Abstract: Apparatuses, systems, and methods for module level error correction. Multiple memory devices a packaged together in a memory module. The module includes a module error correction code (ECC) circuit which pools information multiple memory devices on the module. In an example read operation, multiple memory devices each provide a codeword which includes data bits and parity bits. The codewords may include data bits provided along a data bus and parity bits provided along a parity bus. The ECC circuit pools the codewords and detects errors in the pooled codewords.

Abstract: Disclosed in some examples are methods, systems, and devices for authenticating a firmware object on a device and in some examples to safeguard the attestation process from the execution of malicious firmware. In some examples, a firmware update process may, in addition to updating the firmware on the device, write a hash of the authentic firmware code in a secure storage device (e.g., a register). This may be done in some examples in a protected environment (e.g., a trusted execution environment or a protected firmware update process). Upon first boot after the update, a firmware update checker compares the firmware object that is booted with the value of the secure storage device. If the values match, the alias certificate may be regenerated, and the boot continues. If the values do not match, then the alias certificate may not be regenerated, and the system may have an authenticity failure because the key and the certificate do not match.

Abstract: A method for controlling aggregation for HRAM comprises a processing device, using a buffer manager, to receive instructions that include smaller-sized block write instructions from a host system. The processing device, using an aggregation engine, aggregates the smaller-sized block write instructions from the buffer manager into a plurality of larger-sized write instructions. The processing device issues a burst write instruction comprising the larger-sized write instructions to the memory component via the interface. The memory component can be HRAM and the interface can be a modified DDR-L5 interface for HRAM. Other embodiments are described herein.

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple with conductor material of the conductor tier. A through-array-via (TAV) region comprises TAVs that individually extend through the insulative tiers and the conductive tiers into the conductor tier. Individual of the TAVs comprise an upper portion directly above and joined with a lower portion. The individual TAVs comprise at least one external jog surface in a vertical cross-section where the upper and lower portions join. The lower portion is wider in the vertical cross-section than the upper portion where the upper and lower portions join. Other embodiments, including method, are disclosed.

Abstract: Apparatuses and methods for manufacturing semiconductor memory devices are described. An example method includes: forming a plurality of capacitor contacts on a substrate; forming a dielectric layer on the plurality of capacitor contacts; removing portions of the dielectric layer to form a plurality of openings in the dielectric layer; exposing the plurality of capacitor contacts at bottoms of the plurality of the corresponding openings; and depositing conductive material to form a plurality of interconnects in the plurality of corresponding openings.

Abstract: Integrated circuitry comprises a horizontally-elongated insulative wall directly above a conductive node. The wall comprises insulative material. A conductive via extends through the wall to the conductive node. A conductive line is directly above the wall and directly above the conductive via. The conductive via directly electrically couples together the conductive line with the conductive node. Insulator material is longitudinally-along laterally-opposing sides of the wall. An interface of the insulative material of the wall and the insulator material are on each of the laterally-opposing sides of the wall. Other embodiments, including method, are disclosed.

Abstract: Methods, apparatuses, and systems associated with anomaly detection and resolution are described. Examples can include detecting, via a sensor of a robot, an object in a path of the robot while the robot is performing a task in an environment and classifying the object as an anomaly or a non-anomaly and the environment as anomalous or non-anomalous using a machine learning model. Examples can include proceeding with the task responsive to classification of the object as a non-anomaly and the environment as non-anomalous and resolving the anomaly or the anomalous environment and proceeding with the task responsive to classification of the object as an anomaly or the environment as anomalous.

Abstract: A semiconductor package assembly includes a first mounting surface of a package substrate that faces a second mounting surface of a printed circuit board. A first structural element bond pad is mounted to the first mounting surface. A second structural element bond pad is mounted to the second mounting surface, and the first and second structural element bond pads are aligned with each other. A structural element is interconnected with a first solder joint to the first structural element bond pad and interconnected with a second solder joint to the second structural element bond pad. The structural element extends between the first and second structural element bond pads to absorb mechanical shock when a compressive force pushes one of the first and second mounting surfaces toward the other.

Abstract: Control logic in a memory device receives a request to perform a memory access operation on a memory array of the memory device and determines an operating temperature of the memory device. The control logic further modifies a default magnitude of a source voltage signal based on the operating temperature to a form a modified source voltage signal, causes the modified source voltage signal to be applied to the memory array, and performs the memory access operation on the memory array.

Abstract: In a compute express link (CXL) memory controller system, a system and method to identify memory errors which may require soft package repair or hard package repair to rows of DRAM memory. When data is written to a row of DRAM, the data is immediately and automatically read back and scanned for bit errors. If bit errors are identified, steps are taken to determine if the memory location requires no repair, soft repair, or hard repair. The data is corrected and written back to a new memory location which is memory-mapped to the original location, thus effecting the soft- or hard-repair. The present system and method does not repair the entire row of memory, but only repairs the specific die(s) that exhibit memory error in the row.

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple with conductor material of the conductor tier by conductive material of a lowest of the conductive tiers. Insulating material of the insulative tier that is immediately-directly above the lowest conductive tier is directly against a top of the conductive material of the lowest conductive tier. The insulating material comprises at least one of aluminum oxide, hafnium oxide, zirconium oxide, and carbon-doped insulative material. Other embodiments, including method, are disclosed.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming an upper stack directly above a lower stack. The lower stack comprises vertically-alternating lower-first-tiers and lower-second-tiers. The upper stack comprises vertically-alternating upper-first-tiers and upper-second-tiers. Lower channel openings extend through the lower-first-tiers and the lowers-second-tiers. The lower channel openings have sacrificial material therein. An upper of the lower-first-tiers or a lower of the upper-first-tiers comprises non-stoichiometric silicon nitride comprising (a) or (b), where (a): a nitrogen-to-silicon atomic ratio greater than 1.33 and less than 1.5; and (b): a nitrogen-to-silicon atomic ratio greater than or equal to 1.0 and less than 1.33. A higher of the upper-first-tiers that is above said lower upper-first-tier comprises silicon nitride not having either the (a) or the (b).

Abstract: A method performed by a processing device receives a plurality of write operation requests, where each of the write operation requests specifies a respective one of the memory units, identifies one or more operating characteristic values, where each operating characteristic value reflects one or more memory access operations performed on a memory device, and determines whether the operating characteristic values satisfy one or more threshold criteria. Responsive to determining that the operating characteristic values satisfy the one or more threshold criteria, the method performs a plurality of write operations, where each of the write operations writes data to the respective one of the memory units, and performs a multiple-read scan operation subsequent to the plurality of write operations, where the multiple-read scan operation reads data from each of the memory units.

Abstract: An apparatus includes a substrate and a transistor disposed on the substrate. The transistor can include a gate disposed between a source area and a drain area of the transistor. The transistor can also include a plurality of routing lanes above the gate for use by automated routing programs that layout metal connections for the apparatus. A first field plate can be disposed above a LDD region of the source area with the first field plate being on a same level as the plurality of routing lanes. A second field plate can be disposed above a LDD region of the drain area with the second field plate being on the same level as the plurality of routing lanes. The first and second field plates can be electrically connected to the gate using respective first and second path that bypass the plurality of routing lanes.

Abstract: A method of forming a semiconductor device comprising forming a patterned resist over a stack comprising at least one material and removing a portion of the stack exposed through the patterned resist to form a stack opening. A portion of the patterned resist is laterally removed to form a trimmed resist and an additional portion of the stack exposed through the trimmed resist is removed to form steps in sidewalls of the stack. A dielectric material is formed between the sidewalls of the stack to substantially completely fill the stack opening, and the dielectric material is planarized. Additional methods are disclosed, as well as semiconductor devices.

Abstract: A memory device includes a level shifting circuitry. The level shifting circuitry includes an input circuitry configured to receive an input to the level shifting circuitry in a first voltage domain. The level shifting circuitry also includes a cross-junction circuitry electrically coupled to a first node of the input circuitry comprising multiple transistors that are electrically coupled in a cross-junction. The level shifting circuitry also includes an output staging circuitry electrically coupled to a second node of the cross-junction circuitry. The output staging circuitry is configured to transmit an output in a second voltage domain. The output staging circuitry includes a transistor and voltage stress reduction circuitry configured to mitigate degradation of the transistor by reducing voltage stresses across the transistor during transitions in the level shifting circuitry.

Abstract: Systems, apparatuses, and methods related to data reconstruction based on queue depth comparison are described. To avoid accessing the “congested” channel, a read command to access the “congested” channel can be executed by accessing the other relatively “idle” channels and utilize data read from the “idle” channels to reconstruct data corresponding to the read command.

Abstract: Implementations described herein relate to performing a memory built-in self-test and indicating a status of the memory built-in self-test using a data mask inversion (DMI) bit. A memory device may read one or more bits, associated with a memory built-in self-test, that are stored in a mode register of the memory device. The memory device may identify a first DMI bit of the memory device that is associated with indicating a status of the memory built-in self-test and a second DMI bit of the memory device that is not associated with indicating the status of the memory built-in self-test. The memory device may set the first DMI bit to a first value based on the one or more bits indicating that the memory built-in self-test is enabled. The memory device may perform the memory built-in self-test based on setting the first DMI bit to the first value.

Abstract: Methods, systems, and devices for a dynamic parity scheme are described. A memory system may include a memory device with multiple blocks of memory cells, where each block includes a first quantity of pages of memory cells storing data and a second quantity of pages of memory cells storing parity information associated with the data. In some cases, the memory system may increase the quantity of pages in a block of memory cells storing parity information to improve a reliability of the data stored in the block of memory cells. For example, the memory system may increase the quantity of pages storing parity information at the block of memory cells after performing a threshold quantity of access operations at the block of memory cells or in response to detecting more than a threshold quantity of errors in data stored at the block of memory cells.

Abstract: Examples described herein include systems and methods which include a multiple input, multiple output transceiver including a plurality of receive antenna configured to receive a plurality of receive signals, and a wireless receiver coupled to the plurality of antenna and configured to receive and decode the plurality of receive signals. The transceiver includes a memory array and a memory controller. The memory controller includes a data address generator configured to, during the decode of the plurality of receive signals, generate at least one memory address according to an access mode of a memory command associated with a memory access operation. The at least one memory address corresponds to a specific sequence of memory access instructions to access a memory cell of the memory array.