Abstract: A method an system is disclosed for characterising DNA and/or RNA duplexes. The biosensing device comprises a heating element using a power and being suitable for providing thermal denaturation of target DNA and/or RNA bioparticles, a sample holder adapted for receiving a biocompatible substrate having a functionalized surface which is coated with probe DNA and/or RNA whereto target DNA and/or RNA duplexes can be attached, the sample holder further being adapted for exposing the biocompatible substrate at one side to the heating element, a first temperature sensing element for sensing a temperature at the side where the biocompatible substrate can be exposed to the heating element and a second temperature sensing element for sensing a temperature at the side opposite thereto with respect to the biocompatible substrate.

Abstract: Disclosed are complementary metal-oxide-semiconductor (CMOS) devices and methods of manufacturing such CMOS devices. In some embodiments, an example CMOS device may include a substrate, and a buffer layer formed on the substrate, where the buffer layer comprises Si1-xGex, where x is less than 0.5. The example CMOS device may further include one or more pMOS channel layer elements, where each pMOS channel layer element comprises Si1-yGey, and where y is greater than x. The example CMOS device may still further include one or more nMOS channel layer elements, where each nMOS channel layer element comprises Si1-zGez, and where z is less than x. In some embodiments, the example CMOS device may be a fin field-effect transistor (FinFET) CMOS device and may further include a first fin structure including the pMOS channel layer element(s) and a second fin structure including the nMOS channel layer element(s).

Abstract: A DND chip is disclosed. In one aspect, the chip includes a 2D DND array of DND elements logically arranged in rows and columns, and a DND driver architecture for actuating the DND elements. The DND driver has a set of first drive lines along the rows and a set of second drive lines along the columns, a set of first line drivers for each biasing one line from the set of first drive lines and a set of second line drivers for each biasing a line from the set of second drive lines. A plurality of second line drivers are spatially grouped together to serve a block of DND elements, and that plurality of second line drivers are spatially covered substantially completely by at least some DND elements of the block of DND elements. A holographic visualization system including the DND chip is provided.

Abstract: A method of manufacturing a light emitting diode is disclosed. In one aspect, the light emitting diode has a carrier, an active layer structure of III-nitride type materials, and a photonic crystal structure of III-nitride type materials. The active layer structure includes a first active layer with an n-type doped layer and a p-type doped layer and suitably a quantum well structure. The photonic crystal structure includes periodically distributed trenches or periodically distributed pillars spaced by one or more trenches. The photonic crystal structure includes an overgrowth layer within which a diameter of a trench gradually increases, and a directional photonic crystal layer in which the diameter of a trench is substantially constant. The diode may be formed in a method wherein the directional photonic crystal layer is provided on a three-dimensional pattern that exposes selected areas of the first surface of the substrate.

Abstract: The present invention is related to a method for re-enabling transport by means of a magnetic field gradient transport mechanism of magnetic beads comprising a ligand in a solution on top of a surface comprising a receptor bound with said ligand, comprising the step of changing the properties of said solution such that dissociation occurs between said ligand and said receptor, and such that a sufficient repulsive interaction is created between said surface and said bead to allow transport of said bead.

Abstract: An imaging system and method are disclosed. In one aspect, the system includes an edge-detecting module detecting edge coordinates in a first image; first and second disparity-estimating modules respectively configured to obtain a first and second estimated disparity map, a cross-checking module configured to cross check the first estimated disparity map using the second estimated disparity map to identify occlusion pixels in the first estimated disparity map, an occlusion-refining module configured to refine the occlusion pixels by identifying at least a pixel under refinement on the first estimated disparity map as occluded based on the number of occlusion pixels in a refining base region, and a hole-filling module configured to fill the refined set of occlusion pixels. The imaging system improves the quality of a disparity map and controls the complexity of stereo-matching.

Abstract: A imaging system and method is disclosed. In one aspect, the system includes a first edge-detecting module configured to detect edge coordinates in the first image, a first disparity-estimating module configured to obtain a first estimated disparity map of the first image relative to the second image, and a first edge-refining module configured to refine edge coordinates in the first estimated disparity map using the edge coordinates in the first image to obtain a first refined disparity map. The imaging system and method improve the quality of a disparity map and control the complexity of stereo-matching.

Abstract: A method for forming a nanostructure penetrating a layer and the device made thereof is disclosed. In one aspect, the device has a substrate, a layer present thereon, and a nanostructure penetrating the layer. The nanostructure defines a nanoscale passageway through which a molecule to be analyzed can pass through. The nanostructure has, in cross-sectional view, a substantially triangular shape. This shape is particularly achieved by growth of an epitaxial layer having crystal facets defining tilted sidewalls of the nanostructure. It is highly suitably for use for optical characterization of molecular structure, particularly with surface plasmon enhanced transmission spectroscopy.

Abstract: The present invention is related to a pipelined analog-to-digital converter, ADC, for converting an analog input signal into a digital signal comprising—a plurality of comparing means having tuneable thresholds for comparing an input signal with; at least two of said given thresholds being different and—a plurality of amplifying circuits,—wherein said plurality of comparing means is configured to form a hierarchical tree structure, said hierarchical tree structure having a plurality of hierarchical levels, wherein at least one of said hierarchical levels is associated with at least one amplifying circuit of said plurality of amplifying circuits, said at least one amplifying circuit generating the input of at least one comparing means at the next hierarchical level and—wherein said plurality of hierarchical levels comprises means for setting said tuneable thresholds in accordance to the output of previous hierarchical level so that non-linear distortion of the preceding hierarchical level is removed.

Abstract: A photonic integrated circuit (410) is described comprising at least one signal processing circuit (110). The signal processing circuit (110) comprises at least one input coupling element (120) for coupling incident light from a predetermined incoupling direction into the photonic integrated circuit (410), and at least one output coupling element (130) for coupling light out of the photonic integrated circuit (410) into an outcoupling direction. The relation between the incoupling direction and the outcoupling direction is different from a relation according to the law of reflection and the incoupling direction and the outcoupling direction are substantially the same. Furthermore, an optical sensor probe (400) comprising such a photonic integrated circuit (410) is disclosed.

Abstract: A method is disclosed for mixed analog/digital beamforming in a wireless communication system having transmit and receive antennas and analog front-ends connected to either the transmit antennas or the receive antennas.

Abstract: Described herein is a method for forming a vertical memory device (150) having a vertical channel region (113) sandwiched between a source region (109, 112) and a drain region (114). A charge trapping layer (106) is provided either side of the vertical channel region (113) and associated source and drain regions (109, 112, 114). The source region (109, 112) comprises a junction between a first region (109) comprising a first doping type with a first doping concentration and a second region (112) comprising a second doping type which is opposite to the first doping type and with a second doping concentration. The drain region (114) comprises the first doping type with a first doping concentration. In another embodiment, the drain region has two regions of differing doping types and concentrations and the source region comprises the first doping type with the first doping concentration.

Abstract: Disclosed are vertical semiconductor devices and methods of manufacturing vertical semiconductor devices. An example method includes providing a semiconductor substrate, and forming a stack of horizontal layers on the semiconductor substrate, where the horizontal layers are substantially parallel to a surface of the semiconductor substrate, and the horizontal layers comprise alternating conductive layers and dielectric layers. The method further includes forming a vertical channel region through the stack of horizontal layers, where the vertical channel region is substantially perpendicular to a surface of the semiconductor substrate, and the vertical channel region comprises sidewall surfaces.

Abstract: A method and device for detecting a symbol transmitted over a communication channel in a multiple input-multiple output communication system are disclosed. In one aspect, the method includes receiving a symbol transmitted over a communication channel of a multiple input-multiple output communication system. The method may also include searching a subset of possible transmitted symbols, the subset having a predetermined size dependent on properties of the communication channel. The method may also include deciding to which symbol of the subset the received symbol corresponds.

Abstract: A method is disclosed for determining the inactive doping concentration of a semiconductor region using a PMOR method. In one aspect, the method includes providing two semiconductor regions having substantially the same known as-implanted concentration but known varying junction depths. The method includes determining on one of these semiconductor regions the as-implanted concentration. The semiconductor regions are then partially activated. PMOR measures are then performed on the partially activated semiconductor regions to measure (a) the signed amplitude of the reflected probe signal as function of junction depth and (b) the DC probe reflectivity as function of junction depth. The method includes extracting from these measurements the active doping concentration and then calculating the inactive doping concentration using the determined total as-implanted concentration and active doping concentration.

Abstract: Described herein is a low-voltage unidirectional bypass element connected across a solar cell and operable to allow current to flow when the operation of the solar cell is suspended. The bypass element includes a single field effect transistor connected between first and second terminals as a switch, and a detection circuit for detecting suspension of the solar cell's operation and activating the switch to bypass the solar cell in the event of its operation suspension. Diodes are connected in parallel with the normally-open switch and receive current, when the solar cell's operation is suspended, to trigger operation of the detection circuit. The detection circuit includes a charge pump, a timer circuit, a control generation unit and a switch control circuit. The switch control circuit generates a control signal to close the switch and to allow current to bypass the solar cell.

Abstract: A Tunnel Field Effect Transistor device (TFET) made of at least following layers: a highly doped drain layer, a highly doped source layer, a channel layer, a gate dielectric layer and a gate electrode layer, the gate dielectric layer extending along the source layer, and a highly doped pocket layer extending in between and along the gate dielectric layer and the source layer, characterized in that the pocket layer extends to between and along the source layer and the channel layer.

Abstract: A digital receiver is disclosed. In one aspect, the receiver includes a receiving module for receiving packetized data. The receive may further include a first processing module for packet detection having a first programmable processor. The receiver may further include a second processing module for demodulation and packet decoding having a second programmable processor. The receiver may further include a first digital receive controller having a third processor arranged for being notified of detection of data by the first processing module and for activating the second processing module.

Abstract: In a MEMS element 500 where a MEMS structure 201 is hermetically sealed in a cavity 110 by a substrate 301 and laminated structure 120, interface sealing layers 101, 102 and 103 are provided between two layers that constitute the laminated structure 120, so as to prevent gas from breaking into the cavity 110 through the interface between two layers along the direction parallel to the surface of the substrate 301.

Abstract: A method an system is disclosed for the detection and/or allocation of at least one point mutation in target DNA and/or RNA duplexes. The method comprises obtaining a functionalized surface which is coated with probe DNA and/or RNA whereto target DNA and/or RNA duplexes are attached, contacting said functionalized surface to an electrolytic solution having a neutral pH in a flow cell and measuring a first impedance value within said electrolytic solution, and then adding a chemical to the electrolytic solution which is able to achieve denaturation of the target DNA and/or RNA. The method further comprises measuring a second impedance value within the flow cell after completion of the denaturation of the DNA and/or RNA target, and then obtaining a value representative for the impact of the chemical on the impedance of the electrolytic solution.