layers and (b) a Ge layer, and a coating overlaying the core. The coating includes one or more metal oxide layers, at least one of which is aluminium. The device also includes a recess surrounding the at least one coated fin and being defined between two coated fins when more than one fin is present. The recess is filled up with a dielectric material so as to cover the coating on the side walls of the at least one fin up to a certain height h?, which is less than the height h. The present disclosure also relates to a method for producing the semiconductor device.

Abstract: Provided are a dual coupler device configured to receive lights of different polarization components, a spectrometer including the dual coupler device, and a non-invasive biometric sensor including the spectrometer. The dual coupler device may include, for example, a first coupler layer configured to receive a light of a first polarization component among incident lights. and a second coupler layer configured to receive a light of a second polarization component among the incident lights, wherein a polarization direction of the light of the first polarization component is perpendicular to a polarization direction of the light of the second polarization component. The first coupler layer and the second coupler layer may be spaced apart from each other and extended along a direction in which the light propagates in the first coupler layer and the second coupler layer.

Abstract: The present disclosure relates to a front-end system for a radio device comprising: a charge generator circuit arranged for receiving a digital baseband signal, a first converter circuit arranged for calculating at least one charge value based on the digital baseband signal, a second converter circuit arranged for converting the at least one charge value into at least one electrical charge, and a modulator circuit arranged for generating a radio frequency signal based on the at least one electrical charge and at least one local oscillator signal.