Abstract: A method for making a flip chip ball grid array (BGA) package includes the step of thinning a die for matching a composite coefficient of thermal expansion to that of a second level board.

Abstract: An apparatus for storing and playing videos. The apparatus includes a storage device containing a video for playback on a user system located on a communications network. The apparatus includes a system connection to a data processing system and a network connection to the communications network. The apparatus includes a transfer means for transferring the video from the storage device to the network using the network connection, wherein the video is directly transferred from the apparatus to the network.

Abstract: The invention relates to the transmission of telemetry data from a stylus to a host computer via a serial, asynchronous data channel. The telemetry data is encoded into code-words using a specially selected error detecting or error correcting code, the code-words are transmitted from the stylus in a continuous, homogeneous data stream without the use of framing delimiters between adjacent code-words, and the code-words are then received by the host computer which separates the code-words according to the unique characteristics of the selected code. The code may be chosen based on both the error detection/correction requirements of the system and the probability that the code will create invalid intermediate code matches between consecutive back-to-back code-words. In one embodiment, the invention provides a synchronization scheme which greatly reduces the probability that invalid intermediate code matches will be recognized in the host computer as validly transmitted code-words.

Abstract: The present invention has application to final balancing of an initial balanced clock tree. In one aspect of the invention, a minimum set of clock buffer delays is generated to reduce clock skew to within a selected skew limit for each level of a balanced clock tree. In one embodiment, the difference between the optimum delay and the clock buffer delay selected from the minimum set of clock buffer delays for each clock buffer in the balanced clock tree is less than or equal to the selected skew limit.

Abstract: A method of forming a memory cell according to the present invention. A first pass gate transistor is formed of a first transistor type. The first pass gate transistor has a gate oxide with a first thickness. The source of the first pass gate transistor is electrically connected to a first bit line, and the drain of the first pass gate transistor is electrically connected to a first state node. The gate of the first pass gate transistor is electrically connected to a memory cell enable line. A second pass gate transistor is also formed of the first transistor type. The second pass gate transistor also has a gate oxide with the first thickness. The source of the second pass gate transistor is electrically connected to a second bit line, and the drain of the second pass gate transistor is electrically connected to a second state node. The gate of the second pass gate transistor is electrically connected to the memory cell enable line. A first state node transistor is also formed of the first transistor type.

Abstract: An RTL back annotator for applying back annotated data to the RTL code of an RTL simulation for verifying actual timing performance for an ASIC array after layout during RTL simulation parses through annotation data from the back annotation file for the ASIC layout and generates RTL delays for each wire and register in the ASIC layout. The RTL annotator then applies the generated RTL delays to the RTL compiled design, thereby emulating the delays that a gate level netlist would have. In this manner, an RTL simulation having timings of the real layout may be run.

Abstract: Silicon nitride gate insulators for digital transistors and silicon dioxide gate insulators for analog transistors of a hybrid integrated circuit (IC) are formed in a single integrated fabrication process. A first area of a silicon substrate of the IC is exposed while a second area is initially covered by a silicon dioxide layer. A layer of silicon nitride is formed on the exposed first area while the initial silicon dioxide layer inhibits the formation of silicon nitride on the second area. Thereafter the initial silicon dioxide layer is removed from the second area to allow a new silicon dioxide layer to be formed there from the exposed silicon substrate. The silicon dioxide layer shields against the adverse influences from silicon nitride formation and permits the initial silicon dioxide layer to be removed by etching. The silicon nitride layer shields against the adverse influences of oxidizing new silicon dioxide layer.

Abstract: A loop filter, method of generating a control signal and a phase-locked loop circuit employing the loop filter or the method. In one embodiment, the loop filter includes a capacitor having a charge rate proportional to a current therethrough and configured to provide an output signal therefrom. The loop filter also includes a current bypass circuit, coupled to the capacitor, configured to reduce the current through the capacitor and thereby reduce the charge rate of the capacitor.

Abstract: An apparatus having a first filter means for adjusting an input signal based on past data output from the apparatus. In addition, a summing means is used to sum signals from the first filter means and from a second filter means to produce a sum signal. The apparatus includes a symbol detection means for generating an output signal from the sum signal. The second filter means provides adjustments in the output signal based on the peaks and plurality of past signals generated by the symbol detection means. A control means is included for controlling the filtering properties of both the first and second filter means, wherein the control means controls the filtering properties based on the past output signals from the symbol detection means.

Abstract: A power distribution system for distributing external power across a die is disclosed, wherein the die has multiple sides, and a plurality of power bond pads located along each of the sides for receiving an external power signal. The system and method include patterning a plurality of straight power lines that form a single-layer power mesh diagonally across the die to connect the power bond pads that are located on two different sides of the die. As an alternative to the first embodiment, the diagonal power lines are patterned in a stair-step configuration for ease of manufacturing.

Abstract: A system and method for providing row redundancy for BISR of high density memory arrays without a timing penalty decreases capacitance of the memory array bitlines at least during accessing of rows of redundant memory of a memory array. In this manner, the amount of time required to access the redundant memory is limited so that no timing penalty is incurred by the memory.

Abstract: A system and method of optimizing a circuit design. The design may be coded in register transfer language (RTL) code. First the design code representing an integrated circuit design to be optimized is retrieved and sequentially searched for decision constructs. As each decision construct is encountered, it is checked to determine whether both branches drive a common output in response to a common select signal. If so, a determination is made whether the decision construct includes a common arithmetic operation in said both branches, and so, may be optimized. A construct library for a corresponding optimized construct and the selected decision construct is replaced with an optimized construct. After all of the decision constructs are checked, the optimized design code is stored, replacing the original design code. The optimized RTL design code has an identical logic function to the original retrieved RTL code.

Abstract: A data processing system comprising a block move engine, a memory, a register and a reader. The block move engine may be configured to process data. The memory may be configured to store data in the form of a linked list comprising a plurality of items of control data. The register may be associated with the block move engine and configured to control the block move engine, in response to the control data. The reader may be configured to read the control data from the memory and apply the control data to the register.

Abstract: A test fixture for a ball grid array package is disclosed that includes a test ball grid array package having a plurality of coarse pitch contacts formed on a coarse pitch surface of the test ball grid array package and a plurality of wafer bumps formed on a fine pitch surface of the test ball grid array package and an interposer coupled to the plurality of wafer bumps formed on the fine pitch surface of the test ball grid array package for coupling to a plurality of wafer bumps formed on a fine pitch surface of a subject ball grid array package.

Abstract: A mechanism is provided for self timing a memory circuit to compensate for sense amplifier imbalance. The self timing mechanism comprises two self timed sense amplifiers. A first self timed sense amplifier reads a first state and a second self timed sense amplifier reads a second state. The control logic deactivates the real sense amplifiers in response to the slower of the two self timed sense amplifiers. Thus, even if there is a layout or processing variance, which causes the sense amplifiers to have a non-zero offset voltage and favor a certain output state when the inputs are equal, the real sense amplifiers are able to read the states of the memory cell.

Abstract: Method for producing an NMOS, PMOS or CMOS semiconductor device with reduced substrate current and increased device lifetime. A source-gate-drain device is fabricated having a moderately doped source region, a lightly doped source region, a gate or channel region, a lightly doped drain region, and a moderately doped drain region, arranged consecutively in that order, with the channel region adjacent to the gate having opposite electrical conductivity type to the electrical conductivity type of the source and drain regions. The source region and drain region are formed by ion implantation with ion kinetic energies of 40 keV or more, to increase the width and depth of charge carrier flow in these regions and to thereby reduce the substrate current associated with the device to less than one &mgr;Amp/&mgr;m.

Abstract: A clock tree deskew circuit dynamically minimizes skew in clock signals that synchronize operation of synchronized circuit components of an integrated circuit. The clock tree deskew circuit reduces the clock tree skew in repeated intervals over a period of time. The clock tree deskew circuit is then turned off to prevent unnecessary further adjustments to the clock signals, but can be turned back on when conditions change that alter the clock tree skew. The clock signals are paired together in a continuous loop such that each clock signal is the first clock signal of the pair when paired with the next clock signal and is the second clock signal when paired with the one before it. The clock tree deskew circuit detects the absolute skew between each pair of the clock signals. The clock tree deskew circuit adjusts the first clock signal of each pair toward the second clock signal of the pair to reduce the skew between the two clock signals.

Abstract: An apparatus comprising a first circuit, a second circuit, and a third circuit. The first circuit may be configured to generate a control signal in response to an output signal. The control signal may comprise a peak value of the output signal. The second circuit may be configured to generate a phase adjustment signal in response to the control signal. The third circuit may be configured to generate a second clock signal in response to the phase adjustment signal and a first clock signal. The second clock signal may clock the output signal.

Abstract: A method for reducing the coupling capacitance between adjacent electrically conductive interconnect lines of an integrated circuit. An electrically conductive layer is deposited and etched to produce electrically conductive interconnect lines having negatively sloped sidewalls. An insulating layer is deposited on the electrically conductive interconnect lines using a directional deposition to create a void between and directly adjacent electrically conductive interconnect lines. The void has a substantially lower dielectric constant than the material of the insulating layer, which reduces the coupling capacitance between adjacent electrically conductive interconnect lines.

Abstract: An apparatus comprising a plurality of register logic circuits, a core circuit, a memory circuit, and a plurality of logic circuits. The register logic circuits may each be configured to generate a first logic signal in response to (i) an input data signal, (ii) a second logic signal, (iii) a first clock signal and (iv) a second clock signal. The core circuit may be configured to generate a plurality of data signals and a first control signal in response to the first logic signals and a second control signal. The memory may be configured to present the second control signal to the core circuit. The logic circuits may each be configured to present the second logic signal in response to the first logic signal and the data signals. An embedded FPGA core may be enabled to provide an interconnect to a chip. Additionally, software may enable a wide variety of features including bug fixes and product variations, all without changing the silicon.