Abstract: A semiconductor device includes a semiconductor substrate having a top surface, and at least one coated fin protruding perpendicularly from the surface and having a height h and side walls. The at least one coated fin further includes a core of one or more layers selected from the group consisting of (a) III-V compound layers and (b) a Ge layer, and a coating overlaying the core. The coating includes one or more metal oxide layers, at least one of which is aluminium. The device also includes a recess surrounding the at least one coated fin and being defined between two coated fins when more than one fin is present. The recess is filled up with a dielectric material so as to cover the coating on the side walls of the at least one fin up to a certain height h?, which is less than the height h. The present disclosure also relates to a method for producing the semiconductor device.

Abstract: The present disclosure is related to detecting a start frame delimiter. A received data packet is correlated with a known sequence, which provides a first correlation result. The received data packet is correlated with a predefined sequence, which yields at least a second correlation result. The data packet comprises at least a preamble portion and a header portion, whereby the preamble portion comprises the start frame delimiter. The predefined sequence is determined according to the preamble pattern. The method further comprises comparing the first correlation result with the second correlation result and comparing the first correlation result with a given threshold. The process of correlating will be continued until two criteria are met: the first correlation result is larger than the threshold and larger than the at least second correlation result. Only then it is decided that the start of frame delimiter pattern has been detected.

Abstract: A method for manufacturing a transistor device is provided, the transistor device comprising a germanium based channel layer, the method comprising providing a gate structure on the germanium comprising channel layer provided on a substrate, the gate structure being provided between a germanium based source area and a germanium based drain area at opposite sides of the germanium comprising channel layer; providing a capping layer on the germanium based source and the germanium based drain area, the capping layer comprising Si and Ge; depositing a metal layer on the capping layer; performing a temperature step, thereby transforming at least part of the capping layer into a metal germano-silicide which is not soluble in a predetermined etchant adapted for dissolving the metal; selectively removing non-consumed metal from the substrate by means of the predetermined etchant; and providing a premetal dielectric layer.

Abstract: An autonomous transducer system is disclosed. In one aspect, the system includes an energy scavenging module, energy storage module, a load circuit having at least one functional block providing a given functionality, and a power management module arranged for providing power supplied by the energy scavenging module to the load circuit or for exchanging power with the energy storage module. The power management module may further include a tuning module configured to tune the at least one functional block of the load circuit according to a given configuration scheme.

Abstract: A filter, comprising: two source-follower stages connected in series and in between input nodes and output nodes, wherein inner nodes connect the two stages; and a frequency dependent feedback circuit connected between the input and output nodes, wherein the filter comprises additional frequency dependent feedback circuits connected between input nodes and inner nodes and between output nodes and inner nodes, the additional frequency dependent feedback circuits comprising capacitors.

Abstract: A method of organizing on-chip data memory in an embedded system-on-chip platform whereon a deterministic application needs to meet a guaranteed constraint on its functional system behavior is disclosed. In one aspect, the method includes: a) dividing the deterministic application into blocks one of which corresponds to a part of a subtask of the application, the block receiving input data and/or generating output data and including internal intermediate data for transforming the input data into the output data, b) splitting the internal intermediate data into state and non-state data, and c) putting the non-state data and a part of the state data in a protected buffering module being part of the data memory and being provided with an error detection and correction module, so that they are available for mitigating the effect of faults on the functional system behavior on-line while meeting the at least one guaranteed constraint.

Abstract: A method for providing an oxide layer on a semiconductor substrate is disclosed. In one aspect, the method includes obtaining a semiconductor substrate. The substrate may have a three-dimensional structure, which may comprise at least one hole. The method may also include forming an oxide layer on the substrate, for example, on the three-dimensional structure, by anodizing the substrate in an acidic electrolyte solution.

Abstract: The present disclosure is directed to an apparatus and method of batch assembly. The apparatus for batch assembly may include a plurality of spring units, a plurality of handling units, and a control unit. The method of batch assembly may include aligning an array of devices with a plurality of handling units, attaching the array of devices onto the handling units, expanding the handling units so as to expand the array of devices from a first area to a second area, and transferring the array of devices to a destination.

Abstract: A Si or Ge semi-conductor substrate includes an oxygen monolayer on a surface thereof. The oxygen monolayer can be fractional or complete. A Si4+ or Ge4+ oxidation state of the surface of the Si or Ge substrate, respectively, resulting from the presence of the oxygen monolayer represents less than 50%, preferably less than 40% and more preferably less than 30% of the sum of Si1+, Si2+, Si3+ and Si4+ oxidation states or the sum of Ge1+, Ge2+, Ge3+ and Ge4+ oxidation states, respectively, as measured by XPS.

Abstract: A bio-sensing device suitable for the detection and/or characterization of target bioparticles and corresponding method is described. The bio-sensing technique is based on the impact on the heat transfer resistivity value of bioparticles binding in binding cavities of a structured substrate. By sensing temperatures and determining a heat transfer resistivity value based thereon, a characteristic of the target bioparticles can be derived.

Abstract: A method and system for performing pulsed electron paramagnetic resonance is disclosed. In one aspect, the method includes generating an excitation pulse train for applying to an object having probes and detecting from the probes an echo response induced by the excitation pulse train.

Abstract: A method is disclosed for determining the inactive doping concentration of a semiconductor region using a PMOR method. In one aspect, the method includes providing two semiconductor regions having substantially the same known as-implanted concentration but known varying junction depths. The method includes determining on one of these semiconductor regions the as-implanted concentration. The semiconductor regions are then partially activated. PMOR measures are then performed on the partially activated semiconductor regions to measure (a) the signed amplitude of the reflected probe signal as function of junction depth and (b) the DC probe reflectivity as function of junction depth. The method includes extracting from these measurements the active doping concentration and then calculating the inactive doping concentration using the determined total as-implanted concentration and active doping concentration.

Abstract: In one aspect, a method is disclosed that includes providing a substrate having a topography that comprises a relief and providing an anti-reflective film conformally over the substrate using a molecular layer deposition step. The anti-reflective film may be formed of a compound selected from the group consisting of: (i) an organic compound chemically bound to an inorganic compound, where one of the organic compound and the inorganic compound is bound to the substrate and where the organic compound absorbs light at at least one wavelength selected in the range 150-500 nm, or (ii) a monodisperse organic compound absorbing light at at least one wavelength selected in the range 150-500 nm. The method further includes providing a photoresist layer on the anti-reflective film.

Abstract: Front-end systems for a transmitter included in a radio device are disclosed. An example front-end system may comprise a voltage-to-power mixer. The voltage-to-power mixer may be configured to up-convert a baseband signal to a high-frequency signal by multiplying the baseband signal with a local oscillator signal. Additionally, the voltage-to-power mixer may include a voltage feedback circuit. The example front-end system may further comprise a two-stage power amplifier. The two-stage power amplifier may be configured to amplify the high-frequency signal.

Abstract: A method (200) for determining a concentration of an analyte in a fluid or fluid sample, comprises: providing (201) a SERS substrate comprising receptor molecules (107) capable of binding competitor molecules (106); contacting (202) the SERS substrate (102) with a fluid (sample) comprising analyte (108) and such competitor molecules (106); radiating (203) the SERS substrate (102) with a light source while measuring a SERS signal; and determining (205) a concentration of the analyte (108) based on the measured signal level. A corresponding device and system are also provided.

Abstract: A semiconductor device is disclosed. In one aspect, the device has a first and second active layer on a substrate, the second active layer having a higher bandgap than the first active layer, being substantially Ga-free and including at least Al. The device has a gate insulating layer on a part of the second active layer formed by thermal oxidation of a part of the second active layer. The device has a gate electrode on at least a part of the gate insulating layer and a source electrode and drain electrode on the second active layer. The device has, when in operation and when the gate and source electrode are at the same voltage, a two-dimensional electron gas layer between the first and second active layer only outside the location of the gate electrode and not at the location of the gate electrode.

Abstract: Methods and apparatus in the field of single molecule sensing are described, e.g. for molecular analysis of analytes such as molecular analytes, e.g. nucleic acids, proteins, polypeptides, peptides, lipids and polysaccharides. Molecular spectroscopy on a molecule translocating through a solid-state nanopore is described. Optical spectroscopic signals are enhanced by plasmonic field-confinement and antenna effects and probed in transmission by plasmon-enabled transmission of light through an optical channel that overlaps with the physical channel.

Abstract: A method of fabricating through substrate vias is disclosed. In one aspect, vias are etched from the backside of the substrate down to shallow trench isolation (STI) or the pre-metal dielectric stack (PMD). Extra contacts between metal 1 contact pads and the through-wafer vias are fabricated for realizing the contact between the through wafer vias and the back-end-of-line of the semiconductor chips.

Abstract: The disclosed technology relates generally to electromechanical devices, and relates more specifically to a nanoelectromechanical switch device and a method for manufacturing the same. In one aspect, an electromechanical device includes a first electrode stack and a second electrode stack, both electrode stacks extending in a vertical direction relative to a substrate surface and being spaced apart by a gap.

Abstract: The invention relates to methods for synchronizing a device to a signal containing a train of pulses representing a programmable number of repetitions of a predetermined code. Pulse position and code phase are searched for. In a first aspect, a programmable number of samples is taken per pulse frame in function of the available number of repetitions of said predetermined code. In a second aspect, the method comprises a signal detection stage from which, after performing a confirmation stage, information can be kept for a subsequent stage. In a third aspect, only a limited number of rotated versions of the predetermined code are checked, using a presumed code phase which is kept from a preceding stage.