Abstract: Resistive memory elements and arrays of resistive memory elements are disclosed. In one embodiment, a resistive memory element includes a top electrode element lying in a plane parallel to a reference plane, and having, in perpendicular projection on the reference plane, a top electrode projection; a bottom electrode element lying in a plane parallel to the reference plane, and having, in perpendicular projection on the reference plane, a bottom electrode projection; and an active layer with changeable resistivity interposed between the top electrode element and the bottom electrode element. The top electrode projection and the bottom electrode projection overlap in an overlapping region that comprises a corner of the top electrode projection and/or a corner of the bottom electrode projection, and an area of the overlapping region constitutes less than 10% of a total projected area of the top electrode element and the bottom electrode element on the reference plane.

Abstract: A method of operating by pulse width modulation a micromirror device is disclosed. In one aspect, the method includes providing a micromirror device having a micromirror element electrostatically deflectable around a rotation axis between a first and second position. The micromirror element is controllable by applying voltage signals to a first and second electrode on one side of the rotation axis and a third and fourth electrode on the other side. The method includes associating an intermediate value of intensity to the micromirror element during a time frame, the intensity being between a first value corresponding to the first position and a second value corresponding to the second position. The method includes switching the micromirror element between the first and second position. The intermediate value corresponds to the ratio of periods in the time frame in which the micromirror element is in the first or second position.

Abstract: A configuration is disclosed. In one aspect, the configuration includes a substantially planar electrode layer, in a first plane. The configuration further includes a substantially planar two-dimensional electron gas (2DEG) layer electrically connected in series with the electrode layer. The 2DEG layer is provided in a second plane substantially parallel with the first plane and located at a predetermined distance, in a direction orthogonal to the first plane, from the first plane. The 2DEG layer and the electrode layer are patterned such that the electrode layer overlays a part of the 2DEG layer, wherein the predetermined distance between the first plane and the second plane is selected to be sufficiently small for allowing electrostatic interaction between the electrode layer and the 2DEG layer.

Abstract: A method for forming an organic material layer on a substrate in an in-line deposition system is disclosed. In one aspect, the organic material is deposited with a predetermined non-constant deposition rate profile, which includes a first predetermined deposition rate range provided to deposit at least a first monolayer of the organic material layer with a first predetermined average deposition rate and a second predetermined deposition rate range provided to deposit at least a second monolayer of the organic material layer with a second predetermined average deposition rate. The injection of organic material through the openings of the injector is controlled for realizing the predetermined deposition rate profile.

Abstract: A method of increasing dynamic range of pixels in an imaging sensor is disclosed. In one aspect, two image captures are performed, one at a first short integration time and one at a second optimum integration time. An electrical value obtained from a pixel or group of pixels at the first short integration time is used to predict the second integration time using a comparison with a set of reference values. The reference values relate to a saturation electrical value for each pixel or group of pixels to predict the second integration time. The first short integration time is determined as a fractional multiple of the saturation electrical value. The second integration times are such that there is no saturation of the pixel or group of pixels. Adjustments can be made to the reference values to allow for offset immunity and variability in light levels during the second integration time.

Abstract: A hybrid laser for generating radiation includes an optical passive material and an optical active material. The laser includes a first optical waveguide and optical laser components with reflectors in the optical passive material. The first optical waveguide is adapted for coupling out radiation from the hybrid laser. The laser also includes a second optical waveguide defined in the optical active material. The optical laser components include reflectors defining a cavity and furthermore are adapted for providing laser cavity confinement in the first optical waveguide and the second optical waveguide. The second optical waveguide thereby is positioned at least partly over the first optical waveguide so that an evanescent coupling interface is defined between the second optical waveguide and the first optical waveguide and the evanescent coupling interface is positioned within the laser cavity.

Abstract: The disclosed technology generally relates to methods of characterizing semiconductor materials, and more particularly to methods of characterizing shallow semiconductor junctions. In one aspect, the method of characterizing shallow semiconductor junctions comprises providing a substrate comprising a shallow junction formed at a first main surface, where the shallow junction is formed substantially parallel to the first main surface. The method additionally comprises providing a dielectric layer on the first main surface. The method additionally comprises iterating, at least twice, a combination of processes including providing a respective charge on a predetermined area of the dielectric layer via a charge applicator, and measuring a corresponding junction photovoltage for the predetermined area.

Abstract: An optical shear sensor that includes a first and second outer surface at opposing sides and a sensing element is disclosed. In one aspect, the sensing element has an optoelectronic source for emitting light of a predetermined wavelength and having a source front surface where light exits the optoelectronic source, and a photodetector for detecting light of the predetermined wavelength and having a detector front surface where light of the optoelectronic source is received. The optoelectronic source is positioned along the first outer surface and emits light towards the second outer surface. A flexible sensing layer transparent to the predetermined wavelength covers the front surface of the optoelectronic source and the front surface of the photodetector. Upon application of a shear stress, the sensing layer deforms elastically and the outer surfaces are displaced along directions parallel to each other and the source front surface so the intensity of light detected by the photodetector changes.

Abstract: A method is provided for bonding a first substrate carrying a semiconductor device layer on its front surface to a second substrate. The method comprises producing the semiconductor device layer on the front surface of the first substrate, depositing a first metal bonding layer or a stack of metal layers on the first substrate, on top of the semiconductor device layer, depositing a second metal bonding layer or a stack of metal layers on the front surface of the second substrate, depositing a metal stress-compensation layer on the back side of the second substrate, thereafter establishing a metal bond between the first and second substrate, by bringing the first and second metal bonding layers or stacks of layers into mutual contact under conditions of mechanical pressure and temperature suitable for obtaining the metal bond, and removing the first substrate.

Abstract: A test circuit and method for testing through-silicon-vias (TSVs) in three-dimensional integrated circuits (ICs) during each phase of manufacturing is disclosed. In one aspect, the method includes testing for faults in each individual TSV, TSV-under-test, shorts between a TSV-under-test, and TSVs in close proximity and for connections between the TSV-under-test and another tier in the ICs. A test circuit has three switchable current paths connected to a power supply via a pull-up resistor and switches: a calibration path, a short path, and a current measurement path. A power supply is connected to the measurement path, and the calibration path and the short path are connected to ground via respective pull-down resistors. For each TSV-under-test, the desired operation mode is selected by the closure of different combinations of switches. The current flowing through the pull-up resistor in each operation mode indicates whether the TSV-under-test has passed or failed the test.

Abstract: A method for tuning the effective work function of a gate structure in a semiconductor device is described. The semiconductor device is part of an integrated circuit and the gate structure has a metal layer and a high-k dielectric layer separating the metal layer from an active layer of the semiconductor device. The method includes providing an interconnect structure of the integrated circuit on top of the gate structure, the interconnect structure comprising a layer stack comprising at least a pre-metal dielectric layer comprising a metal filled connecting via connected to the gate structure through the pre-metal dielectric layer, and the interconnect structure having an upper exposed metal portion; and, thereafter, exposing at least a portion of the upper exposed metal portion to a plasma under predetermined exposure conditions, to tune the effective work function of the gate structure.

Abstract: In the present invention, a molecular analysis device comprises a substrate, and a waveguide with a planar integrating element and filter or reflector element adjacent thereto is disposed on the substrate. The waveguide comprises a coupling means configured for coupling a predetermined frequency range of laser radiation into the waveguide. At least one metallic nanostructure is disposed on or adjacent to the planar integrating element, at least one metallic nanostructure is configured such that the field intensity and the gradient of the laser radiation, that is coupled into the waveguide, are enhanced over a sufficiently large volume around the nanostructure to simultaneously cause plasmonic based optical trapping of analyte(s) in a medium, and plasmonic based excitation of the particles to produce Raman scattered radiation. A Raman scattered radiation collection means is disposed on the substrate for collecting said Raman scattered radiation produced by the particles.

Abstract: A DNA chip with micro-channel for DNA analysis of DNA included in an analyte according to a PCR method is a DNA chip with micro-channel for DNA analysis in which is silicon (first layer) and plastic (second layer) are laminated, wherein the second layer is formed on a partial area of the first layer, and the second layer includes: a reagent; a liquid transporting system; and a sensor, and the first layer includes a PCR reactor provided on an area on which the second layer is not formed.

Abstract: Provided is a DNA chip with micro-channel for DNA analysis, which has a structure in which a silicon layer (chip A) and a plastic layer (chip B) are laminated, wherein the chip A includes at least two PCR reactors connected in series in a micro-channel, and a filter between the PCR reactors, the chip B includes a reagent, a liquid delivery mechanism and a sensor in a micro-channel, and the reagent, liquid delivery mechanism and sensor can be changed according to a kind of an analyte and an object to be detected.

Abstract: New monomers, polymers, and blends of polymers with an electron acceptor are provided, e.g., for use in a photovoltaic device. The electron acceptor can be a fullerene derivative and the polymer can comprise monomer units according to the formula: wherein L? is L-C(O)O-J, L-C(O)NR?-J, L-OCO-J?, L-NR?CO-J?, L-SCO-J?, L-O-J, L-S-J, L-Se-J, L-NR?-J or L-CN; L is a linear or branched alkylene group having from 1 to 10 carbon atoms; J is a hydrogen atom or a linear or branched alkyl group having from 1 to 4 carbon atoms; J? is a group having from 1 to 10 carbon atoms, being saturated or unsaturated, linear or branched, optionally comprising a phenyl unit; and R? is a hydrogen atom or a linear or branched alkyl group having from 1 to 4 carbon atoms.

Abstract: The disclosed technology generally relates to photovoltaic devices and methods of fabricating photovoltaic devices, and more particularly relates to interdigitated back contact photovoltaic cells and methods of fabricating the same. In one aspect, a method of forming first and second interdigitated electrodes on a semiconductor substrate comprises providing a dielectric layer on the rear surface of the semiconductor substrate. The method additionally comprises providing a metal seed layer on the dielectric layer. The method additionally comprises patterning the metal seed layer by laser ablation, thereby separating it into a first seed layer and a second seed layer with a separation region interposed therebetween, wherein the first seed layer and the second seed layer are interdigitated and electrically isolated from each other. The method further comprises thickening the first seed layer and the second seed layer by plating, thereby forming the first electrode and the second electrode.

Abstract: A method and device for the sorting and focusing of suspended particles is disclosed. The device has a micro-fluidic channel, at least one inlet and a number of outlets for providing, sorting and receiving particles. A patterned array of grooves is present inside the micro-fluidic channel. The inlets and outlets are connected to the micro-fluidic channel. The particles are sorted by the array of grooves. The method consists of providing particles in a flow-focused manner to one end of the micro-fluidic channel using at least one inlet. The particles are sorted by the array of grooves present in the micro-fluidic channel. Particles are collected by a number of outlets which are connected to the other end of the micro-fluidic channel.

Abstract: The disclosed technology generally relates to a sensor and methods for making and using the same, and more particularly relates to a sensor configured to sense the presence of at least one fluidum. In one aspect, a sensor for sensing a fluidum in a space adjoining the sensor comprises a two-dimensional electron gas (2DEG) layer stack. The sensor additionally comprises a gate lying adjacent to at least part of the 2DEG layer stack and configured to electrostatically control the electron density of a two-dimensional electron gas (2DEG) in the 2DEG layer stack. The sensor further comprises a source electrode contacting the 2DEG layer stack for electrically contacting the 2DEG.

Abstract: A solid-state spectral imaging device is described. The device includes an image sensor and a plurality of optical filters directly processed on top of the image sensor. Each optical filter includes a first mirror and a second mirror defining an optical filter cavity having a fixed height. Each optical filter also includes a first electrode and a second electrode having a fixed position located opposite to each other and positioned to measure the height of the optical filter cavity. Further, a method to calibrate spectral data of light and a computer program for calibrating light is described.

Abstract: A device for monitoring the physical activity of a living being is disclosed. In one aspect, there is a data input module configured to receive information about the living being's heart beat rate value, motion intensity and anthropometric characteristics. Further, there is an activity recognition and storage module configured to detect, from information received about the living being's motion intensity, the living being's activity and to store information about the living being's heart beat rate value and the motion intensity associated with that detected activity. Further, there is a heart beat rate analysis module configured to determine, from a plurality of heart beat rate values associated with each detected activity, statistics of the distribution of heart beat rate values for each activity or a subset of activities.