Abstract: A heterogeneous integrated circuit having a digital signal processor and at least one programmable logic core. An AMBA AHB couples the cores and most other functional units on the IC. The PLCs are also coupled to the DSP through a separate DMA sharing unit to the DSP, and particularly to the DSP memory. The memory sharing arrangement provides a separate high-speed data transfer mechanism between the PLCs and the DSP. The AMBA AHB allows the DSP to control the PLC operations without interference with high-speed data transfers.

Abstract: A method and apparatus are provided for calibrating first and second digital-to-analog converters (DACs). The apparatus has a normal input and a test input. A first correction circuit selectively modifies either the normal input or the test input by a first gain correction value and a first offset correction value to produce a first corrected value. A second correction circuit selectively modifies either the normal input or the test input by a second gain correction value and a second offset correction value to produce a second corrected value. A first DAC operates on the first corrected output and has a first analog output. A second DAC operates on the second corrected output and has a second analog output. A calibration control circuit has first and second inputs coupled to the first and second analog outputs, respectively, and generates the first and second gain correction values and the first and second offset correction values as a function of the first and second analog outputs.

Abstract: A method of translating a register transfer level code model includes receiving as inputs a user defined primitives map file, a truth table map file, a gate primitives map file, a register transfer level description file of a library cell, a standard delay format file, and a pin order information file for the register transfer level code model; creating data structures for a VITAL model; parsing at least one of the user defined primitives map file, the truth table map file, the gate primitives map file, the register transfer level description file, and the standard delay format file to generate an equivalent VITAL model in the data structures created for the VITAL model wherein the VITAL model is functionally equivalent to the register transfer level code model; and generating as output a VITAL model file from the data structures created for the VITAL model.

Abstract: A slew based clock multiplier which outputs a fraction of a master clock without having to use, as a reference, an edge of a higher frequency clock, and without having to use precision delay cells to delay edges of the master clock. The slew based clock multiplier can be configured to provide such an output as the result of a ratio of input current sources, a ratio of capacitors in the circuit, or as a result of a combination of the two.

Abstract: An apparatus comprising a first tool configured to generate one or more parameter signals in response to (i) one or more control signals and (ii) an input signal and a second tool configured to generate one or more edited bitstreams in response to (i) one or more bitstreams and (ii) the one or more parameter signals.

Abstract: A signal amplitude comparator which includes a first input that receives an input signal and generates an output signal that is a non-linear function of the input signal, and a second input circuit that receives a reference input signal and generates a second output signal that generally tracks process, temperature and supply variation. The signal amplitude comparator also includes an amplifier, a filter and a comparator. The amplifier amplifies a signal difference between the first and second output signals and outputs a train of pulses if a peak of the input signal exceeds the reference input signal. A second reference signal is applied to the comparator which generates an output which indicates whether the input signal exceeds a pre-determined threshold value. The signal amplitude comparator also includes a pair of input amplifiers which receive and translate the input and reference input signals to levels suitable for the input circuits.

Abstract: The present invention is directed to a system and method of retaining peripheral ordering. A method for retaining peripheral ordering in an information handling system may include reading an ordered peripheral list (OPL) from a nonvolatile memory. A list of active peripherals attached to an I/O interface controller is obtained. An order of peripherals from the ordered peripheral list (OPL) is identified and assignments are assigned to the active peripherals attached to the I/O interface controller corresponding to the ordered peripheral list (OPL).

Abstract: The present invention is directed to a simple and scalable RAID XOR assist logic with overlapped operations. An apparatus suitable for performing overlapped operations may include an exclusive OR (XOR) unit suitable for performing an exclusive OR (XOR) operation. A memory communicatively coupled to the XOR unit, wherein the memory is suitable for storing a first item of data and a second item of data thereby enabling overlapped operations of the exclusive OR (XOR) unit.

Abstract: The present invention is directed to a spanning tree method for K dimensional space. To address timing driven buffer insertion and clock routing problems clusters of points must be constructed in 3-dimensional space. The first and second dimensions are coordinates on a plane, while the third dimension is time which is arrival pin time for buffers insertion and clock latency for clock routing. In a first aspect of the present invention, a method includes partitioning an input set of points into a binary tree of partitions so that each leaf partition has maximally a defined number of points. Graph edges are made for the points by connecting each point to its closest points in every of 2K subspaces and the number of graph nodes is then reduced to a predefined value.

Abstract: The present invention provides a method of forming a semiconductor device fuse and a semiconductor device fuse structure. A first dielectric layer is formed on top of a metal layer in a semiconductor device. The dielectric layer is patterned to provide access to at least two contacts in the metal layer. A conductive metal layer is deposited and patterned to form a fuse between the fuse contacts. A second dielectric layer is deposited on the conductive metal layer.

Abstract: A method for testing integrated circuits is provided. The method includes providing an excitation voltage to a device, such as a MOSFET. A power supply voltage is also provided to the device, such as a drain to source voltage or VCC. The quiescent power supply current of the device is then measured, such as the IDDQ of the MOSFET. The power supply voltage to the device is then varied, and it is determined whether a change in the IDDQ of the device exceeds a predetermined allowable change.

Abstract: An inexpensive synchronous detection module is disclosed for a sideband signal receiver that provides for flexibility in design of the tuner. The detection module is adaptable to detection of upper or lower sideband signals. One embodiment includes an analog-to-digital converter, a Hilbert transform filter, a sideband selection switch, a complex multiplier, a carrier recovery. loop, a matched filter, and a decimator. The analog-to-digital converter oversamples an intermediate frequency (IF) signal from the tuner, and the Hilbert transform filter generates a Hilbert transform of the digital IF signal. An analytic IF signal can be generated from the digital IF signal by multiplying the Hilbert transform of the digital IF signal by j(=sqrt(−1)), and adding the resulting imaginary-valued signal to the digital IF signal. The sideband selection switch can “flip” the analytic IF signal by inverting the imaginary-valued signal.

Abstract: A method for depositing a metal conduction layer in a feature of a substrate is provided. The method includes forming the feature in the substrate, the feature having a width dimension of less than about a tenth of a micron. A barrier layer is deposited on the substrate, preferably using a self ionized plasma deposition process, where the barrier layer has a thickness of no more than about three hundred angstroms. A substantially continuous seed layer is deposited on the barrier layer, where the seed layer has a thickness of less than about three hundred angstroms. A conduction layer is deposited on the seed layer from an alkaline electroplating bath, where the electroplating bath contains an electroplating solution selected from the group consisting a pyrophosphate solution, an alkaline cyanide solution and an alkaline metal ion complexing solution. The process is adaptable to electroplating features on a substrate wherein the features have a width dimension of less than about one tenth of a micron.

Abstract: A memory manager for managing allocation of addresses in the memory is structured as a hierarchical tree having a top vertex, a bottom level and at least one intermediate level. The bottom level contains a plurality of bottom vertices each containing a plurality of representations of a Free or Taken status of respective addresses in the memory. Each intermediate contains at least one hierarchy vertex containing a plurality of labels such that each label is associated with a child vertex and defines whether or not a path that includes the respective child vertex ends in a respective bottom level vertex containing at least one Free representation. An allocation command changes the representation of the first Free address to Taken and a free command changes the representation of a specified address to Free. The labels in hierarchical vertices are changed to reflect the path conditions to the bottom vertices.

Abstract: An apparatus having a plurality of serially cascaded delay cells each configured to generate a phase of a multi-phase signal and an intermediate signal, where (i) each of the delay cells is generally configured to respond to a bias signal and one of the intermediate signals and (ii) a first of the delay cells is generally configured to respond to an input signal.

Abstract: A method of repeater insertion in a hierarchical integrated circuit includes defining an initial floorplan for a parent macro at a parent level in a hierarchical circuit design; passing outline and pin locations from the parent macro to a child macro sharing a common area with the parent macro; defining or modifying a floor plan for the child macro at a child level in the hierarchical circuit design in response to the outline and pin locations passed from the parent macro; passing physical restrictions in the child macro from the child macro to the parent macro; determining a location for a cell at the parent level of the hierarchical circuit design in an area of the parent macro shared by the child macro in response to the physical restrictions passed from the child macro; passing physical constraints in the parent macro associated with placement and routing of the cell from the parent level to the child macro; and generating an abstract representation for the child macro at the child level that includes an

Abstract: A power distribution system for distributing external power across a die is disclosed, wherein the die has horizontal and vertical centerlines. The system and method include providing a power mesh that includes a plurality of V-shaped trunks patterned as concentric diagonal trunks extending from the horizontal and vertical centerlines of the die towards the periphery of the die.

Abstract: A software program to translate a Verilog UDP (User Defined Primitive) into basic logic gates, in order to allow easier porting into other HDL languages and non-Verilog models, such as the LogicVision model. In a preferred embodiment the program is in Perl script, and reads in a Verilog source file. On finding a UDP, the script writes out a gate level description of the UDP into a Perl hash data structure, which is later used to output a LogicVision model.

Abstract: A relatively thin gate insulator of a digital switching transistor is formed from a layer of silicon oxynitride which was initially formed by implanting nitrogen atoms in a silicon substrate and oxidizing the nitrogen and silicon. It has been discovered that an outer layer of silicon dioxide is formed as a part of the silicon oxynitride layer. Removing this outer layer of silicon dioxide from the silicon oxynitride layer leaves a thin remaining layer of substantially-only silicon oxynitride as the gate insulator. Thinner gate insulators of approximately 15-21 angstroms, for example, can be formed from a grown thickness of 60 angstroms, for example. Gate insulators for digital and analog transistors may be formed simultaneously with a greater differential in thickness been possible by using conventional nitrogen implantation techniques.

Abstract: A method for determining an effective fatal defect count based on defects in a plurality of inspected integrated circuits includes acquiring defect information related to defects in the integrated circuits, and assigning defect weight values to each of the defects based on the defect information. The defect weight values are in N number of defect weight value ranges, including a lowest and a highest defect weight value range. For each integrated circuit, a heaviest defect is determined, where the heaviest defect is the defect on each integrated circuit having a highest defect weight value. For each of the N number of defect weight value ranges, a total number T(n) of the heaviest defects having a defect weight value within a defect weight value range n is determined, where n equals one to N.